JP4776175B2 - Light emitting element storage package, method for manufacturing the same, light emitting device, and lighting device - Google Patents

Light emitting element storage package, method for manufacturing the same, light emitting device, and lighting device Download PDF

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JP4776175B2
JP4776175B2 JP2004130901A JP2004130901A JP4776175B2 JP 4776175 B2 JP4776175 B2 JP 4776175B2 JP 2004130901 A JP2004130901 A JP 2004130901A JP 2004130901 A JP2004130901 A JP 2004130901A JP 4776175 B2 JP4776175 B2 JP 4776175B2
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light emitting
plating layer
emitting element
conductor
layer
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JP2005317596A (en
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拓治 岡村
晃一 本村
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Kyocera Corp
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Kyocera Corp
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Priority to PCT/JP2005/006727 priority patent/WO2005106973A1/en
Priority to US11/568,258 priority patent/US20080043444A1/en
Priority to TW094110792A priority patent/TW200541415A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Description

本発明は、発光ダイオード等の発光素子を用いた表示装置等に用いられる、発光素子を収納するための発光素子収納用パッケージおよびその製造方法および発光装置および照明装置に関する。   The present invention relates to a light-emitting element housing package for housing a light-emitting element, a method for manufacturing the same, a light-emitting device, and a lighting device, which are used in display devices using light-emitting elements such as light-emitting diodes.

従来、発光ダイオード等の発光素子を収容するための発光素子収納用パッケージ（以下、パッケージともいう）として、セラミックス製のパッケージが用いられている。従来のセラミック製のパッケージは、図５に断面図で示すように、上面の中央部に発光素子１３を搭載するための導体層から成る搭載部１１ａを有し、搭載部１１ａおよびその周辺から下面に導出された一対の配線導体１４を有する直方体状や四角形平板状のセラミックス製の基体１１と、その上面に積層され、中央部に発光素子１３を収容するための貫通穴１２ａを有する四角枠状のセラミックス製の枠体１２とから主に構成されている（例えば、下記の特許文献１参照）。   2. Description of the Related Art Conventionally, a ceramic package has been used as a light emitting element housing package (hereinafter also referred to as a package) for housing a light emitting element such as a light emitting diode. As shown in a sectional view in FIG. 5, the conventional ceramic package has a mounting portion 11a made of a conductor layer for mounting the light emitting element 13 at the center of the upper surface, and the mounting portion 11a and its periphery from the lower surface. A rectangular frame shape having a rectangular parallelepiped or quadrangular flat plate-like ceramic base body 11 having a pair of wiring conductors 14 led to the top surface and a through hole 12a for accommodating the light emitting element 13 at the center. And a ceramic frame body 12 (see, for example, Patent Document 1 below).

そして、基体１１の上面の一方の配線導体１４が接続された導体から成る搭載部１１ａ上に発光素子１３を導電性接合材を介して固着するとともに発光素子１３の電極と他方の配線導体１４とをボンディングワイヤ１５を介して電気的に接続し、しかる後、枠体１２の貫通穴１２ａ内に透明樹脂（図示せず）を充填して発光素子１３を封止することによって、発光装置が作製される。これにより、発光素子１３の発する光をパッケージの外部（図５では上方）に放射することができる。   Then, the light emitting element 13 is fixed to the mounting portion 11a made of a conductor to which the one wiring conductor 14 on the upper surface of the base body 11 is connected through a conductive bonding material, and the electrode of the light emitting element 13 and the other wiring conductor 14 are connected. Are electrically connected via bonding wires 15, and then a transparent resin (not shown) is filled in the through holes 12 a of the frame body 12 to seal the light emitting element 13, thereby producing a light emitting device. Is done. Thereby, the light which the light emitting element 13 emits can be radiated | emitted to the exterior (in FIG. 5, upper direction) of a package.

また、枠体１２の貫通穴１２ａの内周面で発光素子１３の光を反射させてパッケージの上方に光を放射させるために、枠体１２の貫通穴１２ａの内周面にニッケル（Ｎｉ）めっき層や金（Ａｕ）めっき層等のめっき金属層を表面に有するメタライズ層からなる光反射層１６を被着させていることもある。   Further, in order to reflect the light of the light emitting element 13 at the inner peripheral surface of the through hole 12a of the frame body 12 and radiate the light above the package, nickel (Ni) is formed on the inner peripheral surface of the through hole 12a of the frame body 12. A light reflecting layer 16 made of a metallized layer having a plating metal layer such as a plating layer or a gold (Au) plating layer on its surface may be applied.

また、上記のパッケージは、セラミックグリーンシート積層法により以下のように製作される。まず、基体１１となるセラミックグリーンシートと枠体１２となるセラミックグリーンシートとを準備し、これらのセラミックグリーンシートに配線導体１４を導出させるための貫通孔や貫通穴１２ａを打ち抜き法で形成する。   Further, the above package is manufactured as follows by a ceramic green sheet lamination method. First, a ceramic green sheet to be the base 11 and a ceramic green sheet to be the frame 12 are prepared, and through holes and through holes 12a for leading the wiring conductors 14 to these ceramic green sheets are formed by a punching method.

次に、基体１１となるセラミックグリーンシートの積層体（以下、基体１１となるセラミックグリーンシートの積層体を単に積層体Ａという）の貫通孔および所定の部位に、メタライズ層からなる配線導体１４となる導体ペーストをスクリーン印刷法等で印刷塗布する。また、枠体１２となるセラミックグリーンシートの積層体（以下、枠体１２となるセラミックグリーンシートの積層体を単に積層体Ｂという）の貫通穴１２ａとなる貫通孔の内周面に光反射層１６となる導体ペーストをスクリーン印刷法等で印刷塗布する。   Next, a wiring conductor 14 made of a metallized layer is formed in a through hole and a predetermined portion of a laminate of ceramic green sheets to be the base 11 (hereinafter, a laminate of ceramic green sheets to be the base 11 is simply referred to as a laminate A). A conductive paste is printed by a screen printing method or the like. Further, a light reflecting layer is formed on the inner peripheral surface of the through hole serving as the through hole 12a of the laminated body of the ceramic green sheets to be the frame body 12 (hereinafter, the laminated body of the ceramic green sheets to be the frame body 12 is simply referred to as the laminated body B). A conductor paste No. 16 is applied by screen printing or the like.

次に、積層体Ａ，Ｂを重ねて接着してパッケージを形成するための積層体とし、これを所定寸法に切断して成形体とし、高温（１６００℃程度）で焼成して焼結体となす。その後、配線導体１４およびメタライズ層の露出表面に、Ｎｉ、Ａｕ、パラジウム（Ｐｄ）、白金（Ｐｔ）等のめっき金属層を無電解めっき法や電解めっき法により被着させることによって、パッケージが製作される。   Next, the laminated bodies A and B are stacked and bonded to form a laminated body for forming a package, which is cut into a predetermined size to form a molded body, which is fired at a high temperature (about 1600 ° C.) Eggplant. Thereafter, a package is manufactured by depositing a plated metal layer such as Ni, Au, palladium (Pd), or platinum (Pt) on the exposed surface of the wiring conductor 14 and the metallized layer by an electroless plating method or an electrolytic plating method. Is done.

また、発光装置の発光効率をさらに高いものとするとともに、搭載部１１ａおよび配線導体１４と、発光素子１３と、ボンディングワイヤ１６との接続性を強固なものとするために、枠体１２の貫通穴１２ａの内周面に銀めっき層が露出するように被着されるとともに、配線導体１４の露出する表面に金めっき層が露出するように被着されたパッケージが提案されている。
特開２００２−２３２０１７号公報 Further, in order to further increase the light emission efficiency of the light emitting device, and to enhance the connectivity between the mounting portion 11a and the wiring conductor 14, the light emitting element 13, and the bonding wire 16, the penetration of the frame 12 is performed. A package has been proposed in which a silver plating layer is deposited on the inner peripheral surface of the hole 12a so that the gold plating layer is exposed on the exposed surface of the wiring conductor 14.
Japanese Patent Laid-Open No. 2002-232017

しかしながら、上記従来のパッケージにおいては、銀めっき層を下地であるニッケルめっき層上に被着する際に、銀めっき層とニッケルとの接着強度が弱いため、良好に銀めっき層を貫通穴１２ａの内周面に被着できず、発光素子の発光する光を外部に良好に放射できないという問題点を有していた。   However, in the conventional package described above, when the silver plating layer is deposited on the nickel plating layer which is the base, the adhesive strength between the silver plating layer and nickel is weak, so that the silver plating layer can be satisfactorily attached to the through hole 12a. There was a problem that the inner peripheral surface could not be deposited and the light emitted from the light emitting element could not be radiated well to the outside.

また、電解めっき法にて配線導体１４や搭載部１１ａに金めっき層を被着した後に、貫通穴１２ａの内周面に銀めっき層を被着する場合には、配線導体１４や搭載部１１ａに金めっき層を被着するための金めっき浴中にパッケージを浸漬した際に、貫通穴１２ａの内周面に被着されたニッケルめっき層のニッケルが金めっき処理中に金めっき浴中に溶出してしまい、配線導体１４や搭載部１１ａの金めっき層上に被着したり、銀めっき処理前の搬送時の振動等により、ニッケルめっき層からニッケル粒子が剥がれて配線導体１４や搭載部１１ａの金めっき層上に付着したりして、発光素子１３の固着性の低下や、ボンディング性の低下が発生するというという問題点を有していた。   Further, when a silver plating layer is applied to the inner peripheral surface of the through hole 12a after the gold plating layer is applied to the wiring conductor 14 or the mounting portion 11a by the electrolytic plating method, the wiring conductor 14 or the mounting portion 11a. When the package is immersed in a gold plating bath for depositing a gold plating layer on the nickel plating layer, the nickel of the nickel plating layer deposited on the inner peripheral surface of the through hole 12a is in the gold plating bath during the gold plating process. The nickel particles are peeled off from the nickel plating layer due to the elution and being deposited on the gold plating layer of the wiring conductor 14 and the mounting portion 11a, or due to vibration during transportation before the silver plating process. 11a has a problem in that the adhesion of the light emitting element 13 and the bonding property are deteriorated due to adhesion on the gold plating layer 11a.

また、電解めっき法にて貫通穴１２ａの内周面に銀めっき層を被着した後に、配線導体１４や搭載部１１ａに金めっき層を被着する場合には、銀と金とのイオン化傾向差により、銀と金が置換して銀めっき層上に金粒子が被着し、その結果、貫通穴１２ａの内周面の銀めっき層が変色するとともに、発光素子１３の発光する光に対する反射率が低下するという問題点を有していた。   Further, when a gold plating layer is applied to the wiring conductor 14 or the mounting portion 11a after the silver plating layer is applied to the inner peripheral surface of the through hole 12a by electrolytic plating, the ionization tendency between silver and gold Due to the difference, silver and gold are substituted and gold particles are deposited on the silver plating layer. As a result, the silver plating layer on the inner peripheral surface of the through hole 12a is discolored, and the light emitting element 13 reflects light emitted from the light. There was a problem that the rate decreased.

従って、本発明は上記従来技術の問題点を鑑み完成されたものであり、その目的は、発光素子１３の光を効率良く反射し、均一かつ良好に外部に放射することができるとともに、各部材との接合を強固なものにすることができる発光素子収納用パッケージおよび発光装置ならびに照明装置を提供することにある。   Accordingly, the present invention has been completed in view of the above-mentioned problems of the prior art, and the object thereof is to efficiently reflect the light of the light emitting element 13 and radiate it uniformly and satisfactorily to the outside. It is an object of the present invention to provide a light emitting element storage package, a light emitting device, and an illuminating device that can be firmly joined to each other.

本発明の発光素子収納用パッケージは、上面に発光素子の搭載部を有する平板状の基体と、該基体の上面に前記搭載部を取り囲むように接合された、内周面に金めっき層と銀めっき層とが順次被着されてなる光反射層を有する枠体と、前記基体の上面から側面または下面に導出された、露出した表面に金めっき層が形成された配線導体と、前記配線導体に電気的に接続された、前記配線導体の表面に前記金めっき層を形成するための第一のめっき用導体と、該第一のめっき用導体とは絶縁されて前記光反射層に電気的に接続された、前記枠体の内周面に前記金めっき層および前記銀めっき層を形成するための第二のめっき用導体とを具備し、前記基体が第一の基板および該第一の基板の上面に配設された第二の基板からなり、前記第一のめっき用導体が前記第一の基板の上面に位置するとともに前記第二のめっき用導体が前記第二の基板の上面に位置して、前記第一のめっき用導体および前記第二のめっき用導体が前記第二の基板を介して電気的に絶縁されていることを特徴とする。
The light emitting element storage package of the present invention includes a flat base having a light emitting element mounting portion on the upper surface, and a gold plating layer and silver on the inner peripheral surface joined to the upper surface of the base so as to surround the mounting portion. A frame having a light reflection layer formed by sequentially depositing a plating layer, a wiring conductor led out from an upper surface to a side surface or a lower surface of the substrate, and having a gold plating layer formed on an exposed surface; and the wiring conductor A first plating conductor for forming the gold plating layer on the surface of the wiring conductor , electrically connected to the wiring conductor, and the first plating conductor is insulated and electrically connected to the light reflecting layer And a second plating conductor for forming the gold plating layer and the silver plating layer on the inner peripheral surface of the frame body , the base being the first substrate and the first A second substrate disposed on the upper surface of the substrate, The first plating conductor and the second plating conductor are located on the upper surface of the first substrate and the second plating conductor is located on the upper surface of the second substrate. It is electrically insulated through the second substrate .

本発明の発光素子収納用パッケージは、上面に発光素子の搭載部を有する平板状の基体と、基体の上面に前記搭載部を取り囲むように接合された枠体と、基体の上面から側面または下面に導出された、露出した表面に金めっき層が形成された配線導体とを具備しており、枠体は、内周面に金めっき層と銀めっき層とが順次被着されてなる光反射層が形成されていることから、銀めっき層と金めっき層の接着強度が強いため、銀めっき層を枠体の内周面に強固に被着形成させることができる。従って、発光素子の光を高い反射率を有する銀めっき層上で良好に反射して、外部に放射することができるようになる。
このとき、配線導体に電気的に接続された第１のめっき用導体と、第１のめっき用導体とは絶縁されて光反射層に電気的に接続された第２のめっき用導体とをさらに備えていることから、容易に配線導体上に金めっき層を形成するとともに枠体の内周面に金めっき層と銀めっき層を形成することができる。 The light emitting element storage package of the present invention includes a flat base having a light emitting element mounting portion on the upper surface, a frame body joined to the upper surface of the base so as to surround the mounting portion, and a side surface or a lower surface from the upper surface of the base. And a wiring conductor having a gold plating layer formed on the exposed surface, and the frame is a light reflecting member in which a gold plating layer and a silver plating layer are sequentially deposited on the inner peripheral surface. Since the layer is formed, since the adhesive strength between the silver plating layer and the gold plating layer is strong, the silver plating layer can be firmly formed on the inner peripheral surface of the frame. Therefore, the light of the light emitting element can be favorably reflected on the silver plating layer having a high reflectance and can be emitted to the outside.
At this time, a first plating conductor electrically connected to the wiring conductor and a second plating conductor electrically insulated from the first plating conductor and electrically connected to the light reflecting layer are further provided. Since it has, it can form a gold plating layer on a wiring conductor easily, and can form a gold plating layer and a silver plating layer in the inner peripheral surface of a frame.

また、枠体の内周面の下地としてのニッケルめっき層を形成した場合に、ニッケルめっき層上に金めっき層が被着しているので、貫通穴１２ａの内周面に被着されたニッケルめっき層のニッケルが金めっき処理中に金めっき浴中に溶出して、配線導体や搭載部の金めっき層上に被着したり、銀めっき処理前の搬送時の振動等により、ニッケルめっき層からニッケル粒子が剥がれて配線導体や搭載部の金めっき層上に付着したりして、発光素子の固着性の低下や、ボンディング性の低下を抑制することができる。   In addition, when a nickel plating layer is formed as a base on the inner peripheral surface of the frame, the gold plating layer is deposited on the nickel plating layer, so that the nickel deposited on the inner peripheral surface of the through hole 12a Nickel in the plating layer elutes into the gold plating bath during the gold plating process and adheres to the gold plating layer on the wiring conductor and mounting part, or due to vibration during transportation before the silver plating process, etc. Thus, the nickel particles are peeled off and adhered onto the wiring conductor or the gold plating layer of the mounting portion, so that it is possible to suppress a decrease in the fixing property of the light emitting element and a decrease in the bonding property.

本発明の発光素子収納用パッケージを以下に詳細に説明する。図１（ａ）は、本発明のパッケージの実施の形態の一例を示す断面図、図１（ｂ）は図１（ａ）のパッケージにおける枠体の要部拡大断面図を示しており、１は基体、２は枠体であり、主としてこれらで発光素子３を収容するためのパッケージが構成されている。   The light emitting element storage package of the present invention will be described in detail below. FIG. 1A is a cross-sectional view showing an example of an embodiment of a package of the present invention, and FIG. 1B is an enlarged cross-sectional view of a main part of a frame body in the package of FIG. Is a base body, and 2 is a frame, which mainly constitutes a package for housing the light emitting element 3.

本発明の発光素子収納用パッケージは、上面に発光素子３の搭載部１ａを有する平板状の基体１と、基体１の上面に搭載部１ａを取り囲むように接合された枠体２と、基体１の上面から側面または下面に導出された配線導体４ａ，４ｂとを具備しており、枠体２は、内周面に金めっき層と銀めっき層とが順次被着されてなる光反射層６が形成されている。   The light emitting element storage package of the present invention includes a flat base 1 having a mounting portion 1a for the light emitting element 3 on the upper surface, a frame 2 joined to the upper surface of the base 1 so as to surround the mounting portion 1a, and the base 1 Wiring conductors 4a and 4b led out from the upper surface to the side surface or the lower surface, and the frame 2 has a light reflecting layer 6 in which a gold plating layer and a silver plating layer are sequentially deposited on the inner peripheral surface. Is formed.

本発明の基体１は、酸化アルミニウム質焼結体（アルミナセラミックス）、窒化アルミニウム質焼結体等のセラミックスや樹脂から成る直方体状や四角平板状等である。そして、基体１は、発光素子３を支持する支持体であり、その上面に発光素子３を搭載する搭載部１ａを有している。   The substrate 1 of the present invention has a rectangular parallelepiped shape or a rectangular flat plate shape made of ceramics or resin such as an aluminum oxide sintered body (alumina ceramics) or an aluminum nitride sintered body. And the base | substrate 1 is a support body which supports the light emitting element 3, and has the mounting part 1a which mounts the light emitting element 3 on the upper surface.

搭載部１ａは導体であってもよく、基体１の上面の一部であってもよい。本実施例では搭載部１ａは配線導体４ａの一部から成る導体である例を示している。   The mounting portion 1a may be a conductor or a part of the upper surface of the base body 1. In the present embodiment, an example in which the mounting portion 1a is a conductor formed of a part of the wiring conductor 4a is shown.

基体１が例えば酸化アルミニウム質焼結体から成る場合、酸化アルミニウム、酸化珪素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機バインダー、溶剤等を添加混合して泥漿状となし、これを従来周知のドクターブレード法やカレンダーロール法等によりシート状に成形してセラミックグリーンシート（セラミック生シート）を得、しかる後、セラミックグリーンシートに適当な打ち抜き加工を施してこれを複数枚積層し、高温（約１６００℃）で焼成することによって製作される。   When the substrate 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder, solvent, etc. are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a mud. A ceramic green sheet (ceramic green sheet) is obtained by forming into a sheet shape by a well-known doctor blade method or calendar roll method, etc. After that, the ceramic green sheet is subjected to appropriate punching processing, and a plurality of these are laminated to obtain a high temperature. It is manufactured by firing at (about 1600 ° C.).

また基体１は、その搭載部１ａから下面にかけて導出される、露出した表面に金めっき層が被着された配線導体４ａおよび搭載部１ａの周辺から下面にかけて導出される、露出した表面に金めっき層が被着された配線導体４ｂが被着形成されている。配線導体４ａ，４ｂは、例えば、タングステンやモリブデン等の金属粉末メタライズから成り、内部に収容する発光素子３を外部に電気的に接続するための導電路として機能する。そして、配線導体４ａの一部からなる搭載部１ａには発光ダイオード，半導体レーザ等の発光素子３が金−シリコン合金や銀−エポキシ樹脂等の導電性接合材により固着されるとともに、配線導体４ｂには発光素子３の電極がボンディングワイヤ５を介して電気的に接続される。また、発光素子３は、搭載部１ａおよび配線導体４ｂにフリップチップ実装されていても構わない。   The substrate 1 is led out from the mounting portion 1a to the lower surface, the wiring conductor 4a having a gold plating layer deposited on the exposed surface, and the exposed surface led out from the periphery to the lower surface of the mounting portion 1a. A wiring conductor 4b having a layer deposited thereon is deposited. The wiring conductors 4a and 4b are made of, for example, metal powder metallization such as tungsten or molybdenum, and function as a conductive path for electrically connecting the light emitting element 3 accommodated therein to the outside. A light emitting element 3 such as a light emitting diode or a semiconductor laser is fixed to the mounting portion 1a formed of a part of the wiring conductor 4a by a conductive bonding material such as gold-silicon alloy or silver-epoxy resin, and the wiring conductor 4b. The electrode of the light emitting element 3 is electrically connected through the bonding wire 5. The light emitting element 3 may be flip-chip mounted on the mounting portion 1a and the wiring conductor 4b.

なお、搭載部１ａおよび配線導体４ａ，４ｂは、ニッケル等の耐蝕性に優れる金属を下地金属層として１〜20μｍ程度の厚みに被着させておくと、搭載部１ａおよび配線導体４ａ，４ｂが酸化腐蝕するのを有効に防止できるとともに、搭載部１ａと発光素子３との固着および配線導体４ｂとボンディングワイヤ５との接合を強固なものとすることができる。したがって、搭載部１ａおよび配線導体４ａ，４ｂの露出表面には、厚み１〜10μｍ程度のニッケルめっき層と厚み0.1〜３μｍ程度の金めっき層とが電解めっき法や無電解めっき法により順次被着されている。   The mounting portion 1a and the wiring conductors 4a and 4b can be formed by attaching a metal having excellent corrosion resistance such as nickel as a base metal layer to a thickness of about 1 to 20 μm. Oxidation and corrosion can be effectively prevented, and the mounting portion 1a and the light emitting element 3 can be firmly fixed and the wiring conductor 4b and the bonding wire 5 can be firmly bonded. Therefore, a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited on the exposed surfaces of the mounting portion 1a and the wiring conductors 4a and 4b by an electrolytic plating method or an electroless plating method. Has been.

本発明の枠体２は、セラミックスや樹脂、金属から成り、基体１の上面に搭載部１ａを取り囲むように接合されている。例えば、枠体２が酸化アルミニウム質燒結体から成る場合、セラミックグリーンシートに、枠体２の中央部に発光素子３を収容するための横断面形状が円形状や四角形状の貫通穴２ａを形成するための打ち抜き加工を施し、これを複数枚積層し、高温（１６００℃）で焼成することによって製作される。   The frame body 2 of the present invention is made of ceramics, resin, or metal, and is joined to the upper surface of the base 1 so as to surround the mounting portion 1a. For example, when the frame 2 is made of an aluminum oxide sintered body, a through-hole 2a having a circular or square cross-sectional shape for accommodating the light emitting element 3 is formed in the center of the frame 2 on the ceramic green sheet. It is manufactured by performing a punching process in order to stack a plurality of sheets and firing them at a high temperature (1600 ° C.).

本発明の枠体２は、枠体２用のセラミックグリーンシートに貫通穴２ａを打ち抜き金型を用いて打ち抜くことによって形成することができる。このとき、枠体２用のセラミックグリーンシートに形成される貫通穴２ａが形成される。そして、所定寸法に切断して形成した枠体２用のセラミックグリーンシートを基体１用のグリーンシート上に積層し、高温（１６００℃）で焼成することで基体１と一体に枠体２を形成することができる。なお、枠体２および基体１は別々に作製したものを接合材で接合してもよい。   The frame body 2 of the present invention can be formed by punching through holes 2a in a ceramic green sheet for the frame body 2 using a punching die. At this time, the through hole 2a formed in the ceramic green sheet for the frame 2 is formed. Then, the ceramic green sheet for the frame 2 formed by cutting to a predetermined size is laminated on the green sheet for the substrate 1, and is fired at a high temperature (1600 ° C.) to form the frame 2 integrally with the substrate 1. can do. The frame 2 and the base 1 may be separately manufactured and bonded with a bonding material.

また、枠体２の貫通穴２ａの内周面は、傾斜面となっているとともに、内周面と基体１の上面との成す角度θが３５〜７０°の角度で上方に向かうに伴って外側に広がっていることが好ましい。角度θが７０°を超えると、貫通穴２ａ内に収容された発光素子３が発光する光を外部に対して良好に反射することが困難となる傾向にある。一方、角度θが３５°未満であると、貫通穴２ａの内周面をそのような角度で安定かつ効率良く形成することが困難となる傾向にあるとともに、パッケージが大型化しやすくなる。   Further, the inner peripheral surface of the through hole 2a of the frame body 2 is an inclined surface, and the angle θ formed by the inner peripheral surface and the upper surface of the base body 1 is increased upward at an angle of 35 to 70 °. It is preferable to spread outward. When the angle θ exceeds 70 °, it tends to be difficult to favorably reflect the light emitted by the light emitting element 3 accommodated in the through hole 2a to the outside. On the other hand, when the angle θ is less than 35 °, it tends to be difficult to stably and efficiently form the inner peripheral surface of the through hole 2a at such an angle, and the package is likely to be enlarged.

また、枠体２の貫通穴２ａの横断面形状は、円形状、長円形状、楕円形状、四角形状、多角形状等の種々の形状で良いが、特に円形状が好ましい。この場合、貫通穴２ａに収容された発光素子３が発光する光を、貫通穴２ａの内周面に形成された金属層６の表面でパッケージの上方に満遍なく反射させて外部に極めて均一に放射することができる。   The cross-sectional shape of the through hole 2a of the frame body 2 may be various shapes such as a circular shape, an oval shape, an elliptical shape, a quadrangular shape, and a polygonal shape, but a circular shape is particularly preferable. In this case, the light emitted from the light emitting element 3 accommodated in the through hole 2a is uniformly reflected above the package by the surface of the metal layer 6 formed on the inner peripheral surface of the through hole 2a, and radiated to the outside very uniformly. can do.

そして、本発明においては、枠体２の貫通穴２ａの内周面に金めっき層６ｃと銀めっき層６ｄとが順次被着されてなる光反射層６が形成されている。これにより、銀めっき層６ｄと金めっき層６ｃの接着強度が強いため、銀めっき層６ｄを金めっき層６ｃに強固に被着することができるので、銀めっき層６ｄを枠体の内周面に強固に被着形成することができる。従って、発光素子３の光を高い反射率を有する銀めっき層６ｄ上で良好に反射して、外部に放射することができるようになる。   And in this invention, the light reflection layer 6 by which the gold plating layer 6c and the silver plating layer 6d are adhere | attached one by one on the internal peripheral surface of the through-hole 2a of the frame 2 is formed. Thereby, since the adhesive strength between the silver plating layer 6d and the gold plating layer 6c is strong, the silver plating layer 6d can be firmly attached to the gold plating layer 6c, so that the silver plating layer 6d is attached to the inner peripheral surface of the frame body. And can be firmly formed. Therefore, the light of the light emitting element 3 can be favorably reflected on the silver plating layer 6d having a high reflectance and can be emitted to the outside.

また、枠体２の内周面の下地としてのニッケルめっき層６ｂを形成した場合に、ニッケルめっき層６ｂ上に金めっき層６ｃが被着しているので、枠体２の貫通穴１２ａの内周面に被着されたニッケルめっき層のニッケルが金めっき処理中に金めっき浴中に溶出して、配線導体４ａ，４ｂや搭載部１ａの金めっき層上に被着したり、銀めっき処理前の搬送時の振動等により、ニッケルめっき層からニッケル粒子が剥がれて配線導体４ａ，４ｂや搭載部１ａの金めっき層上に付着したりして、発光素子３の固着性の低下や、ボンディング性が低下するのを抑制することができる。   Further, when the nickel plating layer 6b is formed as the base of the inner peripheral surface of the frame body 2, since the gold plating layer 6c is deposited on the nickel plating layer 6b, the inside of the through hole 12a of the frame body 2 Nickel of the nickel plating layer deposited on the peripheral surface elutes into the gold plating bath during the gold plating treatment, and is deposited on the gold plating layers of the wiring conductors 4a and 4b and the mounting portion 1a, or silver plating treatment. The nickel particles are peeled off from the nickel plating layer due to vibration or the like during the previous conveyance, and adhere to the wiring conductors 4a and 4b or the gold plating layer of the mounting portion 1a. It is possible to suppress the deterioration of the property.

このような光反射層６は、枠体２の貫通穴２ａの内周面上に形成されたタングステン、モリブデン等のメタライズから成るメタライズ層６ａ上に１〜２０μｍ程度の厚みのニッケルめっき層６ｂ、０．０１〜３μｍ程度の金めっき層６ｃ、０．１〜４μｍ程度の銀めっき層６ｄを無電解めっき法または電解めっき法にて順次被着することで形成することができる。   Such a light reflection layer 6 has a nickel plating layer 6b having a thickness of about 1 to 20 μm on a metallization layer 6a made of metallization such as tungsten or molybdenum formed on the inner peripheral surface of the through hole 2a of the frame 2. It can be formed by sequentially depositing a gold plating layer 6c of about 0.01 to 3 μm and a silver plating layer 6d of about 0.1 to 4 μm by an electroless plating method or an electrolytic plating method.

なお、金めっき層６ｃ上に被着形成される銀めっき層６ｄの厚みは、特に、２μｍ以上であることが好ましい。これにより、銀めっき層６ｄの表面の凹凸を小さくすることができるとともに、銀めっき層６ｄの表面を光沢のあるものとして、発光素子の発光する光を反射しやすくすることができる。   In addition, the thickness of the silver plating layer 6d deposited on the gold plating layer 6c is particularly preferably 2 μm or more. Thereby, the unevenness | corrugation of the surface of the silver plating layer 6d can be made small, and the surface of the silver plating layer 6d can be made glossy, and the light emitted from the light emitting element can be easily reflected.

また、貫通穴２ａの内周面の光反射層６の表面の算術平均粗さＲａは３μｍ以下が好ましい。３μｍを超えると、貫通穴２ａ内に収容される発光素子３が発光する光が散乱し、反射光を高い反射率で外部に均一に放射することが困難になる。   In addition, the arithmetic average roughness Ra of the surface of the light reflecting layer 6 on the inner peripheral surface of the through hole 2a is preferably 3 μm or less. If it exceeds 3 μm, the light emitted from the light emitting element 3 accommodated in the through hole 2a is scattered, and it becomes difficult to uniformly radiate the reflected light to the outside with high reflectivity.

なお、枠体２の内周面のニッケルめっき層６ｂや金めっき層６ｃを形成する際に、搭載部１ａおよび配線導体４ａ，４ｂ上にも同時にニッケルめっき層および金めっき層を被着することが好ましい。これにより、工程を簡略化することができるとともに、銀めっき層６ｄを最終のめっき工程としているので、銀と金が置換して、光反射層６の表面に金が被着して変色や反射率の低下を引き起こすことがないとともに、光反射層６上に金めっき層が被着するのを防止するためのマスキング等を行う必要がなくてすむ。   In addition, when forming the nickel plating layer 6b and the gold plating layer 6c on the inner peripheral surface of the frame body 2, the nickel plating layer and the gold plating layer are simultaneously applied onto the mounting portion 1a and the wiring conductors 4a and 4b. Is preferred. As a result, the process can be simplified, and the silver plating layer 6d is used as the final plating process. Therefore, silver and gold are replaced, and gold is deposited on the surface of the light reflection layer 6 to cause discoloration or reflection. It is not necessary to perform masking or the like for preventing the gold plating layer from being deposited on the light reflecting layer 6 while not causing a decrease in the rate.

このようなパッケージは、例えば、図２に示すように、パッケージが非常に小型な場合の取扱いを容易とし、多数のパッケージを効率良く製造するために、複数のパッケージを縦横に配列した多数個取り用の基板として作製される。以下この多数個取り用の基板を用いて本発明の発光素子収納用パッケージの製造方法について説明する
図２（ａ）は多数個取り基板の平面図である。図２（ｂ）は、搭載部１ａ、配線導体４ａ，４ｂが電気的に接続された第一のめっき用導体層７が形成された基体１用の多数個取り用の基板１’のめっき用導体層７を示す内部平面図（搭載部１ａ、配線導体４ａ，４ｂは図示せず）である。図２（ｃ）は、枠体２の貫通孔２ａの内周面のメタライズ層６ａに電気的に接続された第二のめっき導体層８が形成された枠体２用の多数個取り用の基板２’の第二のめっき導体層８を示す内部平面図（メタライズ層６ａは図示せず）である。図２（ｄ）は、多数個取り用の基板に光反射層６を被着形成した後の平面図である。また、図３は、多数個取り用の基板を用いて作製された発光素子収納用パッケージの断面図である。 For example, as shown in FIG. 2, such a package is easy to handle when the package is very small, and in order to efficiently manufacture a large number of packages, a large number of packages are arranged in a vertical and horizontal direction. It is produced as a substrate for use. Hereinafter, a method for manufacturing a light emitting element storage package according to the present invention will be described using the substrate for multi-piece production. FIG. 2A is a plan view of the multi-piece substrate. FIG. 2 (b) is for plating a multi-piece substrate 1 'for a substrate 1 on which a first plating conductor layer 7 to which a mounting portion 1a and wiring conductors 4a and 4b are electrically connected is formed. FIG. 6 is an internal plan view showing the conductor layer 7 (the mounting portion 1a and the wiring conductors 4a and 4b are not shown). FIG. 2 (c) shows a multi-piece production for the frame 2 in which the second plated conductor layer 8 electrically connected to the metallized layer 6a on the inner peripheral surface of the through hole 2a of the frame 2 is formed. It is an internal top view (metallized layer 6a is not shown) which shows the 2nd plating conductor layer 8 of board | substrate 2 '. FIG. 2D is a plan view after the light reflecting layer 6 is formed on the substrate for multi-piece fabrication. FIG. 3 is a cross-sectional view of a light-emitting element storage package manufactured using a multi-chip substrate.

まず、図２（ｂ）の多数個取り用の基板１’と図２（ｃ）の多数個取り用の基板２’とを接合することにより、図２（ａ）に示す基体１と枠体２とが一体となった多数個取り用の基板を形成し、この多数個取り用の基板をニッケルめっき浴に浸漬した後、第一のめっき用導体層７および第二のめっき用導体層８を介して、電解めっき法により、搭載部１ａ，配線導体４ａ，４ｂ、枠体２の内周面のメタライズ層６ａ上にニッケルめっき層を被着する。   First, the base 1 and the frame shown in FIG. 2 (a) are joined by joining the multi-piece substrate 1 ′ of FIG. 2 (b) and the multi-piece substrate 2 ′ of FIG. 2 (c). 2 is formed, and the substrate for multi-cavity formation is immersed in a nickel plating bath, and then the first plating conductor layer 7 and the second plating conductor layer 8 are formed. Then, a nickel plating layer is deposited on the metallized layer 6a on the inner peripheral surface of the mounting portion 1a, the wiring conductors 4a and 4b, and the frame body 2 by electrolytic plating.

次に、多数個取り用の基板を金めっき浴に浸漬した後、第一のめっき用導体層７および第二のめっき用導体層８を介して、電解めっき法により、搭載部１ａ，配線導体４ａ，４ｂ、枠体２の内周面のニッケルめっき層６ｂ上に金めっき層を被着する。   Next, after immersing the multi-piece substrate in a gold plating bath, the mounting portion 1a and the wiring conductor are electroplated through the first plating conductor layer 7 and the second plating conductor layer 8. 4a, 4b, a gold plating layer is deposited on the nickel plating layer 6b on the inner peripheral surface of the frame 2.

次に、多数個取り用の基板を銀めっき浴に浸漬した後、第二のめっき用導体層８を介して、電解めっき法により、光反射層６の金めっき層６ｃ上に銀めっき層６ｄを被着する。   Next, after immersing the substrate for taking a large number in a silver plating bath, the silver plating layer 6d is formed on the gold plating layer 6c of the light reflection layer 6 by electrolytic plating through the second plating conductor layer 8. Adhere.

これにより、枠体２の内周面には、金めっき層６ｃと銀めっき層６ｄとが順次被着されてなる光反射層６が形成されることとなる。   Thereby, the light reflection layer 6 in which the gold plating layer 6 c and the silver plating layer 6 d are sequentially deposited is formed on the inner peripheral surface of the frame 2.

なお、搭載部１ａ，配線導体４ａ，４ｂ、枠体２の内周面の光反射層６のニッケルめっき層および金めっき層の厚みが異なる場合は、第一のめっき用導体層７および第二のめっき用導体層８のそれぞれを介してニッケルめっき層および金めっき層を被着させることができる。   If the thicknesses of the nickel plating layer and the gold plating layer of the light reflecting layer 6 on the inner peripheral surface of the mounting portion 1a, the wiring conductors 4a and 4b, and the frame 2 are different, the first plating conductor layer 7 and the second plating layer 7 A nickel plating layer and a gold plating layer can be applied through each of the plating conductor layers 8.

そして、個々の発光素子収納用パッケージの領域に分割することで、本発明の発光素子収納用パッケージを得ることができる。   And the light emitting element storage package of this invention can be obtained by dividing | segmenting into the area | region of each light emitting element storage package.

また、本発明において、金めっき層６ｃは、その厚みが０．２μｍ以上であることが好ましい。これにより、貫通穴２ａの内周面に被着したニッケルめっき層のニッケルが金めっき浴中に溶出するのをより有効に低減することができる。その結果、金めっき層６ｃを被着した際に、貫通穴２ａの内周面に被着したニッケルめっき層のニッケルが金めっき浴中に溶出して、配線導体や搭載部上に被着するのを有効に防止できる。従って、発光素子３の搭載部１ａへの固着性や配線導体４ａ，４ｂへのボンディング性の低下を防止することができる。   In the present invention, the gold plating layer 6c preferably has a thickness of 0.2 μm or more. Thereby, it can reduce more effectively that the nickel of the nickel plating layer deposited on the inner peripheral surface of the through hole 2a is eluted into the gold plating bath. As a result, when the gold plating layer 6c is deposited, nickel of the nickel plating layer deposited on the inner peripheral surface of the through hole 2a elutes into the gold plating bath and deposits on the wiring conductor and the mounting portion. Can be effectively prevented. Accordingly, it is possible to prevent the light-emitting element 3 from being fixed to the mounting portion 1a and the bonding property to the wiring conductors 4a and 4b from being deteriorated.

また、ニッケルめっき層、金めっき層は複数層のめっき層により形成されていても構わない。例えば、ニッケルめっき層上に、０．０１μｍ程度の金めっき層を被着した後、再度金めっき層を被着することで、０．２μｍ以上の金めっき層をニッケルめっき層上に強固に被着形成することができる。   Moreover, the nickel plating layer and the gold plating layer may be formed of a plurality of plating layers. For example, a gold plating layer of about 0.01 μm is deposited on a nickel plating layer, and then a gold plating layer is deposited again, so that a gold plating layer of 0.2 μm or more is firmly coated on the nickel plating layer. It can be formed.

本発明の発光装置は、本発明のパッケージと、搭載部１ａに搭載された発光素子３と、発光素子３を覆う透光性部材とを具備している。これにより、発光素子３が発光する光を良好に反射し、均一かつ効率良く外部に放射することができる、発光効率の高い高性能のものとなる。   The light emitting device of the present invention includes the package of the present invention, the light emitting element 3 mounted on the mounting portion 1a, and a translucent member that covers the light emitting element 3. As a result, the light emitted from the light emitting element 3 is well reflected and can be radiated to the outside uniformly and efficiently.

透光性部材はシリコーン等の透明樹脂、または、透明樹脂板やガラス板などが用いられる。透光性部材が透明樹脂の場合、透光性部材は発光素子３およびその周囲のみを覆っていてもよいし、枠体２の貫通穴２ａ内に充填されて発光素子３を覆っていてもよい。また、透光性部材が透明樹脂板やガラス板などの場合、枠体２の上面や内周面に枠体２の貫通穴２ａを塞ぐように取着される。   As the translucent member, a transparent resin such as silicone, or a transparent resin plate or a glass plate is used. When the translucent member is a transparent resin, the translucent member may cover only the light emitting element 3 and the periphery thereof, or may fill the through hole 2a of the frame 2 and cover the light emitting element 3. Good. Further, when the translucent member is a transparent resin plate or a glass plate, the translucent member is attached so as to block the through hole 2a of the frame body 2 on the upper surface or the inner peripheral surface of the frame body 2.

さらに、透光性部材に蛍光材を含有させたり、被着させたりすることにより、発光素子３から発光される光を波長変換して発光装置から発せられる放射光を所望の光スペクトルを有する光としてもよい。   Furthermore, the light having a desired light spectrum is emitted from the light emitting device by converting the wavelength of the light emitted from the light emitting element 3 by adding or attaching a fluorescent material to the translucent member. It is good.

本発明の発光装置は、１個のものを所定の配置となるように設置したことにより、または複数個を、例えば、格子状や千鳥状，放射状，複数の発光装置から成る円状や多角形状の発光装置群を同心状に複数群形成したもの等の所定の配置となるように設置したことにより、照明装置とすることができる。これにより、半導体から成る発光素子３の電子の再結合による発光を利用しているため、従来の放電を用いた照明装置よりも低消費電力かつ長寿命とすることが可能であり、発熱の小さな小型の照明装置とすることができる。その結果、発光素子３から発生する光の中心波長の変動を抑制することができ、長期間にわたり安定した放射光強度かつ放射光角度（配光分布）で光を照射することができるとともに、照射面における色むらや照度分布の偏りが抑制された照明装置とすることができる。   The light-emitting device of the present invention is a single light-emitting device installed in a predetermined arrangement, or a plurality of, for example, a lattice shape, a staggered shape, a radial shape, a circular shape or a polygonal shape made up of a plurality of light-emitting devices. By installing the light emitting device groups in a predetermined arrangement such as a plurality of light emitting device groups formed concentrically, a lighting device can be obtained. Thereby, since light emission by recombination of electrons of the light emitting element 3 made of a semiconductor is used, it is possible to achieve lower power consumption and longer life than a lighting device using a conventional discharge, and generate less heat. It can be set as a small illuminating device. As a result, fluctuations in the center wavelength of the light generated from the light emitting element 3 can be suppressed, and light can be emitted with a stable radiant light intensity and radiant light angle (light distribution distribution) over a long period of time. It can be set as the illuminating device by which the color nonuniformity in the surface and the bias of illuminance distribution were suppressed.

また、複数の本発明の発光装置を光源として所定の配置に設置するとともに、これらの発光装置の周囲に任意の形状に光学設計した反射治具や光学レンズ、光拡散板等を設置することにより、任意の配光分布の光を放射できる照明装置とすることができる。   Further, by installing a plurality of light emitting devices of the present invention in a predetermined arrangement as a light source, and installing a reflecting jig, an optical lens, a light diffusing plate, etc. optically designed in an arbitrary shape around these light emitting devices It can be set as the illuminating device which can radiate | emit light of arbitrary light distribution.

このような照明装置としては、例えば、室内や室外で用いられる照明器具、電光掲示板、信号機、ディスプレイ等のバックライト（携帯電話等の液晶バックライトやタッチパネル等）、車のヘッドランプ、カメラや携帯電話等のフラッシュライト、スキャナー等の印刷機露光用光源、動画装置、装飾品等が挙げられる。   Such lighting devices include, for example, lighting fixtures used indoors and outdoors, electronic bulletin boards, traffic lights, displays and other backlights (liquid crystal backlights and touch panels such as mobile phones), car headlamps, cameras and mobile phones. Examples include a flashlight such as a telephone, a light source for exposure of a printing machine such as a scanner, a moving image device, and a decoration.

以下、本発明の発光素子収納用パッケージについて評価した結果を実施例に基づき説明する。まず、発光素子収納用パッケージの枠体２の内周面にニッケルめっき層６ｂを４μｍの厚さに形成し、その上に以下のような種々の厚さの金めっき層６ｃを形成した。なお、金めっき層６ｃは、０μｍ、０．０５μｍ、０．１μｍ、０．１５μｍ、０．２μｍ、０．２５μｍ、０．３μｍ、０．５μｍ、０．７５μｍの９種類とし、発光素子収納用パッケージの試料Ｎｏ．１〜Ｎｏ．９とした。これらをｐＨ＝５．８３、液温６５℃の金めっき浴中に２時間浸漬し、金めっき浴中へのニッケルの溶出量を測定した。その結果を表１に示す。

Figure 0004776175
Hereinafter, the evaluation results of the light emitting element storage package of the present invention will be described based on examples. First, a nickel plating layer 6b having a thickness of 4 μm was formed on the inner peripheral surface of the frame 2 of the light emitting element storage package, and a gold plating layer 6c having various thicknesses as described below was formed thereon. In addition, the gold plating layer 6c has nine types of 0 μm, 0.05 μm, 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, 0.5 μm, and 0.75 μm for accommodating the light emitting element. Sample No. of package 1-No. It was set to 9. These were immersed in a gold plating bath having a pH of 5.83 and a liquid temperature of 65 ° C. for 2 hours, and the elution amount of nickel in the gold plating bath was measured. The results are shown in Table 1.
Figure 0004776175

表１の結果から明らかなように、金めっき層６ｃの厚みを厚くすることによって、ニッケルの金めっき浴中への溶出量を減少することができ、特に金めっき層６ｃの厚みを０．２μｍ以上とする（試料Ｎｏ．５〜Ｎｏ．９）ことで、枠体２の内周面に金めっき層６ｃを被着しない場合と比較して、１／２０以下となり優れていることがわかった。   As is clear from the results in Table 1, by increasing the thickness of the gold plating layer 6c, the elution amount of nickel into the gold plating bath can be reduced. In particular, the thickness of the gold plating layer 6c is 0.2 μm. By setting it as the above (sample No.5-No.9), it turned out that it is 1/20 or less and it is excellent compared with the case where the gold plating layer 6c is not attached to the inner peripheral surface of the frame 2. .

次に、搭載部１ａ，配線導体４ａ，４ｂにもニッケルめっき層を４μｍ被着させた上記発光素子収納用パッケージ（試料Ｎｏ．１〜Ｎｏ．９）を上記の金めっき浴中に浸漬し、電解めっき法にて載置部１ａおよび配線導体４ａ，４ｂのニッケルめっき層上に金めっき層を１．５μｍ被着させたものを製作して評価した。評価方法として搭載部１ａのボンディング性を以下のようにして評価した。ボンディング性評価は、搭載部１ａにワイヤボンディングマシンにて２５μｍφの金線ボンディングを行い、金線ボンディングの引っ張り強度およびボールシェア強度評価を行った。   Next, the light emitting element storage package (samples No. 1 to No. 9) in which the nickel plating layer is also deposited on the mounting portion 1a and the wiring conductors 4a and 4b (sample Nos. 1 to 9) is immersed in the gold plating bath, A product obtained by depositing a gold plating layer of 1.5 μm on the nickel plating layer of the mounting portion 1a and the wiring conductors 4a and 4b by electrolytic plating was manufactured and evaluated. As an evaluation method, the bonding property of the mounting portion 1a was evaluated as follows. For the bonding property evaluation, 25 μmφ gold wire bonding was performed on the mounting portion 1a with a wire bonding machine, and the tensile strength and ball shear strength evaluation of the gold wire bonding were performed.

引っ張り強度試験およびボールシェア強度評価試験は、先ず、２５μｍφ金線を用いて最初のボンディング（１ｓｔ）側を加重０．３０Ｎ、温度１８５℃、超音波条件４０ｍＷ、１５ｍｓ、次のボンディング（２ｎｄ）側を加重０．８０Ｎ、温度１８５℃、超音波条件９０ｍＷ、１５ｍｓの後、３５０℃／３ｍｉｎの条件で熱処理した後にワイヤボンディングを行い、これを引っ張り強度試験およびワイヤボールのシェアー強度試験に用いた。   In the tensile strength test and ball shear strength evaluation test, first, using a 25 μmφ gold wire, the first bonding (1st) side is weighted 0.30 N, temperature is 185 ° C., ultrasonic conditions are 40 mW, 15 ms, and the next bonding (2nd) side. Was subjected to heat treatment under conditions of a weight of 0.80 N, a temperature of 185 ° C., an ultrasonic condition of 90 mW, 15 ms, and 350 ° C./3 min, followed by wire bonding, which was used for a tensile strength test and a shear strength test of a wire ball.

引っ張り強度試験は、０．０１０Ｎ未満を×、０．０１０〜０．０１２Ｎを△、０．０１２Ｎを超える場合を○とし、シェアー強度試験は、０．０２０Ｎ未満を×、０．０２１〜０．０３０Ｎを△、０．０３０Ｎを超える場合を○として評価を行った。   In the tensile strength test, X is less than 0.010 N, Δ is 0.010 to 0.012 N, and O is 0.012 N, and the shear strength test is X in less than 0.020 N, 0.021 to 0. Evaluation was performed by setting 030N as Δ, and a case exceeding 0.030N as ◯.

表１の結果から明らかのように、枠体２の金めっき層６ｃの厚みが０．２μｍ以上である試料Ｎｏ．５〜Ｎｏ．９は、引っ張り強度が０．０１２Ｎ以上であるとともに、シェアー強度試験は、０．０３０Ｎ以上であった（表中に○で示す）。また、枠体２の金めっき層６ｃの厚みが０．２μｍ未満である試料２は、引っ張り強度が０．０１０〜０．０１２Ｎであるとともに、シェアー強度試験は、０．０２１〜０．０３０Ｎであった（表中に△で示す）。また、枠体２に金めっき層６ｃを被着していない試料１は、引っ張り強度が０．０１０Ｎ未満であるとともに、シェアー強度試験は、０．０２０Ｎ未満であった（表中に×で示す）。   As is clear from the results in Table 1, the sample No. 2 in which the thickness of the gold plating layer 6c of the frame 2 is 0.2 μm or more. 5-No. No. 9 had a tensile strength of 0.012 N or more and a shear strength test of 0.030 N or more (indicated by a circle in the table). Sample 2 in which the thickness of the gold plating layer 6c of the frame 2 is less than 0.2 μm has a tensile strength of 0.010 to 0.012N, and the shear strength test is 0.021 to 0.030N. (Indicated by Δ in the table). Sample 1 in which the gold plating layer 6c is not attached to the frame 2 has a tensile strength of less than 0.010N and a shear strength test of less than 0.020N (indicated by x in the table). ).

このことから、枠体２の光反射層６における銀めっき層６ｄの下地である金めっき層６ｃの厚みを０．２μｍ以上とすることで、金めっき浴に浸漬した際のニッケルの溶出を低減させることができるとともに、搭載部１ａ，配線導体４ａ，４ｂの密着性やボンディング性を向上させることができることがわかった。また、金めっき浴中へのニッケルの溶出が小さいので、金めっき浴中への不純物の混入を抑えることができる。   From this, the elution of nickel when immersed in the gold plating bath is reduced by setting the thickness of the gold plating layer 6c, which is the base of the silver plating layer 6d in the light reflecting layer 6 of the frame 2, to 0.2 μm or more. It was found that the adhesion and bonding properties of the mounting portion 1a and the wiring conductors 4a and 4b can be improved. Moreover, since the elution of nickel into the gold plating bath is small, it is possible to suppress the contamination of impurities into the gold plating bath.

なお、本発明は上述の実施の形態の例および実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を施すことは何等差し支えない。例えば、図４にパッケージの断面図で示すように、搭載部１ａを基体１の上面の搭載領域として、基体１の上面に樹脂接着剤等の接合材を介して発光素子３を直接搭載するものとし、搭載部１ａの周囲に発光素子３の電極が接続される配線導体４ａ，４ｂを形成していても良い。   It should be noted that the present invention is not limited to the above-described embodiments and examples, and various modifications may be made without departing from the scope of the present invention. For example, as shown in the sectional view of the package in FIG. 4, the light emitting element 3 is directly mounted on the upper surface of the base 1 through a bonding material such as a resin adhesive, with the mounting portion 1 a as the mounting region on the upper surface of the base 1. The wiring conductors 4a and 4b to which the electrodes of the light emitting element 3 are connected may be formed around the mounting portion 1a.

また、光反射層６ｃの銀めっき層６での表面にシリコーン樹脂やエポキシ樹脂などの透明樹脂被膜や、ゾルゲルガラスや低融点ガラス等のガラス被膜が形成されているのがよい。これにより、銀めっき層６が酸化されて光反射率が低下するのを有効に防止できる。   In addition, a transparent resin film such as a silicone resin or an epoxy resin, or a glass film such as sol-gel glass or low-melting glass is preferably formed on the surface of the light reflecting layer 6c on the silver plating layer 6. Thereby, it can prevent effectively that the silver plating layer 6 is oxidized and a light reflectivity falls.

（ａ）は本発明の発光素子収納用パッケージについて実施の形態の一例を示す断面図であり、（ｂ）は本発明の発光素子収納用における要部拡大断面図である。(A) is sectional drawing which shows an example of embodiment about the light emitting element accommodation package of this invention, (b) is a principal part expanded sectional view in light emission element accommodation for this invention. 本発明の発光素子収納用パッケージを作製するための多数個取り用の基板を示すものであり、（ａ）は基板の平面図、（ｂ）は第一のめっき用導体層が形成された基板の基体側の平面図、（ｃ）は第二のめっき用導体層が形成された枠体側の平面図、（ｄ）は光反射層を形成した後の基板の平面図である。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a multi-piece substrate for producing a light emitting element storage package of the present invention, wherein (a) is a plan view of the substrate, and (b) is a substrate on which a first plating conductor layer is formed. FIG. 4C is a plan view of the substrate side, FIG. 4C is a plan view of the frame on which the second plating conductor layer is formed, and FIG. 4D is a plan view of the substrate after the light reflecting layer is formed. 本発明の発光素子収納用パッケージについて実施の形態の他の一例を示す断面図である。It is sectional drawing which shows another example of embodiment about the light emitting element storage package of this invention. 本発明の発光素子収納用パッケージについて実施の形態の他の一例を示す断面図である。It is sectional drawing which shows another example of embodiment about the light emitting element storage package of this invention. 従来の発光素子収納用パッケージの断面図である。It is sectional drawing of the conventional package for light emitting element accommodation.

符号の説明Explanation of symbols

１：基体
１ａ：搭載部
２：枠体
３：発光素子
４ａ，４ｂ：配線導体
６：光反射層
６ｃ：枠体の内周面に形成された金めっき層
６ｄ：銀めっき層 1: Base 1a: Mounting portion 2: Frame body 3: Light emitting element 4a, 4b: Wiring conductor 6: Light reflection layer 6c: Gold plating layer formed on inner peripheral surface of frame body 6d: Silver plating layer

Claims (5)

上面に発光素子の搭載部を有する平板状の基体と、該基体の上面に前記搭載部を取り囲むように接合された、内周面に金めっき層と銀めっき層とが順次被着されてなる光反射層を有する枠体と、前記基体の上面から側面または下面に導出された、露出した表面に金めっき層が形成された配線導体と、前記配線導体に電気的に接続された、前記配線導体の表面に前記金めっき層を形成するための第一のめっき用導体と、該第一のめっき用導体とは絶縁されて前記光反射層に電気的に接続された、前記枠体の内周面に前記金めっき層および前記銀めっき層を形成するための第二のめっき用導体とを具備し、
前記基体が第一の基板および該第一の基板の上面に配設された第二の基板からなり、
前記第一のめっき用導体が前記第一の基板の上面に位置するとともに前記第二のめっき用導体が前記第二の基板の上面に位置して、前記第一のめっき用導体および前記第二のめっき用導体が前記第二の基板を介して電気的に絶縁されていることを特徴とする発光素子収納用パッケージ。 A flat substrate having a light emitting element mounting portion on the upper surface, and a gold plating layer and a silver plating layer sequentially deposited on the inner peripheral surface joined to the upper surface of the substrate so as to surround the mounting portion. a frame body having a light-reflecting layer, derived on the side surface or the lower surface from the upper surface of the substrate, a wiring conductor gold plating layer is formed on the exposed surface, which is electrically connected to the wiring conductor, the wiring A first plating conductor for forming the gold plating layer on the surface of the conductor, and the first plating conductor is insulated and electrically connected to the light reflecting layer ; Comprising a second plating conductor for forming the gold plating layer and the silver plating layer on a peripheral surface ;
The base comprises a first substrate and a second substrate disposed on an upper surface of the first substrate;
The first plating conductor is located on the upper surface of the first substrate and the second plating conductor is located on the upper surface of the second substrate, and the first plating conductor and the second A light emitting element storing package, wherein the plating conductor is electrically insulated through the second substrate . 前記枠体の内周面に形成された金めっき層は、その厚みが０．２μｍ以上であることを特徴とする請求項１記載の発光素子収納用パッケージ。   The light-emitting element storage package according to claim 1, wherein the gold plating layer formed on the inner peripheral surface of the frame body has a thickness of 0.2 µm or more. 請求項１または請求項２記載の発光素子収納用パッケージの製造方法であって、前記第一のめっき用導体を介して、電解めっき法により、前記配線導体の露出した表面に金めっき層を被着する工程と、前記第二のめっき用導体を介して、電解めっき法により、前記枠体の内周面に金めっき層を被着する工程と、前記第二のめっき用導体を介して、電解めっき法により、前記枠体の内周面に形成された金めっき層上に前記銀めっき層を被着させる工程とを具備していることを特徴とする発光素子収納用パッケージの製造方法。 A claim 1 or claim 2 method of manufacturing a light-emitting element storage package according, through the first plating conductors, by electrolytic plating, gold plating on the exposed front surface of the wiring conductor A step of depositing a layer, a step of depositing a gold plating layer on the inner peripheral surface of the frame body by electrolytic plating via the second plating conductor, and the second plating conductor. through it, collecting the solution plating, for housing a light-emitting element package, characterized in that it the silver plating layer on the frame inner peripheral surface formed gold plating layer on; and a step of depositing Manufacturing method. 請求項１または請求項２記載の発光素子収納用パッケージと、前記搭載部に搭載されるとともに前記配線導体に電気的に接続された発光素子と、該発光素子を覆う透光性部材とを具備していることを特徴とする発光装置。   The light emitting element storage package according to claim 1, a light emitting element mounted on the mounting portion and electrically connected to the wiring conductor, and a translucent member covering the light emitting element. A light emitting device characterized by that. 請求項４記載の発光装置を所定の配置となるように設置したことを特徴とする照明装置。   5. A lighting device, wherein the light emitting device according to claim 4 is installed in a predetermined arrangement.
JP2004130901A 2004-04-27 2004-04-27 Light emitting element storage package, method for manufacturing the same, light emitting device, and lighting device Expired - Fee Related JP4776175B2 (en)

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PCT/JP2005/006727 WO2005106973A1 (en) 2004-04-27 2005-03-30 Wiring board for light emitting element
US11/568,258 US20080043444A1 (en) 2004-04-27 2005-03-30 Wiring Board for Light-Emitting Element
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