JP4933399B2 - 半導体製造方法および半導体製造装置 - Google Patents
半導体製造方法および半導体製造装置 Download PDFInfo
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- JP4933399B2 JP4933399B2 JP2007277836A JP2007277836A JP4933399B2 JP 4933399 B2 JP4933399 B2 JP 4933399B2 JP 2007277836 A JP2007277836 A JP 2007277836A JP 2007277836 A JP2007277836 A JP 2007277836A JP 4933399 B2 JP4933399 B2 JP 4933399B2
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- gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
SiHCl3+H2→Si+3HCl・・・(1)
の反応が右側に進行することにより、Siエピタキシャル膜が形成されるが、
SiとともにHClが生成される。この反応は、複数の反応からなる平衡反応であり、HClがウェーハw上に滞留し、ウェーハw上のHClモル比が高くなると、平衡は左側にシフトすることになる。従って、Siの生成反応の進行が抑えられ、エピタキシャル成長率が低下することが考えられる。
Claims (5)
- 反応室内にウェーハを保持し、
前記ウェーハ上に、Cl系シリコンソースガスを含む第1のプロセスガスと、水素ガスまたは不活性ガスからなる第2のプロセスガスを、交互に整流状態で供給し、
前記ウェーハを回転させ、
前記ウェーハを加熱して前記ウェーハ上に成膜することを特徴とする半導体製造方法。 - 前記第1のプロセスガスまたは前記第2のプロセスガスの供給と同時に、前記ウェーハの外周に、クリーニングガスを供給することを特徴とする請求項1の半導体製造方法。
- 前記第1のプロセスガスまたは前記第2のプロセスガスの供給と同時に、前記ウェーハの外周に、希釈ガスまたは成膜反応抑制ガスを供給することを特徴とする請求項1または請求項2に記載の半導体製造方法。
- ウェーハが導入される反応室と、
前記反応室にCl系シリコンソースガスを含む第1のプロセスガスと、水素ガスまたは不活性ガスからなる第2のプロセスガスを供給するためのガス供給機構と、
前記第1のプロセスガスと、前記第2のプロセスガスが交互に供給されるように制御するためのガス制御機構と、
前記ガス供給機構より供給された前記第1のプロセスガスまたは前記第2のプロセスガスを整流状態で前記ウェーハに供給するための整流板と、
前記反応室より前記ガスを排出するためのガス排出機構と、
前記反応室内の所定位置で前記ウェーハを保持するための保持機構と、
前記ウェーハを加熱するためのヒータを備えることを特徴とする半導体製造装置。 - 前記整流板の下部に前記ウェーハと離間するように配置され、前記ウェーハ上と前記ウェーハの外周上を分離する仕切り板を備えることを特徴とする請求項4に記載の半導体製造装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007277836A JP4933399B2 (ja) | 2007-10-25 | 2007-10-25 | 半導体製造方法および半導体製造装置 |
TW097140655A TWI378498B (en) | 2007-10-25 | 2008-10-23 | Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device |
US12/257,845 US7923355B2 (en) | 2007-10-25 | 2008-10-24 | Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007277836A JP4933399B2 (ja) | 2007-10-25 | 2007-10-25 | 半導体製造方法および半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009105328A JP2009105328A (ja) | 2009-05-14 |
JP4933399B2 true JP4933399B2 (ja) | 2012-05-16 |
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JP2007277836A Expired - Fee Related JP4933399B2 (ja) | 2007-10-25 | 2007-10-25 | 半導体製造方法および半導体製造装置 |
Country Status (3)
Country | Link |
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US (1) | US7923355B2 (ja) |
JP (1) | JP4933399B2 (ja) |
TW (1) | TWI378498B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5462671B2 (ja) * | 2010-03-15 | 2014-04-02 | 株式会社豊田中央研究所 | 気相成長方法 |
JP5496721B2 (ja) * | 2010-03-17 | 2014-05-21 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
JP5820143B2 (ja) * | 2010-06-22 | 2015-11-24 | 株式会社ニューフレアテクノロジー | 半導体製造装置、半導体製造方法及び半導体製造装置のクリーニング方法 |
JP5395102B2 (ja) | 2011-02-28 | 2014-01-22 | 株式会社豊田中央研究所 | 気相成長装置 |
US20120244685A1 (en) * | 2011-03-24 | 2012-09-27 | Nuflare Technology, Inc. | Manufacturing Apparatus and Method for Semiconductor Device |
JP6038618B2 (ja) * | 2011-12-15 | 2016-12-07 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
JP5964107B2 (ja) * | 2012-03-29 | 2016-08-03 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
KR102375981B1 (ko) * | 2016-07-04 | 2022-03-18 | 삼성전자주식회사 | 반도체 장치 제조 방법 및 반도체 장치 제조 설비 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1167675A (ja) | 1997-08-21 | 1999-03-09 | Toshiba Ceramics Co Ltd | 高速回転気相薄膜形成装置及びそれを用いる高速回転気相薄膜形成方法 |
US6232196B1 (en) * | 1998-03-06 | 2001-05-15 | Asm America, Inc. | Method of depositing silicon with high step coverage |
JP2003109914A (ja) * | 2001-10-01 | 2003-04-11 | Fujitsu Ltd | 金属層の形成方法、半導体装置の製造方法 |
US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
JP4651955B2 (ja) * | 2004-03-03 | 2011-03-16 | 東京エレクトロン株式会社 | 成膜方法 |
US7396743B2 (en) * | 2004-06-10 | 2008-07-08 | Singh Kaushal K | Low temperature epitaxial growth of silicon-containing films using UV radiation |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
DE102005045337B4 (de) * | 2005-09-22 | 2008-08-21 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
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2007
- 2007-10-25 JP JP2007277836A patent/JP4933399B2/ja not_active Expired - Fee Related
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2008
- 2008-10-23 TW TW097140655A patent/TWI378498B/zh not_active IP Right Cessation
- 2008-10-24 US US12/257,845 patent/US7923355B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US20090111278A1 (en) | 2009-04-30 |
TWI378498B (en) | 2012-12-01 |
JP2009105328A (ja) | 2009-05-14 |
TW200935501A (en) | 2009-08-16 |
US7923355B2 (en) | 2011-04-12 |
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