JP5438313B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP5438313B2 JP5438313B2 JP2008326688A JP2008326688A JP5438313B2 JP 5438313 B2 JP5438313 B2 JP 5438313B2 JP 2008326688 A JP2008326688 A JP 2008326688A JP 2008326688 A JP2008326688 A JP 2008326688A JP 5438313 B2 JP5438313 B2 JP 5438313B2
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- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
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- 229910052792 caesium Inorganic materials 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
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- 238000012423 maintenance Methods 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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- WOYDRSOIBHFMGB-UHFFFAOYSA-N n,9-diphenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 WOYDRSOIBHFMGB-UHFFFAOYSA-N 0.000 description 1
- AJNJGJDDJIBTBP-UHFFFAOYSA-N n-(9,10-diphenylanthracen-2-yl)-n,9-diphenylcarbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C(C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 AJNJGJDDJIBTBP-UHFFFAOYSA-N 0.000 description 1
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- 229910052763 palladium Inorganic materials 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
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- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
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- 229920001690 polydopamine Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
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- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
本実施の形態では、被成膜基板に微細なパターンで薄膜を形成することを目的とした成膜用基板及び成膜方法の一例について図1を用いて説明する。
本実施の形態では、本明細書で開示する発明に用いることのできる成膜用基板の他の例を図3を用いて説明する。実施の形態1と同様な機能を有する構成の材料や作製方法は、実施の形態1と同様とすればよい。
本実施の形態では、本明細書で開示する発明を適用して、発光素子および発光装置を作製する方法について説明する。
本実施の形態では、本明細書で開示する発明を用いて作製されたパッシブマトリクス型の発光装置について図4乃至図5を用いて説明する。
本実施の形態では、本明細書で開示する発明を用いて作製されたアクティブマトリクス型の発光装置について図8を用いて説明する。
本明細書で開示する発明を適用して、様々な表示機能を有する発光装置を作製することができる。即ち、それら表示機能を有する発光装置を表示部に組み込んだ様々な電子機器に本明細書で開示する発明を適用できる。
Claims (7)
- 基板と、
前記基板上の、第1の開口部を有する反射層と、
前記基板と、前記反射層との上の、第1の断熱層と、
前記第1の断熱層上の、光吸収層と、
前記光吸収層上の、第2の開口部を有する第2の断熱層と、
前記光吸収層と、前記第2の断熱層との上の、材料層とを有し、
前記反射層と、前記第2の断熱層とが重なる第1の領域を有し、
前記第1の開口部と、前記第2の開口部とが重なる第2の領域を有する成膜用基板を用い、
前記成膜用基板の前記材料層を有する一方の面と、被成膜基板の一方の面とが離れて向き合うように、前記成膜用基板と、前記被成膜基板とを配置し、
前記第2の領域の前記基板と、前記第2の領域の前記第1の断熱層とを透過させて、エネルギー密度が2×103W/cm2以上2×105W/cm2以下の光を0.1ミリ秒以上1ミリ秒未満の時間、前記光吸収層に照射し、
前記光が照射された前記光吸収層上の、前記材料層が有する材料を前記被成膜基板上に成膜することを特徴とする成膜方法。 - 基板と、
前記基板上の、第1の開口部を有する反射層と、
前記基板と、前記反射層との上の、第1の断熱層と、
前記第1の断熱層上の、第2の開口部を有する光吸収層と、
前記第1の断熱層上の、第3の開口部を有する第2の断熱層と、
前記光吸収層と、前記第2の断熱層との上の、材料層とを有し、
前記反射層と、前記第2の開口部と、前記第2の断熱層とが重なる第1の領域を有し、
前記第1の開口部と、前記光吸収層と、前記第3の開口部とが重なる第2の領域を有する成膜用基板を用い、
前記成膜用基板の前記材料層を有する一方の面と、被成膜基板の一方の面とが離れて向き合うように、前記成膜用基板と、前記被成膜基板とを配置し、
前記第2の領域の前記基板と、前記第2の領域の前記第1の断熱層とを透過させて、エネルギー密度が2×103W/cm2以上2×105W/cm2以下の光を0.1ミリ秒以上1ミリ秒未満の時間、前記光吸収層に照射し、
前記光が照射された前記光吸収層上の、前記材料層が有する材料を前記被成膜基板上に成膜することを特徴とする成膜方法。 - 請求項1または2において、
前記成膜用基板と、前記被成膜基板との配置は、前記成膜用基板の一方の面と、前記被成膜基板の一方の面との距離が0μmより大きく10μm以下であることを特徴とする成膜方法。 - 請求項1乃至3のいずれか一項において、
前記光吸収層の膜厚は10nm以上2μm以下であることを特徴とする成膜方法。 - 請求項1乃至4のいずれか一項において、
前記光はフラッシュランプから射出された光を用いることを特徴とする成膜方法。 - 請求項1乃至5のいずれか一項において、
前記光はレーザ光を用いることを特徴とする成膜方法。 - 請求項1乃至6のいずれか一項において、
前記光吸収層に光を照射する工程は減圧下で行うことを特徴とする成膜方法。
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