JP4761713B2 - Electronic component sealing substrate, multi-component electronic component sealing substrate, and method of manufacturing electronic device - Google Patents

Electronic component sealing substrate, multi-component electronic component sealing substrate, and method of manufacturing electronic device Download PDF

Info

Publication number
JP4761713B2
JP4761713B2 JP2004020586A JP2004020586A JP4761713B2 JP 4761713 B2 JP4761713 B2 JP 4761713B2 JP 2004020586 A JP2004020586 A JP 2004020586A JP 2004020586 A JP2004020586 A JP 2004020586A JP 4761713 B2 JP4761713 B2 JP 4761713B2
Authority
JP
Japan
Prior art keywords
main surface
electronic component
substrate
insulating substrate
frame member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004020586A
Other languages
Japanese (ja)
Other versions
JP2005212017A (en
Inventor
克亨 吉田
格 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2004020586A priority Critical patent/JP4761713B2/en
Publication of JP2005212017A publication Critical patent/JP2005212017A/en
Application granted granted Critical
Publication of JP4761713B2 publication Critical patent/JP4761713B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Description

本発明は、半導体基板の主面に、微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品領域を形成して成る電子部品を封止するための電子部品封止用基板、およびそれを用いて電子部品の微小電子機械機構を封止することにより形成される電子装置の製造方法に関するものである。   The present invention provides an electronic component sealing method for sealing an electronic component formed by forming an electronic component region formed by forming a microelectromechanical mechanism and an electrode electrically connected to the main surface of a semiconductor substrate. The present invention relates to a manufacturing substrate and a method for manufacturing an electronic device formed by sealing a microelectromechanical mechanism of an electronic component using the substrate.

近年、シリコンウェーハ等の半導体基板の主面に、半導体集積回路素子等の微細配線を形成する加工技術を応用して、極めて微小な電子機械機構、いわゆるＭＥＭＳ（Ｍｉｃｒｏ Ｅｌｅｃｔｒｏｍｅｃｈａｎｉｃａｌ Ｓｙｓｔｅｍ）を形成した電子部品が注目され、実用化に向けて開発が進められている。   2. Description of the Related Art In recent years, an electronic component in which a very small electromechanical mechanism, a so-called MEMS (Micro Electromechanical System), is formed by applying a processing technique for forming fine wiring such as a semiconductor integrated circuit element on a main surface of a semiconductor substrate such as a silicon wafer. Has been attracting attention, and is being developed for practical use.

このような微小電子機械機構としては、加速度計、圧力センサ、アクチュエータ等のセンサや、微細な鏡面体を可動式に形成したマイクロミラーデバイス、光デバイス、あるいはマイクロポンプ等を組み込んだマイクロ化学システム等、非常に広い分野にわたるものが試作、開発されている。   Such microelectromechanical mechanisms include sensors such as accelerometers, pressure sensors, and actuators, micromirror devices with movable micromirrors, optical devices, microchemical systems incorporating micropumps, etc. Prototypes have been developed and developed over a very wide field.

そのような微小電子機械機構を形成した電子部品を用いて電子装置を構成するための従来の電子部品封止用基板およびそれを用いて成る電子装置の一例を図４に断面図で示す。図４に示す例では、微小電子機械機構２２が形成された半導体基板２１の主面には、微小電子機械機構２２に電力を供給したり、微小電子機械機構２２から外部の電気回路に電気信号を送り出したりするための電極２３が微小電子機械機構２２と電気的に接続されて形成されており、これら半導体基板２１、微小電子機械機構２２および電極２３により、１つの電子部品２４が構成される。   FIG. 4 is a cross-sectional view of an example of a conventional electronic component sealing substrate for configuring an electronic device using an electronic component having such a micro-electromechanical mechanism and an electronic device using the same. In the example shown in FIG. 4, power is supplied to the main surface of the semiconductor substrate 21 on which the micro electro mechanical mechanism 22 is formed, or an electric signal is transmitted from the micro electro mechanical mechanism 22 to an external electric circuit. Is formed by being electrically connected to the micro electro mechanical mechanism 22, and the semiconductor substrate 21, the micro electro mechanical mechanism 22, and the electrode 23 constitute one electronic component 24. .

なお、このような電子部品２４は、通常、半導体基板２１の主面に多数個が縦横に配列形成された多数個取りの形態で形成した後、個々の半導体基板２１に切断することにより製作されるので、この切断の際に切削粉等の異物が微小電子機械機構２２に付着して作動の妨げになることを防止するために、ガラス板２５等で覆われて保護されている。   Such an electronic component 24 is usually manufactured by forming a multi-chip form in which a large number are arranged on the main surface of the semiconductor substrate 21 vertically and horizontally, and then cutting into individual semiconductor substrates 21. Therefore, in order to prevent foreign matter such as cutting powder from adhering to the microelectromechanical mechanism 22 during this cutting and hindering the operation, the glass plate 25 is covered and protected.

そして、この電子部品２４を、電子部品収納用の凹部Ａを有するパッケージ３１の凹部Ａ内に収納するとともに、電子部品２４の電極２３をパッケージ３１の電極パッド３２にボンディングワイヤ３３等の導電性接続材を介して接続した後、パッケージ３１の凹部Ａを蓋体３４で覆って電子部品２４を凹部Ａ内に気密封止することにより、電子装置として完成する。この場合、電子部品２４は、微小電子機械機構２２の動作を妨げないようにするため、中空状態で気密封止する必要がある。   The electronic component 24 is accommodated in the recess A of the package 31 having the recess A for storing the electronic component, and the electrode 23 of the electronic component 24 is electrically connected to the electrode pad 32 of the package 31 such as a bonding wire 33. After the connection via the material, the recess A of the package 31 is covered with the lid 34 and the electronic component 24 is hermetically sealed in the recess A, thereby completing the electronic device. In this case, the electronic component 24 needs to be hermetically sealed in a hollow state so as not to hinder the operation of the microelectromechanical mechanism 22.

この電子装置について、あらかじめパッケージ３１の電極パッド３２から外表面に導出するようにして形成しておいた配線導体３５の導出部分を外部電気回路に接続することにより、気密封止された微小電子機械機構２２が、電極２３、ボンディングワイヤ３３、電極パッド３２および配線導体３５を介して外部の電気回路と電気的に接続される。   With respect to this electronic device, a lead-out portion of the wiring conductor 35 formed so as to lead out from the electrode pad 32 of the package 31 to the outer surface in advance is connected to an external electric circuit, so that the microelectronic machine is hermetically sealed. The mechanism 22 is electrically connected to an external electric circuit through the electrode 23, the bonding wire 33, the electrode pad 32, and the wiring conductor 35.

また、このような電子部品２４は、通常、広面積の半導体基板の主面に多数個を縦横に配列形成させることにより製作されており、この場合の電子装置の製造方法は、従来、以下のようなものであった。   In addition, such an electronic component 24 is usually manufactured by arranging a large number of elements vertically and horizontally on the main surface of a large-area semiconductor substrate. In this case, a method for manufacturing an electronic device is conventionally as follows. It was something like that.

すなわち、（１）半導体基板の主面に、微小電子機械機構２２およびこれに電気的に接続された電極２３が形成されて成る電子部品領域を多数個、縦横に配列形成した電子部品を準備する工程と、（２）各電子部品の微小電子機械機構２２を、その周囲が中空状態となるようにして、ガラス板２５等で覆って封止する工程と、（３）半導体基板にダイシング加工等の切断加工を施して、個々の電子部品２４に分割する工程と、（４）個々の電子部品２４を、電子部品収納用パッケージ３１内に気密封止する工程と、により製作され。   That is, (1) An electronic component is prepared in which a large number of electronic component regions each having a micro-electromechanical mechanism 22 and an electrode 23 electrically connected thereto are formed on the main surface of a semiconductor substrate. A step, (2) a step of encapsulating the micro-electromechanical mechanism 22 of each electronic component with a glass plate 25 or the like so that the periphery thereof is in a hollow state, and (3) dicing or the like on the semiconductor substrate Are cut into individual electronic components 24, and (4) the individual electronic components 24 are hermetically sealed in the electronic component storage package 31.

このような従来の製造方法においては、半導体基板の主面に配列形成された多数の電子部品領域の１個ずつをガラス板２５等で封止して保護しておく必要があること、また、一旦ガラス板２５で封止した電子部品２４を、個々の電子部品２４に分割した後、改めてパッケージ３１内に気密封止するとともに、その電極２３をパッケージ３１の電極パッド３２等に接続して外部接続させる必要があること等のため、生産性が悪く、実用化が難しいという問題があった。   In such a conventional manufacturing method, it is necessary to seal and protect each one of a large number of electronic component regions arranged on the main surface of the semiconductor substrate with a glass plate 25 or the like, After the electronic component 24 once sealed with the glass plate 25 is divided into individual electronic components 24, the electronic component 24 is hermetically sealed in the package 31 and the electrode 23 is connected to the electrode pad 32 of the package 31 and the like. Due to the necessity of connection, there was a problem that productivity was poor and practical application was difficult.

この問題に対し、半導体基板の主面に配列形成された多数個の機構微小電子機械２２を一括して覆い、封止するような基板が提案されている。このような封止用の基板としては、半導体基板や導電性の金属板等から成るもの等が知られている。   In order to solve this problem, a substrate has been proposed in which a large number of mechanical microelectronic machines 22 arrayed on the main surface of a semiconductor substrate are collectively covered and sealed. As such a sealing substrate, a substrate made of a semiconductor substrate, a conductive metal plate, or the like is known.

封止用の基板が半導体基板から成る場合、例えば、主面に多数個の電子部品領域が配列形成された第１の半導体基板とは別に、この電子部品領域の配列に対応させて多数の凹部を配列形成した封止用の第２の半導体基板を準備し、第１の半導体基板の主面上に第２の半導体基板を、第２の半導体基板の凹部が第１の半導体基板の電子部品領域を覆うようにして接合し、第２の半導体基板に内側に第１の半導体基板の電子部品領域（特に微小電子機械機構）を封止するようにした技術が提案されている（例えば、特許文献１参照）。   In the case where the sealing substrate is made of a semiconductor substrate, for example, apart from the first semiconductor substrate in which a large number of electronic component regions are arranged and formed on the main surface, a large number of recesses corresponding to the arrangement of the electronic component regions. A second semiconductor substrate for sealing, in which the first semiconductor substrate is arranged, the second semiconductor substrate is disposed on the main surface of the first semiconductor substrate, and the concave portion of the second semiconductor substrate is an electronic component of the first semiconductor substrate. A technique has been proposed in which an electronic component region (especially a micro-electromechanical mechanism) of a first semiconductor substrate is sealed inside a second semiconductor substrate so as to cover the region (for example, a patent) Reference 1).

また、封止用の基板が導電性を有する金属板から成る場合、導電性を有するカバー用の金属板に所定パターンの溝を形成するとともに、この溝をガラスやセラミック材料で充填して平坦化させた後、その上にボンディング用の導体パターン（電極パッド等）を形成し、この導体パターンに電子部品の電極を接続するとともに金属板を半導体基板の主面に接合し、その後、電子部品領域をセラミックやガラス等で封着するとともに、導体パターンを外部に導出するための外部配線用電極パターンを形成するようにした技術が提案されている（例えば、特許文献２参照。）。
特開２００１−１４４１１７号公報 特開２００２−４３４６３号公報 In addition, when the sealing substrate is made of a conductive metal plate, a groove having a predetermined pattern is formed in the conductive metal plate for the cover, and the groove is filled with glass or a ceramic material to be flattened. After that, a conductor pattern for bonding (electrode pad, etc.) is formed thereon, an electrode of an electronic component is connected to this conductor pattern, and a metal plate is bonded to the main surface of the semiconductor substrate, and then an electronic component region Has been proposed in which an electrode pattern for external wiring for leading a conductor pattern to the outside is formed (see, for example, Patent Document 2).
JP 2001-144117 A JP 2002-43463 A

しかしながら、このような従来の封止用基板を用いて半導体基板の主面の電子部品領域を封止する場合は、多数個の電子部品領域を一括して封止することはできるものの、例えば、半導体を材料とした封止用の基板の場合であれば、基板の内部に３次元的に配線導体を形成することができないため、封止用の（第２の）半導体基板の、電子部品領域が配列形成された（第１の）半導体基板に接合される主面から対向する他方主面にかけて配線導体を導出することができず、電子部品の電極は、第１の半導体基板の主面に形成された電極の一部を封止部の外側に延出させるとともに、この延出部をボンディングワイヤを介して電子部品収納用パッケージの電極パッドや外部の電気回路に接続する必要があり、実装工程（電子部品領域の封止から電子装置として完成させて外部電気回路に接続するまでの工程）が長く、また、個々の電子装置のサイズが大きくなってしまうという問題がある。また、電子装置を組み込んだ電子システムの小型化に有利な表面実装ができないという問題もある。   However, when the electronic component region on the main surface of the semiconductor substrate is sealed using such a conventional sealing substrate, a large number of electronic component regions can be collectively sealed, for example, In the case of a sealing substrate made of a semiconductor material, wiring conductors cannot be three-dimensionally formed inside the substrate, so the electronic component region of the sealing (second) semiconductor substrate The wiring conductor cannot be led out from the main surface bonded to the (first) semiconductor substrate on which the first electrode is arranged to the other main surface opposite to the main surface, and the electrode of the electronic component is connected to the main surface of the first semiconductor substrate. It is necessary to extend a part of the formed electrode to the outside of the sealing part, and to connect this extended part to the electrode pad of the electronic component storage package or an external electric circuit via a bonding wire. Process (from sealing of electronic component area Complete as a child apparatus to the process) is longer connected to an external electric circuit, also, there is a problem that the size of individual electronic devices increases. In addition, there is a problem that surface mounting that is advantageous for miniaturization of an electronic system incorporating an electronic device cannot be performed.

また、導電性の金属板等から成る封止用の基板の場合であれば、金属板に電極パッド等の導体パターンを形成することができるように、一旦ガラスやセラミックスで金属板の表面に形成した溝等を埋めて絶縁部を形成したり、その絶縁部の表面に、実装工程の途中で導体部を形成したりする必要があるため、この場合も、電子部品の実装工程を短くすることが困難であるという問題がある。   In the case of a sealing substrate made of a conductive metal plate, etc., once formed on the surface of the metal plate with glass or ceramics so that a conductor pattern such as an electrode pad can be formed on the metal plate. In this case, too, it is necessary to shorten the mounting process of the electronic component because it is necessary to form an insulating part by filling the groove or the like, or to form a conductor part on the surface of the insulating part during the mounting process. There is a problem that is difficult.

さらに、微小電子機械機構（ＭＥＭＳ：Ｍｉｃｒｏ Ｅｌｅｃｔｒｏｍｅｃｈａｎｉｃａｌ Ｓｙｓｔｅｍ）を形成した電子部品においては、近年、低電圧駆動かつ高速化が行われるようになってきており、電子部品の外部から侵入する高調波ノイズの影響を受けやすく、配線導体を伝わり外部より伝播してきた高周波ノイズにより電気特性の変化やＭＥＭＳ領域の破壊などが起こるとともに、配線導体を伝播する信号に含まれる高調波ノイズが電子部品の外部に放出され易いものとなってきていることから、電子部品の外部近接位置にノイズ発生源があると絶縁基板に被着形成された配線導体を伝播する信号に電磁波ノイズが入り込み、微小電子機械機構に伝播されて誤動作させてしまったり、また電子部品の駆動部を破壊してしまったり、あるいは電子部品の外部近傍位置に電磁波ノイズに対して影響を受け易い電子機器等があると電子部品より放出された電磁波ノイズがこの電子機器等に悪影響を及ぼすという問題があった。   Furthermore, in recent years, electronic components that have formed a micro electro mechanical system (MEMS) have been driven at low voltage and speeded up, and harmonic noise that enters from outside the electronic components has been increased. High-frequency noise that is easily affected and propagated from the outside through the wiring conductor causes changes in electrical characteristics and destruction of the MEMS area, and harmonic noise contained in the signal propagating through the wiring conductor is emitted to the outside of the electronic component. Therefore, if there is a noise source near the outside of the electronic component, electromagnetic noise enters the signal that propagates through the wiring conductor deposited on the insulating substrate and propagates to the microelectromechanical mechanism. Malfunctioning, or destroying the drive part of the electronic component, Alternatively, if there is an electronic device or the like that is easily affected by electromagnetic noise at a position near the outside of the electronic component, there is a problem that the electromagnetic noise emitted from the electronic component has an adverse effect on the electronic device or the like.

また、高周波ノイズの影響を低減するためにローパスフィルタをＭＥＭＳの近傍に実装したり、プリント板に導体パターンを用いてローパスフィルタを作製するなどの手法が取られており、実装面積が大きくなるという問題点があった。   In addition, in order to reduce the influence of high-frequency noise, a method such as mounting a low-pass filter in the vicinity of the MEMS or manufacturing a low-pass filter using a conductor pattern on a printed board is taken, which increases the mounting area. There was a problem.

本発明は、上記従来の技術における問題点に鑑みて完成されたものであり、その目的は、半導体基板の主面に形成された微小電子機械機構を容易かつ確実に封止することができるとともに、この微小電子機械機構と接続された半導体基板の主面に形成されている電極を容易かつ確実に、例えば表面実装が可能な形態で外部接続させることができ、かつ微小電子機械機構を形成した電子部品の外部から侵入する高調波ノイズの影響を受けにくいとともに、配線導体を伝播する信号に含まれる高調波ノイズが電子部品の外部に放出されにくい電子部品封止用基板を提供することにある。   The present invention has been completed in view of the above problems in the prior art, and its purpose is to easily and reliably seal a microelectromechanical mechanism formed on the main surface of a semiconductor substrate. The electrode formed on the main surface of the semiconductor substrate connected to the microelectromechanical mechanism can be easily and reliably externally connected, for example, in a form capable of surface mounting, and the microelectromechanical mechanism is formed. To provide an electronic component sealing substrate that is not easily affected by harmonic noise that enters from the outside of an electronic component, and that harmonic noise contained in a signal propagating through a wiring conductor is less likely to be emitted to the outside of the electronic component. .

また、本発明の他の目的は、このような微小電子機械機構および電極から成る電子部品領域が半導体基板の主面に多数個縦横に配列形成されていたとしても、これらを容易かつ確実に封止することが可能な封止用基板を提供するとともに、このような封止用基板を用いて、微小電子機械機構が封止されて成る多数個の電子装置を、例えば表面実装が可能な形態で一括して形成することが可能な電子装置の製造方法を提供することにある。   Another object of the present invention is to easily and surely seal even if a large number of electronic component regions composed of such micro-electromechanical mechanisms and electrodes are arranged vertically and horizontally on the main surface of the semiconductor substrate. The present invention provides a sealing substrate that can be stopped, and uses such a sealing substrate to form a large number of electronic devices in which a microelectromechanical mechanism is sealed, for example, in a surface mountable form. It is an object of the present invention to provide a method of manufacturing an electronic device that can be collectively formed.

本発明の電子部品封止用基板は、一方主面から他方主面または側面に導出された複数の配線導体が形成され、前記一方主面に凹部が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記絶縁基板の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、前記配線導体は高周波信号が伝送されるものを含み、前記ローパスフィルタは前記高周波信号が伝送される配線導体に直列に接続されており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の前記電極を前記接続端子に接合し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記絶縁基板の前記微小電子機械機構に対向する部位に凹部が形成されているとともに、前記枠部材の内側に前記電子部品の前記微小電子機械機構を気密封止することを特徴とするものである。
The electronic component sealing substrate of the present invention includes an insulating substrate in which a plurality of wiring conductors led from one main surface to the other main surface or side surfaces are formed, and a concave portion is formed on the one main surface ; said one formed on the main surface, the wiring conductor and electrically connected to connection pads, and the previous SL said one joined so as to surround the connection pads on the major surface frame member of the insulating substrate, the connection A connection terminal formed on the pad and having the same height as the frame member, and a low-pass filter made of a conductor pattern formed inside or on the surface of the insulating substrate, and the wiring conductor transmits a high-frequency signal. The low-pass filter is connected in series to a wiring conductor through which the high-frequency signal is transmitted, and a microelectromechanical mechanism and an electrode electrically connected thereto are formed on the main surface of the semiconductor substrate. The electrode of the electronic component joined to the connection terminals that, by joining the main surface of the semiconductor substrate to the main surface of the frame member, the concave portion facing the micro electronic mechanical system of said insulating substrate The micro electro mechanical mechanism of the electronic component is hermetically sealed inside the frame member.

また、本発明の電子部品封止用基板は、上記構成において好ましくは、前記ローパスフィルタは、π型に接続されたコンデンサおよびインダクタ回路から成ることを特徴とするものである。   In the electronic component sealing substrate according to the present invention, preferably, the low-pass filter includes a π-type capacitor and an inductor circuit.

また、本発明の電子部品封止用基板は、上記構成において好ましくは、前記絶縁基板は平面視形状が四角形であり、前記コンデンサは、前記枠部材よりも内側に、平面視で前記絶縁基板の対向する２辺の中心を通る直線または対角線に対して線対称に形成されていることを特徴とするものである。   In the electronic component sealing substrate according to the present invention, preferably, the insulating substrate has a quadrangular shape in plan view, and the capacitor is disposed on the inner side of the frame member and in plan view. It is characterized by being formed symmetrically with respect to a straight line or diagonal line passing through the centers of two opposing sides.

また、本発明の電子部品封止用基板は、上記構成において好ましくは、前記ローパスフィルタは、直線状の前記導体パターンと、前記導体パターンに形成された複数の突出部とから構成されていることを特徴とするものである。   In the electronic component sealing substrate according to the present invention, preferably, the low-pass filter includes the linear conductor pattern and a plurality of protrusions formed in the conductor pattern. It is characterized by.

また、本発明の電子部品封止用基板は、上記構成において好ましくは、前記接続パッドおよび前記接続端子が内側に形成された前記枠部材が多数個縦横に配列形成されていることを特徴とするものである。   In the electronic component sealing substrate according to the present invention, preferably, in the above configuration, a plurality of the frame members each having the connection pads and the connection terminals formed therein are arranged vertically and horizontally. Is.

また、本発明の電子装置の製造方法は、半導体基板の主面に、微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品領域を多数個縦横に配列形成した電子部品を準備する工程と、一方主面から他方主面または側面に導出された複数の配線導体が形成され、前記一方主面に凹部が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記絶縁基板の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、前記配線導体は高周波信号が伝送されるものを含み、前記ローパスフィルタは前記高周波信号が伝送される配線導体に直列に接続された電子部品封止領域を多数個、前記電子部品の前記電子部品領域に対応させて配列形成した電子部品封止用基板を準備する工程と、前記電子部品の前記電極を前記接続端子に接合するとともに、前記半導体基板の前記主面に形成されている前記微小電子機械機構に対向するように前記絶縁基板の前記一方主面に形成されている前記凹部を配置し、前記微小電子機械機構の周囲の前記半導体基板の前記主面を前記枠部材の主面に接合して、前記微小電子機械機構を前記枠部材の内側に気密封止する工程と、互いに接合された前記電子部品および前記電子部品封止用基板を前記電子部品封止領域毎に分割して、前記電子部品封止領域に前記電子部品領域が接合されて成る個々の電子装置を得る工程とを具備することを特徴とするものである。
The electronic device manufacturing method according to the present invention also provides an electronic device in which a plurality of electronic component regions formed by forming a microelectromechanical mechanism and electrodes electrically connected to the main surface of a semiconductor substrate are arranged vertically and horizontally. A step of preparing a component ; an insulating substrate in which a plurality of wiring conductors led out from one main surface to the other main surface or side surface are formed; and a concave portion is formed on the one main surface; and the one main surface of the insulating substrate formed, and connection pads the wired conductor electrically connected, before Symbol said one frame is joined so as to surround the connection pads on the major surface member of the insulating substrate, formed on the connection pad A connection terminal having the same height as the frame member, and a low-pass filter composed of a conductor pattern formed inside or on the surface of the insulating substrate, wherein the wiring conductor includes one that transmits a high-frequency signal, Above The pass filter prepares an electronic component sealing substrate in which a large number of electronic component sealing regions connected in series to the wiring conductor through which the high-frequency signal is transmitted are arranged in correspondence with the electronic component regions of the electronic component. A step of bonding the electrode of the electronic component to the connection terminal and forming the electrode on the one main surface of the insulating substrate so as to face the microelectromechanical mechanism formed on the main surface of the semiconductor substrate; by the recess is arranged that, air by bonding the main surface of the semiconductor substrate around the micro electronic mechanical system on the main surface of the frame member, the front Symbol micro electronic mechanical system inside the frame member A step of hermetically sealing, and the electronic component and the electronic component sealing substrate bonded to each other are divided for each electronic component sealing region, and the electronic component region is bonded to the electronic component sealing region; It is characterized in that it comprises the step of obtaining the electronic device s.

本発明の電子部品封止用基板によれば、一方主面から他方主面または側面に導出された複数の配線導体が形成され、一方主面に凹部が形成された絶縁基板と、絶縁基板の一方主面に形成された、配線導体と電気的に接続された接続パッドと、絶縁基板の一方主面に接続パッドを取り囲むようにして接合された枠部材と、接続パッド上に形成された、枠部材と同じ高さの接続端子と、絶縁基板の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、配線導体は高周波信号が伝送されるものを含み、ローパスフィルタは高周波信号が伝送される配線導体に直列に接続されており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の電極を接続端子に接合し、半導体基板の主面を枠部材の主面に接合することによって、絶縁基板の微小電子機械機構に対向する部位に凹部が形成されているとともに、枠部材の内側に電子部品の微小電子機械機構を気密封止するようにしたことから、枠部材の主面を半導体基板の主面に接合させるだけで、電子部品の微小電子機械機構を、枠部材と絶縁基板とにより容易かつ確実に封止することができる。
According to the electronic component sealing substrate of the present invention, an insulating substrate in which a plurality of wiring conductors led from one main surface to the other main surface or side surface are formed, and a concave portion is formed on one main surface ; on the other hand formed on the main surface, a wiring conductor electrically connected to connection pads, and a frame member joined so as to surround the connection pads on one main surface of the insulated substrate, which is formed on the connection pad and a connection terminal having the same height as the frame member composed of a low-pass filter composed of a conductor pattern formed inside or on the surface of the insulating substrate, wiring conductors include those high-frequency signal is transmitted, b-pass filter high are connected in series to the wiring conductor-frequency signal is transmitted, contact the electronic components of electrodes comprising a main surface micro electronic mechanical system and which electrically connected to the electrodes of the semiconductor substrate is formed connection terminals It joined to a semi-conductor By joining the main surfaces of the plate to the main surface of the frame member, with the recess is formed at a portion opposed to the micro electronic mechanical system of insulated substrate, infinitesimal electromechanical inside the electronic components of the frame member Since the mechanism is hermetically sealed, the microelectromechanical mechanism of the electronic component can be easily and reliably sealed between the frame member and the insulating substrate simply by joining the main surface of the frame member to the main surface of the semiconductor substrate. Can be stopped.

また、枠部材の主面の高さが、接続パッド上に形成された接続端子の高さと同じであるので、枠部材の主面を半導体基板の主面に接合するときに、半導体基板の主面に形成されている電極を接続端子に容易かつ確実に接続することができる。また、この接続端子から接続パッドおよび配線導体を介して、電子部品の電極を外部に導出することもできる。   In addition, since the height of the main surface of the frame member is the same as the height of the connection terminal formed on the connection pad, when the main surface of the frame member is joined to the main surface of the semiconductor substrate, the main surface of the semiconductor substrate. The electrode formed on the surface can be easily and reliably connected to the connection terminal. Moreover, the electrode of an electronic component can also be derived | led-out outside from this connection terminal via a connection pad and a wiring conductor.

また、絶縁基板の内部または表面には、導体パターンから成るローパスフィルタが形成されており、配線導体は高周波信号が伝送されるものを含み、ローパスフィルタは高周波信号が伝送される配線導体に直列に接続されていることから、駆動するＭＥＭＳが駆動中に外部より高周波ノイズが伝播してきても、駆動中のＭＥＭＳには高周波ノイズはローパスフィルタによって選択的にカットされＭＥＭＳに与える悪影響をより低減することができる。   In addition, a low-pass filter made of a conductor pattern is formed inside or on the surface of the insulating substrate. The wiring conductor includes one that transmits a high-frequency signal, and the low-pass filter is in series with the wiring conductor that transmits a high-frequency signal. Even if high-frequency noise propagates from the outside while the driving MEMS is driven, the high-frequency noise is selectively cut by the low-pass filter in the driving MEMS to further reduce the adverse effect on the MEMS. Can do.

また本発明において好ましくは、ローパスフィルタは、π型に接続されたコンデンサおよびインダクタ回路から形成されているため、ローパスフィルタの入出力部において、コンデンサ回路をほぼ対称に配置することができるため、絶縁基板作製時の反りを低減することができ、ＭＥＭＳを絶縁基板に実装した際の１次実装信頼性が向上する。   Preferably, in the present invention, since the low-pass filter is formed of a capacitor and an inductor circuit connected in a π-type, the capacitor circuit can be disposed almost symmetrically at the input / output portion of the low-pass filter, so that Warpage during substrate fabrication can be reduced, and primary mounting reliability when the MEMS is mounted on an insulating substrate is improved.

また本発明において好ましくは、絶縁基板は平面視形状が四角形であり、コンデンサは、枠部材よりも内側に、平面視で絶縁基板の対向する２辺の中心を通る直線または対角線に対して線対称に形成することにより、絶縁基板作製時の反りをさらに低減することができ、ＭＥＭＳと絶縁基板との接続信頼性がより向上する。   Preferably, in the present invention, the insulating substrate has a quadrangular shape in plan view, and the capacitor is line-symmetric with respect to a straight line or a diagonal line passing through the centers of two opposite sides of the insulating substrate in plan view, inside the frame member. By forming the insulating substrate, warpage during the production of the insulating substrate can be further reduced, and the connection reliability between the MEMS and the insulating substrate is further improved.

また本発明において好ましくは、ローパスフィルタは、絶縁基板の内部または表面に形成された直線状の導体パターンと、導体パターンに形成された複数の突出部とから構成されていることにより、自己共振周波数が高くなることから、更なる高周波帯での使用が可能になる。また、ローパスフィルタをより小型にして作製することができるので、絶縁基板作製時の反りを低減することができ、ＭＥＭＳを絶縁基板に実装した際の１次実装信頼性が向上する。その結果、信頼性の高い電子部品封止用基板を得ることができる。   In the present invention, it is preferable that the low-pass filter includes a linear conductor pattern formed inside or on the surface of the insulating substrate and a plurality of protrusions formed in the conductor pattern, so that a self-resonant frequency is obtained. Therefore, it becomes possible to use in a further high frequency band. In addition, since the low-pass filter can be manufactured with a smaller size, warpage during manufacturing of the insulating substrate can be reduced, and primary mounting reliability when the MEMS is mounted on the insulating substrate is improved. As a result, a highly reliable electronic component sealing substrate can be obtained.

また、本発明の電子部品封止用基板は、例えば、セラミック多層配線基板等の絶縁基板を用いて形成したものとすることにより、配線導体を、接続パッドや枠部材が形成、接合されている一方主面から他方主面や側面にかけて、基板の内部や表面に自由に形成して導出させることができ、この導出された端部に外部接続用の金属バンプを取着させること等により、容易に表面実装することが可能な電子装置として完成させることができる。   In addition, the electronic component sealing substrate of the present invention is formed by using an insulating substrate such as a ceramic multilayer wiring substrate, for example, so that the connection pads and the frame members are formed and bonded to the wiring conductor. From one main surface to the other main surface or side surface, it can be freely formed on the inside or surface of the substrate and led out, and by attaching metal bumps for external connection to this derived end, etc. It can be completed as an electronic device that can be surface-mounted.

また、本発明の電子部品封止用基板において、接続パッドおよび接続端子が内側に形成された枠部材を多数個縦横に配列形成した場合には、半導体基板の主面に多数の電子部品領域が縦横に配列形成されていたとしても、これらを一括して外部接続が可能なようにして封止することができる。   In addition, in the electronic component sealing substrate of the present invention, when a large number of frame members having connection pads and connection terminals formed inside are arranged in the vertical and horizontal directions, a large number of electronic component regions are formed on the main surface of the semiconductor substrate. Even if they are arranged vertically and horizontally, they can be sealed together so that they can be externally connected together.

本発明の電子装置の製造方法によれば、上記各工程を具備することから、縦横に配列形成された多数個の電子部品領域について、それぞれの電極の外部接続のための接続と微小電子機械機構の封止とを同時に行なうことができるため、互いに接合された電子部品および電子部品封止用基板から成る電子装置を、容易かつ確実に多数個製造することができる。   According to the method for manufacturing an electronic device of the present invention, since each of the above steps is provided, connection for external connection of each electrode and a microelectromechanical mechanism for a large number of electronic component regions arranged in rows and columns. Therefore, a large number of electronic devices composed of electronic components and electronic component sealing substrates bonded to each other can be manufactured easily and reliably.

また、互いに接合された電子部品および電子部品封止用基板を電子部品封止領域毎に分割することにより、電子部品封止領域に電子部品領域が接合されて成る個々の電子装置を多数個同時に製造することができる。この分割の際、電子部品領域の微小電子機械機構は封止用基板により封止されているので、ダイシング加工等による分割で発生するシリコン等の半導体基板の切削粉が微小電子機械機構に付着するようなことはなく、分割後の電子装置において微小電子機械機構を確実に作動させることができる。   In addition, by dividing the electronic component and the electronic component sealing substrate bonded to each other into each electronic component sealing region, a large number of individual electronic devices formed by bonding the electronic component region to the electronic component sealing region can be simultaneously performed. Can be manufactured. At the time of the division, the micro electro mechanical mechanism in the electronic component region is sealed by the sealing substrate, so that the cutting powder of the semiconductor substrate such as silicon generated by the dicing process or the like adheres to the micro electro mechanical mechanism. There is no such thing, and the micro electromechanical mechanism can be reliably operated in the divided electronic device.

また、分割して得られた電子装置は、絶縁基板の他方主面や側面に配線導体が導出されているので、この導出された端部に金属バンプ等の端子を取着するだけで、表面実装等により外部電気回路基板に実装することができるものとなり、実装の工程を非常に短く、かつ実装が容易なものとすることができる電子装置となる。   Moreover, since the wiring conductor is led out to the other main surface or side surface of the insulating substrate, the electronic device obtained by dividing the surface can be obtained by simply attaching a terminal such as a metal bump to the lead end. The electronic device can be mounted on an external electric circuit board by mounting or the like, so that the mounting process is very short and mounting is easy.

本発明の電子部品封止用基板およびそれを用いた電子装置の製造方法について以下に詳細に説明する。   The electronic component sealing substrate of the present invention and an electronic device manufacturing method using the same will be described in detail below.

図１は本発明の電子部品封止用基板の実施の形態の一例を示す断面図である。図１において、１は絶縁基板、２は配線導体、３は接続パッド、４は枠部材、５は接続端子である。これら絶縁基板１、配線導体２、接続パッド３、枠部材４および接続端子５により電子部品封止用基板６が形成される。   FIG. 1 is a sectional view showing an example of an embodiment of an electronic component sealing substrate of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 4 is a frame member, and 5 is a connection terminal. These insulating substrate 1, wiring conductor 2, connection pad 3, frame member 4 and connection terminal 5 form an electronic component sealing substrate 6.

この電子部品封止用基板６を用いて、半導体基板７の主面（図１の例では下面）に、微小電子機械機構８と電極９とを互いに電気的に接続するようにして形成して成る電子部品１０を封止することにより、微小電子機械機構８が外部接続可能な状態で封止されてなる電子装置が形成される。   The electronic component sealing substrate 6 is used to form a microelectromechanical mechanism 8 and an electrode 9 on the main surface (lower surface in the example of FIG. 1) of the semiconductor substrate 7 so as to be electrically connected to each other. By sealing the electronic component 10 formed, an electronic device is formed in which the microelectromechanical mechanism 8 is sealed in a state where it can be externally connected.

本発明における微小電子機械機構８は、例えば電気スイッチ、インダクタ、キャパシタ、共振器、アンテナ、マイクロリレー、光スイッチ、ハードディスク用磁気ヘッド、マイク、バイオセンサー、ＤＮＡチップ、マイクロリアクタ、プリントヘッド、加速度センサ、圧力センサなどの各種センサ、ディスプレイデバイスなどの機能を有する電子装置であり、半導体微細加工技術を基本とした、いわゆるマイクロマシニングで作る部品であり、１素子あたり１０μｍ〜数１００μｍ程度の寸法を有する。   The micro electro mechanical mechanism 8 in the present invention includes, for example, an electric switch, an inductor, a capacitor, a resonator, an antenna, a micro relay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, a microreactor, a print head, an acceleration sensor, It is an electronic device having functions such as various sensors such as pressure sensors and display devices, and is a part made by so-called micromachining based on semiconductor micromachining technology, and has a size of about 10 μm to several 100 μm per element.

絶縁基板１は、微小電子機械機構８を封止するための蓋体として機能するとともに、配線導体２、接続パッド３、枠部材４および接続端子５を形成するための基体として機能する。   The insulating substrate 1 functions as a lid for sealing the microelectromechanical mechanism 8 and also functions as a base for forming the wiring conductor 2, the connection pad 3, the frame member 4, and the connection terminal 5.

この絶縁基板１は、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化珪素質焼結体、ガラスセラミックス焼結体等のセラミックス材料や、ポリイミド、ガラスエポキシ樹脂等の有機樹脂材料、セラミックスやガラス等の無機粉末をエポキシ樹脂等の有機樹脂で結合して成る複合材等により形成される。   The insulating substrate 1 includes ceramic materials such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, and a glass ceramic sintered body. It is formed of an organic resin material such as polyimide or glass epoxy resin, or a composite material formed by bonding inorganic powder such as ceramics or glass with an organic resin such as epoxy resin.

絶縁基板１は、例えば、酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウムとガラス粉末等の原料粉末をシート上に成形して成るグリーンシートを積層し、焼成することにより形成される。なお、絶縁基板１は、酸化アルミニウム質焼結体で形成するものに限らず、用途や気密封止する電子部品１０の特性等に応じて適したものを選択することが好ましい。   If the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, the insulating substrate 1 is formed by laminating and baking a green sheet formed by forming aluminum oxide and a raw material powder such as glass powder on the sheet. . The insulating substrate 1 is not limited to the one formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the application and the characteristics of the electronic component 10 to be hermetically sealed.

例えば、絶縁基板１は、後述するように、枠部材４を介して半導体基板７と機械的に接合されるので、半導体基板７との接合の信頼性、つまり微小電子機械機構８の封止の気密性を高くするためには、ムライト質焼結体や、例えばガラス成分の種類や添加量を調整することにより熱膨張係数を半導体基板７に近似させるようにした酸化アルミニウム−ホウ珪酸ガラス系等のガラスセラミックス焼結体等のような半導体基板７との熱膨張係数の差が小さい材料で形成することが好ましい。   For example, since the insulating substrate 1 is mechanically bonded to the semiconductor substrate 7 via the frame member 4 as will be described later, the reliability of bonding with the semiconductor substrate 7, that is, the sealing of the micro electro mechanical mechanism 8 is achieved. In order to increase the airtightness, a mullite sintered body, an aluminum oxide-borosilicate glass system in which the thermal expansion coefficient is approximated to the semiconductor substrate 7 by adjusting, for example, the kind and addition amount of the glass component, etc. It is preferable to form a material having a small difference in thermal expansion coefficient from the semiconductor substrate 7 such as a glass ceramic sintered body.

また、絶縁基板１は、配線導体２により伝送される電気信号の遅延を防止するような場合には、ポリイミド、ガラスエポキシ樹脂等の有機樹脂材料、セラミックスやガラス等の無機粉末をエポキシ樹脂等の有機樹脂で結合して成る複合材、または、酸化アルミニウム−ホウ珪酸ガラス系や酸化リチウム系等のガラスセラミックス焼結体等のような比誘電率の小さい材料で形成することが好ましい。   Further, in the case of preventing the delay of the electrical signal transmitted by the wiring conductor 2, the insulating substrate 1 is made of an organic resin material such as polyimide or glass epoxy resin, or an inorganic powder such as ceramic or glass such as epoxy resin. It is preferably formed of a composite material formed by bonding with an organic resin, or a material having a low relative dielectric constant such as a sintered glass ceramic such as aluminum oxide-borosilicate glass or lithium oxide.

また、絶縁基板１は、封止する微小電子機械機構８の発熱量が大きく、この熱の外部への放散性を良好とするような場合には、窒化アルミニウム質焼結体等のような熱伝導率の大きな材料で形成することが好ましい。   Further, the insulating substrate 1 has a large calorific value of the microelectromechanical mechanism 8 to be sealed, and in the case where the heat dissipating property is good, a heat such as an aluminum nitride sintered body is used. It is preferable to form with a material having high conductivity.

絶縁基板１の一方主面（微小電子機械機構８を封止する側の主面）からは、他方主面または側面に配線導体２が導出されている。   From one main surface of the insulating substrate 1 (main surface on the side where the micro electro mechanical mechanism 8 is sealed), the wiring conductor 2 is led out to the other main surface or side surface.

また、この絶縁基板１の一方主面側の枠部材４の内側の部位には、配線導体２と接続された接続パッド３が形成されている。   In addition, a connection pad 3 connected to the wiring conductor 2 is formed in a portion inside the frame member 4 on the one main surface side of the insulating substrate 1.

これらの配線導体２および接続パッド３は、接続パッド３上に形成される接続端子５を介して電子部品１０の電極９と電気的に接続され、これを絶縁基板１の他方主面や側面に導出する機能を有する。   The wiring conductor 2 and the connection pad 3 are electrically connected to the electrode 9 of the electronic component 10 through the connection terminal 5 formed on the connection pad 3, and this is connected to the other main surface or side surface of the insulating substrate 1. It has a function to derive.

これらの配線導体２および接続パッド３は、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料により形成される。この形成の手段としては、メタライズ層、めっき層、蒸着等の金属を薄膜層として被着させる手段を用いることができる。例えば、タングステンのメタライズ層から成る場合であれば、タングステンのペーストを絶縁基板１となるセラミックグリーンシート（以下、グリーンシートともいう）に印刷してこれをグリーンシートとともに焼成することにより形成される。   These wiring conductors 2 and connection pads 3 are formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, and manganese. As a means for the formation, a means for depositing a metal such as a metallized layer, a plating layer, or vapor deposition as a thin film layer can be used. For example, in the case of a tungsten metallized layer, it is formed by printing a tungsten paste on a ceramic green sheet (hereinafter also referred to as a green sheet) to be the insulating substrate 1 and firing it together with the green sheet.

接続端子５は、錫−銀系、錫−銀−銅系等の半田、金−錫ろう等の低融点ろう材、銀−ゲルマニウム系等の高融点ろう材、導電性有機樹脂による接合が可能な金属材料、あるいはシーム溶接、電子ビーム溶接等の溶接法による接合が可能な金属材料等により形成されている。   The connection terminal 5 can be joined with tin-silver solder, tin-silver-copper solder, low melting point solder such as gold-tin solder, high melting solder such as silver-germanium, or conductive organic resin. Or a metal material that can be joined by a welding method such as seam welding or electron beam welding.

この接続端子５を電子部品１０の電極９に接合することにより、電子部品１０の電極９が、接続端子５、接続パッド３および配線導体２を介して、絶縁基板１の他方主面または側面に導出される。そして、この導出された端部を外部の電気回路に錫−鉛半田等を介して接合することにより、電子部品１０の電極９が外部の電気回路と電気的に接続される。   By joining the connection terminal 5 to the electrode 9 of the electronic component 10, the electrode 9 of the electronic component 10 is connected to the other main surface or side surface of the insulating substrate 1 via the connection terminal 5, the connection pad 3 and the wiring conductor 2. Derived. And the electrode 9 of the electronic component 10 is electrically connected with an external electric circuit by joining this derived | led-out edge part to an external electric circuit via tin-lead solder etc. FIG.

また、絶縁基板１の一方主面には、接続パッド３を取り囲むようにして枠部材４が接合されている。枠部材４は、電子部品１０の微小電子機械機構８をその内側に気密封止するための側壁として機能する。この枠部材４の主面（図１の例では上面）を電子部品１０の主面（図１の例では下面）に接合させることにより、枠部材４の内側に微小電子機械機構８が気密封止される。なお、この場合、半導体基板７が底板となり、絶縁基板１が蓋体となる。   A frame member 4 is joined to one main surface of the insulating substrate 1 so as to surround the connection pad 3. The frame member 4 functions as a side wall for hermetically sealing the microelectromechanical mechanism 8 of the electronic component 10 inside thereof. By joining the main surface (upper surface in the example of FIG. 1) of the frame member 4 to the main surface (lower surface in the example of FIG. 1) of the electronic component 10, the micro electromechanical mechanism 8 is hermetically sealed inside the frame member 4. Stopped. In this case, the semiconductor substrate 7 serves as a bottom plate and the insulating substrate 1 serves as a lid.

枠部材４は、鉄−ニッケル−コバルト合金や鉄−ニッケル合金等の鉄−ニッケル系合金、無酸素銅、アルミニウム、ステンレス鋼、銅−タングステン合金、銅−モリブデン合金等の金属材料や、酸化アルミニウム質焼結体、ガラスセラミックス焼結体等の無機系材料、あるいはＰＴＦＥ（ポリテトラフルオロエチレン）、ガラスエポキシ樹脂等の有機樹脂系材料等により形成される。   The frame member 4 is made of an iron-nickel alloy such as iron-nickel-cobalt alloy or iron-nickel alloy, a metal material such as oxygen-free copper, aluminum, stainless steel, copper-tungsten alloy, copper-molybdenum alloy, or aluminum oxide. It is formed of an inorganic material such as a quality sintered body or a glass ceramic sintered body, or an organic resin material such as PTFE (polytetrafluoroethylene) or glass epoxy resin.

また、枠部材４の主面を電子部品１０の半導体基板７の主面に接合する方法としては、錫−銀系等の半田，金−錫ろう等の低融点ろう材，銀−ゲルマニウム系等の高融点ろう材，導電性有機樹脂等の接合材を介して接合する方法、あるいはシーム溶接、電子ビーム溶接等の溶接法を用いることができる。   Further, as a method of joining the main surface of the frame member 4 to the main surface of the semiconductor substrate 7 of the electronic component 10, solder such as tin-silver type, low melting point brazing material such as gold-tin brazing, silver-germanium type, etc. A bonding method such as a high melting point brazing material, a conductive organic resin or the like, or a welding method such as seam welding or electron beam welding can be used.

そして、半導体基板７の主面に微小電子機械機構８およびこれに電気的に接続された電極９が形成されて成る電子部品１０について、電極９を接続端子５に接合し、半導体基板７の主面を枠部材４の主面に接合させることによって、枠部材４の内側に電子部品１０の微小電子機械機構８が気密封止された電子装置が形成される。
Then, for the electronic component 10 in which the microelectromechanical mechanism 8 and the electrode 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7, the electrode 9 is joined to the connection terminal 5. By joining the surface to the main surface of the frame member 4, an electronic device in which the microelectromechanical mechanism 8 of the electronic component 10 is hermetically sealed inside the frame member 4 is formed.

そして、この絶縁基板１の内部または表面には、導体パターンから成るローパスフィルタ１２が形成されており、配線導体２は高周波信号が伝送されるものを含み、ローパスフィルタ１２は高周波信号が伝送される配線導体２に直列に接続されていることから、ローパスフィルタ１２は高周波信号に対し高いインピーダンスを有するものとなり、駆動するＭＥＭＳが駆動中に外部より高周波ノイズが伝播してきても、駆動中のＭＥＭＳには高周波ノイズはローパスフィルタ１２によって選択的にカットされＭＥＭＳに与える悪影響をより低減することができる。   A low-pass filter 12 made of a conductor pattern is formed inside or on the surface of the insulating substrate 1. The wiring conductor 2 includes one that transmits a high-frequency signal, and the low-pass filter 12 transmits a high-frequency signal. Since the low-pass filter 12 has a high impedance with respect to a high-frequency signal because it is connected in series to the wiring conductor 2, even if high-frequency noise propagates from the outside during driving, the low-pass filter 12 is connected to the driving MEMS. The high-frequency noise is selectively cut by the low-pass filter 12, and the adverse effect on the MEMS can be further reduced.

また、ローパスフィルタ１２は、好ましくはπ型に接続されたコンデンサおよびインダクタ回路から形成されているため、ローパスフィルタ１２の入出力部において、コンデンサ回路をほぼ対称に配置することができるため、絶縁基板１を作製するときの反りを低減することができ、ＭＥＭＳを絶縁基板１に実装した際の１次実装信頼性が向上する。   In addition, since the low-pass filter 12 is preferably formed of a capacitor and an inductor circuit connected in a π-type, the capacitor circuit can be disposed almost symmetrically at the input / output portion of the low-pass filter 12, so that the insulating substrate 1 can be reduced, and the primary mounting reliability when the MEMS is mounted on the insulating substrate 1 is improved.

π型に接続されたコンデンサおよびインダクタ回路から成るローパスフィルタ１２とは、具体的には、高周波信号が伝送される配線導体２に直列に接続されたインダクタ回路と、そのインダクタ回路の両端に、接地（グランド）に対向電極の一方が接続されたコンデンサを接続する構成のものである。   Specifically, the low-pass filter 12 including a capacitor and an inductor circuit connected in a π-type is an inductor circuit connected in series to the wiring conductor 2 through which a high-frequency signal is transmitted, and both ends of the inductor circuit are grounded. In this configuration, a capacitor having one of the counter electrodes connected to (ground) is connected.

また本発明において、絶縁基板１は平面視形状が四角形であり、コンデンサは、枠部材４よりも内側に、平面視で絶縁基板１の対向する２辺の中心を通る直線または対角線に対して線対称に形成することが好ましい。これにより、絶縁基板１を作製するときの反りをさらに低減することができ、ＭＥＭＳと絶縁基板１との接続信頼性がより向上する。   In the present invention, the insulating substrate 1 has a quadrangular shape in plan view, and the capacitor is lined with respect to a straight line or a diagonal line passing through the centers of two opposite sides of the insulating substrate 1 in plan view, inside the frame member 4. It is preferable to form symmetrically. Thereby, the curvature at the time of manufacturing the insulated substrate 1 can further be reduced, and the connection reliability of MEMS and the insulated substrate 1 improves more.

また、コンデンサは、絶縁基板１の内部または表面に形成された導体パターンを用いて成る電極として、たとえば四角型、丸型などの形状が上下に重なっているものとなっている。   In addition, the capacitor has, for example, a quadrangular shape or a round shape that are vertically overlapped as an electrode formed by using a conductor pattern formed inside or on the surface of the insulating substrate 1.

そして、インダクタ回路は、たとえば、ミアンダ型、スパイラル型などの導体パターンで形成される。   The inductor circuit is formed of a conductor pattern such as a meander type or a spiral type.

また、好ましくはローパスフィルタ１２は、直線状の導体パターンと、導体パターンに形成された複数の突出部とにより形成することで、分布定数回路として機能させることができ、自己共振周波数が高くなることから、更なる高周波帯での使用が可能になる。   Preferably, the low-pass filter 12 is formed by a linear conductor pattern and a plurality of protrusions formed in the conductor pattern, so that it can function as a distributed constant circuit, and the self-resonance frequency is increased. Therefore, it can be used in a further high frequency band.

さらに、ローパスフィルタ１２をより小型に作製することができるので、絶縁基板１を作製するときの反りを低減することができ、ＭＥＭＳを絶縁基板１に実装した際の、１次実装信頼性が向上する。結果、信頼性の高い電子部品封止用基板６を得ることができる。
Furthermore, since the low-pass filter 12 can be manufactured in a smaller size, warpage when the insulating substrate 1 is manufactured can be reduced, and primary mounting reliability when the MEMS is mounted on the insulating substrate 1 is improved. To do. As a result, a highly reliable electronic component sealing substrate 6 can be obtained.

なお、このローパスフィルタ１２は配線導体２および接続パッド３と同様に作製される。   The low-pass filter 12 is manufactured in the same manner as the wiring conductor 2 and the connection pad 3.

この電子装置のうち配線導体２の導出部分を、半田ボール等の外部端子１１を介して外部の電気回路に接続することにより、微小電子機械機構８が外部電気回路と電気的に接続される。   By connecting the lead-out portion of the wiring conductor 2 of this electronic device to an external electric circuit via an external terminal 11 such as a solder ball, the microelectromechanical mechanism 8 is electrically connected to the external electric circuit.

なお、図１に示すように、枠部材４が接合される絶縁基板１の主面に、接続パッド３と同様の材料により導体層３ａを形成しておき、この導体層３ａから絶縁基板１の他方主面にかけて配線導体２の一部を導出させるようにしてもよい。この導体層３ａから導出された配線導体２の導出部分は、上述の外部端子１１等を介して外部電気回路の接地用端子等に接続することができる。   As shown in FIG. 1, a conductor layer 3a is formed of the same material as that of the connection pad 3 on the main surface of the insulating substrate 1 to which the frame member 4 is bonded, and the insulating substrate 1 is formed from the conductor layer 3a. A part of the wiring conductor 2 may be led out over the other main surface. The lead-out portion of the wiring conductor 2 led out from the conductor layer 3a can be connected to the grounding terminal of the external electric circuit or the like via the external terminal 11 or the like.

この場合、接続端子５と電極９との接合、および枠部材４の主面と半導体基板７の主面との接合を一つの工程で確実かつ容易に行なうことを可能とするために、接続端子５の高さと枠部材４の高さとは同じ高さとしておく。   In this case, in order to enable the bonding of the connection terminal 5 and the electrode 9 and the bonding of the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 to be performed reliably and easily in one step, the connection terminal The height of 5 and the height of the frame member 4 are set to the same height.

また、本発明の電子部品封止用基板６は、図２に実施の形態の他の例を断面図で示すように、このような接続パッド３および枠部材４を広面積の母基板の一方主面に縦横に配列形成した、いわゆる多数個取りの形態としておくことが好ましい。なお、図２において、図１と同じ部位には同じ符号を付してある。   Further, the electronic component sealing substrate 6 of the present invention has such a connection pad 3 and frame member 4 as one of the large-area mother substrates as shown in a sectional view in FIG. It is preferable to use a so-called multi-cavity configuration in which the main surface is arranged vertically and horizontally. In FIG. 2, the same parts as those in FIG.

このような多数個取りの形態としておくと、半導体基板７の主面に微小電子機械機構８およびこれに電気的に接続された電極９が多数個配列形成された、多数個取りの形態で製作される電子部品１０を、多数個同時に気密封止することができ、生産性を優れたものとすることができる。   In such a multi-cavity configuration, a multi-electromechanical mechanism 8 and a plurality of electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7 and manufactured in a multi-cavity configuration. A large number of electronic components 10 can be hermetically sealed at the same time, and the productivity can be improved.

また、半導体基板７の主面に微小電子機械機構８およびこれに電気的に接続された電極９が多数個配列形成された、多数個取りの形態で製作される電子部品１０を一括して封止しておくと、この半導体基板７（および電子部品封止用基板６）にダイシング加工等の切断加工を施して、個々の電子部品１０（電子装置）に分割する際に、切断に伴って発生する切削粉等が微小電子機械機構８に付着してその作動を妨害するという不具合の発生を効果的に防止することができる。   In addition, electronic components 10 manufactured in a multi-cavity form in which a large number of microelectromechanical mechanisms 8 and a plurality of electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7 are collectively sealed. If this is stopped, the semiconductor substrate 7 (and the electronic component sealing substrate 6) is subjected to a cutting process such as a dicing process to be divided into individual electronic components 10 (electronic devices). Generation | occurrence | production of the malfunction that the generated cutting powder etc. adhere to the micro electromechanical mechanism 8 and obstruct | operate the action | operation can be prevented effectively.

次に、このような電子部品封止用基板６を用いた、電子装置の製造方法について、図３（ａ）〜（ｄ）に基づいて説明する。図３は、本発明の電子装置の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図であり、図３において図１および図２と同じ部位には同じ符号を付してある。   Next, a method of manufacturing an electronic device using such an electronic component sealing substrate 6 will be described with reference to FIGS. FIG. 3 is a cross-sectional view showing an example of an embodiment of an electronic device manufacturing method according to the present invention in the order of steps. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals.

まず、図３（ａ）に示すように、半導体基板７の主面に、微小電子機械機構８およびこれに電気的に接続された電極９が形成されて成る電子部品領域１０ａを多数個縦横に配列形成した多数個取りの電子部品１０ｂを準備する。半導体基板７は、例えば単結晶や多結晶等のシリコン基板から成る。このシリコン基板の表面に酸化シリコン層を形成するとともに、フォトリソグラフィ等の微細配線加工技術を応用して、微小な振動体等の微小電子機械機構８および円形状パターン等の導体から成る電極９が形成された電子部品領域１０ａを多数個配列形成することにより、多数個取りの電子部品１０ｂが形成される。なお、この例においては、微小電子機械機構８と電極９とは、それぞれ半導体基板７の主面に形成された微細配線（図示せず）を介して電気的に接続されている。   First, as shown in FIG. 3A, a large number of electronic component regions 10a each having a microelectromechanical mechanism 8 and electrodes 9 electrically connected to the main surface of a semiconductor substrate 7 are formed vertically and horizontally. A multi-piece electronic component 10b having an array formed is prepared. The semiconductor substrate 7 is made of a silicon substrate such as a single crystal or polycrystal. A silicon oxide layer is formed on the surface of the silicon substrate, and by applying a fine wiring processing technique such as photolithography, a micro electromechanical mechanism 8 such as a minute vibrating body and an electrode 9 made of a conductor such as a circular pattern are provided. By arranging a large number of formed electronic component regions 10a, a multi-piece electronic component 10b is formed. In this example, the microelectromechanical mechanism 8 and the electrode 9 are electrically connected via fine wiring (not shown) formed on the main surface of the semiconductor substrate 7, respectively.

次に、図３（ｂ）に示すように、一方主面から他方主面または側面に導出された配線導体２が形成された絶縁基板１と、絶縁基板１の一方主面に形成された、配線導体２と電気的に接続された接続パッド３と、絶縁基板１の一方主面に接続パッド３を取り囲むようにして接合された枠部材４と、接続パッド３上に形成された、枠部材４と同じ高さの接続端子５とから成る電子部品封止領域６ａを多数個、電子部品の電子部品領域１０ａに対応させて配列形成した多数個取りの電子部品封止用基板６ｂを準備する。   Next, as shown in FIG. 3B, the insulating substrate 1 on which the wiring conductor 2 led out from the one main surface to the other main surface or the side surface is formed, and the one main surface of the insulating substrate 1 is formed. A connection pad 3 electrically connected to the wiring conductor 2, a frame member 4 joined so as to surround the connection pad 3 on one main surface of the insulating substrate 1, and a frame member formed on the connection pad 3 A plurality of electronic component sealing substrates 6b are prepared in which a large number of electronic component sealing regions 6a composed of connection terminals 5 having the same height as 4 are arranged in correspondence with the electronic component regions 10a of the electronic components. .

一方主面から他方主面または側面に導出された配線導体２が形成された絶縁基板１は、例えば、絶縁基板１が酸化アルミニウム質焼結体から成り、配線導体２がタングステンのメタライズ層から成る場合であれば、酸化アルミニウム、酸化珪素、酸化カルシウム等の原料粉末を、有機溶剤、樹脂バインダとともに混練してスラリーを得て、このスラリーをドクターブレード法やリップコータ法等によりシート状に成形して複数のグリーンシートを形成し、このグリーンシートの表面に、および必要に応じてグリーンシートにあらかじめ形成しておいた貫通孔内に、タングステンのメタライズペーストを印刷塗布し充填し、その後、これらのグリーンシートを積層して焼成することにより形成することができる。   Insulating substrate 1 on which wiring conductor 2 led out from one main surface to the other main surface or side surface is formed, for example, insulating substrate 1 is made of an aluminum oxide sintered body, and wiring conductor 2 is made of a metallized layer of tungsten. In some cases, raw powders such as aluminum oxide, silicon oxide, and calcium oxide are kneaded with an organic solvent and a resin binder to obtain a slurry, and this slurry is formed into a sheet by a doctor blade method, a lip coater method, or the like. A plurality of green sheets are formed, and a tungsten metallized paste is printed and filled on the surface of the green sheets, and if necessary, in the through holes previously formed in the green sheets. It can be formed by laminating and firing sheets.

なお、これらのグリーンシートのうち、一部のものに打ち抜き加工を施して四角形状等の開口部を形成しておき、これを一方主面側の最表層に配置し、または最表層から内部に向かって数層積層するようにして、焼成後の絶縁基板１の一方主面に、電子部品領域１０ａの配列に対応する凹部１ａが配列形成されるようにしておく。このように凹部１ａを形成しておくと、この凹部１ａの内側に微小電子機械機構８を収めることができるので、微
小電子機械機構８を取り囲むための枠部材４の高さを低く抑えることができ、電子装置の低背化に有利なものとなる。 Of these green sheets, some of them are punched to form square-shaped openings, etc., which are arranged on the outermost layer on one main surface side, or from the outermost layer to the inside. headed to be stacked several layers and, on one main surface of the insulating substrate 1 after firing, Contact Ku as recesses 1a corresponding to a sequence of electronic component regions 10a are arranged and formed. If the concave portion 1a is formed in this manner, the micro electro mechanical mechanism 8 can be accommodated inside the concave portion 1a, so that the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low. This is advantageous for reducing the height of the electronic device.

また、接続パッド３は、通常、配線導体２と同様の材料から成り、例えば、タングステンのペーストを絶縁基板１となるグリーンシートのうち最表面に、配線導体２となる印刷されたタングステンペーストと接続されるようにして、かつ多数個が縦横に配列形成されるようにして、スクリーン印刷法等により印刷しておくことにより形成される。   The connection pad 3 is usually made of the same material as that of the wiring conductor 2. For example, a tungsten paste is connected to the printed tungsten paste to be the wiring conductor 2 on the outermost surface of the green sheet to be the insulating substrate 1. In this manner, a large number are arranged in rows and columns and printed by screen printing or the like.

また、枠部材４は、例えば、鉄−ニッケル−コバルト合金から成る場合であれば、鉄−ニッケル−コバルト合金の金属板に圧延加工や金型による打ち抜き加工またはエッチング加工を施し、枠状に成形することにより製作される。   Further, if the frame member 4 is made of, for example, an iron-nickel-cobalt alloy, the metal plate of the iron-nickel-cobalt alloy is subjected to a rolling process, a punching process using a mold, or an etching process to form a frame shape. It is manufactured by doing.

枠部材４と絶縁基板１との接合は、錫−銀系等の半田，金−錫ろう等の低融点ろう材や銀−ゲルマニウム系等の高融点ろう材，導電性有機樹脂等の接合材を介して接合する方法、あるいはシーム溶接、電子ビーム溶接等の溶接法により行なうことができる。   The frame member 4 and the insulating substrate 1 are joined by a solder such as a tin-silver solder, a low-melting solder such as gold-tin solder, a high-melting solder such as a silver-germanium, or a conductive organic resin. It can be carried out by a method of joining via a seam or a welding method such as seam welding or electron beam welding.

この枠部材４と同じ高さとなるようにして、接続端子５が接続パッド３上に形成される。接続端子５は、例えば、錫−銀系等の半田から成る場合であれば、この半田のボールを接続パッド３上に位置決めして加熱、溶融、接合させることにより形成される。   Connection terminals 5 are formed on the connection pads 3 so as to have the same height as the frame member 4. If the connection terminal 5 is made of, for example, tin-silver solder, the connection terminal 5 is formed by positioning, heating, melting, and joining the solder balls on the connection pads 3.

接続端子５の高さを枠部材４の高さと同じとする方法としては、例えば、接続端子５となる錫−銀半田を溶融させて接続パッド３上に取着形成する際に、その上面を枠部材４と同じ高さとなるようにしてセラミックス製の治具等で押さえておく等の方法を用いることができる。   As a method of making the height of the connection terminal 5 the same as the height of the frame member 4, for example, when the tin-silver solder used as the connection terminal 5 is melted and formed on the connection pad 3, the upper surface thereof is changed. It is possible to use a method such as pressing with a ceramic jig or the like so as to be the same height as the frame member 4.

次に、図３（ｃ）に示すように、電子部品１０ｂを電子部品封止用基板６ｂに対し各電子部品領域１０ａと各電子部品封止領域６ａとを対応させて重ね合わせ、電極９を接続端子５に接合するとともに、微小電子機械機構８の周囲の半導体基板７の主面を枠部材４の主面に接合して、微小電子機械機構８を枠部材４の内側に気密封止する。
Next, as shown in FIG. 3 (c), overlapped with the electronic component 10b in correspondence with each electronic component regions 10a and the electronic component sealing region 6a to the electronic component sealing substrate 6b, the electrode 9 In addition to bonding to the connection terminal 5, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 is bonded to the main surface of the frame member 4, and the micro electro mechanical mechanism 8 is hermetically sealed inside the frame member 4. .

ここで、電極９と接続端子５との接合は、例えば、接続端子５が錫−銀系半田から成る場合であれば、電極９上に接続端子５を位置合わせして載せ、これらを約２５０℃〜３００℃程度の温度のリフロー炉中で熱処理すること等により行なわれる。
Here, when the electrode 9 and the connection terminal 5 are joined, for example, when the connection terminal 5 is made of tin-silver solder, the connection terminal 5 is aligned and placed on the electrode 9 , and these are placed at about 250. For example, the heat treatment is performed in a reflow furnace at a temperature of about from ℃ to 300 ℃.

また、微小電子機械機構８の周囲の半導体基板７の主面と枠部材４の主面との接合は、例えば、この接合面に、接続端子５と同様の錫−銀系の半田を挟んでおき、上述の電極９と接続端子５との接合と同時にリフロー炉中で熱処理することにより行なうことができる。この場合、接続端子５の高さを枠部材４の高さと同じとしていることから、電極９と接続端子５との接合と、枠部材４の主面と半導体基板７の主面との接合を容易かつ確実に、同時に行なうことができる。
In addition, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 and the main surface of the frame member 4 are joined, for example, with a tin-silver solder similar to the connection terminal 5 sandwiched between the joint surfaces. In addition, the heat treatment can be performed in the reflow furnace simultaneously with the joining of the electrode 9 and the connection terminal 5 described above. In this case, since the height of the connection terminal 5 is the same as the height of the frame member 4, the bonding between the electrode 9 and the connection terminal 5 and the bonding between the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 are performed. It can be done easily and reliably at the same time.

このように、本発明の電子装置の製造方法によれば、電子部品領域１０ａの電極９の外部導出のための接合と、微小電子機械機構８の気密封止のための接合とを同時に行なうことができるため、数時間程度を要する半田（ろう）付け等の接合の工程を、従来の製造方法に比べて、確実に少なくとも１工程減らすことができるので、電子装置の生産性を非常に高めることができる。 As described above, according to the method for manufacturing an electronic device of the present invention, bonding for leading out the electrode 9 in the electronic component region 10a and bonding for hermetic sealing of the microelectromechanical mechanism 8 are simultaneously performed. Therefore, it is possible to reliably reduce at least one step of joining such as soldering that requires several hours as compared with the conventional manufacturing method, so that the productivity of electronic devices is greatly increased. Can do.

そして、図３（ｄ）に示すように、互いに接合された多数個取りの形態の電子部品１０ｂおよび電子部品封止用基板６ｂを電子部品封止領域６ａ毎に分割して、電子部品封止領域６ａが分割された電子部品封止用基板６に電子部品領域１０ａが分割された電子部品１０が接合されて成る個々の電子装置を得る。   Then, as shown in FIG. 3D, the electronic component 10b and the electronic component sealing substrate 6b joined together are divided into the electronic component sealing regions 6a, and the electronic component sealing is performed. Individual electronic devices are obtained in which the electronic component sealing substrate 6 in which the region 6a is divided is joined to the electronic component 10 in which the electronic component region 10a is divided.

互いに接合された、それぞれ多数個取りの形態の電子部品１０ｂおよび電子部品封止用基板６ｂの接合体の切断は、この接合体に対して、ダイシング加工等の切断加工を施すことにより行なうことができる。   Cutting the joined body of the electronic component 10b and the electronic component sealing substrate 6b, which are joined together, in a multi-cavity form, can be performed by subjecting the joined body to a cutting process such as dicing. it can.

本発明の電子装置の製造方法においては、このダイシング加工等の切断加工の際に、各微小電子機械機構８は枠部材４の内側でこの枠部材４と半導体基板７と絶縁基板１とにより気密封止されているので、半導体基板７や絶縁基板１等の切断に伴って発生するシリコンやセラミックス等の切削粉等が微小電子機械機構８に付着することはなく、完成した電子装置において、微小電子機械機構８を確実に正常に作動させることができる。   In the method of manufacturing an electronic device according to the present invention, each microelectromechanical mechanism 8 is separated by the frame member 4, the semiconductor substrate 7, and the insulating substrate 1 inside the frame member 4 during the cutting process such as dicing. Since it is hermetically sealed, cutting powder such as silicon or ceramics generated when the semiconductor substrate 7 or the insulating substrate 1 is cut does not adhere to the microelectromechanical mechanism 8. The electronic mechanical mechanism 8 can be reliably operated normally.

このように、本発明の電子装置の製造方法によれば、従来のように、半導体基板７の主面に多数個を縦横に配列形成した電子部品領域１０ａを切断する際に、その微小電子機械機構８をガラス板等で覆って保護するような工程を別途追加する必要はなく、この、保護のためだけという工程を確実に削除することができるので、電子装置の生産性を非常に高いものとすることができる。   As described above, according to the method for manufacturing an electronic device of the present invention, when cutting the electronic component region 10a in which a large number are vertically and horizontally formed on the main surface of the semiconductor substrate 7 as in the prior art, the microelectronic machine is cut. It is not necessary to add a separate process for protecting the mechanism 8 by covering it with a glass plate or the like, and it is possible to reliably eliminate this process only for protection, so that the productivity of the electronic device is extremely high. It can be.

また、このようにして製造された電子装置は、すでに気密封止されているとともに、その電極が配線導体２を介して外部に導出された状態であるので、これを別途パッケージ内に実装するような工程を追加する必要はなく、配線導体２の導出された部分を外部の電気回路に半田ボール等の外部端子１１を介して接続するだけで、外部電気回路基板に実装して使用することができる。   In addition, the electronic device manufactured in this way is already hermetically sealed, and the electrode is led out to the outside through the wiring conductor 2, so that it is mounted in a separate package. There is no need to add an additional process, and it is possible to mount and use it on an external electric circuit board simply by connecting the lead-out portion of the wiring conductor 2 to an external electric circuit via an external terminal 11 such as a solder ball. it can.

また、この場合、配線導体２は、絶縁基体１の他方主面または側面に導出されているので、外部電気回路に表面実装の形態で接続することができ、高密度に実装することや外部電気回路の基板を効果的に小型化することができる。   Further, in this case, since the wiring conductor 2 is led out to the other main surface or side surface of the insulating base 1, it can be connected to an external electric circuit in the form of surface mounting, and can be mounted with high density or external electric power. The circuit board can be effectively downsized.

なお、本発明は上述の実施の形態の例に限定されるものではなく、本発明の要旨の範囲内であれば種々の変更を施すことは可能である。例えば、上述の実施の形態の例では一つの電子装置内に一つの微小電子機械機構を気密封止したが、一つの電子装置内に複数の微小電子機械機構を気密封止してもよい。また、図１に示した例では、配線導体２は絶縁基板１の他方主面側に導出しているが、これを側面に導出したり側面および他方主面の両方に導出したりしてもよい。また、この導出された部分の外部電気回路への電気的な接続は、外部端子として半田ボールを介して行なうものに限らず、リード端子や導電性接着剤等を介して行なってもよい。   The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention. For example, in the example of the above-described embodiment, one microelectromechanical mechanism is hermetically sealed in one electronic device, but a plurality of microelectromechanical mechanisms may be hermetically sealed in one electronic device. Further, in the example shown in FIG. 1, the wiring conductor 2 is led out to the other main surface side of the insulating substrate 1, but it may be led out to the side surface or to both the side surface and the other main surface. Good. Further, the electrical connection of the derived portion to an external electric circuit is not limited to being performed via a solder ball as an external terminal, and may be performed via a lead terminal, a conductive adhesive, or the like.

また、本発明におけるローパスフィルタ１２は高周波ノイズの低減のみに用いられるものではなく、その他マッチング、位相調整などに用いられてもよく、上記の使用形態に限定されるものではない。   In addition, the low-pass filter 12 in the present invention is not only used for reducing high-frequency noise, but may be used for other matching, phase adjustment, and the like, and is not limited to the above usage pattern.

本発明の電子部品封止用基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the board | substrate for electronic component sealing of this invention. 本発明の電子部品封止用基板の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the board | substrate for electronic component sealing of this invention. （ａ）〜（ｄ）は、本発明の電子装置の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図である。(A)-(d) is sectional drawing which showed an example of embodiment of the manufacturing method of the electronic device of this invention in order of the process, respectively. 従来の電子部品封止用基板およびそれを用いて成る電子装置の一例を示す断面図である。It is sectional drawing which shows an example of the conventional electronic component sealing substrate and an electronic apparatus using the same.

符号の説明Explanation of symbols

１：絶縁基板
２：配線導体
３：接続パッド
４：枠部材
５：接続端子
６：電子部品封止用基板
６ａ：電子部品封止領域
６ｂ：電子部品封止用基板
７：半導体基板
８：微小電子機械機構
９：電極
１０：電子部品
１０ａ：電子部品領域
１０ｂ：電子部品
１１：外部端子
１２：ローパスフィルタ 1: insulating substrate 2: wiring conductor 3: connection pad 4: frame member 5: connection terminal 6: electronic component sealing substrate 6a: electronic component sealing region 6b: electronic component sealing substrate 7: semiconductor substrate 8: minute Electronic mechanical mechanism 9: Electrode 10: Electronic component 10a: Electronic component region 10b: Electronic component 11: External terminal 12: Low pass filter

Claims (6)

一方主面から他方主面または側面に導出された複数の配線導体が形成され、前記一方主面に凹部が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記絶縁基板の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、前記配線導体は高周波信号が伝送されるものを含み、前記ローパスフィルタは前記高周波信号が伝送される配線導体に直列に接続されており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の前記電極を前記接続端子に接合し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記絶縁基板の前記微小電子機械機構に対向する部位に凹部が形成されているとともに、前記枠部材の内側に前記電子部品の前記微小電子機械機構を気密封止することを特徴とする電子部品封止用基板。 An insulating substrate in which a plurality of wiring conductors led out from one main surface to the other main surface or side surface are formed, and a recess is formed in the one main surface, and the wiring formed on the one main surface of the insulating substrate conductor and electrically connected to connection pads, before Symbol a frame member joined so as to surround the connection pads to the one main surface of the insulating substrate, it is formed on the connection pads, and the frame member It comprises a connection terminal having the same height and a low-pass filter made of a conductor pattern formed in or on the surface of the insulating substrate, wherein the wiring conductor includes one that transmits a high-frequency signal, and the low-pass filter includes the high-frequency signal. Are connected in series to a wiring conductor through which a micro electromechanical mechanism and an electrode electrically connected to the main surface of the semiconductor substrate are formed. Bonded to the terminal, by joining the main surface of the semiconductor substrate to the main surface of the frame member, with the recess is formed at a portion opposed to the micro electronic mechanical system of the insulating substrate, the frame member An electronic component sealing substrate, wherein the micro electro mechanical mechanism of the electronic component is hermetically sealed inside. 前記ローパスフィルタは、π型に接続されたコンデンサおよびインダクタ回路から成ることを特徴とする請求項１記載の電子部品封止用基板。   2. The electronic component sealing substrate according to claim 1, wherein the low-pass filter includes a capacitor and an inductor circuit connected in a π type. 前記絶縁基板は平面視形状が四角形であり、前記コンデンサは、前記枠部材よりも内側に、平面視で前記絶縁基板の対向する２辺の中心を通る直線または対角線に対して線対称に形成されていることを特徴とする請求項２記載の電子部品封止用基板。   The insulating substrate has a quadrangular shape in plan view, and the capacitor is formed in line symmetry with respect to a straight line or a diagonal line passing through the centers of two opposite sides of the insulating substrate in plan view, inside the frame member. 3. The electronic component sealing substrate according to claim 2, wherein the electronic component sealing substrate is provided. 前記ローパスフィルタは、直線状の前記導体パターンと、前記導体パターンに形成された複数の突出部とから構成されていることを特徴とする請求項１記載の電子部品封止用基板。   2. The electronic component sealing substrate according to claim 1, wherein the low-pass filter includes a linear conductor pattern and a plurality of protrusions formed in the conductor pattern. 絶縁母基板の一方主面に多数個縦横に配列形成された、前記一方主面から他方主面または側面に導出された複数の配線導体が形成され、前記一方主面に凹部が形成された絶縁基板領域と、該各絶縁基板領域の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記各絶縁基板領域の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記各絶縁基板領域の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、前記配線導体は高周波信号が伝送されるものを含み、前記ローパスフィルタは前記高周波信号が伝送される配線導体に直列に接続されており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電
子部品の前記電極を前記接続端子に接合するとともに、前記半導体基板の前記主面に形成されている前記微小電子機械機構に対向するように前記各絶縁基板領域の前記一方主面に形成されている前記凹部を配置し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記各絶縁基板領域の前記枠部材の内側に前記電子部品の前記微小電子機械機構をそれぞれ気密封止することを特徴とする多数個取り用電子部品封止用基板。 Insulation in which a plurality of wiring conductors led out from the one main surface to the other main surface or side surfaces are formed on one main surface of the insulating mother board in a vertical and horizontal manner, and a recess is formed in the one main surface surrounding a substrate region, respective formed in said one main surface of the insulating substrate region, and a connection pad the wired conductor electrically connected, the connection pads before SL on the one main surface of the insulating substrate regions Low-pass filter comprising a frame member joined in this manner, a connection terminal formed on the connection pad and having the same height as the frame member, and a conductor pattern formed inside or on the surface of each insulating substrate region The wiring conductor includes a component that transmits a high-frequency signal, and the low-pass filter is connected in series to the wiring conductor that transmits the high-frequency signal. Together joined to and the connection terminal to the electrode of the electronic components made thereto are electrically connected electrode is formed, so as to face the micro electronic mechanical system formed on the main surface of the semiconductor substrate wherein placing the other hand the recess formed on the main surface of the insulating substrate areas, by joining the main surface of the semiconductor substrate to the main surface of the frame member, the frame before Symbol respective insulating substrate regions A multi-piece electronic component sealing substrate, wherein the micro-electromechanical mechanism of the electronic component is hermetically sealed inside a member. 半導体基板の主面に、微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品領域を多数個縦横に配列形成した電子部品を準備する工程と、一方主面から他方主面または側面に導出された複数の配線導体が形成され、前記一方主面に凹部が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記絶縁基板の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、前記配線導体は高周波信号が伝送されるものを含み、前記ローパスフィルタは前記高周波信号が伝送される配線導体に直列に接続された電子部品封止領域を多数個、前記電子部品の前記電子部品領域に対応させて配列形成した電子部品封止用基板を準備する工程と、前記電子部品の前記電極を前記接続端子に接合するとともに、前記半導体基板の前記主面に形成されている前記微小電子機械機構に対向するように前記絶縁基板の前記一方主面に形成されている前記凹部を配置し、前記微小電子機械機構の周囲の前記半導体基板の前記主面を前記枠部材の主面に接合して、前記微小電子機械機構を前記枠部材の内側に気密封止する工程と、互いに接合された前記電子部品および前記電子部品封止用基板を前記電子部品封止領域毎に分割して、前記電子部品封止領域に前記電子部品領域が接合されて成る個々の電子装置を得る工程とを具備することを特徴とする電子装置の製造方法。 A step of preparing an electronic component in which a plurality of electronic component regions formed by forming microelectromechanical mechanisms and electrodes electrically connected to the main surface of a semiconductor substrate are arranged vertically and horizontally; A plurality of wiring conductors led out on the main surface or side surfaces are formed, an insulating substrate having a recess formed on the one main surface, and the wiring conductor formed on the one main surface of the insulating substrate electrically and connected to connection pads, before Symbol a frame member joined so as to surround the connection pads to the one main surface of the insulating substrate, it is formed on the connection pads, connection of the same height as the frame member And a low-pass filter comprising a conductor pattern formed inside or on the surface of the insulating substrate. The wiring conductor includes one that transmits a high-frequency signal. The low-pass filter transmits the high-frequency signal. Preparing a plurality of electronic component sealing regions connected in series to the wiring conductor to be formed, an electronic component sealing substrate formed in an array corresponding to the electronic component region of the electronic component; and The electrode is joined to the connection terminal, and the concave portion formed on the one main surface of the insulating substrate is disposed to face the microelectromechanical mechanism formed on the main surface of the semiconductor substrate. and, wherein said main surface of said semiconductor substrate around the micro electronic mechanical system and joined to the main surface of the frame member, and a pre-Symbol microelectromechanical system process to hermetically seal the inside of the frame member, to each other The step of dividing the electronic component and the electronic component sealing substrate bonded to each electronic component sealing region to obtain individual electronic devices in which the electronic component region is bonded to the electronic component sealing region. And comprising Method of manufacturing an electronic device according to claim and.
JP2004020586A 2004-01-28 2004-01-28 Electronic component sealing substrate, multi-component electronic component sealing substrate, and method of manufacturing electronic device Expired - Fee Related JP4761713B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004020586A JP4761713B2 (en) 2004-01-28 2004-01-28 Electronic component sealing substrate, multi-component electronic component sealing substrate, and method of manufacturing electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004020586A JP4761713B2 (en) 2004-01-28 2004-01-28 Electronic component sealing substrate, multi-component electronic component sealing substrate, and method of manufacturing electronic device

Publications (2)

Publication Number Publication Date
JP2005212017A JP2005212017A (en) 2005-08-11
JP4761713B2 true JP4761713B2 (en) 2011-08-31

Family

ID=34904458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004020586A Expired - Fee Related JP4761713B2 (en) 2004-01-28 2004-01-28 Electronic component sealing substrate, multi-component electronic component sealing substrate, and method of manufacturing electronic device

Country Status (1)

Country Link
JP (1) JP4761713B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1939911B1 (en) 2005-08-17 2012-02-29 G-Device Corporation Compact tilted vibration sensor and method of manufacturing the same
JP5013824B2 (en) * 2005-11-16 2012-08-29 京セラ株式会社 Electronic component sealing substrate, plural-shaped electronic component sealing substrate, electronic device using electronic component sealing substrate, and method of manufacturing electronic device
JP2007214441A (en) * 2006-02-10 2007-08-23 Dainippon Printing Co Ltd Composite sensor package
JP4848789B2 (en) * 2006-02-10 2011-12-28 大日本印刷株式会社 Manufacturing method of electronic device
JP2007214438A (en) * 2006-02-10 2007-08-23 Dainippon Printing Co Ltd Sensor package
JP2008213061A (en) * 2007-03-01 2008-09-18 Toshiba Corp Semiconductor device and its manufacturing method
JP2009010261A (en) * 2007-06-29 2009-01-15 Fujikura Ltd Semiconductor package and manufacturing method thereof
JP2012195829A (en) 2011-03-17 2012-10-11 Seiko Epson Corp Oscillation circuit
JP2012222718A (en) 2011-04-13 2012-11-12 Seiko Epson Corp Oscillator

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04293311A (en) * 1991-03-22 1992-10-16 Murata Mfg Co Ltd Surface acoustic wave device
JPH07115306A (en) * 1993-10-15 1995-05-02 Murata Mfg Co Ltd Dielectric filter
JPH10107179A (en) * 1996-09-27 1998-04-24 Kyocera Corp Package for high frequency circuit
JP3644205B2 (en) * 1997-08-08 2005-04-27 株式会社デンソー Semiconductor device and manufacturing method thereof
JPH1167950A (en) * 1997-08-26 1999-03-09 Kyocera Corp Electronic component housing package
JP3618046B2 (en) * 1998-04-27 2005-02-09 京セラ株式会社 High frequency circuit package
JP3673435B2 (en) * 1999-09-29 2005-07-20 京セラ株式会社 Package for storing semiconductor elements
JP2002050980A (en) * 2000-08-04 2002-02-15 Matsushita Electric Ind Co Ltd High frequency switch and radio communication apparatus using the switch
JP2002094410A (en) * 2000-09-20 2002-03-29 Ngk Spark Plug Co Ltd Antenna switch module equipped with saw filter
JP2002289718A (en) * 2001-03-27 2002-10-04 Kyocera Corp Solid-state image pickup device
JP4530579B2 (en) * 2001-05-22 2010-08-25 京セラ株式会社 Package for storing semiconductor elements
JP2002353755A (en) * 2001-05-30 2002-12-06 Matsushita Electric Ind Co Ltd Amplifier, optical transmitter and optical receiver, and optical transmitter
JP3948925B2 (en) * 2001-10-15 2007-07-25 Ｔｄｋ株式会社 High frequency module parts
JP2003163295A (en) * 2001-11-28 2003-06-06 Kyocera Corp Package for housing semiconductor element and semiconductor device
JP3772740B2 (en) * 2001-12-21 2006-05-10 株式会社村田製作所 Manufacturing method of electronic parts
JP2003218253A (en) * 2002-01-18 2003-07-31 Kyocera Corp Package for storing semiconductor element, and semiconductor device
JP2003304027A (en) * 2002-04-12 2003-10-24 Kyocera Corp Package for housing optical semiconductor element

Also Published As

Publication number Publication date
JP2005212017A (en) 2005-08-11

Similar Documents

Publication Publication Date Title
EP2121511B1 (en) Method of packaging an electronic or micromechanical component
EP1961696B1 (en) Electronic device using electronic part sealing board and method of fabricating same
JP4312631B2 (en) Wafer level package structure and manufacturing method thereof, and device divided from wafer level package structure
JP4741621B2 (en) Electronic component sealing substrate, electronic device using the same, and electronic device manufacturing method
WO2008023465A1 (en) Microelectronic machine mechanism device, and its manufacturing method
JP5013824B2 (en) Electronic component sealing substrate, plural-shaped electronic component sealing substrate, electronic device using electronic component sealing substrate, and method of manufacturing electronic device
JPWO2008066087A1 (en) MICROSTRUCTURE DEVICE, ITS MANUFACTURING METHOD, AND SEALING SUBSTRATE
JP4761713B2 (en) Electronic component sealing substrate, multi-component electronic component sealing substrate, and method of manufacturing electronic device
JP4268480B2 (en) Electronic component sealing substrate and electronic device using the same
JP4126459B2 (en) Electronic component sealing substrate, electronic device using the same, and electronic device manufacturing method
JP2005262382A (en) Electronic device and its manufacturing method
JP3842751B2 (en) Electronic component sealing substrate and electronic device manufacturing method using the same
JP4903540B2 (en) Substrate for encapsulating microelectromechanical components, substrate for encapsulating microelectromechanical components in plural shapes, microelectromechanical device, and manufacturing method of microelectronic mechanical device
JP4781098B2 (en) Electronic equipment
JP2005212016A (en) Electronic part sealing substrate, electronic part sealing substrate for installing a large number and method of manufacturing electronic device
JP4116954B2 (en) Electronic component sealing substrate and electronic device using the same
JP2008219348A (en) Manufacturing method of piezoelectric device, and piezoelectric device
JP4731291B2 (en) Electronic component sealing substrate, electronic device using the same, and method of manufacturing electronic device
JP4434870B2 (en) Multi-cavity electronic component sealing substrate, electronic device, and method of manufacturing electronic device
JP4404647B2 (en) Electronic device and electronic component sealing substrate
JP2005153067A (en) Substrate for sealing of electronic part and manufacturing method of electronic device using it
JP4673670B2 (en) Method for manufacturing piezoelectric device
JP2006185968A (en) Electronic device
JP2006295213A (en) Board for sealing electronic component, board of multi-patterned form for sealing electronic component, and electronic apparatus
JP2006100446A (en) Composite structure and substrate for sealing electronic component

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070119

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100420

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100604

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101022

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110607

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140617

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4761713

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees