JP5961917B2 - ウェハ保持体 - Google Patents
ウェハ保持体 Download PDFInfo
- Publication number
- JP5961917B2 JP5961917B2 JP2011066215A JP2011066215A JP5961917B2 JP 5961917 B2 JP5961917 B2 JP 5961917B2 JP 2011066215 A JP2011066215 A JP 2011066215A JP 2011066215 A JP2011066215 A JP 2011066215A JP 5961917 B2 JP5961917 B2 JP 5961917B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer holder
- annular member
- electrode
- ceramic substrate
- inner diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000000919 ceramic Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 32
- 238000007789 sealing Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical group [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 239000012299 nitrogen atmosphere Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000005219 brazing Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
2 導電回路
3 電極部材
4 金属層
5 環状部材
6 封止部材
10 先端部
Claims (4)
- セラミックス基板の内部に埋設された導電回路と該導電回路に給電するための電極部材との電気的接続部を、環状部材と封止部材とによって封止する構造を備えたウェハ保持体であって、前記環状部材は前記セラミックス基板の穴内に設けられ、前記環状部材の中心孔を前記電極部材が貫通しており、該環状部材の内径が環状部材の厚み方向に一定ではなく、前記環状部材と前記電極部材並びに前記セラミックス基板との隙間が前記封止部材により封止されており、前記環状部材の最小内径は、該環状部材の厚み方向のウェハ保持体側にはないことにより前記封止部材が前記電極部材と前記環状部材の間に十分回り込むことができるように構成されたことを特徴とするウェハ保持体。
- 前記環状部材のウェハ保持体側の内径は、前記電極部材の外径より0.2mm以上0.5mm以下大きく、前記環状部材の最小内径は、前記電極部材の外径より0.05mm以上0.2mm以下大きいことを特徴とする請求項1に記載のウェハ保持体。
- 前記封止部材は、亜鉛硼珪酸ガラスまたは結晶化ガラスである、請求項1または請求項2に記載のウェハ保持体。
- 請求項1から請求項3のいずれか1項に記載のウェハ保持体を搭載したことを特徴とする半導体製造装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011066215A JP5961917B2 (ja) | 2011-03-24 | 2011-03-24 | ウェハ保持体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011066215A JP5961917B2 (ja) | 2011-03-24 | 2011-03-24 | ウェハ保持体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012204497A JP2012204497A (ja) | 2012-10-22 |
JP5961917B2 true JP5961917B2 (ja) | 2016-08-03 |
Family
ID=47185181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011066215A Active JP5961917B2 (ja) | 2011-03-24 | 2011-03-24 | ウェハ保持体 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5961917B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6497248B2 (ja) | 2015-07-13 | 2019-04-10 | 住友電気工業株式会社 | ウェハ保持体 |
JP7052796B2 (ja) * | 2017-07-28 | 2022-04-12 | 住友電気工業株式会社 | シャワーヘッド及びその製造方法 |
JP6699765B2 (ja) * | 2019-01-29 | 2020-05-27 | 住友電気工業株式会社 | ウェハ保持体 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI246873B (en) * | 2001-07-10 | 2006-01-01 | Tokyo Electron Ltd | Plasma processing device |
JP3870824B2 (ja) * | 2001-09-11 | 2007-01-24 | 住友電気工業株式会社 | 被処理物保持体、半導体製造装置用サセプタおよび処理装置 |
JP4089820B2 (ja) * | 2003-04-02 | 2008-05-28 | 日本発条株式会社 | 静電チャック |
JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
JP5069452B2 (ja) * | 2006-04-27 | 2012-11-07 | アプライド マテリアルズ インコーポレイテッド | 二重温度帯を有する静電チャックをもつ基板支持体 |
JP4909704B2 (ja) * | 2006-10-13 | 2012-04-04 | 日本特殊陶業株式会社 | 静電チャック装置 |
-
2011
- 2011-03-24 JP JP2011066215A patent/JP5961917B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2012204497A (ja) | 2012-10-22 |
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