JP4777807B2 - 積層メモリ - Google Patents
積層メモリ Download PDFInfo
- Publication number
- JP4777807B2 JP4777807B2 JP2006090062A JP2006090062A JP4777807B2 JP 4777807 B2 JP4777807 B2 JP 4777807B2 JP 2006090062 A JP2006090062 A JP 2006090062A JP 2006090062 A JP2006090062 A JP 2006090062A JP 4777807 B2 JP4777807 B2 JP 4777807B2
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- JP
- Japan
- Prior art keywords
- core layer
- memory
- memory core
- circuit
- stacked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015654 memory Effects 0.000 title claims description 283
- 239000012792 core layer Substances 0.000 claims description 203
- 239000010410 layer Substances 0.000 claims description 46
- 230000003111 delayed effect Effects 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims description 9
- 230000000750 progressive effect Effects 0.000 claims 1
- 230000000875 corresponding effect Effects 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- 230000004913 activation Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Description
2 制御ロジック層
3 全層同時動作信号
4 コア層制御回路
5 遅延回路
6 アンド回路
7 内部メモリ回路部
8 コマンド/アドレス信号
9 ID
10 螺旋接続端子
Claims (9)
- 複数のメモリコア層を積層した積層メモリにおいて、前記メモリコア層のそれぞれは内部メモリ回路部と、該内部メモリ回路部の動作時間に対応した遅延時間を有する遅延回路とを備え、同時動作信号により活性化されたメモリコア層はその内部に設けられた前記内部メモリ回路部を動作させるとともに、前記遅延回路により遅延された出力信号により次段のメモリコア層を活性化させることを特徴とする積層メモリ。
- 前記メモリコア層のそれぞれはコア制御回路をさらに備え、前記同時動作信号を入力された第1のメモリコア層のコア制御回路からの内部信号は、第1のメモリコア層の内部メモリ回路部を活性化するとともに、第1のメモリコア層の遅延回路に入力されることを特徴とする請求項1に記載の積層メモリ。
- 前記メモリコア層のそれぞれは論理回路をさらに備え、前記第1のメモリコア層の論理回路は、前記全層同時動作信号と前記第1のメモリコア層の遅延回路からの出力信号を入力され、次段の第2のメモリコア層を活性化させる動作信号を出力することを特徴とする請求項2に記載の積層メモリ。
- 前記第2のメモリコア層のコア制御回路は前記第1のメモリコア層からの動作信号を入力され、前記第2のメモリコア層の内部メモリ回路部を動作させるとともに、その出力である内部信号を入力された前記第2のメモリコア層の遅延回路は前記第2の内部メモリ回路部の動作時間に対応した時間に出力信号を出力し、前記第2のメモリコア層の論理回路は、前記第1のメモリコア層からの動作信号と前記第2のメモリコア層の遅延回路からの出力信号を入力され、次段の第3のメモリコア層を活性化させる動作信号を出力することを特徴とする請求項3に記載の積層メモリ。
- 前記第1のメモリコア層は制御ロジック層に近接したメモリコア層であり、前記第2のメモリコア層は前記第1のメモリコア層は近接したメモリコア層であり、逐次近接した残りのメモリコア層を活性化させることを特徴とする請求項2に記載の積層メモリ。
- 前記第1のメモリコア層はコマンド/アドレス信号とメモリコア層識別番号により選択活性化され、前記第1のメモリコア層の遅延回路からの出力信号は次段の第2のメモリコア層を活性化することを特徴とする請求項2に記載の積層メモリ。
- 前記メモリコア層のそれぞれは論理回路をさらに備え、前記第2のメモリコア層の論理回路は前記全層同時動作信号と前記第1のメモリコア層からの出力信号とを入力され、前記第2のメモリコア層のコア層制御回路は前記第2のメモリコア層の論理回路からの出力を入力され、その出力である内部信号は前記第2のメモリコア層の内部メモリ回路を活性化するとともに、前記第2のメモリコア層の遅延回路に入力され、該遅延回路からの出力により第3のメモリコア層を活性化することを特徴とする請求項6に記載の積層メモリ。
- 前記メモリコア層のそれぞれは螺旋接続用の端子を有し、前段のメモリコア層の遅延回路からの出力が次段のメモリコア層の論理回路の一方の入力端子に接続されるように、時計周りに順送りに接続されたことを特徴とする請求項7に記載の積層メモリ。
- 前記メモリコア層のそれぞれには、識別するための番号が前記メモリコア層識別番号として記憶されていることを特徴とする請求項7に記載の積層メモリ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006090062A JP4777807B2 (ja) | 2006-03-29 | 2006-03-29 | 積層メモリ |
US11/690,032 US7483317B2 (en) | 2006-03-29 | 2007-03-22 | Laminated memory having autonomically and sequentially activating operation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006090062A JP4777807B2 (ja) | 2006-03-29 | 2006-03-29 | 積層メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007265548A JP2007265548A (ja) | 2007-10-11 |
JP4777807B2 true JP4777807B2 (ja) | 2011-09-21 |
Family
ID=38557534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006090062A Expired - Fee Related JP4777807B2 (ja) | 2006-03-29 | 2006-03-29 | 積層メモリ |
Country Status (2)
Country | Link |
---|---|
US (1) | US7483317B2 (ja) |
JP (1) | JP4777807B2 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4791924B2 (ja) * | 2006-09-22 | 2011-10-12 | 株式会社東芝 | 半導体記憶装置 |
US8059443B2 (en) * | 2007-10-23 | 2011-11-15 | Hewlett-Packard Development Company, L.P. | Three-dimensional memory module architectures |
US8399973B2 (en) * | 2007-12-20 | 2013-03-19 | Mosaid Technologies Incorporated | Data storage and stackable configurations |
JP5300291B2 (ja) * | 2008-03-13 | 2013-09-25 | スパンション エルエルシー | 半導体システム及びその起動方法 |
KR101529675B1 (ko) * | 2008-12-26 | 2015-06-29 | 삼성전자주식회사 | 멀티 칩 패키지 메모리 장치 |
JP5448697B2 (ja) * | 2009-10-09 | 2014-03-19 | ピーエスフォー ルクスコ エスエイアールエル | 半導体記憶装置及びデータ処理システム |
KR101175248B1 (ko) * | 2010-07-08 | 2012-08-21 | 에스케이하이닉스 주식회사 | 다수의 적층된 칩의 리프레쉬 동작을 제어하는 시스템, 반도체 장치 및 방법 |
KR101190682B1 (ko) | 2010-09-30 | 2012-10-12 | 에스케이하이닉스 주식회사 | 3차원 적층 반도체 집적회로 |
KR101190683B1 (ko) * | 2010-10-29 | 2012-10-12 | 에스케이하이닉스 주식회사 | 반도체 장치, 그의 신호 지연 방법, 적층 반도체 메모리 장치 및 그의 신호 생성 방법 |
KR101815601B1 (ko) * | 2010-12-22 | 2018-01-08 | 에스케이하이닉스 주식회사 | 스택형 메모리 시스템 및 이를 위한 인터리빙 제어 방법 |
JP5337273B2 (ja) * | 2012-04-18 | 2013-11-06 | 力晶科技股▲ふん▼有限公司 | 半導体記憶装置とそのidコード及び上位アドレスの書き込み方法、並びにテスタ装置、テスタ装置のためのテスト方法 |
JP2014089794A (ja) * | 2013-12-24 | 2014-05-15 | Ps4 Luxco S A R L | 半導体記憶装置及びデータ処理システム |
JP2014112457A (ja) * | 2014-01-09 | 2014-06-19 | Ps4 Luxco S A R L | 半導体装置 |
US10020046B1 (en) | 2017-03-03 | 2018-07-10 | Micron Technology, Inc. | Stack refresh control for memory device |
JP7332239B2 (ja) * | 2018-04-19 | 2023-08-23 | ラピスセミコンダクタ株式会社 | 半導体メモリ装置 |
US10685722B1 (en) * | 2019-01-24 | 2020-06-16 | Western Digital Technologies, Inc. | Method and system for improving performance of a storage device using asynchronous independent plane read functionality |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS644997A (en) * | 1987-06-26 | 1989-01-10 | Nippon Denki Office Syst | Memory refresh control system |
JPS644997U (ja) | 1987-06-29 | 1989-01-12 | ||
JPH0793040B2 (ja) * | 1987-11-11 | 1995-10-09 | 日本電気株式会社 | 書込み・消去可能な読出し専用メモリ |
JPH0428087A (ja) * | 1990-05-23 | 1992-01-30 | Seiko Epson Corp | メモリーカード |
JPH0574195A (ja) * | 1991-09-13 | 1993-03-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH1083671A (ja) * | 1996-09-10 | 1998-03-31 | Nkk Corp | 半導体記憶装置 |
JPH10199229A (ja) * | 1997-01-17 | 1998-07-31 | C K D:Kk | 動的記憶素子の並列使用時の安定動作法 |
KR100268434B1 (ko) * | 1997-12-29 | 2000-10-16 | 윤종용 | 반도체 메모리 장치 및 그것의 번-인 테스트방법 |
JPH11283395A (ja) * | 1998-03-30 | 1999-10-15 | Toshiba Microelectronics Corp | 半導体記憶装置 |
JP2000030448A (ja) * | 1998-07-15 | 2000-01-28 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
JP2002032982A (ja) * | 2000-07-17 | 2002-01-31 | Mitsubishi Electric Corp | マルチチップ出力制御回路およびマルチチップ半導体装置 |
US7085189B2 (en) * | 2002-02-28 | 2006-08-01 | Renesas Technology Corp. | Nonvolatile semiconductor storage device |
US6577529B1 (en) * | 2002-09-03 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Multi-bit magnetic memory device |
JP4345399B2 (ja) * | 2003-08-07 | 2009-10-14 | エルピーダメモリ株式会社 | 半導体記憶装置 |
US7301831B2 (en) * | 2004-09-15 | 2007-11-27 | Rambus Inc. | Memory systems with variable delays for write data signals |
KR100868251B1 (ko) * | 2007-03-22 | 2008-11-12 | 주식회사 하이닉스반도체 | 반도체 메모리장치 |
JP5570689B2 (ja) * | 2007-07-23 | 2014-08-13 | ピーエスフォー ルクスコ エスエイアールエル | 積層メモリ |
-
2006
- 2006-03-29 JP JP2006090062A patent/JP4777807B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-22 US US11/690,032 patent/US7483317B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7483317B2 (en) | 2009-01-27 |
JP2007265548A (ja) | 2007-10-11 |
US20070228456A1 (en) | 2007-10-04 |
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