JP4917833B2 - 有機elディスプレイ及びその製造方法 - Google Patents
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- 239000010410 layer Substances 0.000 claims description 139
- 239000000758 substrate Substances 0.000 claims description 74
- 239000011241 protective layer Substances 0.000 claims description 44
- 239000002346 layers by function Substances 0.000 claims description 16
- 239000011737 fluorine Substances 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 238000009751 slip forming Methods 0.000 claims 1
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- 238000005192 partition Methods 0.000 description 54
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 53
- 230000002940 repellent Effects 0.000 description 49
- 239000012044 organic layer Substances 0.000 description 27
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- 238000000034 method Methods 0.000 description 17
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- 230000015572 biosynthetic process Effects 0.000 description 9
- 229920005989 resin Polymers 0.000 description 8
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- 239000003566 sealing material Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
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- 230000008021 deposition Effects 0.000 description 4
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- -1 ITO Substances 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
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- 229910052749 magnesium Inorganic materials 0.000 description 2
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- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
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- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- MSDMPJCOOXURQD-UHFFFAOYSA-N C545T Chemical compound C1=CC=C2SC(C3=CC=4C=C5C6=C(C=4OC3=O)C(C)(C)CCN6CCC5(C)C)=NC2=C1 MSDMPJCOOXURQD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
有機ELディスプレイ
本発明の有機ELディスプレイの第1の実施形態について図面を用いて説明する。
次に上述した有機ELディスプレイの製造方法について図2を用いて説明する。
本実施形態における有機ELディスプレイにおいては、第1の実施形態とは異なり、図5に示すように、隣接する有機EL素子16を区分する絶縁部材として層間絶縁膜15を用いている。このように隔壁14を省略した構成であっても、層間絶縁膜15が有機樹脂により形成されている場合、層間絶縁膜15は水分を吸収しやすいため、第1の実施形態と同様に撥水層18を形成することが有効である。ここでは、撥水層18は、下層電極24の表面から層間絶縁膜15の表面にかけて連続的に被着されている。
11:ディスプレイ基板
12:基板
14:隔壁
14a:開口部
15:層間絶縁膜
15a:凹部
16:有機EL素子
18:撥水層
18a:被覆部
18b:介在部
19:保護層
20:マスク
22:穴部
24:下層電極
26:有機層
28:上層電極
30:封止基板
31:シール材
Claims (4)
- 有機ELディスプレイにおいて、
基板と、
下層電極と、上層電極と、前記下層電極と前記上層電極との間に介在され、有機発光層を含んで構成される機能層とを有し、前記基板上に配列される複数の有機EL素子と、
前記隣り合う有機EL素子間に配置される絶縁部材と、
前記下層電極と前記機能層との間の領域から前記絶縁部材の表面にかけて連続的に形成され、フッ素を含んで構成される第1保護層と、を備え、
前記第1保護層が前記基板全体にわたり形成されているとともに、
前記第1保護層が前記基板の端部近傍で厚みが小さくなっていることを特徴とする有機ELディスプレイ。 - 請求項1に記載の有機ELディスプレイにおいて、
前記第1保護層は、前記下層電極と前記機能層との間の領域における厚みが10nm以下に設定されている有機ELディスプレイ。 - 有機ELディスプレイの製造方法において、
基板と、該基板上に部分的に形成される絶縁部材と、該絶縁部材の非形成領域に位置する前記基板上に少なくとも一部が配置される下層電極と、を有するディスプレイ基板を準備することと、
前記絶縁部材の表面から前記絶縁部材の非形成領域上に位置する前記下層電極の表面にかけて連続的に配置されるフッ素を含む第1保護層を形成することと、
有機EL素子を形成するために、前記下層電極上に位置する前記第1保護層上に、有機発光層を含む機能層と、上層電極とを順次積層すること、を備え、
前記第1保護層を前記基板全体にわたり形成するとともに、
前記第1保護層を前記基板の端部近傍で厚みが小さくなるように形成することを特徴とする有機ELディスプレイの製造方法。 - 請求項3に記載の有機ELディスプレイの製造方法において、
前記第1保護層は、前記下層電極と前記機能層との間に介在される領域の厚みが10nm以下に設定されていることを特徴とする有機ELディスプレイの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006145736A JP4917833B2 (ja) | 2005-06-29 | 2006-05-25 | 有機elディスプレイ及びその製造方法 |
US11/476,456 US7741776B2 (en) | 2005-06-29 | 2006-06-27 | Organic EL display device having a protection layer |
KR1020060058534A KR100771464B1 (ko) | 2005-06-29 | 2006-06-28 | 유기 el 디스플레이 및 그 제조 방법 |
TW095123253A TWI318805B (en) | 2005-06-29 | 2006-06-28 | Organic el display and method for producing the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005189695 | 2005-06-29 | ||
JP2005189695 | 2005-06-29 | ||
JP2006145736A JP4917833B2 (ja) | 2005-06-29 | 2006-05-25 | 有機elディスプレイ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007042599A JP2007042599A (ja) | 2007-02-15 |
JP4917833B2 true JP4917833B2 (ja) | 2012-04-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006145736A Active JP4917833B2 (ja) | 2005-06-29 | 2006-05-25 | 有機elディスプレイ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7741776B2 (ja) |
JP (1) | JP4917833B2 (ja) |
KR (1) | KR100771464B1 (ja) |
TW (1) | TWI318805B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009020432A1 (en) * | 2007-08-08 | 2009-02-12 | Agency For Science, Technology And Research | An electro-optic device and a method for manufacturing the same |
JP5508854B2 (ja) * | 2007-09-11 | 2014-06-04 | Agcエスアイテック株式会社 | 無機質球状体の製造方法および乳化装置 |
US20090203283A1 (en) * | 2008-02-07 | 2009-08-13 | Margaret Helen Gentile | Method for sealing an electronic device |
KR102029107B1 (ko) * | 2013-03-05 | 2019-10-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR101504117B1 (ko) * | 2013-11-14 | 2015-03-19 | 코닝정밀소재 주식회사 | 유기발광 디스플레이 장치 |
WO2017094087A1 (ja) * | 2015-11-30 | 2017-06-08 | パイオニア株式会社 | 発光装置 |
JP6799134B2 (ja) * | 2017-02-21 | 2020-12-09 | 株式会社アルバック | 素子構造体の製造方法 |
CN108630728B (zh) * | 2017-03-24 | 2020-07-28 | 京东方科技集团股份有限公司 | 像素界定层、有机电致发光器件及其制备方法和显示装置 |
CN108922915B (zh) * | 2018-08-06 | 2021-03-26 | 京东方科技集团股份有限公司 | 像素界定层、显示基板及制备方法 |
CN110610972B (zh) * | 2019-09-19 | 2022-06-03 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
KR20220063859A (ko) * | 2020-11-10 | 2022-05-18 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조방법 |
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JP2005026103A (ja) | 2003-07-03 | 2005-01-27 | Mitsubishi Electric Corp | 有機電界発光表示装置およびその製造方法 |
JP4561201B2 (ja) * | 2003-09-04 | 2010-10-13 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
JP4734508B2 (ja) | 2004-06-21 | 2011-07-27 | 京セラ株式会社 | Elディスプレイおよびその製造方法 |
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- 2006-06-27 US US11/476,456 patent/US7741776B2/en active Active
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JP2007042599A (ja) | 2007-02-15 |
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US20070001596A1 (en) | 2007-01-04 |
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