JP4871127B2 - 半導体デバイスを製造する方法および半導体デバイス - Google Patents
半導体デバイスを製造する方法および半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title description 14
- 239000010410 layer Substances 0.000 claims description 40
- 239000011229 interlayer Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims 1
- 238000012545 processing Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
超小型化に対する絶え間ない要求により、ゲート幅が約0.13ミクロン以下のトランジスタを含むとともに約0.30ミクロン以下の小さな隙間によって分離したゲート構造を含んだフラッシュメモリデバイスが製造されるようになった。
従来の方法によれば、酸化物側壁スペーサがゲートスタックの側面上に形成され、第1層間絶縁膜(ILD0)がゲート構造同士の隙間を埋めるように、ゲート構造上にたい積される。
このような処理中に生ずるUV照射は、しきい電圧(Vt)の増加を伴う望ましくないUVチャージングをフラッシュ・メモリデバイスにもたらすことになる。
UVチャージングに晒され、増加したVtを呈するセルは、過書込みを防止することが非常に難しく、また過消去を防止することが難しい。
初期Vtが増加した場合、消去状態とプログラム状態の間のVtウィンドウの幅が狭くなり、これにより信頼性や処理速度に関する様々な問題が引き起こされる。
本発明の実施形態は、層間絶縁膜としてホウ素リンドープされたケイ酸塩ガラス(BPSG)をたい積するステップと、このBPSG層の上面をプレーナ化するステップと、450〜650℃の高温、および115〜135sccmのシラン流量でのプラズマCVD(plasma enhanced chemical vapor deposition)技術により、シリコンリッチ・シリコン酸化物層(SiRO)をたい積するステップと、をさらに含む。
本発明の実施形態は、基板上のトンネル酸化膜、このトンネル酸化膜上のフローティングゲート電極、このフローティングゲート電極上の酸化物/窒化物/酸化物(ONO)スタックを含む層間絶縁膜、およびこの層間絶縁膜上のコントロールゲート36を含む。
本発明の実施形態は、セルのUVチャージングを著しく抑制した、例えばEEPROMのようなフラッシュメモリデバイスを製造することを含む。
このような望ましくないプログラム電圧の増加は、消去状態とプログラム状態の間のVtウィンドウを減らす。
このようなたい積は、165〜195sccm(例えば180sccm)のN2O流量、1.8〜2.2トル(例えば2.0トル)の圧力、110〜140ワット(例えば125ワット)のRF力で実施することができる。
スペーシング(ウェーハとガスを排出するシャワーヘッドの間の距離)は、約625〜675ミル(例えば650ミル)に維持することができる。このたい積プロセスは、3〜15秒間実施することができ、その結果400〜600Å(例えば500Å)の厚みを有するSiRO膜がたい積される。
典型的なシリコン酸化層が1.45〜1.46の屈折率(R.I.)を呈するのに対して、このようなプラズマCVD技術は、屈折率(R.I.)が1.6よりも高くなるように(例えば1.7から2.0のように、1.7よりも大きいように)シリコン含有量を増加させたSiRO層をたい積するのに効果的である。
本発明によるSiRO膜の使用は、従来の製造技術の使用により得られる電圧分布(Vt distribution)よりもその範囲が狭い電圧分布を提供する。
例えば、トランジスタはトンネル酸化膜33、フローティングゲート構造34、ONOスタック層間絶縁膜35、コントロールゲート36を含んでいてもよい。
金属シリサイドの層37Aがゲート電極スタックの上面に形成される一方、金属シリサイドの層37Bがソース/ドレイン領域31、32の上に形成される。
シリコン酸化物のような絶縁物側壁スペーサ38がゲート電極の側面に形成される。シリコン窒化物のエッチストップ層39がシリコン酸化物側壁スペーサ38上のゲート構造の上にたい積される。
その後、BPSG層のような層間絶縁膜(ILD0)300が例えばプラズマCVD(plasma enhanced chemical deposition)によりたい積される。
それから例えばCMP(chemical mechanical polishing)によりプレーナ化が実行される。
このUVを透過しないSiRO層500はまた、メタライゼーション、たい積、エッチング処理のような後続のライン処理のバックエンドの間、UV照射からセルを遮蔽する。さらに、これらのセルはUV照射から遮蔽される。
本発明は特に、セルのUVチャージングが著しく減少したEEPROMのようなフラッシュメモリデバイスの製造において産業上の利用可能性を有する。
Claims (8)
- ゲート絶縁層(33)を介して基板(30)上に形成されるゲート構造を有するトランジスタを形成するステップと、
前記トランジスタ上に第1層間絶縁膜(300)を形成するステップと、
前記第1層間絶縁膜(300)の上面に、屈折率(R.I.)が1.6よりも大きく、実質的にUV照射を透過しないシリコンリッチ・シリコン酸化物層(500)を400Åから600Åの範囲の厚みになるように形成するステップと、
を含み、
前記ゲート構造は、前記ゲート絶縁層(33)としてのトンネル酸化膜上のフローティングゲート電極(34)、前記フローティングゲート(34)上の酸化物/窒化物/酸化物(ONO)スタックを含む第2層間絶縁膜(35)、および前記第2層間絶縁膜(35)上のコントロールゲート(36)を含んでおり、
前記ゲート構造の側面上にシリコン酸化物側壁スペーサ(38)を形成するステップと、
前記ゲート構造上および前記シリコン酸化物側壁スペーサ(38)上にシリコン窒化物層(39)を形成するステップとをさらに含む、半導体デバイスを製造する方法。 - 前記シリコンリッチ・シリコン酸化物層(500)は、1.7よりも大きい屈折率(R.I.)を有する、請求項1記載の方法。
- 前記第1層間絶縁膜(300)としてホウ素リンドープされたケイ酸塩ガラス(BPSG)の層を堆積し、
前記第1層間絶縁膜(300)の上面をプレーナ化するステップを含み、
450℃から650℃の温度で、プラズマCVDにより、前記シリコンリッチ・シリコン酸化物層(500)を堆積する、請求項1記載の方法。 - 100sccmから150sccmのシラン流量、165sccmから195sccmのN2O流量、110ワットから140ワットのRF力、625ミルから675ミルのスペーシング、および1.8から2.2トルの圧力で、前記シリコンリッチ・シリコン酸化物層(500)を堆積する、請求項1記載の方法。
- ゲート絶縁層(33)を間に挟んで基板上(30)に形成されたゲート構造を有するトランジスタと、
前記トランジスタ上の第1層間絶縁膜(300)の上面上に形成された、屈折率(R.I.)が1.6よりも大きく、実質的にUV照射を透過しない、400Åから600Åの厚みを有するシリコンリッチ・シリコン酸化物層(500)とを含み、
前記ゲート構造は、
前記ゲート絶縁層(33)としてのトンネル酸化膜上のフローティングゲート電極(34)と、
前記フローティングゲート(34)上の酸化物/窒化物/酸化物(ONO)スタックを含む第2層間絶縁膜(35)と、
前記第2層間絶縁膜(35)上のコントロールゲート(36)とを含む、半導体デバイス。 - 前記シリコンリッチ・シリコン酸化物層(500)は、1.7よりも大きい屈折率(R.I.)を有する、請求項5記載の半導体デバイス。
- 前記ゲート構造の側面上のシリコン酸化物側壁スペーサ(38)と、
前記ゲート構造の上面および前記シリコン酸化物側壁スペーサ上のシリコン窒化物層(39)と、を含む、請求項5記載の半導体デバイス。 - 前記第1層間絶縁膜(300)は、ホウ素リンドープされたケイ酸塩ガラス(BPSG)の層を含む、請求項5記載の半導体デバイス。
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Application Number | Priority Date | Filing Date | Title |
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US10/617,451 | 2003-07-11 | ||
US10/617,451 US7060554B2 (en) | 2003-07-11 | 2003-07-11 | PECVD silicon-rich oxide layer for reduced UV charging |
PCT/US2004/019664 WO2005010984A2 (en) | 2003-07-11 | 2004-06-18 | Pecvd silicon-rich oxide layer for reduced uv charging in an eeprom |
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JP2007516598A JP2007516598A (ja) | 2007-06-21 |
JP4871127B2 true JP4871127B2 (ja) | 2012-02-08 |
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EP (1) | EP1644974B1 (ja) |
JP (1) | JP4871127B2 (ja) |
KR (1) | KR20060030896A (ja) |
CN (1) | CN100373592C (ja) |
TW (1) | TWI376729B (ja) |
WO (1) | WO2005010984A2 (ja) |
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US7060554B2 (en) | 2006-06-13 |
EP1644974A2 (en) | 2006-04-12 |
JP2007516598A (ja) | 2007-06-21 |
KR20060030896A (ko) | 2006-04-11 |
CN1823414A (zh) | 2006-08-23 |
CN100373592C (zh) | 2008-03-05 |
EP1644974B1 (en) | 2011-06-15 |
TW200507073A (en) | 2005-02-16 |
TWI376729B (en) | 2012-11-11 |
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US20050006712A1 (en) | 2005-01-13 |
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