JP4946321B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 214
- 238000003672 processing method Methods 0.000 title claims description 22
- 239000007788 liquid Substances 0.000 claims description 117
- 238000005507 spraying Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000007723 transport mechanism Effects 0.000 claims description 19
- 239000007921 spray Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 66
- 229910052710 silicon Inorganic materials 0.000 description 66
- 239000010703 silicon Substances 0.000 description 66
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 60
- 239000002245 particle Substances 0.000 description 50
- 239000000126 substance Substances 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000008155 medical solution Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
図1は、本実施形態に係る基板処理装置100の全体斜視図である。
次に、上記の基板処理装置100を用いた基板処理方法について説明する。
3〜5分であり、ヒータ124による加熱温度は約200℃である。また、キャリアガスである窒素ガスの流量は2〜3SLMとされる。
互いに間隔をおいて配列された複数の基板を前記液槽内の液に一括して浸す搬送機構と、
前記基板の裏面に対向するように前記複数の基板の間の隙間に配された蒸気噴霧ノズルとを有し、
前記液槽内の前記液に前記基板を浸す前に、前記複数の基板のそれぞれの裏面に前記蒸気噴霧ノズルから加熱された蒸気が噴霧されることを特徴とする基板処理装置。
前記液槽内の前記液に前記基板を浸す前又は後に前記把持部を収容する容器とを更に備え、
前記蒸気は、前記容器に前記把持部が収容されている状態で前記基板に噴霧されることを特徴とする付記1に記載の基板処理装置。
前記搬送機構は、一つの前記液槽から別の前記液槽に前記複数の基板を一括して搬送することを特徴とする付記1に記載の基板処理装置。
前記蒸気を噴霧した後に、液槽内に溜められた液の中に前記複数の基板を一括して液に浸すステップと、
を有することを特徴とする基板処理方法。
前記再噴霧の後に、前記容器内に不活性ガスを導入して前記基板の表面を乾燥させるステップとを更に有することを特徴とする付記15に記載の基板処理方法。
Claims (8)
- 液槽と、
互いに間隔をおいて配列された複数の基板を前記液槽内の液に一括して浸す搬送機構と、
前記搬送機構に設けられ、前記複数の基板を把持する把持部と、
前記液槽内の前記液に前記基板を浸す前又は後に前記把持部を収容すると共に、下部において開閉可能であり、前記下部に排水口を有する容器と、
前記基板の裏面のみに対向するように前記複数の基板の間の隙間に配された蒸気噴霧ノズルとを有し、
前記液槽内の前記液に前記基板を浸す前に、前記容器に前記把持部が収容されている状態で、前記複数の基板のそれぞれの裏面のみに前記蒸気噴霧ノズルから80℃〜100℃に加熱された蒸気が噴霧されることを特徴とする基板処理装置。 - 前記液槽内の前記液に前記基板を浸した後に、前記把持部を前記容器に収容し、該容器内において前記基板の裏面に前記加熱された蒸気を再び噴霧し、前記容器内に不活性ガスを導入して前記基板の表面を乾燥させることを特徴とする請求項1に記載の基板処理装置。
- 前記液槽内の前記液に前記基板を浸した後に、前記基板の裏面に前記加熱された蒸気を再び噴霧することにより、前記基板に対するリンス処理を行うことを特徴とする請求項1に記載の基板処理装置。
- 前記蒸気噴霧ノズルは、前記蒸気を噴霧するときに、前記半導体基板の裏面上を揺動することを特徴とする請求項1に記載の基板処理装置。
- 複数の基板の裏面に80℃〜100℃に加熱された蒸気を噴霧するステップと、
前記蒸気を噴霧した後に、液槽内に溜められた液の中に前記複数の基板を一括して液に浸すステップと、
前記基板を前記液に浸すステップの後に、下部において開閉可能であり、更に前記下部に排水口を有する容器内において前記複数の基板のそれぞれの裏面のみに前記加熱された蒸気を再噴霧するステップと、
前記再噴霧の後に、前記容器内に不活性ガスを導入して前記基板の表面を乾燥させるステップと、
を有することを特徴とする基板処理方法。 - 前記加熱された蒸気を噴霧するステップは、前記基板を前記容器に収容した状態で行われることを特徴とする請求項5に記載の基板処理方法。
- 前記基板を前記液に浸すステップの後に、前記複数の基板のそれぞれの裏面に前記加熱された蒸気を再噴霧して、前記基板に対するリンス処理を行うステップを更に有することを特徴とする請求項5に記載の基板処理方法。
- 前記加熱された蒸気を噴霧するステップは、前記半導体基板の裏面上において蒸気噴霧ノズルを揺動しながら行うことを特徴とする請求項5に記載の基板処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006268881A JP4946321B2 (ja) | 2006-09-29 | 2006-09-29 | 基板処理装置及び基板処理方法 |
US11/902,394 US8361240B2 (en) | 2006-09-29 | 2007-09-21 | Substrate processing apparatus and substrate processing method |
KR1020070097905A KR100874395B1 (ko) | 2006-09-29 | 2007-09-28 | 기판 처리 장치 및 기판 처리 방법 |
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JP2006268881A JP4946321B2 (ja) | 2006-09-29 | 2006-09-29 | 基板処理装置及び基板処理方法 |
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JP2008091498A JP2008091498A (ja) | 2008-04-17 |
JP4946321B2 true JP4946321B2 (ja) | 2012-06-06 |
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JP2006268881A Expired - Fee Related JP4946321B2 (ja) | 2006-09-29 | 2006-09-29 | 基板処理装置及び基板処理方法 |
Country Status (3)
Country | Link |
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US (1) | US8361240B2 (ja) |
JP (1) | JP4946321B2 (ja) |
KR (1) | KR100874395B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11806763B2 (en) | 2021-03-11 | 2023-11-07 | Kioxia Corporation | Substrate cleaning device and substrate cleaning method |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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ITMI20110646A1 (it) * | 2011-04-15 | 2012-10-16 | St Microelectronics Srl | Apparecchiatura per la lavorazione di wafer semiconduttori, in particolare per realizzare una fase di processo di rimozione di polimeri. |
US8726835B2 (en) * | 2011-06-30 | 2014-05-20 | Jiaxiong Wang | Chemical bath deposition apparatus for fabrication of semiconductor films |
JP2013222911A (ja) * | 2012-04-19 | 2013-10-28 | Shin Etsu Chem Co Ltd | 基板処理装置及び基板処理方法、並びに太陽電池の製造方法 |
TWI576938B (zh) | 2012-08-17 | 2017-04-01 | 斯克林集團公司 | 基板處理裝置及基板處理方法 |
JP6100487B2 (ja) | 2012-08-20 | 2017-03-22 | 株式会社Screenホールディングス | 基板処理装置 |
JP6200273B2 (ja) * | 2013-10-17 | 2017-09-20 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
CN109127587B (zh) * | 2018-10-22 | 2021-03-19 | 安徽深泽电子股份有限公司 | 一种pcb板的清洗工装 |
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JPS5660021A (en) | 1979-10-19 | 1981-05-23 | Fujitsu Ltd | Etching for semiconductor device |
JPH02117133A (ja) * | 1988-10-26 | 1990-05-01 | Mitsubishi Electric Corp | 半導体ウエハの洗浄方法および洗浄装置 |
JP2890432B2 (ja) * | 1989-01-10 | 1999-05-17 | 富士通株式会社 | 有機物の灰化方法 |
JPH03241742A (ja) * | 1990-02-20 | 1991-10-28 | Matsushita Electron Corp | 半導体基板の洗浄装置 |
JP3232585B2 (ja) * | 1991-06-17 | 2001-11-26 | ソニー株式会社 | 半導体洗浄装置 |
JP2616735B2 (ja) | 1995-01-25 | 1997-06-04 | 日本電気株式会社 | ウェハの研磨方法およびその装置 |
JP3183214B2 (ja) * | 1997-05-26 | 2001-07-09 | 日本電気株式会社 | 洗浄方法および洗浄装置 |
JP3328555B2 (ja) * | 1997-08-19 | 2002-09-24 | 株式会社日清製粉グループ本社 | 微粉体の帯電量制御方法および装置ならびに微粉体の散布方法および装置 |
TW466558B (en) * | 1999-09-30 | 2001-12-01 | Purex Co Ltd | Method of removing contamination adhered to surfaces and apparatus used therefor |
JP2001176833A (ja) * | 1999-12-14 | 2001-06-29 | Tokyo Electron Ltd | 基板処理装置 |
JP3795297B2 (ja) * | 2000-03-29 | 2006-07-12 | 大日本スクリーン製造株式会社 | 基板洗浄装置 |
JP2005175053A (ja) | 2003-12-09 | 2005-06-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2006054344A (ja) * | 2004-08-12 | 2006-02-23 | Kyocera Corp | シリコンウェハの乾燥方法 |
-
2006
- 2006-09-29 JP JP2006268881A patent/JP4946321B2/ja not_active Expired - Fee Related
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2007
- 2007-09-21 US US11/902,394 patent/US8361240B2/en not_active Expired - Fee Related
- 2007-09-28 KR KR1020070097905A patent/KR100874395B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11806763B2 (en) | 2021-03-11 | 2023-11-07 | Kioxia Corporation | Substrate cleaning device and substrate cleaning method |
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Publication number | Publication date |
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US8361240B2 (en) | 2013-01-29 |
KR100874395B1 (ko) | 2008-12-17 |
KR20080030517A (ko) | 2008-04-04 |
US20080078425A1 (en) | 2008-04-03 |
JP2008091498A (ja) | 2008-04-17 |
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