JP4763061B2 - 物体、特に薄いディスクを洗浄する装置及び方法 - Google Patents
物体、特に薄いディスクを洗浄する装置及び方法 Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/02—Devices for holding articles during cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Optical Record Carriers (AREA)
Description
定 義
動作原理:
洗浄処理は、以下のように行われる:
2 担持装置
3 ガラス板
4 装着要素
5 一辺
6 ウェハ
7 空隙
8 補助装置
9 手段
10 収容装置
11 ロッド
12 装置
13 ハウジング
14 槽
15 シャワー装置
16 シャワー要素
17 交差流装置
18 超音波装置
19 超音波源
20 底
21 流体の流れ
Claims (15)
- 複数の薄いウェハ(6)を洗浄する装置で、ウェハ(6)が各々の一辺で担持装置(2)に固定されており、2つの隣接するウェハ(6)間に空隙(7)が形成されており、
− 流体を各空隙(7)内に注入するシャワー装置(15)、及び
− 流体を満たすことができ且つ担持装置(2)を収容できる寸法を有する槽(14)から実質上構成された装置において、
前記シャワー装置は、前記槽が流体で満たされない時に流体を2つの隣接するウェハ間の各空隙内に注入し、
前記槽内には、前記槽が流体で満たされたときに超音波洗浄処理を実施する超音波装置が配置されており、
前記シャワー装置(15)は2パーツ設計で複数のノズルを有する少なくとも1つのシャワー要素(16)を備え、両パーツが前記槽(14)の長軸と平行に延び且つそれぞれの流れ方向が反対方向となるように、それぞれの各パーツが前記槽の長辺に対し横向きに配置されており、前記シャワー装置は、前記超音波装置による前記超音波洗浄処理では前記槽内に流体の流れを発生させ、流体の流れが2つの隣接するウェハ間の各空隙内へ差し向けられることによって、超音波で緩んだ粒子を洗い流し、前記少なくとも1つのシャワー要素(16)の両パーツは、前記超音波洗浄処理において正面対向するノズルが同時に作動されないように制御可能であることを特徴とする装置。 - 前記ノズルは少なくとも1つのノズルを介して相互に機能的に接続され、同じ流体量が供給可能であることを特徴とする請求の範囲第1項に記載の装置。
- 前記少なくとも1つのシャワー要素(16)は両側において幾つかの区分に分割されており、複数区分の各々が1つのノズルバーを有することを特徴とする請求の範囲第1または2項に記載の装置。
- 前記シャワー要素(16)の両パーツの位置は(必要なら相互に別々に)調整可能であることを特徴とする請求の範囲第1から3項のいずれかに記載の装置。
- 前記シャワー装置(15)が移動不能な担持装置(2)に対して移動可能であるか、あるいは前記担持装置(2)が移動不能なシャワー装置(15)に対して移動可能であるか、あるいは前記担持装置(2)と前記シャワー装置(15)が相対的に移動可能であることを特徴とする前記請求の範囲第1項から4項のいずれかに記載の装置。
- 前記超音波装置(18)は少なくとも1つ設けられ、前記槽(14)内に任意選択的に移動不能あるいは移動可能に配置されていることを特徴とする前記請求の範囲第1項から5項のいずれかに記載の装置。
- 幾つかのシャワー要素(16)が前記槽(14)の深さに対して異なるレベルに配置されていることを特徴とする前記請求の範囲第1項から6項のいずれかに記載の装置。
- 少なくとも1つのシャワー要素(16)が前記槽(14)内に垂直方向に調整可能であることを特徴とする前記請求の範囲第1項から7項のいずれかに記載の装置。
- 前記超音波装置(18)は、前記担持装置(2)の水平の向きに対して傾斜配置された複数の超音波源(19)を備えることを特徴とする請求の範囲第6から8項のいずれかに記載の装置。
- 薄いウェハ(6)が各々の一辺で担持装置(2)に固定されており、2つの隣接するウェハ(6)間に空隙(7)が形成された装置を用いてウェハ(6)を洗浄する方法で、前記装置が流体を各空隙(7)内に注入するシャワー装置(15)と、流体を満たすことができ且つ担持装置(2)を収容できる寸法を有する槽(14)から実質上構成されており、
前記シャワー装置(15)は2パーツ設計で複数のノズルを有する少なくとも1つのシャワー要素(16)を備え、両パーツが前記槽(14)の長軸と平行に延び且つそれぞれの流れ方向が反対方向となるように、各パーツが前記槽の長辺に対し横向きに配置されているものにおいて、
a)基板ブロック(1)を含む前記担持装置(2)を、空のあるいは部分的に満たされた前記槽(14)内に挿入する処理ステップ、
b)前記シャワー装置(15)によって洗浄処理を実施するシャワー処理ステップ、及び
c)前記槽が流体で満たされたときに前記槽内に配置された超音波装置(18)によって洗浄処理を実施する超音波洗浄処理ステップ、
を備え、
前記シャワー処理ステップは、前記槽が流体で満たされない時に、前記シャワー装置が流体を2つの隣接するウェハ間の各空隙内に注入するステップであり、
前記超音波装置による前記超音波洗浄処理ステップでは、前記シャワー装置は、槽内に流体の流れを発生させ、流体の流れが2つの隣接するウェハ間の各空隙内へ差し向けられることによって、超音波で緩んだ粒子を洗い流し、前記少なくとも1つのシャワー要素(16)の両パーツは、前記超音波洗浄処理ステップにおいて正面対向するノズルが同時に作動されないように制御可能であることを特徴とする方法。 - 前記シャワー処理ステップb)は前記超音波洗浄処理ステップc)の前後に行われることを特徴とする請求の範囲第10項に記載の方法。
- 前記シャワー処理ステップb)及び前記超音波洗浄処理ステップc)は逐次数回行われることを特徴とする請求の範囲第10項に記載の方法。
- 前記シャワー処理ステップb)は温流体を用いて行われることを特徴とする請求の範囲第10から12項のいずれかに記載の方法。
- 前記超音波洗浄処理ステップc)は冷流体を用いて行われることを特徴とする請求の範囲第10から13項のいずれかに記載の方法。
- 最後の洗浄処理は、冷流体を用いたシャワー装置(15)によって洗浄処理を行うことを含むことを特徴とする請求の範囲第10から14項のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102006059810.5 | 2006-12-15 | ||
DE102006059810A DE102006059810A1 (de) | 2006-12-15 | 2006-12-15 | Vorrichtung und Verfahren zum Reinigen von Gegenständen, insbesondere von dünnen Scheiben |
PCT/EP2007/010734 WO2008071364A1 (de) | 2006-12-15 | 2007-12-10 | Vorrichtung und verfahren zum reinigen von gegenständen, insbesondere von dünnen scheiben |
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JP2009529781A JP2009529781A (ja) | 2009-08-20 |
JP4763061B2 true JP4763061B2 (ja) | 2011-08-31 |
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US (1) | US20080295860A1 (ja) |
EP (1) | EP2102896B1 (ja) |
JP (1) | JP4763061B2 (ja) |
KR (2) | KR20080089629A (ja) |
CN (2) | CN101361166B (ja) |
AT (1) | ATE519221T1 (ja) |
DE (2) | DE102006059810A1 (ja) |
DK (1) | DK2102896T3 (ja) |
ES (1) | ES2371117T3 (ja) |
NO (1) | NO20082527L (ja) |
RU (1) | RU2390391C2 (ja) |
TW (2) | TWI344868B (ja) |
UA (1) | UA92773C2 (ja) |
WO (2) | WO2008071364A1 (ja) |
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KR101932410B1 (ko) | 2015-08-18 | 2018-12-31 | 주식회사 엘지화학 | 일체형 세척 및 건조 장치 |
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EP2218004B1 (de) * | 2007-12-10 | 2012-02-15 | RENA GmbH | Vorrichtung und verfahren zum reinigen von gegenständen |
DE102008004548A1 (de) * | 2008-01-15 | 2009-07-16 | Rec Scan Wafer As | Waferstapelreinigung |
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DE102008053596A1 (de) | 2008-10-15 | 2010-04-22 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Reinigung eines Waferblocks sowie Trägereinrichtung für einen Waferblock |
DE102008053597A1 (de) | 2008-10-15 | 2010-04-22 | Gebr. Schmid Gmbh & Co. | Reinigungsvorrichtung für einen Waferblock |
DE102008053598A1 (de) * | 2008-10-15 | 2010-04-22 | Gebr. Schmid Gmbh & Co. | Verfahren zum Lösen von Wafern von einem Waferträger und Vorrichtung dafür |
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EP2415070A4 (en) * | 2009-04-01 | 2012-09-26 | Cabot Microelectronics Corp | SELF-CLEANING WIRE SAW TYPE APPARATUS AND METHOD |
DE102009035343A1 (de) * | 2009-07-23 | 2011-01-27 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Reinigung von Substraten an einem Träger |
DE102009035342A1 (de) * | 2009-07-23 | 2011-01-27 | Gebr. Schmid Gmbh & Co. | Vorrichtung und Verfahren zur Reinigung von Substraten an einem Träger |
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EP2102896A1 (de) | 2009-09-23 |
TWI344868B (en) | 2011-07-11 |
NO20082527L (no) | 2009-09-10 |
CN101361167A (zh) | 2009-02-04 |
TW200941617A (en) | 2009-10-01 |
WO2008071365A1 (de) | 2008-06-19 |
CN101361166A (zh) | 2009-02-04 |
WO2008071364A1 (de) | 2008-06-19 |
RU2390391C2 (ru) | 2010-05-27 |
US20080295860A1 (en) | 2008-12-04 |
DK2102896T3 (da) | 2011-11-21 |
DE202006020339U1 (de) | 2008-04-10 |
TWI447832B (zh) | 2014-08-01 |
DE102006059810A1 (de) | 2008-06-19 |
CN101361166B (zh) | 2010-06-23 |
KR20080069676A (ko) | 2008-07-28 |
UA92773C2 (ru) | 2010-12-10 |
ATE519221T1 (de) | 2011-08-15 |
EP2102896B1 (de) | 2011-08-03 |
TW200848171A (en) | 2008-12-16 |
JP2009529781A (ja) | 2009-08-20 |
RU2008130519A (ru) | 2010-01-27 |
KR20080089629A (ko) | 2008-10-07 |
ES2371117T3 (es) | 2011-12-27 |
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