JP4970470B2 - Memsデバイス及びその絶縁層の電気的調整 - Google Patents
Memsデバイス及びその絶縁層の電気的調整 Download PDFInfo
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
- B81C99/004—Testing during manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/00714—Treatment for improving the physical properties not provided for in groups B81C1/0065 - B81C1/00706
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q11/00—Selecting arrangements for multiplex systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0107—Sacrificial metal
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Micromachines (AREA)
Description
22 アレイドライバ
24 行ドライバ回路
26 列ドライバ回路
27 ネットワークインタフェース
28 フレームバッファ
29 ドライバコントローラ
30 ディスプレイアレイ
43 アンテナ
45 スピーカ
46 マイクロホン
47 トランシーバ
48 入力装置
50 電源
52 調整ハードウェア
Claims (26)
- MEMSデバイスを製造する方法であって、
第1の電極層を形成する段階と、
前記第1の電極層の上に誘電体層を形成する段階と、
前記誘電体層の上に犠牲材料の層を蒸着させる段階と、
前記犠牲材料の層に対して電圧を印加する段階とを有し、
前記犠牲材料の層は導電性があると共に、
前記犠牲材料の層は前記誘電体層と電気的に連通している
ことを特徴とする方法。 - 前記犠牲材料の層の上に第2の電極層を形成する段階を更に有する
ことを特徴とする請求項1に記載の方法。 - 前記犠牲材料の層の少なくとも一部分を露出するように前記第2の電極層を形づける段階を更に有し、
前記電圧が、露出された前記少なくと一部分に対して印加される
ことを特徴とする請求項2に記載の方法。 - 前記第2の電極層を形づける段階が、前記第2の電極層に開口部を形成する段階を有する
ことを特徴とする請求項3に記載の方法。 - 接触領域を形成するように前記犠牲材料の層を形づける段階を更に有し、
前記電圧が、前記接触領域に対して印加される
ことを特徴とする請求項3に記載の方法。 - 前記第1の電極層と前記誘電体層との間に、部分的反射層を形成する段階を更に有する
ことを特徴とする請求項2に記載の方法。 - 前記第2の電極層を形成する段階が、前記犠牲材料の層に隣接する反射層を形成する段階を有する
ことを特徴とする請求項2に記載の方法。 - 前記第2の電極層を形成する段階が、前記犠牲材料の層の上に変形可能層を形成する段階を有する
ことを特徴とする請求項7に記載の方法。 - 前記電圧が、前記誘電体層における電荷を安定させるのに十分な一定期間の間印加される
ことを特徴とする請求項1に記載の方法。 - 前記電圧が、少なくとも5分の間印加される
ことを特徴とする請求項1に記載の方法。 - 前記電圧が、少なくとも10分の間印加される
ことを特徴とする請求項1に記載の方法。 - 前記第1の電極層と電気的に連通している少なくとも1つの導電性のリード線を形成する段階を更に有し、
前記電圧が、前記少なくとも1つの導電性のリード線に対して印加される
ことを特徴とする請求項1に記載の方法。 - 前記誘電体層が、酸化ケイ素を含む
ことを特徴とする請求項1に記載の方法。 - 前記誘電体層が、窒化ケイ素を含む
ことを特徴とする請求項1に記載の方法。 - 前記犠牲材料の層が、モリブデンを含む
ことを特徴とする請求項1に記載の方法。 - 部分的に製造されたMEMSデバイスを検査する方法であって、
導電性の犠牲層と第1の電極層との間に誘電体層が配置された前記犠牲層と前記第1の電極層との間に、電圧を印加する段階と、
少なくとも前記導電性の犠牲層、前記第1の電極層、及び前記誘電体層を横断する抵抗を測定する段階とを有する
ことを特徴とする方法。 - もし前記抵抗が所定値を下回っているならば、MEMSデバイスを欠陥品であると特定する段階を更に有する
ことを特徴とする請求項16に記載の方法。 - もし前記抵抗が100[kΩ]より小さいならば、MEMSデバイスが、欠陥品であると特定される
ことを特徴とする請求項17に記載の方法。 - もし前記抵抗が10[kΩ]より小さいならば、MEMSデバイスが、欠陥品であると特定される
ことを特徴とする請求項18に記載の方法。 - 部分的に製造されたMEMSデバイスを調整するためのシステムであって、
前記システムが、
基板と、
前記基板の上に配置された第1の電極層と、
前記第1の電極層の上に配置された誘電体層と、
前記誘電体層の上に配置された導電性の犠牲層と、
前記導電性の犠牲層と電気的に連通している電源と
を備えることを特徴とするシステム。 - 前記導電性の犠牲層の上に配置された第2の電極層を更に備え、
前記第2の導電性の層は、下に存在する前記犠牲層の一部分を露出するように形づけられ、
前記電源が、前記導電性の犠牲層の露出された部分と電気的に連通している
ことを特徴とする請求項20に記載のシステム。 - MEMSデバイスを製造する方法であって、
第1の電極層を提供する段階と、
前記第1の電極層の上に配置された誘電体層を提供する段階と、
前記誘電体層の上に配置された導電性の犠牲層を提供する段階と、
前記導電性の犠牲層の上に配置された第2の電極層を提供する段階と、
一定期間の間、電圧を前記導電性の犠牲層に印加する段階と、
空洞共振器の形を定めるように導電性の犠牲材料をエッチングする段階と
を有することを特徴とする方法。 - 前記第1の電極層と前記誘電体層との間に配置された部分的反射層を提供する段階を更に有し、
前記第2の電極層が、反射層を構成する
ことを特徴とする請求項22に記載の方法。 - 前記導電性の犠牲層が、モリブデンを含む
ことを特徴とする請求項22に記載の方法。 - 前記導電性の犠牲材料をエッチングすることは、2フッ化キセノン(XeF2)によるエッチングを含む
ことを特徴とする請求項22に記載の方法。 - 前記誘電体層が、酸化ケイ素と窒化ケイ素の内の少なくとも1つを含む
ことを特徴とする請求項22に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/360,131 US7547568B2 (en) | 2006-02-22 | 2006-02-22 | Electrical conditioning of MEMS device and insulating layer thereof |
US11/360,131 | 2006-02-22 | ||
PCT/US2007/003267 WO2007100457A2 (en) | 2006-02-22 | 2007-02-07 | Electrical conditioning of mems device and insulating layer thereof |
Publications (2)
Publication Number | Publication Date |
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JP2009527371A JP2009527371A (ja) | 2009-07-30 |
JP4970470B2 true JP4970470B2 (ja) | 2012-07-04 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008556347A Expired - Fee Related JP4970470B2 (ja) | 2006-02-22 | 2007-02-07 | Memsデバイス及びその絶縁層の電気的調整 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7547568B2 (ja) |
JP (1) | JP4970470B2 (ja) |
KR (1) | KR20080106932A (ja) |
CN (1) | CN101389566B (ja) |
TW (1) | TW200744938A (ja) |
WO (1) | WO2007100457A2 (ja) |
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- 2007-02-07 KR KR1020087022861A patent/KR20080106932A/ko not_active Application Discontinuation
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- 2007-02-07 CN CN200780006450XA patent/CN101389566B/zh not_active Expired - Fee Related
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WO2007100457A2 (en) | 2007-09-07 |
US20070196944A1 (en) | 2007-08-23 |
JP2009527371A (ja) | 2009-07-30 |
CN101389566B (zh) | 2012-11-14 |
WO2007100457A3 (en) | 2007-12-27 |
CN101389566A (zh) | 2009-03-18 |
US7547568B2 (en) | 2009-06-16 |
KR20080106932A (ko) | 2008-12-09 |
TW200744938A (en) | 2007-12-16 |
US7932728B2 (en) | 2011-04-26 |
US20090315567A1 (en) | 2009-12-24 |
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