JP4850057B2 - 液晶表示装置及びその製造方法 - Google Patents
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 139
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 59
- 229920005591 polysilicon Polymers 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 52
- 229920002120 photoresistant polymer Polymers 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 22
- 238000001312 dry etching Methods 0.000 claims description 20
- 238000004380 ashing Methods 0.000 claims description 16
- 239000010410 layer Substances 0.000 description 175
- 239000010408 film Substances 0.000 description 79
- 239000010409 thin film Substances 0.000 description 30
- 239000007789 gas Substances 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 235000010599 Verbascum thapsus Nutrition 0.000 description 1
- 244000178289 Verbascum thapsus Species 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- CFBGXYDUODCMNS-UHFFFAOYSA-N cyclobutene Chemical compound C1CC=C1 CFBGXYDUODCMNS-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- -1 that is Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
液晶表示装置は、薄膜トランジスタ(TFT)を含むアレイ基板とカラーフィルター基板との間に液晶を注入して、液晶の異方性による光の屈折率の差を利用して映像効果を得る非発光画像表示装置に当たる。
ハンプが発生すると、薄膜トランジスタのオン/オフ時間の遅延が長引いて、スイッチング素子としての特性低下が発生する。
前記半導体層は、ポリシリコンを含み、また、前記半導体層は、前記チャンネル部と前記オーミックコンタクト部間に位置するLDD部をさらに含む。
前記半導体層は、ポリシリコンを含み、また、前記半導体層は、前記チャンネル部と前記オーミックコンタクト部間に位置するLDD部をさらに含む。
前記テーパー状の側面部を形成する段階は、ポリシリコン層を形成する段階と;前記ポリシリコン層上にフォトレジストパターンを形成する段階と;前記ポリシリコン層に対するドライエッチングと前記フォトレジストパターンに対するアッシングを同時に行う段階とを含む。
ここで、前記エッジ部は、少なくとも二つの階段を有したり、側面がテーパー状であったりする。
この時、半導体層、ゲート絶縁膜とゲート電極を除いた他の構成要素は、実施例1と類似であるので、半導体層、ゲート絶縁膜とゲート電極の構成要素の構造を主に説明する。
実施例1ないし3の場合、半導体層の形成方法だけに一部の差があって、それ以外の構成要素に対する製造方法は、類似に行われるため、実施例2を基準にその製造方法を説明する。また、実施例1及び実施例3については、構造が異なる半導体層の形成段階において、差異のある部分を主に説明する。
図12Aに示したように、ポリシリコン層112上に第5厚さt31及び第3幅w31を有するフォトレジストパターン181を形成する。
図12Bと図12Cに示したように、フォトレジストパターン181及びその外部に露出されたポリシリコン層112が形成された基板101を真空のチェンバーに移動させた後、チェンバー内にポリシリコンと反応するガス、すなわち、HBr、Cl2、SF6、Br2ガスまたはこれらガスの2種以上を混合した混合ガスとフォトレジストパターン181と反応するO2を少量注入した後、プラズマ処理を行ってドライエッチングを実施する。
前述したような工程を行って、本発明の実施例による液晶表示装置用アレイ基板を完成する。
205:バッファ層
215:半導体層
215a:チャンネル部
215b:オーミックコンタクト部
215c:LDD部
220:ゲート絶縁膜
235:ゲート電極
240:層間絶縁膜
245a、245b:半導体層コンタクトホール
250:ソース電極
253:ドレイン電極
260:保護層
263:ドレインコンタクトホール
270:画素電極
Claims (6)
- 基板上に、チャンネル部と、チャンネル部の両側のオーミックコンタクト部を有して、エッジ部の側面は、少なくとも二つの階段形状を有する、ポリシリコンからなる半導体層と、
半導体層を覆うゲート絶縁膜と、
ゲート絶縁膜上に位置して、前記チャンネル部に対応するゲート電極と、
前記半導体層と接触するソース電極及びドレイン電極と、
前記ドレイン電極と接触する画素電極とを含み、
前記エッジ部の周辺の前記ゲート絶縁膜の段差部は、前記ゲート絶縁膜の他の部分と実質的に同一な厚さであって、前記エッジ部の周辺の前記ゲート電極の段差部は、前記ゲート電極の他の部分と実質的に同一な厚さであることを特徴とする液晶表示装置。
- 前記半導体層は、前記チャンネル部と前記オーミックコンタクト部との間に位置するLDD部をさらに含むことを特徴とする請求項1に記載の液晶表示装置。
- 基板上に、チャンネル部と、チャンネル部の両側のオーミックコンタクト部を有して、エッジ部の側面は、少なくとも二つの階段形状を有する、ポリシリコンからなる半導体層を形成する段階と、
半導体層を覆うゲート絶縁膜を形成する段階と、
ゲート絶縁膜上に位置して、前記チャンネル部に対応するゲート電極を形成する段階と、
前記半導体層と接触するソース電極及びドレイン電極を形成する段階と、
前記ドレイン電極と接触する画素電極を形成する段階とを含み、
前記エッジ部の周辺の前記ゲート絶縁膜の段差部は、前記ゲート絶縁膜の他の部分と同一な厚さであって、前記エッジ部の周辺の前記ゲート電極の段差部は、前記ゲート電極の他の部分と実質的に同一な厚さであることを特徴とする液晶表示装置の製造方法。
- 前記少なくとも二つの階段形状を形成する段階は、
前記ポリシリコン層上にフォトレジストパターンを形成する段階と、
前記フォトレジストパターンを使用して、前記ポリシリコン層に対して第1ドライエッチングを行う段階と、
前記フォトレジストパターンをアッシングする段階と、
前記アッシングされたフォトレジストパターンを使用して、前記第1ドライエッチングされたポリシリコン層に対して第2ドライエッチングを行う段階とを含み、
前記第1ドライエッチング、アッシング、第2ドライエッチングは、少なくとも一度は繰り返すことを特徴とする請求項3に記載の液晶表示装置の製造方法。
- 前記オーミックコンタクト部を形成する段階は、前記少なくとも二つの階段を形成した後、前記ゲート電極をドーピングマスクとして使用して、n+又はp+に前記半導体層をドーピングする段階を含むことを特徴とする請求項4に記載の液晶表示装置の製造方法。
- 前記半導体層を形成する段階は、前記チャンネル部と前記オーミックコンタクト部との間にLDD部を形成する段階をさらに含むことを特徴とする請求項3に記載の液晶表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020060040062A KR101226974B1 (ko) | 2006-05-03 | 2006-05-03 | 액정표시장치용 어레이 기판 및 그 제조 방법 |
KR10-2006-0040062 | 2006-05-03 |
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JP2007298947A JP2007298947A (ja) | 2007-11-15 |
JP4850057B2 true JP4850057B2 (ja) | 2012-01-11 |
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Country | Link |
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US (2) | US7727824B2 (ja) |
JP (1) | JP4850057B2 (ja) |
KR (1) | KR101226974B1 (ja) |
CN (1) | CN100538483C (ja) |
GB (1) | GB2439586B (ja) |
TW (1) | TWI330890B (ja) |
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JP2008147516A (ja) * | 2006-12-12 | 2008-06-26 | Mitsubishi Electric Corp | 薄膜トランジスタ及びその製造方法 |
KR101294235B1 (ko) * | 2008-02-15 | 2013-08-07 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
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TW200743217A (en) | 2007-11-16 |
GB0621464D0 (en) | 2006-12-06 |
KR20070107493A (ko) | 2007-11-07 |
KR101226974B1 (ko) | 2013-01-28 |
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