JP4827263B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP4827263B2 JP4827263B2 JP2008313453A JP2008313453A JP4827263B2 JP 4827263 B2 JP4827263 B2 JP 4827263B2 JP 2008313453 A JP2008313453 A JP 2008313453A JP 2008313453 A JP2008313453 A JP 2008313453A JP 4827263 B2 JP4827263 B2 JP 4827263B2
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- gas
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- 238000010438 heat treatment Methods 0.000 title claims description 102
- 238000012545 processing Methods 0.000 claims description 106
- 238000001514 detection method Methods 0.000 claims description 31
- 238000002347 injection Methods 0.000 claims description 25
- 239000007924 injection Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 14
- 238000011282 treatment Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 171
- 235000012431 wafers Nutrition 0.000 description 91
- 238000012546 transfer Methods 0.000 description 36
- 238000000576 coating method Methods 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 18
- 238000011161 development Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- 238000004378 air conditioning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
図4は、この発明に係る熱処理装置の第1実施形態の使用状態を示す断面図、図5は、上記熱処理装置の排気部を示す拡大断面図(a)及び(a)のI−I線に沿う拡大断面図、図6は、上記排気部の概略斜視図である。
図8は、この発明に係る熱処理装置の第2実施形態の要部を示す断面図である。
図9は、この発明に係る熱処理装置の第3実施形態の要部を示す断面図である。
図10は、この発明に係る熱処理装置の第4実施形態の要部を示す断面図である。
図11は、この発明に係る熱処理装置の第5実施形態の要部を示す断面図(a)及び(a)のII−II線に沿う拡大断面図(b)である。
上記第3実施形態では、第1実施形態のガス供給手段70を構成するガス供給体71Aを発熱性部材にて形成した場合について説明したが、第5実施形態の多孔質部材からなるガス供給体71Bを発熱性部材にて形成して、温度検出センサ78の検出信号に基づいて加熱手段例えばヒータ装置77の加熱温度を制御して、第3実施形態と同様にガス供給体71B自体を加温するようにしてもよい。
60 熱処理装置
62 蓋体
63 処理室
65 加熱板
66 排気口
67 排気管路
70,70B ガス供給手段
71,71A,71B ガス供給体
71a 胴部
72,72B ガス噴射孔
73 ガス供給管路
73A ガス導入路
74 空気供給源(ガス供給源)
75 コントローラ(制御手段)
76 回動機構
77 ヒータ装置(ガス供給体用加熱手段)
78,78A 温度検出センサ
79 ガス加熱ヒータ
Claims (2)
- 処理室内で被処理基板を熱処理する熱処理装置において、
上記処理室内に配設され、被処理基板を載置して所定温度に加熱する加熱板と、
上記処理室の上部に設けられ、熱処理により処理室内に発生するガスを排気する排気口と、
上記排気口に接続する排気管路と、
上記排気管路に介設され、上記排気ガス中の昇華物等の不純物が上記排気管路内壁に付着するのを防止すべく該排気管路の内壁及び排気ガスの流れ方向に沿ってガスを噴射するガス噴射孔を有するガス供給手段と、を具備し、
上記ガス供給手段は、上記排気管路内の排気ガス方向に沿って挿入され、先端が閉塞する筒状のガス供給体と、該ガス供給体の胴部の外周及び長手方向に沿って複数設けられるガス噴射孔と、ガス供給管路を介して上記ガス供給体と接続するガス供給源とを具備してなり、
上記ガス供給体を発熱性部材にて形成すると共に、ガス供給体に該ガス供給体を加熱する加熱手段を接続してなる、ことを特徴とする熱処理装置。 - 請求項1記載の熱処理装置において、
上記排気管路における上記ガス供給体の下流側に配設され、排気ガスの温度を検出する温度検出センサと、上記温度検出センサの検出信号に基づいて上記加熱手段の加熱温度を制御する制御手段とを更に具備してなる、ことを特徴とする熱処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008313453A JP4827263B2 (ja) | 2008-12-09 | 2008-12-09 | 熱処理装置 |
KR1020090121116A KR101464777B1 (ko) | 2008-12-09 | 2009-12-08 | 열처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008313453A JP4827263B2 (ja) | 2008-12-09 | 2008-12-09 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010140960A JP2010140960A (ja) | 2010-06-24 |
JP4827263B2 true JP4827263B2 (ja) | 2011-11-30 |
Family
ID=42350866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008313453A Expired - Fee Related JP4827263B2 (ja) | 2008-12-09 | 2008-12-09 | 熱処理装置 |
Country Status (2)
Country | Link |
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JP (1) | JP4827263B2 (ja) |
KR (1) | KR101464777B1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101941097B1 (ko) * | 2015-11-24 | 2019-01-23 | 주식회사 원익테라세미콘 | 가스 공급 및 배기 장치 |
US10796935B2 (en) * | 2017-03-17 | 2020-10-06 | Applied Materials, Inc. | Electronic device manufacturing systems, methods, and apparatus for heating substrates and reducing contamination in loadlocks |
JP6990121B2 (ja) * | 2018-03-06 | 2022-01-12 | 株式会社Screenホールディングス | 基板処理装置 |
KR102139615B1 (ko) | 2018-07-10 | 2020-08-12 | 세메스 주식회사 | 기판 처리 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3183269B2 (ja) * | 1998-09-09 | 2001-07-09 | 日本電気株式会社 | 反応生成物除去機能付き真空装置及びその反応生成物除去方法 |
JP3719337B2 (ja) | 1998-09-11 | 2005-11-24 | 日産自動車株式会社 | 遠心式圧縮機 |
JP3108693B1 (ja) * | 1999-09-17 | 2000-11-13 | 核燃料サイクル開発機構 | 排気管閉塞防止方法及び装置 |
JP3756100B2 (ja) * | 2001-10-12 | 2006-03-15 | アプライド マテリアルズ インコーポレイテッド | 成膜装置 |
JP2008060303A (ja) * | 2006-08-31 | 2008-03-13 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP4465342B2 (ja) * | 2006-11-15 | 2010-05-19 | 株式会社日立国際電気 | 半導体製造装置、排気管系および半導体集積回路装置の製造方法 |
KR20080059358A (ko) * | 2008-06-04 | 2008-06-27 | 공배성 | 열풍 및 열원을 이용한 건조장치 |
-
2008
- 2008-12-09 JP JP2008313453A patent/JP4827263B2/ja not_active Expired - Fee Related
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2009
- 2009-12-08 KR KR1020090121116A patent/KR101464777B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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KR20100066399A (ko) | 2010-06-17 |
KR101464777B1 (ko) | 2014-11-24 |
JP2010140960A (ja) | 2010-06-24 |
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