JP4958203B2 - シリコン単結晶引上げ用石英ルツボ - Google Patents
シリコン単結晶引上げ用石英ルツボ Download PDFInfo
- Publication number
- JP4958203B2 JP4958203B2 JP2005096825A JP2005096825A JP4958203B2 JP 4958203 B2 JP4958203 B2 JP 4958203B2 JP 2005096825 A JP2005096825 A JP 2005096825A JP 2005096825 A JP2005096825 A JP 2005096825A JP 4958203 B2 JP4958203 B2 JP 4958203B2
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- JP
- Japan
- Prior art keywords
- quartz crucible
- single crystal
- pulling
- silicon single
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 58
- 239000010453 quartz Substances 0.000 title claims description 52
- 239000013078 crystal Substances 0.000 title claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 33
- 229910052710 silicon Inorganic materials 0.000 title claims description 33
- 239000010703 silicon Substances 0.000 title claims description 33
- 239000010410 layer Substances 0.000 claims description 44
- 239000002344 surface layer Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000006837 decompression Effects 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
1b 直胴部
1c 上部域
2 不透明層
3 透明層
31 内表層
Claims (2)
- 石英ルツボ中の多結晶シリコンを溶融したシリコン融液の液面に種結晶を付け、この種結晶を引上げることでシリコン単結晶を製造するシリコン単結晶引上げ用石英ルツボであって、前記シリコン融液と接する透明層とこの外周にある多数の気泡を含む不透明層を有し、前記液面より上方の透明層及び不透明層の石英ルツボ使用前後の厚さ方向の寸法差から求めた線膨張率が、透明層0.001〜0.005%、不透明層5〜15%であることを特徴とするシリコン単結晶引上げ用石英ルツボ。
- 前記透明層の少なくとも内表面から0.2mmの範囲の内表層には、気泡径100μmを超える気泡は存在せず、気泡径50〜100μmの気泡が10個/mm3以下であることを特徴とする請求項1に記載のシリコン単結晶引上げ用石英ルツボ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005096825A JP4958203B2 (ja) | 2005-03-30 | 2005-03-30 | シリコン単結晶引上げ用石英ルツボ |
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JP2005096825A JP4958203B2 (ja) | 2005-03-30 | 2005-03-30 | シリコン単結晶引上げ用石英ルツボ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006273672A JP2006273672A (ja) | 2006-10-12 |
JP4958203B2 true JP4958203B2 (ja) | 2012-06-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005096825A Active JP4958203B2 (ja) | 2005-03-30 | 2005-03-30 | シリコン単結晶引上げ用石英ルツボ |
Country Status (1)
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JP (1) | JP4958203B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100907184B1 (ko) * | 2007-09-04 | 2009-07-09 | 주식회사 실트론 | 단결정 성장장치용 석영 도가니 및 그 제조방법 |
US8272234B2 (en) * | 2008-12-19 | 2012-09-25 | Heraeus Shin-Etsu America, Inc. | Silica crucible with pure and bubble free inner crucible layer and method of making the same |
CN102325927B (zh) * | 2009-12-11 | 2014-03-12 | 日本超精石英株式会社 | 氧化硅玻璃坩埚 |
CN108059325B (zh) * | 2017-06-22 | 2024-05-10 | 内蒙古欧晶科技股份有限公司 | 复合石英砂制备石英坩埚的方法及石英坩埚 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4548682B2 (ja) * | 1999-04-06 | 2010-09-22 | 株式会社ワコム製作所 | 石英ガラスるつぼの製造方法 |
JP4358555B2 (ja) * | 2003-05-30 | 2009-11-04 | ジャパンスーパークォーツ株式会社 | シリコン単結晶引上用石英ガラスルツボとその引上方法 |
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2005
- 2005-03-30 JP JP2005096825A patent/JP4958203B2/ja active Active
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JP2006273672A (ja) | 2006-10-12 |
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