JP4814503B2 - 半導体素子とその製造方法、及び電子部品ユニット - Google Patents
半導体素子とその製造方法、及び電子部品ユニット Download PDFInfo
- Publication number
- JP4814503B2 JP4814503B2 JP2004267159A JP2004267159A JP4814503B2 JP 4814503 B2 JP4814503 B2 JP 4814503B2 JP 2004267159 A JP2004267159 A JP 2004267159A JP 2004267159 A JP2004267159 A JP 2004267159A JP 4814503 B2 JP4814503 B2 JP 4814503B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bonding
- semiconductor
- bonding layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 274
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 239000000758 substrate Substances 0.000 claims description 131
- 239000000463 material Substances 0.000 claims description 110
- 238000000034 method Methods 0.000 claims description 103
- 238000009792 diffusion process Methods 0.000 claims description 70
- 230000005496 eutectics Effects 0.000 claims description 55
- 239000002131 composite material Substances 0.000 claims description 46
- 239000000203 mixture Substances 0.000 claims description 37
- 230000008018 melting Effects 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 14
- 238000009736 wetting Methods 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 12
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 description 55
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 44
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 25
- 230000000694 effects Effects 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 238000005253 cladding Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 9
- 238000005275 alloying Methods 0.000 description 8
- 238000005566 electron beam evaporation Methods 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910007116 SnPb Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Device Packages (AREA)
Description
図19は、上記構造を有する、従来の半導体発光素子61の一例を示す概略的な断面図である。たとえばn型不純物を高濃度に添加したSi基板である導電性支持基板63上に、金属からなる反射層68が積層される。反射層68上には、正孔に対してポテンシャルバリア機能を有するn型クラッド層66、正孔と電子との結合により光を発生する活性層65、及び、電子に対してポテンシャルバリア機能を有するp型クラッド層64を、この順に下からエピタキシャル成長する。p型クラッド層64上には、p側オーミック電極62が形成される。また、導電性支持基板63の反射層68が形成されている面とは反対の面に、n側取出電極67が形成される。
12 Au層
13 Ti層
14 Ni層
15 AuSn層
21 半導体基板
22 半導体発光層
22b バリア層
22w ウエル層
22p p型半導体層
22n n型半導体層
22i i層
23 反射電極層
23a 反射層
23b 電極層
24 TaN層
25、25a、25b、25c、25d、25e、25f Al層
26、26a、26b、26c Ta層
27 Au層
28 表電極
29 接合層
30 支持基板
31 半導体積層構造
33 複合接合層
34 複合バリア層
61 半導体発光素子
62 p側オーミック電極
63 導電性支持基板
64 p型クラッド層
65 活性層
66 n型クラッド層
67 n側取出電極
68 反射層
69 仮基板
70 第1の基板
71 第2の基板
80 基台領域
81 マウント面
82 基台表面積層部分
83 半導体素子チップ
84 電子部品領域
85 パッケージユニット
S、T 領域
Claims (17)
- (a)第1の基板を準備する工程と、
(b)前記第1の基板上方に第1の接合層を形成して、支持基板を得る工程と、
(c)第2の基板を準備する工程と、
(d)前記第2の基板上に、半導体層を形成する工程と、
(e)前記半導体層上方に、第2の接合層を形成して、半導体積層構造を得る工程と、
(f)前記第1、第2の接合層を構成する元素とは異なる元素からなる拡散材料を含む拡散材料層を形成する工程であって、(f1)前記工程(b)において、前記第1の基板上方に拡散材料層を形成し、前記拡散材料層上方に前記第1の接合層を形成する工程、(f2)前記工程(e)において、前記半導体層上方に拡散材料層を形成し、前記拡散材料層上方に前記第2の接合層を形成する工程、のうち少なくとも一方の工程により拡散材料層を形成する工程と、
(g)前記支持基板の前記第1の接合層と、前記半導体積層構造の前記第2の接合層とを接合し、接合体を得る工程であって、(g1)前記第1または第2の接合層は共晶材料を含んで形成されており、前記第1の接合層と前記第2の接合層とを混合させて第1の混合体を形成する工程と、(g2)前記第1の混合体と前記拡散材料層の拡散材料とを混合させて、前記第1の混合体の溶融温度より高い溶融温度を有する第2の混合体を形成する工程と、を含んで接合体を得る工程と
を有する半導体素子の製造方法。 - 前記工程(f)において、形成された前記拡散材料層の少なくとも一つの上に、前記第1及び第2の接合層の材料に対する溶解度が低い材料からなる拡散制御層を形成し、前記拡散制御層上に前記第1または第2の接合層を形成し、
前記拡散制御層は、前記工程(g)において損われる請求項1に記載の半導体素子の製造方法。 - 前記第1または第2の接合層をAuを主体とする共晶材料で形成し、前記拡散制御層をTa、Ti、W、またはMoで形成する請求項2に記載の半導体素子の製造方法。
- 前記工程(b)において、前記第1の基板上方に、密着性向上層、濡れ層のうち少なくとも一方を形成し、その上方に前記第1の接合層を形成し、
前記工程(f1)において、前記密着性向上層または濡れ層の上方に前記拡散材料層を形成する請求項1〜3のいずれか1項に記載の半導体素子の製造方法。 - 前記工程(e)において、前記半導体層上方に、密着性向上層、濡れ層のうち少なくとも一方を形成し、その上方に前記第2の接合層を形成し、
前記工程(f2)において、前記密着性向上層または濡れ層の上方に前記拡散材料層を形成する請求項1〜4のいずれか1項に記載の半導体素子の製造方法。 - 前記工程(d)において、更に、前記半導体層上の少なくとも一部の領域に第1の電極を形成し、前記第1の電極上方にバリア層を形成し、
前記工程(e)において、前記バリア層上方に前記第2の接合層を形成し、
前記工程(f2)において、前記拡散材料層を前記バリア層と前記第2の接合層との間に形成し、
前記バリア層は、前記工程(g)において前記第1または第2の接合層に含まれる共晶材料が、前記第1の電極側に侵入することを防止する請求項1〜5のいずれか1項に記載の半導体素子の製造方法。 - 前記工程(f)において、前記拡散材料層をAl、AgもしくはCu、または、Al、AgもしくはCuを主体とする合金で形成する請求項1〜6のいずれか1項に記載の半導体素子の製造方法。
- 基板と、
前記基板上方に形成された複合接合層と、
前記複合接合層上方に形成された第1の電極と、
前記第1の電極上を含む領域に形成された半導体層と、
前記半導体層上の一部の領域に形成された第2の電極と
を有し、
前記複合接合層は、前記基板、及び第1の接合層を含む支持基板と、前記半導体層、前記第1の電極、及び第2の接合層を含む半導体積層構造とを接合するときに形成され、
前記第1または第2の接合層は共晶成分を含み、
前記支持基板及び前記半導体積層構造の少なくとも一方は、前記第1、第2の接合層を構成する元素とは異なる元素からなる拡散材料を含む拡散材料層を含み、
前記複合接合層は、前記第1または第2の接合層の一方に含まれる共晶成分が他方の接合層と混合して第1の混合体を形成し、更に前記第1の混合体と前記拡散材料層に含まれる拡散材料とが混合し、前記第1の混合体の溶融温度より高い溶融温度を有する第2の混合体を形成することにより形成される半導体素子。 - 前記基板と前記複合接合層との間に、密着性向上層、濡れ層のうち少なくとも一方を含む請求項8に記載の半導体素子。
- 前記複合接合層と前記第1の電極との間に、密着性向上層、濡れ層のうち少なくとも一方を含む請求項8または9に記載の半導体素子。
- 前記複合接合層が、前記第1及び第2の接合層の材料に対する溶解度が低い材料からなり、前記支持基板と前記半導体積層構造との接合の際、前記第1の混合体と前記拡散材料層に含まれる拡散材料との混合を制御する、拡散制御層を含む請求項8〜10のいずれか1項に記載の半導体素子。
- 前記第1または第2の接合層をAuを主体とする共晶材料で形成し、前記拡散制御層をTa、Ti、W、またはMoで形成する請求項11に記載の半導体素子。
- 前記拡散材料層が、Al、AgもしくはCu、または、Al、AgもしくはCuを主体とする合金で形成される請求項8〜12のいずれか1項に記載の半導体素子。
- 基台と、
前記基台上方に形成された複合接合層と、
前記複合接合層上方に形成された電子部品と
を有し、
前記複合接合層は、前記基台、及び第1の接合層を含む基台領域と、前記電子部品及び第2の接合層を含む電子部品領域とを接合するときに形成され、
前記第1または第2の接合層は共晶成分を含み、
前記基台領域及び前記電子部品領域の少なくとも一方は、前記第1、第2の接合層を構成する元素とは異なる元素からなる拡散材料を含む拡散材料層を含み、
前記複合接合層は、前記第1または第2の接合層の一方に含まれる共晶成分が他方の接合層と混合して第1の混合体を形成し、更に前記第1の混合体と前記拡散材料層に含まれる拡散材料とが混合し、前記第1の混合体の溶融温度より高い溶融温度を有する第2の混合体を形成することにより形成される電子部品ユニット。 - 前記基台と前記複合接合層との間に、密着性向上層、濡れ層のうち少なくとも一方を含む請求項14に記載の電子部品ユニット。
- 前記複合接合層と前記電子部品との間に、密着性向上層、濡れ層のうち少なくとも一方を含む請求項14または15に記載の電子部品ユニット。
- 前記複合接合層が、前記第1及び第2の接合層の材料に対する溶解度が低い材料からなり、前記基台領域と前記電子部品領域との接合の際、前記第1の混合体と前記拡散材料層に含まれる拡散材料との混合を制御する拡散制御層を含む請求項14〜16のいずれか1項に記載の電子部品ユニット。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004267159A JP4814503B2 (ja) | 2004-09-14 | 2004-09-14 | 半導体素子とその製造方法、及び電子部品ユニット |
US11/204,527 US7429754B2 (en) | 2004-09-14 | 2005-08-16 | Semiconductor device, its manufacture method and electronic component unit |
DE102005040527A DE102005040527A1 (de) | 2004-09-14 | 2005-08-26 | Halbleitervorrichtung, ihr Herstellungsverfahren und Elektronikkomponenteneinheit |
CNB2005100986295A CN100511735C (zh) | 2004-09-14 | 2005-09-05 | 半导体元件及其制造方法和电子部件单元 |
US12/146,236 US7666692B2 (en) | 2004-09-14 | 2008-06-25 | Semiconductor device, its manufacture method and electronic component unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004267159A JP4814503B2 (ja) | 2004-09-14 | 2004-09-14 | 半導体素子とその製造方法、及び電子部品ユニット |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006086208A JP2006086208A (ja) | 2006-03-30 |
JP4814503B2 true JP4814503B2 (ja) | 2011-11-16 |
Family
ID=36034602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004267159A Expired - Fee Related JP4814503B2 (ja) | 2004-09-14 | 2004-09-14 | 半導体素子とその製造方法、及び電子部品ユニット |
Country Status (4)
Country | Link |
---|---|
US (2) | US7429754B2 (ja) |
JP (1) | JP4814503B2 (ja) |
CN (1) | CN100511735C (ja) |
DE (1) | DE102005040527A1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4592388B2 (ja) * | 2004-11-04 | 2010-12-01 | シャープ株式会社 | Iii−v族化合物半導体発光素子およびその製造方法 |
JP5196288B2 (ja) * | 2005-04-27 | 2013-05-15 | 信越半導体株式会社 | 発光素子の製造方法及び発光素子 |
JP2008098336A (ja) * | 2006-10-11 | 2008-04-24 | Stanley Electric Co Ltd | 半導体発光素子およびその製造方法 |
US20100051970A1 (en) * | 2006-11-17 | 2010-03-04 | Ouderkirk Andrew J | Planarized led with optical extractor |
TWI370555B (en) * | 2006-12-29 | 2012-08-11 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
JP2008244312A (ja) * | 2007-03-28 | 2008-10-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP5426081B2 (ja) | 2007-06-20 | 2014-02-26 | スタンレー電気株式会社 | 基板接合方法及び半導体装置 |
KR101393745B1 (ko) * | 2007-06-21 | 2014-05-12 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP2009054892A (ja) * | 2007-08-28 | 2009-03-12 | Panasonic Electric Works Co Ltd | Ledチップの実装方法 |
DE102007046519A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung |
JP2009141093A (ja) | 2007-12-06 | 2009-06-25 | Toshiba Corp | 発光素子及び発光素子の製造方法 |
JP5376866B2 (ja) * | 2008-08-22 | 2013-12-25 | スタンレー電気株式会社 | 半導体発光装置の製造方法及び半導体発光装置 |
JP5312988B2 (ja) | 2009-03-04 | 2013-10-09 | スタンレー電気株式会社 | 光半導体装置及びその製造方法 |
JP2011029612A (ja) * | 2009-06-24 | 2011-02-10 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子 |
KR20120024489A (ko) * | 2010-09-01 | 2012-03-14 | 삼성엘이디 주식회사 | 반도체 발광다이오드 칩, 발광장치 및 그 제조방법 |
JP2012089828A (ja) * | 2010-09-22 | 2012-05-10 | Toshiba Corp | 半導体装置の製造方法 |
JP5608589B2 (ja) * | 2011-03-10 | 2014-10-15 | スタンレー電気株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
EP2605295A3 (en) * | 2011-12-13 | 2015-11-11 | LG Innotek Co., Ltd. | Ultraviolet light emitting device |
CN103999245A (zh) * | 2011-12-14 | 2014-08-20 | 首尔伟傲世有限公司 | 半导体装置及制造半导体装置的方法 |
CN103840043A (zh) * | 2012-11-26 | 2014-06-04 | 株式会社高松电镀 | Led用晶片及其制造方法 |
CN104241496A (zh) * | 2013-06-18 | 2014-12-24 | 株式会社高松电镀 | Led用的金属基板 |
TWI616002B (zh) * | 2013-12-30 | 2018-02-21 | 新世紀光電股份有限公司 | 發光晶片 |
CN103996784A (zh) * | 2014-05-06 | 2014-08-20 | 上海大学 | 一种降低大功率led热阻的封装结构及其制造方法 |
CN105702810B (zh) * | 2014-11-27 | 2019-08-06 | 晶能光电(江西)有限公司 | 一种发光二极管及其制造方法 |
JP7068577B2 (ja) * | 2018-03-28 | 2022-05-17 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
WO2021059485A1 (ja) * | 2019-09-27 | 2021-04-01 | 三菱電機株式会社 | 光半導体装置およびその製造方法 |
WO2021208006A1 (zh) * | 2020-04-16 | 2021-10-21 | 华为技术有限公司 | 封装结构、电动车辆和电子装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5197654A (en) * | 1991-11-15 | 1993-03-30 | Avishay Katz | Bonding method using solder composed of multiple alternating gold and tin layers |
JPH05251739A (ja) | 1992-03-06 | 1993-09-28 | Toshiba Corp | 半導体発光デバイス |
JP2797958B2 (ja) * | 1993-04-27 | 1998-09-17 | 日本電気株式会社 | 光半導体素子接合構造と接合方法 |
US5917202A (en) | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
JP2001044491A (ja) | 1999-07-13 | 2001-02-16 | Korai Kagi Kofun Yugenkoshi | Led及びその製造方法 |
JP3460019B2 (ja) | 1999-12-27 | 2003-10-27 | 全新光電科技股▲ふん▼有限公司 | 金属コーティング反射永久基板を有する発光ダイオードおよび金属コーティング反射永久基板を有する発光ダイオードの製造方法 |
JP2002217450A (ja) | 2001-01-22 | 2002-08-02 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
JP4333249B2 (ja) * | 2002-12-25 | 2009-09-16 | 株式会社デンソー | Icパッケージ及びその製造方法、回路基板 |
-
2004
- 2004-09-14 JP JP2004267159A patent/JP4814503B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-16 US US11/204,527 patent/US7429754B2/en not_active Expired - Fee Related
- 2005-08-26 DE DE102005040527A patent/DE102005040527A1/de not_active Ceased
- 2005-09-05 CN CNB2005100986295A patent/CN100511735C/zh not_active Expired - Fee Related
-
2008
- 2008-06-25 US US12/146,236 patent/US7666692B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE102005040527A1 (de) | 2006-04-13 |
CN100511735C (zh) | 2009-07-08 |
US7666692B2 (en) | 2010-02-23 |
US20060057817A1 (en) | 2006-03-16 |
US20080268616A1 (en) | 2008-10-30 |
US7429754B2 (en) | 2008-09-30 |
JP2006086208A (ja) | 2006-03-30 |
CN1750284A (zh) | 2006-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4814503B2 (ja) | 半導体素子とその製造方法、及び電子部品ユニット | |
JP4217093B2 (ja) | 半導体発光素子及びその製造方法 | |
US7642543B2 (en) | Semiconductor light emitting device having metal reflective layer | |
JP4050444B2 (ja) | 発光素子及びその製造方法 | |
US20140273318A1 (en) | Method of forming metallic bonding layer and method of manufacturing semiconductor light emitting device therewith | |
TWI440068B (zh) | 基材接合方法以及半導體元件 | |
WO2006082687A1 (ja) | GaN系発光ダイオードおよび発光装置 | |
JP2006245379A (ja) | 半導体発光素子 | |
JP5376866B2 (ja) | 半導体発光装置の製造方法及び半導体発光装置 | |
JP4159865B2 (ja) | 窒化物系化合物半導体発光素子の製造方法 | |
JP6367175B2 (ja) | 半導体発光素子 | |
CN110770894B (zh) | 用于将半导体芯片固定在基板上的方法和电子器件 | |
TW201135970A (en) | Graphite substrate for light emitting diode and light emitting diode including the same | |
JP5329341B2 (ja) | 光半導体装置及びその製造方法 | |
US8916396B2 (en) | Method of manufacturing semiconductor element | |
JP4537877B2 (ja) | セラミックス配線基板とそれを用いた半導体装置 | |
JP2005079298A (ja) | 発光素子及び発光素子の製造方法 | |
TWI414076B (zh) | Manufacturing method of light-emitting element and light-emitting element | |
WO2016158093A1 (ja) | 窒化物半導体発光素子 | |
TW201210060A (en) | Process for producing light emitting diode, process for cutting light emitting diode and light emitting diode | |
JP4699811B2 (ja) | 半導体発光装置の製造方法 | |
JP5520638B2 (ja) | 半導体発光素子およびその製造方法 | |
JP4985930B2 (ja) | 窒化物系化合物半導体発光素子およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070828 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101019 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110620 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110823 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110826 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4814503 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140902 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |