JP4827593B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4827593B2 JP4827593B2 JP2006110350A JP2006110350A JP4827593B2 JP 4827593 B2 JP4827593 B2 JP 4827593B2 JP 2006110350 A JP2006110350 A JP 2006110350A JP 2006110350 A JP2006110350 A JP 2006110350A JP 4827593 B2 JP4827593 B2 JP 4827593B2
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Description
半導体素子が光素子であるときには、封止部材は前記半導体素子上に位置する透光性の蓋板およびこの蓋板の周囲の基台の内部空間に充填された樹脂であってよい。
本発明の半導体装置の製造方法は、基板部およびその周縁部分に立ち上がった複数の壁部よりなる基台と前記基板部の周方向に沿って隣り合う壁部間の間隙に露出する複数の導体部とを有したパッケージを形成する工程と、前記基台の内部空間に半導体素子を搭載する工程と、前記半導体素子の電極と前記壁部間の導体部とを金属細線で電気的に接続する工程と、前記導体部と金属細線との接続部を覆うように前記壁部間の間隙を樹脂で埋め込む工程と、前記基台の内部空間を封止部材で封止する工程とを有することを特徴とする。
半導体素子が光素子であるときには、基台の内部空間を封止する工程として、半導体素子の上面部にカバーシートで覆った透光性の蓋板を配置するステップと、壁部間の間隙を埋め込む樹脂を前記基台の内部空間に前記透光性の蓋板の上面位置まで充填するステップと、前記樹脂の硬化後にカバーシートを剥がすステップとを行うようにしてもよい。
図1(a)は本発明の第1実施形態の半導体装置としての固体撮像装置の構成を示す平面図、図1(b)〜(d)はそれぞれ、同固体撮像装置の図1(a)におけるa−a’断面、b−b’断面、c−c’断面を示す断面図である。
図2(a)に示すように、上記したパッケージ2を準備する。パッケージ2のシート基材8,枠体9の材料たるセラミックとしては、この種のパッケージに一般に使用されているアルミナセラミックス(Al203)、ムライトセラミックス(3Al203・2Si02)、ガラスセラミック材などが使用される。各々の導体部4は、Cu、Mo−Mnのメタライズ上にNi−Auめっきを施すか、Wのメタライズ上にNi−Auめっきを施すか、Cr−Cuのメタライズ上にNi−Auめっきを施すなどの方法で形成される。
ペースト状固着剤3の塗布方法としては、ディスペンサー等に装着されたマルチノズルから塗布する方法や、スタンパーに装着された転写部から転写する方法などがある。この作業は、キャビティー10、溝部11、導体部4等にダストや被膜等が付着しないように、清浄化され且つ湿度・温度が管理されたクリーンルーム内で行うことが望ましい。
固体撮像素子1はたとえば、Siウェハー状態で、ステッパー等により受光回路などを形成し、回路の上層に集光のためのマイクロレンズを形成し(オンチップ工程)、ウェハー裏面を所定厚みに研削し(バックグラインド工程)、研削後のSiウェハーをダイシングシートに貼り付け、個片に分割することで形成される。
図3(a)に示すように、パッケージユニット13が複数個、縦横に配列されたブロックシート14を準備する。パッケージユニット13は上述したパッケージ2に相応するもので、隣り合うパッケージユニット13間で、シート基材8,枠体9,溝部11,導体部4が連続している。ブロックシート14は、シート基材8、枠体9ともにセラミック材料を用いて形成してもよいし、セラミック製のシート基材8上に、溝付きの枠体9をエポキシ樹脂の射出成形により形成してもよい。
図3(b)に示すように、ペースト状固着剤3が塗布されたパッケージユニット13内に固体撮像素子1を搭載し、固着させる。
図4(a)(b)に示すように、溝部11内および壁部9aの上面に熱硬化型、またはUV硬化型、若しくは両性能を備えたペースト状の樹脂封止材7を塗布する。
その後に、ブロックシート14をパッケージユニット13ごとにダイシングブレード15で分割して、図4(d)(d´)に示すような、個片のパッケージ2に個体撮像素子1,カバーガラス6が搭載された固体撮像装置を得る。
この固体撮像装置が第1の実施の形態の固体撮像装置と相違するのは、パッケージ2が、シート基材8上の4隅にL形の壁部16が一体化されて形成され、壁部16どうしの間隙に複数の導体部4が互いに間隔をおいて配列されている点である。樹脂封止材7は、導体部4と金属細線5との接続部分を覆うように壁部16間の間隙に埋め込まれるとともに各壁部16上に塗布され、その上にカバーガラス6が貼付されている。
図6(a)に示すように、上記したパッケージ2を準備し、その内底面の素子搭載領域のたとえば複数箇所に、ペースト状固着剤3を塗布する。パッケージ2は、第1実施形態のものと同様に、セラミック材料のみで形成したものであってもよいし、壁部16をエポキシ樹脂で射出成形して形成したものであってもよい。
図6(c)に示すように、パッケージ2の導体部4と個体撮像素子1の電極パッド1aとを金属細線5により接続させる。
図10(a)に示すように、先に図3を用いて説明したのと同様のブロックシート14を準備する。また固体撮像素子1の上にカバーガラス6を配置した一体品を準備する。カバーガラス6の表面はカバーシート19で覆っておく。
その後に、カバーガラス6,固体撮像素子1,カバーシート19の周囲のキャビティー10内および壁部9a間の溝部(11)内に、熱硬化型、またはUV硬化型、若しくは両性能を備えたペースト状の樹脂封止材7を塗布して充填する。樹脂封止材7の量はカバーガラス6の上面位置までとする。
図9に示した固体撮像装置を製造する第2の方法を説明する。
1a 電極パッド
2 中空パッケージ
4 導体部
5 金属細線
6 カバーガラス
7 封止材
8 シート基材
9 枠体
9a 壁部
10 キャビティー
11 溝部
13 パッケージユニット
14 ブロックシート
16 壁部
17,18 段差部
19 カバーシート
Claims (20)
- 基板部およびその周縁部分に立ち上がった複数の壁部よりなる基台と前記基板部の周方向に沿って隣り合う壁部間の間隙に露出する複数の導体部とを有したパッケージと、前記基台の内部空間に搭載された半導体素子と、前記半導体素子の電極と前記壁部間の導体部とを電気的に接続した金属細線と、前記導体部と金属細線との接続部を覆うように前記壁部間の間隙に埋め込まれた樹脂部と、前記半導体素子を搭載した基台の内部空間を封止した封止部材とを備えた半導体装置。
- 壁部は基板部の少なくともコーナー部分に配置されている請求項1記載の半導体装置。
- 壁部は基板部の各辺に沿って枠状に配列されている請求項1記載の半導体装置。
- 壁部間の間隙のそれぞれに1または複数の導体部が配置されている請求項1記載の半導体装置。
- 封止部材は壁部および壁部間の樹脂部の上面に前記樹脂部と同一あるいは異なる樹脂により固着された蓋板である請求項1記載の半導体装置。
- 半導体素子が光素子であるときには透光性の蓋板が使用される請求項5記載の半導体装置。
- 封止部材は半導体素子の上面部をも覆うように基台の内部空間に充填された樹脂である請求項1記載の半導体装置。
- 半導体素子が光素子であるときには、封止部材は前記半導体素子上に位置する透光性の蓋板およびこの蓋板の周囲の基台の内部空間に充填された樹脂である請求項1記載の半導体装置。
- 壁部に蓋板を位置決めする段差部が形成されている請求項5記載の半導体装置。
- 壁部の外面と壁部間の樹脂部の外面とが面一である請求項1記載の半導体装置。
- 基板部およびその周縁部分に立ち上がった複数の壁部よりなる基台と前記基板部の周方向に沿って隣り合う壁部間の間隙に露出する複数の導体部とを有したパッケージを形成する工程と、前記基台の内部空間に半導体素子を搭載する工程と、前記半導体素子の電極と前記壁部間の導体部とを金属細線で電気的に接続する工程と、前記導体部と金属細線との接続部を覆うように前記壁部間の間隙を樹脂で埋め込む工程と、前記基台の内部空間を封止部材で封止する工程とを有する半導体装置の製造方法。
- パッケージを形成する工程では、基台と複数の導体部とを一体的に、且つ複数組配列して、隣り合う基台の基板部および壁部が少なくとも連続するように形成し、基台の内部空間を封止部材で封止する工程の後に、前記隣り合う基台間で連続している壁部を2分する方向にダイシングすることにより、半導体素子を内包した個々の半導体装置に分割する工程を行う請求項11記載の半導体装置の製造方法。
- 基台の内部空間を封止する工程では、前記基台の上端開口を覆う蓋板を封止部材として用いて、前記基台の壁部および壁部間の樹脂部の上面に前記樹脂部と同一あるいは異なる樹脂により固着する請求項11記載の半導体装置の製造方法。
- 半導体素子が光素子であるときに透光性の蓋板を用いる請求項13記載の半導体装置の製造方法。
- 蓋板を固着する樹脂は、壁部間の間隙を樹脂で埋め込む際に同時に壁部の上面に配置する請求項13記載の半導体装置の製造方法。
- 基台の内部空間を封止する工程では、樹脂を封止部材として用いて、前記基台の内部空間に半導体素子の上面部をも覆うように充填する請求項11記載の半導体装置の製造方法。
- 半導体素子が光素子であるときには、基台の内部空間を封止する工程として、半導体素子の上面部にカバーシートで覆った透光性の蓋板を配置するステップと、壁部間の間隙を埋め込む樹脂を前記基台の内部空間に前記透光性の蓋板の上面位置まで充填するステップと、前記樹脂の硬化後にカバーシートを剥がすステップとを行う請求項11記載の半導体装置の製造方法。
- 樹脂を充填するステップを射出成形法により行う請求項17記載の半導体装置の製造方法。
- 樹脂を充填するステップを塗布法により行い、カバーシートを剥がした後に透光性の蓋板の周囲に樹脂をポッティングするステップを行う請求項17記載の半導体装置の製造方法。
- 基台の内部空間に充填する樹脂は、壁部間の間隙を樹脂で埋め込む際に同時に充填する請求項16または請求項17のいずれかに記載の半導体装置の製造方法。
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US11/488,062 US7595540B2 (en) | 2005-07-19 | 2006-07-18 | Semiconductor device and method of manufacturing the same |
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JP4466552B2 (ja) | 2005-12-09 | 2010-05-26 | ソニー株式会社 | 固体撮像装置の製造方法 |
US8493748B2 (en) * | 2007-06-27 | 2013-07-23 | Stats Chippac Ltd. | Packaging system with hollow package and method for the same |
JP2009047949A (ja) * | 2007-08-21 | 2009-03-05 | Alps Electric Co Ltd | 光学素子の製造方法 |
US7964945B2 (en) * | 2007-09-28 | 2011-06-21 | Samsung Electro-Mechanics Co., Ltd. | Glass cap molding package, manufacturing method thereof and camera module |
DE102007058951B4 (de) * | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
JP2010062232A (ja) * | 2008-09-02 | 2010-03-18 | Nec Electronics Corp | 素子の機能部を露出させた半導体装置の製造方法 |
JP2011128140A (ja) * | 2009-11-19 | 2011-06-30 | Dainippon Printing Co Ltd | センサデバイス及びその製造方法 |
TWI395312B (zh) * | 2010-01-20 | 2013-05-01 | 矽品精密工業股份有限公司 | 具微機電元件之封裝結構及其製法 |
JP2011238667A (ja) * | 2010-05-06 | 2011-11-24 | Shinko Electric Ind Co Ltd | 固体撮像装置の製造方法および固体撮像装置 |
CN102447035B (zh) * | 2010-10-06 | 2015-03-25 | 赛恩倍吉科技顾问(深圳)有限公司 | 发光二极管、制造该发光二极管的模具及方法 |
WO2012140936A1 (ja) * | 2011-04-11 | 2012-10-18 | 株式会社村田製作所 | 電子部品及び電子部品の製造方法 |
JP2013211695A (ja) * | 2012-03-30 | 2013-10-10 | Konica Minolta Inc | 撮像装置 |
JP2014197575A (ja) * | 2013-03-29 | 2014-10-16 | セイコーエプソン株式会社 | パッケージ、電子デバイス、電子デバイスの製造方法、電子機器、及び移動体 |
DE102013209248B4 (de) * | 2013-05-17 | 2021-02-11 | Robert Bosch Gmbh | Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil |
CN104022145B (zh) * | 2014-06-23 | 2017-01-25 | 深圳市华星光电技术有限公司 | 基板的封装方法及封装结构 |
US9520307B2 (en) * | 2015-01-29 | 2016-12-13 | Texas Instruments Incorporated | Method and nozzle for hermetically sealed packaged devices |
KR102126418B1 (ko) | 2015-11-03 | 2020-06-24 | 삼성전기주식회사 | 이미지 센서 패키지 |
JP6394649B2 (ja) * | 2016-06-30 | 2018-09-26 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10710875B2 (en) | 2017-11-13 | 2020-07-14 | Texas Instruments Incorporated | Encapsulant barrier |
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JP2002164524A (ja) * | 2000-11-27 | 2002-06-07 | Kyocera Corp | 半導体装置 |
JP2003179172A (ja) * | 2001-10-01 | 2003-06-27 | Kyocera Corp | 光半導体装置 |
JP2005050934A (ja) * | 2003-07-30 | 2005-02-24 | Kyocera Corp | 半導体装置 |
US7005720B2 (en) * | 2004-01-23 | 2006-02-28 | Siliconware Precision Industries Co., Ltd. | Semiconductor package with photosensitive chip and fabrication method thereof |
US7285434B2 (en) * | 2005-03-09 | 2007-10-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and method for manufacturing the same |
JP4882286B2 (ja) * | 2005-04-08 | 2012-02-22 | ソニー株式会社 | 固体撮像装置の製造方法 |
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