JP4876375B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4876375B2 JP4876375B2 JP2004198990A JP2004198990A JP4876375B2 JP 4876375 B2 JP4876375 B2 JP 4876375B2 JP 2004198990 A JP2004198990 A JP 2004198990A JP 2004198990 A JP2004198990 A JP 2004198990A JP 4876375 B2 JP4876375 B2 JP 4876375B2
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- silicon nitride
- nitride film
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- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 126
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 94
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 94
- 229910052757 nitrogen Inorganic materials 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 50
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 7
- 238000005121 nitriding Methods 0.000 claims description 6
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 31
- 239000011229 interlayer Substances 0.000 description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 238000009826 distribution Methods 0.000 description 13
- 239000012495 reaction gas Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- FXOCTISBMXDWGP-UHFFFAOYSA-N dichloro(silyl)silane Chemical compound [SiH3][SiH](Cl)Cl FXOCTISBMXDWGP-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- QYRRPQSBTOLXQR-UHFFFAOYSA-N methoxy-[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(O[SiH2]OC)(C)C QYRRPQSBTOLXQR-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- GURMJCMOXLWZHZ-UHFFFAOYSA-N n-ethyl-n-[tris(diethylamino)silyl]ethanamine Chemical compound CCN(CC)[Si](N(CC)CC)(N(CC)CC)N(CC)CC GURMJCMOXLWZHZ-UHFFFAOYSA-N 0.000 description 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
れたM O S トランジスタ( 電界効果トランジスタ) を覆う状態で窒化シリコン膜が設けられた半導体装置において、窒化シリコン膜の窒素濃度が、窒化シリコン膜の上面側及び下面側の界面層に挟持された部分よりも窒化シリコン膜の上面側及び下面側の界面層において高くなっており、かつ、引っ張り応力を有することを特徴としている。
であり、窒化シリコン膜を形成する工程では、窒化シリコン膜の上面側及び下面側の界面層における窒素濃度が窒化シリコン膜の上面側及び下面側の界面層に挟持された部分の窒素濃度よりも高くなるように、窒素含有ガスの供給量を調整した成膜が行われ、前記窒化シリコン膜が引っ張り応力を有することを特徴としている。このような窒化シリコン膜の形成工程は、例えば熱C V D 法、原子層蒸着法、または窒化シリコン膜の成膜処理とプラズマ窒化処理との繰り返しによって行われる。
Claims (6)
- 半導体基板の表面側に形成された電界効果トランジスタを覆う状態で窒化シリコン膜が設けられた半導体装置において、
前記窒化シリコン膜は、当該窒化シリコン膜の上面側及び下面側の界面層における窒素濃度が当該窒化シリコン膜の上面側及び下面側の界面層に挟持された部分の窒素濃度よりも高く、かつ、引っ張り応力を有する
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記窒化シリコン膜の上面側及び下面側の界面層における窒素濃度は、化学量論的組成よりも高い
ことを特徴とする半導体装置。 - 半導体基板の表面側に電界効果トランジスタを形成する工程と、当該電界効果トランジスタを覆う状態で窒化シリコン膜を形成する工程とを備えた半導体装置の製造方法であって、
前記窒化シリコン膜を形成する工程では、当該窒化シリコン膜の上面側及び下面側の界面層における窒素濃度が、当該窒化シリコン膜の上面側及び下面側の界面層に挟持された部分の窒素濃度よりも高くなるように窒素含有ガスの供給量を調整した成膜が行われ、前記窒化シリコン膜が引っ張り応力を有する
ことを特徴とする半導体装置の製造方法。 - 請求項3記載の半導体装置の製造方法において、
前記窒化シリコン膜を形成する工程は熱CVD法によって行われる
ことを特徴とする半導体装置の製造方法。 - 請求項3記載の半導体装置の製造方法において、
前記窒化シリコン膜を形成する工程は原子層蒸着法によって行われる
ことを特徴とする半導体装置の製造方法。 - 請求項3記載の半導体装置の製造方法において、
前記窒化シリコン膜を形成する工程は、シリコン膜の成膜処理と当該シリコン膜のプラズマ窒化処理との繰り返しによって行われる
ことを特徴とする半導体装置の製造方法。
Priority Applications (1)
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JP2004198990A JP4876375B2 (ja) | 2004-07-06 | 2004-07-06 | 半導体装置およびその製造方法 |
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JP2004198990A JP4876375B2 (ja) | 2004-07-06 | 2004-07-06 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006024609A JP2006024609A (ja) | 2006-01-26 |
JP4876375B2 true JP4876375B2 (ja) | 2012-02-15 |
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JP2004198990A Expired - Fee Related JP4876375B2 (ja) | 2004-07-06 | 2004-07-06 | 半導体装置およびその製造方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007142239A1 (ja) | 2006-06-08 | 2007-12-13 | Nec Corporation | 半導体装置 |
KR100807597B1 (ko) | 2006-09-28 | 2008-02-28 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
JP2008218661A (ja) * | 2007-03-02 | 2008-09-18 | Fujitsu Ltd | 電界効果型半導体装置及びその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0627763B1 (en) * | 1993-05-31 | 2004-12-15 | STMicroelectronics S.r.l. | Process for improving the adhesion between dielectric layers at their interface in semiconductor devices manufacture |
JP2000340561A (ja) * | 1999-05-25 | 2000-12-08 | Tokyo Electron Ltd | 成膜方法 |
JP2003086708A (ja) * | 2000-12-08 | 2003-03-20 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2002198368A (ja) * | 2000-12-26 | 2002-07-12 | Nec Corp | 半導体装置の製造方法 |
JP2002252229A (ja) * | 2001-02-16 | 2002-09-06 | Applied Materials Inc | 窒化膜形成方法及び装置 |
US6509282B1 (en) * | 2001-11-26 | 2003-01-21 | Advanced Micro Devices, Inc. | Silicon-starved PECVD method for metal gate electrode dielectric spacer |
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