JP4905375B2 - ウエハ保持体の支持構造 - Google Patents
ウエハ保持体の支持構造 Download PDFInfo
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- JP4905375B2 JP4905375B2 JP2008018874A JP2008018874A JP4905375B2 JP 4905375 B2 JP4905375 B2 JP 4905375B2 JP 2008018874 A JP2008018874 A JP 2008018874A JP 2008018874 A JP2008018874 A JP 2008018874A JP 4905375 B2 JP4905375 B2 JP 4905375B2
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- wafer holder
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- support member
- cylindrical ceramic
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- 229910052751 metal Inorganic materials 0.000 claims description 103
- 239000002184 metal Substances 0.000 claims description 103
- 239000000919 ceramic Substances 0.000 claims description 76
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 5
- 238000005219 brazing Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 description 13
- 230000007797 corrosion Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
以下の方法により、窒化アルミニウム(AlN)のウエハ保持体を作製した。先ず、AlN粉末に焼結助剤としてY2O3を0.5重量%加え、更に有機溶剤としてバインダーを加え、ボールミルを用いて24時間混合した。得られたスラリーからスプレードライにて顆粒を作製し、その顆粒をプレス法にて成形して、成形体を作製した。得られた成形体を窒素雰囲気中にて800℃で脱脂処理した後、窒素雰囲気中にて1800℃で焼結することにより、AlN焼結体を得た。
上記実施例1と同じ支持構造であるが、固定用部品と筒状セラミック支持部材を3.8×10−6/Kのムライト−アルミナ複合体で形成した。この支持構造について、上記と同様の各実験を行った結果、問題なく成膜することができた。均熱性は600℃±2.0℃と良好であり、800℃までの昇温も問題なく可能であった。また、上記と同様の耐食試験後の表面粗さは、フランジ部がRa=1.1μm及び筒状セラミック支持部材がRa=0.9μmであった。
上記実施例1と同じ支持構造であるが、熱膨張係数が4.8×10−6/KのAlN製のウエハ保持体に対して、熱膨張係数が2.8×10−6/Kの窒化ケイ素(Si3N4)製の固定用部品と筒状セラミック支持部材を用いた。この支持構造について、上記と同様に800℃まで昇温を行ったが、筒状セラミック支持部材とそのフランジ部、ウエハ保持体に破損等は発生しなかった。
上記実施例1と同じ支持構造であるが、AlN製のウエハ保持体に対して、熱膨張係数が6.8×10−6/Kのアルミナ(Al2O3)製の固定用部品と筒状セラミック支持部材を用いた。この支持構造について、上記と同様に800℃まで昇温を行ったが、各部品に破損は生じなかった。
上記実施例1と同じ支持構造であるが、ダブルナット方式を採用せず、1個の金属ナット6で締め付けた。この支持構造について、同様の実験を行った結果、成膜特性等には影響がないことを確認した。また、600℃と常温の間のヒートサイクルを30回加えても、金属ナットの緩みや筒状セラミック支持部材のがたつきは観察されなかった。
上記実施例1と同じAlN製のウエハ保持体と筒状セラミック支持部材を用いたが、固定用部品や金属ボルトを使用せずに、以下に示す従来の方法により筒状セラミック支持部材とウエハ保持体を固定した。即ち、図4に示すように、筒状セラミック支持部材4とウエハ保持体1を、Al2O3−Y2O3−AlN系の接合ペーストを用いて、荷重を加えながら1800℃で直接接合した。
上記実施例1と同じAlN製のウエハ保持体と筒状セラミック支持部材を用いたが、固定用部品を使用せずに、以下に示す従来の方法でウエハ保持体と筒状セラミック支持部材を固定した。即ち、図5に示すように、筒状セラミック支持部材4のフランジ部4aの貫通穴に六角頭付きM6の金属ボルト2を挿通し、ウエハ保持体1に設けた雌ねじに締め付けトルク200cN・mでねじ込むことによって、筒状セラミック支持部材4を固定した。
2 金属ボルト
2a フランジ
3 固定用部品
4 筒状セラミック支持部材
4a フランジ部
5、6 金属ナット
7 キャップねじ
8 第2の金属ボルト
10 支持構造
10a 固定部
Claims (4)
- セラミックス焼結体の内部又は表面に電気回路が形成されたウエハ保持体と、該ウエハ保持体を支持する筒状セラミック支持部材とが、複数の金属ボルトによって結合されている支持構造であって、
前記金属ボルトの一端が前記ウエハ保持体に設けた有底の雌ねじに螺合されると共に、該金属ボルトの一部に回転を防止するフランジが形成され、該フランジを前記ウエハ保持体との間で挟み込んで固定する固定用部品がウエハ保持体に固定されており、
前記金属ボルトの他端は、前記筒状セラミック支持部材の一端に設けたフランジ部の貫通穴に挿入され、且つ金属ナットが螺合されることによって、該筒状セラミック支持部材が前記ウエハ保持体に固定されていることを特徴とするウエハ保持体の支持構造。 - 前記固定用部品は、ガラス接合、ロウ付け、拡散接合、嵌合、又はねじ止めによって前記ウエハ保持体に固定されていることを特徴とする、請求項1に記載のウエハ保持体の支持構造。
- 前記固定用部品は、窒化アルミニウム又はムライト−アルミナ複合体を主成分としていることを特徴とする、請求項1又は2に記載のウエハ保持体の支持構造。
- 前記金属ナットは、ダブルナット方式によって締め付けを行う複数の金属ナットからなることを特徴とする、請求項1〜3の内いずれかに記載のウエハ保持体の支持構造。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008018874A JP4905375B2 (ja) | 2008-01-30 | 2008-01-30 | ウエハ保持体の支持構造 |
KR1020090006529A KR101184142B1 (ko) | 2008-01-30 | 2009-01-28 | 웨이퍼 유지체의 지지 구조 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008018874A JP4905375B2 (ja) | 2008-01-30 | 2008-01-30 | ウエハ保持体の支持構造 |
Publications (2)
Publication Number | Publication Date |
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JP2009182092A JP2009182092A (ja) | 2009-08-13 |
JP4905375B2 true JP4905375B2 (ja) | 2012-03-28 |
Family
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JP2008018874A Active JP4905375B2 (ja) | 2008-01-30 | 2008-01-30 | ウエハ保持体の支持構造 |
Country Status (2)
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JP (1) | JP4905375B2 (ja) |
KR (1) | KR101184142B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105957829A (zh) * | 2016-06-28 | 2016-09-21 | 无锡市玉祁红光电子有限公司 | 一种芯片装片机用无损伤顶针 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103422072B (zh) * | 2012-05-16 | 2015-09-02 | 中微半导体设备(上海)有限公司 | 一种用于真空处理装置的载置台 |
JP6190580B2 (ja) * | 2012-09-13 | 2017-08-30 | エドワーズ株式会社 | 真空ポンプの回転部及び真空ポンプ |
US11069553B2 (en) | 2016-07-07 | 2021-07-20 | Lam Research Corporation | Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity |
US10910195B2 (en) | 2017-01-05 | 2021-02-02 | Lam Research Corporation | Substrate support with improved process uniformity |
US10741425B2 (en) | 2017-02-22 | 2020-08-11 | Lam Research Corporation | Helium plug design to reduce arcing |
US10460978B2 (en) * | 2017-03-08 | 2019-10-29 | Lam Research Corporation | Boltless substrate support assembly |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001237166A (ja) * | 2000-02-23 | 2001-08-31 | Kyocera Corp | ウエハ加熱装置 |
JP2004146646A (ja) * | 2002-10-25 | 2004-05-20 | Tokyo Electron Ltd | 熱処理装置 |
JP4060684B2 (ja) * | 2002-10-29 | 2008-03-12 | 日本発条株式会社 | ステージ |
JP2005235672A (ja) * | 2004-02-23 | 2005-09-02 | Sumitomo Electric Ind Ltd | ヒータユニット及びそれを搭載した装置 |
JP4908021B2 (ja) * | 2005-03-07 | 2012-04-04 | 日本特殊陶業株式会社 | 静電チャック、静電チャック装置、静電チャックの製造方法、真空チャック、真空チャック装置、真空チャックの製造方法、セラミックヒーター、セラミックヒーター装置、及びセラミックヒーターの製造方法 |
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2008
- 2008-01-30 JP JP2008018874A patent/JP4905375B2/ja active Active
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2009
- 2009-01-28 KR KR1020090006529A patent/KR101184142B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105957829A (zh) * | 2016-06-28 | 2016-09-21 | 无锡市玉祁红光电子有限公司 | 一种芯片装片机用无损伤顶针 |
Also Published As
Publication number | Publication date |
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KR101184142B1 (ko) | 2012-09-18 |
JP2009182092A (ja) | 2009-08-13 |
KR20090083864A (ko) | 2009-08-04 |
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