JP4871882B2 - 光学スペーサーを含むエレクトロルミネセンスデバイスおよびその製造方法 - Google Patents
光学スペーサーを含むエレクトロルミネセンスデバイスおよびその製造方法 Download PDFInfo
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- JP4871882B2 JP4871882B2 JP2007549570A JP2007549570A JP4871882B2 JP 4871882 B2 JP4871882 B2 JP 4871882B2 JP 2007549570 A JP2007549570 A JP 2007549570A JP 2007549570 A JP2007549570 A JP 2007549570A JP 4871882 B2 JP4871882 B2 JP 4871882B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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Description
Claims (9)
- エレクトロルミネセンスデバイスの製造方法であって、
基材上に第1電極と前記基材上から一定の高さにある第2電極とを含むエレクトロルミネセンス素子を形成する工程と、
光学スペーサーを前記エレクトロルミネセンス素子の前記第2電極へと選択的に熱転写し、光学キャビティの少なくとも一部を形成する工程と
を含み、
前記光学スペーサーが色フィルターである方法。 - 前記光学スペーサーを選択的に熱転写する工程が、
ベース層、光熱変換層および1つ以上の転写層を含んでなるドナーシートを提供する工程と、
前記1つ以上の転写層が前記エレクトロルミネセンス素子の前記第2電極に近接するように前記ドナーシートを位置決めする工程と、
前記ドナーシートの部分を選択的に照射し、前記1つ以上の転写層の部分を前記ドナーシートから前記エレクトロルミネセンス素子の前記第2電極へと熱転写する工程と
を含む請求項1に記載の方法。 - 色フィルターを前記エレクトロルミネセンス素子の前記第2電極へと選択的に熱転写する工程をさらに含む請求項1に記載の方法。
- 前記色フィルターを選択的に熱転写する工程が、
ベース層、光熱変換層および1つ以上の転写層を含んでなるドナーシートを提供する工程と、
前記1つ以上の転写層が前記光学スペーサーに近接するように前記ドナーシートを位置決めする工程と、
前記ドナーシートの部分を選択的に照射し、前記1つ以上の転写層の部分を前記ドナーシートから前記光学スペーサーへと熱転写する工程と
を含む請求項3に記載の方法。 - 前記エレクトロルミネセンス素子の前記第2電極上にブラックマトリックスを形成する工程をさらに含んでなる請求項1に記載の方法。
- 前記ブラックマトリックスを形成する工程が、前記ブラックマトリックスを前記エレクトロルミネセンス素子の前記第2電極に選択的に熱転写する工程を含んでなる請求項5に記載の方法。
- 前記光学スペーサーの屈折率が、前記光学スペーサーが転写される前記エレクトロルミネセンス素子の表面の屈折率と実質的に適合する請求項1に記載の方法。
- 複数の光学スペーサーを前記エレクトロルミネセンス素子の前記第2電極へと選択的に熱転写し、複数の光学キャビティの各光学キャビティの少なくとも一部を形成する工程をさらに含み、
前記複数の光学キャビティの少なくとも1つの光学キャビティが赤色光を通過させるように同調され、前記複数の光学キャビティの少なくとも1つの光学キャビティが緑色光を通過させるように同調され、そして前記複数の光学キャビティの少なくとも1つの光学キャビティが青色光を通過させるように同調される、請求項1に記載の方法。 - 複数の光学スペーサーを前記エレクトロルミネセンス素子の前記第2電極へと選択的に熱転写し、複数の光学キャビティの各光学キャビティの少なくとも一部を形成する工程をさらに含み、
前記複数の光学キャビティの少なくとも1つの光学キャビティが赤色光を発光するように同調され、前記複数の光学キャビティの少なくとも1つの光学キャビティが緑色光を発光するように同調され、そして前記複数の光学キャビティの少なくとも1つの光学キャビティが青色光を発光するように同調される、請求項1に記載の方法。
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US11/024,202 US8569948B2 (en) | 2004-12-28 | 2004-12-28 | Electroluminescent devices and methods of making electroluminescent devices including an optical spacer |
PCT/US2005/047181 WO2006071913A2 (en) | 2004-12-28 | 2005-12-27 | Electroluminescent devices including an optical spacer and methods of making same |
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JP (1) | JP4871882B2 (ja) |
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BR (1) | BRPI0519483A2 (ja) |
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JP2008525993A (ja) | 2008-07-17 |
CN101091268A (zh) | 2007-12-19 |
KR101182437B1 (ko) | 2012-09-12 |
TW201308703A (zh) | 2013-02-16 |
US8569948B2 (en) | 2013-10-29 |
US20140021858A1 (en) | 2014-01-23 |
TWI532229B (zh) | 2016-05-01 |
BRPI0519483A2 (pt) | 2009-02-03 |
TWI408839B (zh) | 2013-09-11 |
EP1831939A2 (en) | 2007-09-12 |
TW200635091A (en) | 2006-10-01 |
TWI575790B (zh) | 2017-03-21 |
US9918370B2 (en) | 2018-03-13 |
US20060138945A1 (en) | 2006-06-29 |
WO2006071913A2 (en) | 2006-07-06 |
KR20070106608A (ko) | 2007-11-02 |
TW201310736A (zh) | 2013-03-01 |
WO2006071913A3 (en) | 2006-10-19 |
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