JP4776175B2 - 発光素子収納用パッケージおよびその製造方法および発光装置および照明装置 - Google Patents
発光素子収納用パッケージおよびその製造方法および発光装置および照明装置 Download PDFInfo
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- JP4776175B2 JP4776175B2 JP2004130901A JP2004130901A JP4776175B2 JP 4776175 B2 JP4776175 B2 JP 4776175B2 JP 2004130901 A JP2004130901 A JP 2004130901A JP 2004130901 A JP2004130901 A JP 2004130901A JP 4776175 B2 JP4776175 B2 JP 4776175B2
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- light emitting
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- 238000003860 storage Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title description 20
- 238000007747 plating Methods 0.000 claims description 184
- 239000004020 conductor Substances 0.000 claims description 89
- 239000010931 gold Substances 0.000 claims description 87
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 86
- 229910052737 gold Inorganic materials 0.000 claims description 86
- 230000002093 peripheral effect Effects 0.000 claims description 44
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 42
- 229910052709 silver Inorganic materials 0.000 claims description 42
- 239000004332 silver Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 40
- 238000009713 electroplating Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 88
- 229910052759 nickel Inorganic materials 0.000 description 44
- 239000000919 ceramic Substances 0.000 description 22
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010828 elution Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004080 punching Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Description
このとき、配線導体に電気的に接続された第1のめっき用導体と、第1のめっき用導体とは絶縁されて光反射層に電気的に接続された第2のめっき用導体とをさらに備えていることから、容易に配線導体上に金めっき層を形成するとともに枠体の内周面に金めっき層と銀めっき層を形成することができる。
図2(a)は多数個取り基板の平面図である。図2(b)は、搭載部1a、配線導体4a,4bが電気的に接続された第一のめっき用導体層7が形成された基体1用の多数個取り用の基板1’のめっき用導体層7を示す内部平面図(搭載部1a、配線導体4a,4bは図示せず)である。図2(c)は、枠体2の貫通孔2aの内周面のメタライズ層6aに電気的に接続された第二のめっき導体層8が形成された枠体2用の多数個取り用の基板2’の第二のめっき導体層8を示す内部平面図(メタライズ層6aは図示せず)である。図2(d)は、多数個取り用の基板に光反射層6を被着形成した後の平面図である。また、図3は、多数個取り用の基板を用いて作製された発光素子収納用パッケージの断面図である。
1a:搭載部
2:枠体
3:発光素子
4a,4b:配線導体
6:光反射層
6c:枠体の内周面に形成された金めっき層
6d:銀めっき層
Claims (5)
- 上面に発光素子の搭載部を有する平板状の基体と、該基体の上面に前記搭載部を取り囲むように接合された、内周面に金めっき層と銀めっき層とが順次被着されてなる光反射層を有する枠体と、前記基体の上面から側面または下面に導出された、露出した表面に金めっき層が形成された配線導体と、前記配線導体に電気的に接続された、前記配線導体の表面に前記金めっき層を形成するための第一のめっき用導体と、該第一のめっき用導体とは絶縁されて前記光反射層に電気的に接続された、前記枠体の内周面に前記金めっき層および前記銀めっき層を形成するための第二のめっき用導体とを具備し、
前記基体が第一の基板および該第一の基板の上面に配設された第二の基板からなり、
前記第一のめっき用導体が前記第一の基板の上面に位置するとともに前記第二のめっき用導体が前記第二の基板の上面に位置して、前記第一のめっき用導体および前記第二のめっき用導体が前記第二の基板を介して電気的に絶縁されていることを特徴とする発光素子収納用パッケージ。 - 前記枠体の内周面に形成された金めっき層は、その厚みが0.2μm以上であることを特徴とする請求項1記載の発光素子収納用パッケージ。
- 請求項1または請求項2記載の発光素子収納用パッケージの製造方法であって、前記第一のめっき用導体を介して、電解めっき法により、前記配線導体の露出した表面に金めっき層を被着する工程と、前記第二のめっき用導体を介して、電解めっき法により、前記枠体の内周面に金めっき層を被着する工程と、前記第二のめっき用導体を介して、電解めっき法により、前記枠体の内周面に形成された金めっき層上に前記銀めっき層を被着させる工程とを具備していることを特徴とする発光素子収納用パッケージの製造方法。
- 請求項1または請求項2記載の発光素子収納用パッケージと、前記搭載部に搭載されるとともに前記配線導体に電気的に接続された発光素子と、該発光素子を覆う透光性部材とを具備していることを特徴とする発光装置。
- 請求項4記載の発光装置を所定の配置となるように設置したことを特徴とする照明装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004130901A JP4776175B2 (ja) | 2004-04-27 | 2004-04-27 | 発光素子収納用パッケージおよびその製造方法および発光装置および照明装置 |
PCT/JP2005/006727 WO2005106973A1 (ja) | 2004-04-27 | 2005-03-30 | 発光素子用配線基板 |
US11/568,258 US20080043444A1 (en) | 2004-04-27 | 2005-03-30 | Wiring Board for Light-Emitting Element |
TW094110792A TW200541415A (en) | 2004-04-27 | 2005-04-06 | Wiring board for light emitting element |
US13/071,431 US8314346B2 (en) | 2004-04-27 | 2011-03-24 | Wiring board for light-emitting element |
Applications Claiming Priority (1)
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JP2004130901A JP4776175B2 (ja) | 2004-04-27 | 2004-04-27 | 発光素子収納用パッケージおよびその製造方法および発光装置および照明装置 |
Publications (2)
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JP2005317596A JP2005317596A (ja) | 2005-11-10 |
JP4776175B2 true JP4776175B2 (ja) | 2011-09-21 |
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JP2004130901A Expired - Fee Related JP4776175B2 (ja) | 2004-04-27 | 2004-04-27 | 発光素子収納用パッケージおよびその製造方法および発光装置および照明装置 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101154801B1 (ko) | 2004-12-03 | 2012-07-03 | 엔지케이 스파크 플러그 캄파니 리미티드 | 세라믹 기판 및 발광 소자 수납용 세라믹 패키지 |
JP4771135B2 (ja) * | 2006-01-12 | 2011-09-14 | 日立化成工業株式会社 | プリント配線板、それを使用したled装置及びプリント配線板の製造方法 |
JP2007242738A (ja) * | 2006-03-06 | 2007-09-20 | Sumitomo Metal Electronics Devices Inc | 発光素子収納用パッケージ |
JP3891308B1 (ja) * | 2006-06-15 | 2007-03-14 | 共立エレックス株式会社 | 発光ダイオード用パッケージの製造方法 |
JP2008016593A (ja) * | 2006-07-05 | 2008-01-24 | Ngk Spark Plug Co Ltd | 発光素子搭載用配線基板 |
US7808013B2 (en) * | 2006-10-31 | 2010-10-05 | Cree, Inc. | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
JP5886584B2 (ja) | 2010-11-05 | 2016-03-16 | ローム株式会社 | 半導体発光装置 |
JP2016086191A (ja) * | 2010-11-05 | 2016-05-19 | ローム株式会社 | 半導体発光装置 |
EP3546544B1 (en) * | 2014-10-08 | 2024-05-01 | Seoul Semiconductor Co., Ltd. | Light emitting device |
CN107660065A (zh) * | 2017-09-30 | 2018-02-02 | 广东欧珀移动通信有限公司 | 电路板组件及移动终端 |
WO2019146737A1 (ja) | 2018-01-26 | 2019-08-01 | 丸文株式会社 | 深紫外led及びその製造方法 |
WO2020040304A1 (ja) * | 2018-08-24 | 2020-02-27 | 丸文株式会社 | 深紫外led装置及びその製造方法 |
CN113594334B (zh) * | 2021-07-15 | 2023-10-27 | 福建天电光电有限公司 | 新型半导体支架 |
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JP3353960B2 (ja) * | 1993-04-23 | 2002-12-09 | イビデン株式会社 | プリント配線板のボンディングパッド及び導体パターンの無電解金メッキ方法 |
JPH08272319A (ja) * | 1995-03-30 | 1996-10-18 | Hamamatsu Photonics Kk | 発光装置 |
JP4737842B2 (ja) * | 2001-01-30 | 2011-08-03 | 京セラ株式会社 | 発光素子収納用パッケージの製造方法 |
JP3736679B2 (ja) * | 2001-07-18 | 2006-01-18 | 日立エーアイシー株式会社 | プリント配線板 |
JP4114364B2 (ja) * | 2001-11-08 | 2008-07-09 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP2003347600A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | Led実装基板 |
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