JP4126459B2 - Electronic component sealing substrate, electronic device using the same, and electronic device manufacturing method - Google Patents

Electronic component sealing substrate, electronic device using the same, and electronic device manufacturing method Download PDF

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JP4126459B2
JP4126459B2 JP2003302418A JP2003302418A JP4126459B2 JP 4126459 B2 JP4126459 B2 JP 4126459B2 JP 2003302418 A JP2003302418 A JP 2003302418A JP 2003302418 A JP2003302418 A JP 2003302418A JP 4126459 B2 JP4126459 B2 JP 4126459B2
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electronic component
substrate
main surface
conductor
electronic
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JP2005072420A (en
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克亨 吉田
格 石井
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Description

本発明は、電子部品の微小電子機械機構を封止するための電子部品封止用基板、およびそれを用いて電子部品の微小電子機械機構を封止することにより形成される電子装置、およびそのような電子装置の製造方法に関する。DEJ The present invention relates to an electronic component sealing substrate for sealing a micro electro mechanical mechanism of an electronic component, an electronic device formed by sealing the micro electro mechanical mechanism of an electronic component using the same , and the same The present invention relates to a method for manufacturing such an electronic device . DEJ

近年、シリコンウェハ等の半導体基板の主面に、半導体集積回路素子等の微細配線を形成する加工技術を応用して、極めて微小な電子機械機構、いわゆるＭＥＭＳ（Micro Electromechanical System）を形成した電子部品が注目され、実用化に向けて開発が進められている。   2. Description of the Related Art In recent years, an electronic component in which a very small electromechanical mechanism, so-called MEMS (Micro Electromechanical System), is formed by applying a processing technique for forming fine wiring such as a semiconductor integrated circuit element on the main surface of a semiconductor substrate such as a silicon wafer. Has been attracting attention, and is being developed for practical use.

このような微小電子機械機構としては、加速度計，圧力センサ，アクチュエータ等のセンサや、微細な鏡面体を可動式に形成したマイクロミラーデバイス，光デバイスあるいはマイクロポンプ等を組み込んだマイクロ化学システム等の非常に広い分野にわたるものが試作、開発されている。   Such microelectromechanical mechanisms include sensors such as accelerometers, pressure sensors, actuators, micromirror devices with movable micromirrors, optical devices or microchemical systems incorporating micropumps, etc. Prototypes have been developed and developed over a very wide field.

そのような微小電子機械機構を形成した電子部品を用いて電子装置を構成するための従来の電子部品封止用基板およびそれを用いて成る電子装置の一例を図４に断面図で示す。図４に示す例では、微小電子機械機構22が形成された半導体基板21の主面には、微小電子機械機構22に電力を供給したり、微小電子機械機構22から外部電気回路に電気信号を送り出したりするための電極23が微小電子機械機構22と電気的に接続されて形成されており、これら半導体基板21，微小電子機械機構22および電極23により、１つの電子部品24が構成される。   FIG. 4 is a cross-sectional view of an example of a conventional electronic component sealing substrate for configuring an electronic device using an electronic component having such a micro-electromechanical mechanism and an electronic device using the same. In the example shown in FIG. 4, power is supplied to the main surface of the semiconductor substrate 21 on which the micro electro mechanical mechanism 22 is formed, or an electric signal is transmitted from the micro electro mechanical mechanism 22 to an external electric circuit. An electrode 23 for feeding out is formed by being electrically connected to the micro electro mechanical mechanism 22, and the semiconductor substrate 21, the micro electro mechanical mechanism 22 and the electrode 23 constitute one electronic component 24.

なお、このような電子部品24は、通常、後述するように、半導体基板21の主面に多数個が縦横に配列形成された多数個取りの形態で形成された後、個々の半導体基板21に切断することにより製作されるので、この切断の際に切削粉等の異物が微小電子機械機構22に付着して作動の妨げになることを防止するために、ガラス板25等で覆われて保護されている。   Note that such an electronic component 24 is normally formed in a multi-cavity form in which a large number are arranged in a vertical and horizontal manner on the main surface of the semiconductor substrate 21, as will be described later, and then the individual semiconductor substrates 21 are formed. Since it is manufactured by cutting, in order to prevent foreign matter such as cutting powder from adhering to the microelectromechanical mechanism 22 during this cutting, it is covered and protected by a glass plate 25 or the like. Has been.

そして、この電子部品24を、電子部品収納用の凹部Ａを有する電子部品収納用パッケージ（以下、パッケージともいう）31の凹部Ａ内に収納するとともに、電子部品24の電極23をパッケージ31の電極パッド32にボンディングワイヤ33等の導電性接続材を介して接続した後、パッケージ31の凹部Ａを蓋体34で覆って電子部品24を凹部Ａ内に気密封止することにより、電子装置として完成する。この場合、電子部品24は、微小電子機械機構22の動作を妨げないようにするため、中空状態で気密封止する必要がある。   The electronic component 24 is accommodated in a recess A of an electronic component storage package (hereinafter also referred to as a package) 31 having a recess A for storing the electronic component, and the electrode 23 of the electronic component 24 is connected to the electrode of the package 31. After connecting to the pad 32 through a conductive connecting material such as a bonding wire 33, the concave portion A of the package 31 is covered with a lid 34 and the electronic component 24 is hermetically sealed in the concave portion A, thereby completing an electronic device. To do. In this case, the electronic component 24 needs to be hermetically sealed in a hollow state so as not to hinder the operation of the microelectromechanical mechanism 22.

この電子装置について、あらかじめパッケージ31の電極パッド32から外表面に導出するようにして形成しておいた配線導体35の導出部分を外部電気回路に接続することにより、気密封止された微小電子機械機構22が、電極23，ボンディングワイヤ33，電極パッド32および配線導体35を介して外部電気回路と電気的に接続される。   For this electronic device, a microelectronic machine hermetically sealed by connecting a lead-out portion of the wiring conductor 35 formed in advance so as to lead out from the electrode pad 32 of the package 31 to an external electric circuit. The mechanism 22 is electrically connected to an external electric circuit through the electrode 23, the bonding wire 33, the electrode pad 32, and the wiring conductor 35.

また、このような電子部品24は、通常、広面積の半導体基板の主面に多数個を縦横に配列形成させることにより製作されており、この場合の電子装置の製造方法は、従来、以下のようなものであった。すなわち、半導体基板の主面に、微小電子機械機構22およびこれに電気的に接続された電極23が形成されて成る電子部品領域を多数個縦横に配列形成した電子部品を準備する工程１と、各電子部品24の微小電子機械機構22を、その周囲が中空状態となるようにして、ガラス板25等で覆って封止する工程２と、半導体基板にダイシング加工等の切断加工を施して、個々の電子部品24に分割する工程３と、個々の電子部品24を、パッケージ31内に気密封止する工程４と、により製作される。   In addition, such an electronic component 24 is usually manufactured by arranging a large number of elements in the main surface of a large-area semiconductor substrate vertically and horizontally, and a method for manufacturing an electronic device in this case is conventionally as follows. It was something like that. That is, a step 1 of preparing an electronic component in which a plurality of electronic component regions formed by forming a microelectromechanical mechanism 22 and an electrode 23 electrically connected to the microelectromechanical mechanism 22 on a main surface of a semiconductor substrate are arranged vertically and horizontally; The step 2 of sealing the micro electro mechanical mechanism 22 of each electronic component 24 with a glass plate 25 or the like so that the periphery thereof is in a hollow state, and cutting processing such as dicing processing on the semiconductor substrate, It is manufactured by the step 3 of dividing into individual electronic components 24 and the step 4 of hermetically sealing the individual electronic components 24 in the package 31.

このような従来の製造方法においては、半導体基板の主面に配列形成された多数の電子部品領域の１個ずつをガラス板25等で封止して保護しておく必要があること、また、一旦ガラス板25で封止した電子部品24を、個片の電子部品24に分割した後、改めてパッケージ31内に気密封止するとともに、その電極23をパッケージ31の電極パッド32等に接続して外部接続させる必要があること等のため、生産性が悪く、実用化が難しいという問題があった。   In such a conventional manufacturing method, it is necessary to seal and protect each of a large number of electronic component regions arranged on the main surface of the semiconductor substrate with a glass plate 25 or the like, The electronic component 24 once sealed with the glass plate 25 is divided into individual electronic components 24 and then hermetically sealed in the package 31 and the electrode 23 is connected to the electrode pad 32 and the like of the package 31. Due to the necessity of external connection, there was a problem that productivity was poor and practical application was difficult.

この問題に対し、半導体基板の主面に配列形成された多数個の微小電子機械機構22を一括して覆い、封止するような基板が提案されている。このような封止用の基板としては、半導体基板を材料とするものや導電性の金属板等を材料にするもの等が知られている。   To solve this problem, a substrate has been proposed in which a large number of microelectromechanical mechanisms 22 arrayed on the main surface of a semiconductor substrate are collectively covered and sealed. As such a sealing substrate, a substrate made of a semiconductor substrate, a substrate made of a conductive metal plate, or the like is known.

半導体基板を材料とする場合は、例えば、主面に多数個の電子部品領域が配列形成された第１の半導体基板とは別に、この電子部品領域の配列に対応させて多数の凹部を配列形成した封止用の第２の半導体基板を準備し、第１の半導体基板の主面上に第２の半導体基板を、第２の半導体基板の凹部が第１の半導体基板の電子部品領域を覆うようにして接合し、第２の半導体基板の内側に第１の半導体基板の電子部品領域（特に微小電子機械機構）を封止するようにした技術が提案されている（例えば、特許文献１参照）。   In the case of using a semiconductor substrate as a material, for example, apart from the first semiconductor substrate in which a large number of electronic component regions are arranged on the main surface, a large number of recesses are formed corresponding to the arrangement of the electronic component regions. The second semiconductor substrate for sealing is prepared, the second semiconductor substrate is covered on the main surface of the first semiconductor substrate, and the concave portion of the second semiconductor substrate covers the electronic component region of the first semiconductor substrate. Thus, a technique has been proposed in which the electronic component region (especially the microelectromechanical mechanism) of the first semiconductor substrate is sealed inside the second semiconductor substrate (see, for example, Patent Document 1). ).

また、導電性を有する金属板を材料とする場合には、導電性を有するカバー用の金属板にパターン溝を形成するとともに、このパターン溝をガラスやセラミック材料で充填して平坦化させた後、その上にボンディングパターン（電極パッド等）を形成し、このボンディングパターンに電子部品の電極を接続するとともに金属板を半導体基板の主面に接合し、その後、電子部品領域をセラミックやガラス等で封着するとともに、ボンディングパターンを外部に導出するための外部配線用電極パターンを形成するようにした技術が提案されている（例えば、特許文献２参照）。   When a conductive metal plate is used as a material, a pattern groove is formed in the conductive cover metal plate, and the pattern groove is filled with glass or a ceramic material and flattened. Then, a bonding pattern (electrode pad, etc.) is formed thereon, the electrodes of the electronic component are connected to the bonding pattern, and a metal plate is bonded to the main surface of the semiconductor substrate. Thereafter, the electronic component region is made of ceramic or glass, etc. A technique has been proposed in which an electrode pattern for external wiring is formed for sealing and for leading out a bonding pattern to the outside (see, for example, Patent Document 2).

また、微小電子機械機構、いわゆるＭＥＭＳ（Micro Electromechanical System）を形成した電子部品においては、近年、低電圧駆動かつ高速化が行われるようになってきており、電子部品の外部から侵入する高調波ノイズの影響を受けやすいと同時に、配線導体を伝播する信号に含まれる高調波ノイズが電子部品の外部に放出され易いものとなってきている。
特開2001−144117号公報 特開2002−43463号公報 In recent years, electronic components that form a micro electromechanical mechanism, so-called MEMS (Micro Electromechanical System), have been driven at low voltage and speeded up, and harmonic noise that enters from outside of the electronic components. At the same time, harmonic noise included in a signal propagating through the wiring conductor is likely to be emitted to the outside of the electronic component.
JP 2001-144117 A JP 2002-43463 A

しかしながら、上記従来の封止用基板を用いて半導体基板の主面の電子部品領域を封止する場合、多数個の電子部品領域を一括して封止することはできるものの、例えば、半導体基板を材料とした封止用基板の場合であれば、半導体基板の内部に３次元的な配線導体を形成することができないため、封止用の第２の半導体基板の、電子部品領域が配列形成された第１の半導体基板に接合される主面から対向する他方主面にかけて配線導体を導出することができず、電子部品の電極は、第１の半導体基板の主面に形成された電極の一部を封止部の外側に延出させるとともに、この延出部をボンディングワイヤを介してパッケージの電極パッドや外部電気回路に接続する必要がある。そのため、実装工程（電子部品領域の封止から電子装置として完成させて外部電気回路に接続するまでの工程）が長く、また、個々の電子装置のサイズが大きくなってしまうという問題があった。また、電子装置を組み込んだ電子システムの小型化に有利な表面実装ができないという問題もあった。   However, when the electronic component region on the main surface of the semiconductor substrate is sealed using the conventional sealing substrate, a large number of electronic component regions can be collectively sealed. In the case of the sealing substrate made of the material, since the three-dimensional wiring conductor cannot be formed inside the semiconductor substrate, the electronic component region of the second semiconductor substrate for sealing is arranged and formed. The wiring conductor cannot be led out from the main surface bonded to the first semiconductor substrate to the other main surface facing the first semiconductor substrate, and the electrode of the electronic component is one of the electrodes formed on the main surface of the first semiconductor substrate. It is necessary to extend the portion to the outside of the sealing portion and to connect the extended portion to an electrode pad of the package or an external electric circuit via a bonding wire. Therefore, the mounting process (the process from sealing the electronic component region to completing the electronic device and connecting it to the external electric circuit) is long, and there is a problem that the size of each electronic device is increased. There is also a problem that surface mounting that is advantageous for downsizing an electronic system incorporating an electronic device cannot be performed.

また、導電性の金属板等を材料とした封止用基板の場合、金属板に電極パッド等の導体パターンを形成することができるように、一旦ガラスやセラミックスで金属板の表面に形成したパターン溝等を埋めて絶縁部を形成したり、その絶縁部の表面に実装工程の途中で導体部を形成したりする必要があるため、この場合も電子部品の実装工程を短くすることが困難であるという問題があった。   In the case of a sealing substrate made of a conductive metal plate or the like, a pattern once formed on the surface of the metal plate with glass or ceramics so that a conductor pattern such as an electrode pad can be formed on the metal plate. In this case, it is difficult to shorten the mounting process of the electronic component because it is necessary to form an insulating part by filling a groove or the like, or to form a conductor part on the surface of the insulating part in the middle of the mounting process. There was a problem that there was.

さらに、微小電子機械機構（ＭＥＭＳ）を形成した電子部品においては、近年、低電圧駆動かつ高速化が行われるようになってきており、電子部品の外部から侵入する高調波ノイズの影響を受けやすいと同時に、配線導体を伝播する信号に含まれる高調波ノイズが電子部品の外部に放出され易いものとなってきていることから、電子部品の外部の近接位置にノイズ発生源があると絶縁基板に被着形成された配線導体を伝播する信号に電磁波ノイズが入り込み、微小電子機械機構に伝播されて誤動作させてしまう。また、電子部品の外部の近傍位置に電磁波ノイズに対して影響を受け易い電子機器等があると、電子部品より放出された電磁波ノイズがこの電子機器等に悪影響を及ぼすという問題があった。   Furthermore, in recent years, electronic components formed with micro-electromechanical mechanisms (MEMS) have been driven at a low voltage and speeded up, and are easily affected by harmonic noise entering from outside the electronic components. At the same time, harmonic noise contained in the signal propagating through the wiring conductor is becoming more likely to be emitted to the outside of the electronic component. Therefore, if there is a noise source outside the electronic component, the insulating substrate Electromagnetic wave noise enters the signal propagating through the deposited wiring conductor and propagates to the microelectromechanical mechanism, causing malfunction. In addition, when there is an electronic device or the like that is easily affected by electromagnetic noise at a position near the outside of the electronic component, there is a problem that the electromagnetic noise emitted from the electronic component has an adverse effect on the electronic device or the like.

本発明は上記従来の技術における諸問題に鑑みて完成されたものであり、その目的は、半導体基板の主面に形成された微小電子機械機構を容易かつ確実に封止することができるとともに、この微小電子機械機構と接続された半導体基板の主面に形成されている電極を容易かつ確実に、例えば表面実装が可能な形態で外部接続させることができ、かつ微小電子機械機構を形成した電子部品の外部から侵入する高調波ノイズの影響を受けにくいと同時に、配線導体を伝播する信号に含まれる高調波ノイズが電子部品の外部に放出されにくい電子部品封止用基板を提供することにある。   The present invention has been completed in view of the above-described problems in the prior art, and its purpose is to easily and reliably seal the microelectromechanical mechanism formed on the main surface of the semiconductor substrate, Electrodes formed on the main surface of the semiconductor substrate connected to the microelectromechanical mechanism can be externally connected easily and reliably, for example, in a form that can be surface-mounted, and the microelectromechanical mechanism is formed. To provide an electronic component sealing substrate that is not easily affected by harmonic noise entering from the outside of the component, and at the same time, the harmonic noise contained in the signal propagating through the wiring conductor is not easily emitted to the outside of the electronic component. .

また、本発明の他の目的は、このような微小電子機械機構および電極から成る電子部品領域が半導体基板の主面に多数個縦横に配列形成されていたとしても、これらを容易かつ確実に封止することが可能な封止用基板を提供するとともに、このような封止用基板を用いて、微小電子機械機構が封止されて成る多数個の電子装置を、例えば表面実装が可能な形態で一括して形成することが可能な電子装置の製造方法を提供することにある。   Another object of the present invention is to easily and surely seal even if a large number of electronic component regions composed of such micro-electromechanical mechanisms and electrodes are arranged vertically and horizontally on the main surface of the semiconductor substrate. The present invention provides a sealing substrate that can be stopped, and uses such a sealing substrate to form a large number of electronic devices in which a microelectromechanical mechanism is sealed, for example, in a surface mountable form. It is an object of the present invention to provide a method of manufacturing an electronic device that can be collectively formed.

本発明の電子部品封止用基板は、半導体基板と該半導体基板の表面に設けられた微小電子機械機構と前記表面に設けられるとともに前記微小電子機械機構に電気的に接続される電極とを有する電子部品の前記微小電子機械機構を封止するための電子部品封止用基板であって、一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続される接続端子と、前記絶縁基板の前記一方主面に形成された、前記微小電子機械機構を取り囲んで気密封止するための導電性枠状封止部と、該導電性枠状封止部に電気的に接続されて前記絶縁基板に形成された接地用貫通導体とを有し、前記接地用貫通導体は、複数形成されているとともに、それらの隣接間隔が前記電子部品で使用される高周波信号の波長の１／２以下である。 The electronic component sealing substrate of the present invention includes a semiconductor substrate, a microelectromechanical mechanism provided on the surface of the semiconductor substrate, and an electrode provided on the surface and electrically connected to the microelectromechanical mechanism. An electronic component sealing substrate for sealing the micro-electromechanical mechanism of an electronic component, wherein an insulating substrate on which a wiring conductor led out from one main surface to the other main surface or side surface is formed, and the insulating substrate is of the one formed on the main surface, the wiring conductor and electrically connected to Ru connection terminal, wherein formed on the one main surface of the insulating substrate, for hermetically sealing surrounding the microelectromechanical system and conductive frame-like sealing portion, and a electrically connected to the through conductor for grounding formed on the insulating substrate on the conductive frame-like sealing portion, the ground through-conductor, forming a plurality of And their adjacent spacing is Serial is below half the wavelength of the high frequency signals used in electronic components.

本発明の電子部品封止用基板は、上記構成において好ましくは、前記接地用貫通導体は、平面視して、前記微小電子機械機構を取り囲むように形成されている。また、上記構成において好ましくは、前記接地用貫通導体は、平面視して、前記電極の周辺を囲むように形成されている。また、上記構成において好ましくは、前記接続端子は、前記導電性枠状封止部の内側に形成されている。また、上記構成において好ましくは、前記接地用貫通導体は、前記絶縁基板の主面に垂直な直線部分を有する。また、上記構成において好ましくは、前記接続端子と前記配線導体との間に接続パッドが設けられ、前記導電性枠状封止部と前記接地用貫通導体との間に導体層が設けられている。さらに、前記接続端子と前記配線導体との間に接続パッドが設けられ、前記導電性枠状封止部と前記接地用貫通導体との間に導体層が設けられた上記構成において好ましくは、前記接続パッドと前記導体層は同一の材料からなる。また、上記構成において好ましくは、前記接続端子と前記導電性枠状封止部とが多数個縦横に配列形成されている。 In the electronic component sealing substrate according to the present invention, preferably, the grounding through conductor is formed so as to surround the microelectromechanical mechanism in a plan view. In the above configuration, the grounding through conductor is preferably formed so as to surround the periphery of the electrode in plan view. In the above configuration, preferably, the connection terminal is formed inside the conductive frame-shaped sealing portion. In the above configuration, preferably, the grounding through conductor has a straight portion perpendicular to the main surface of the insulating substrate. In the above configuration, a connection pad is preferably provided between the connection terminal and the wiring conductor, and a conductor layer is provided between the conductive frame-shaped sealing portion and the grounding through conductor. . Furthermore, in the above configuration in which a connection pad is provided between the connection terminal and the wiring conductor, and a conductor layer is provided between the conductive frame-shaped sealing portion and the grounding through conductor, The connection pad and the conductor layer are made of the same material. Further, in the above configuration, preferably, a plurality of the connection terminals and the conductive frame-shaped sealing portions are arranged vertically and horizontally.

本発明の電子装置は、半導体基板と該半導体基板の表面に設けられた微小電子機械機構と前記表面に設けられるとともに前記微小電子機械機構に電気的に接続される電極とを有する電子部品と、 一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、前記電極と前記配線導体とを電気的に接続する接続端子と、前記半導体基板と前記絶縁基板との間で前記微小電子機械機構を取り囲んで気密封止する導電性枠状封止部と、前記絶縁基板に形成された、前記導電性枠状封止部に電気的に接続される接地用貫通導体とを有する。そして、前記接地用貫通導体は、複数形成されているとともに、それらの隣接間隔が前記電子部品で使用される高周波信号の波長の１／２以下である。また、上記構成において好ましくは、前記接地用貫通導体は、平面視して、前記微小電子機械機構を取り囲むように形成されている。また、上記構成において好ましくは、前記接地用貫通導体は、平面視して、前記電極の周辺を囲むように形成されている。また、上記構成において好ましくは、前記接続端子は、前記導電性枠状封止部の内側に形成されている。また、上記構成において好ましくは、前記接地用貫通導体は、前記絶縁基板の主面に垂直な直線部分を有する。An electronic device of the present invention includes a semiconductor substrate, a microelectromechanical mechanism provided on the surface of the semiconductor substrate, and an electronic component provided on the surface and electrically connected to the microelectromechanical mechanism; An insulating substrate on which a wiring conductor led out from one main surface to the other main surface or side surface is formed; a connection terminal for electrically connecting the electrode and the wiring conductor; and between the semiconductor substrate and the insulating substrate A conductive frame-shaped sealing portion that surrounds the micro-electromechanical mechanism and hermetically seals, and a grounding through conductor that is electrically connected to the conductive frame-shaped sealing portion formed on the insulating substrate. Have A plurality of the grounding through conductors are formed, and their adjacent interval is equal to or less than ½ of the wavelength of the high-frequency signal used in the electronic component. Preferably, in the above configuration, the grounding through conductor is formed so as to surround the microelectromechanical mechanism in a plan view. In the above configuration, the grounding through conductor is preferably formed so as to surround the periphery of the electrode in plan view. In the above configuration, preferably, the connection terminal is formed inside the conductive frame-shaped sealing portion. In the above configuration, preferably, the grounding through conductor has a straight portion perpendicular to the main surface of the insulating substrate.

本発明の電子装置の製造方法は、半導体基板の表面に、微小電子機械機構およびこれに電気的に接続された電極を有する電子部品領域を多数個縦横に配列形成した電子部品を準備する工程と、一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続される接続端子と、前記絶縁基板の前記一方主面に形成された、前記微小電子機械機構を取り囲んで気密封止するための導電性枠状封止部と、該導電性枠状封止部に電気的に接続されて前記絶縁基板に形成された接地用貫通導体とを有し、前記接地用貫通導体は、複数形成されているとともに、それらの隣接間隔が前記電子部品で使用される高周波信号の波長の１／２以下である電子部品封止領域を多数個前記電子部品の前記電子部品領域に対応させて配列形成した電子部品封止用基板を準備する工程と、前記電子部品を、前記電極を前記接続端子に接合するとともに、前記微小電子機械機構の周囲の前記半導体基板の前記表面を前記導電性枠状封止部に接合して、前記微小電子機械機構を前記導電性枠状封止部の内側に気密封止する工程と、互いに接合された前記電子部品および前記電子部品封止用基板を前記電子部品封止領域毎に分割して、前記電子部品封止領域に前記電子部品領域が接合された個々の電子装置を得る工程とを具備する。 The method of manufacturing an electronic device according to the present invention includes a step of preparing an electronic component in which a plurality of electronic component regions having a microelectromechanical mechanism and electrodes electrically connected thereto are arranged in a vertical and horizontal direction on a surface of a semiconductor substrate. , whereas the insulating substrate on which a wiring conductor is formed which is derived on the other major surface or side from the main surface, formed on the one main surface of the insulating substrate, and a connection terminal that will be the wiring conductors electrically connected A conductive frame-shaped sealing portion formed on the one main surface of the insulating substrate for hermetically sealing the micro-electromechanical mechanism, and electrically connected to the conductive frame-shaped sealing portion And a plurality of the grounding through conductors are formed, and the adjacent interval is one of the wavelengths of the high-frequency signal used in the electronic component. electronic component sealing region is / 2 or less A step of preparing a substrate for encapsulating electronic components arranged corresponding to the electronic component region of the plurality of electronic components; joining the electrodes to the connection terminals; and the microelectromechanical mechanism Bonding the surface of the semiconductor substrate around the substrate to the conductive frame-shaped sealing portion and hermetically sealing the microelectromechanical mechanism inside the conductive frame-shaped sealing portion ; the electronic component and the electronic component sealing substrate is divided into each of the electronic component sealing region, and a step of obtaining individual electronic device the electronic component region is joined to the electronic component sealing region To do .

本発明の電子部品封止用基板は、半導体基板と該半導体基板の表面に設けられた微小電子機械機構とその表面に設けられるとともに微小電子機械機構に電気的に接続される電極とを有する電子部品の微小電子機械機構を封止するための電子部品封止用基板であって、一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、配線導体と電気的に接続される接続端子と、絶縁基板の一方主面に形成された、前記微小電子機械機構を取り囲んで気密封止するための導電性枠状封止部と、該導電性枠状封止部に電気的に接続されて絶縁基板に形成された接地用貫通導体とを有し、接地用貫通導体は、複数形成されているとともに、それらの隣接間隔が電子部品で使用される高周波信号の波長の１／２以下であることから、導電性枠状封止部を半導体基板の表面に接合させるだけで、電子部品の微小電子機械機構を、導電性枠状封止部と絶縁基板とにより容易かつ確実に封止することができる。 An electronic component sealing substrate of the present invention is an electron having a semiconductor substrate, a microelectromechanical mechanism provided on the surface of the semiconductor substrate, and an electrode provided on the surface and electrically connected to the microelectromechanical mechanism. An electronic component sealing substrate for sealing a microelectromechanical mechanism of a component, wherein an insulating substrate on which a wiring conductor led out from one main surface to the other main surface or side surface is formed, and the insulating substrate A connection terminal electrically connected to the wiring conductor formed on one main surface, and a conductive frame formed on one main surface of the insulating substrate for hermetically sealing the micro-electromechanical mechanism. A sealing portion and a grounding through conductor that is electrically connected to the conductive frame-shaped sealing portion and formed on the insulating substrate. High frequency signal with adjacent spacing used in electronic components Since it is less than half a wavelength of, simply by joining the conductive frame-like sealing portion on the surface of the semiconductor substrate, the micro electronic mechanical system of an electronic component, the conductive frame-like sealing portion and the insulating substrate Can be easily and reliably sealed.

また、導電性枠状封止部の表面の高さが、接続パッド上に形成された接続端子の高さと同じである場合には、導電性枠状封止部の表面を半導体基板の表面に接合するときに、半導体基板の表面に形成されている電極を接続端子に容易かつ確実に接続することができる。また、この接続端子から接続パッドおよび配線導体を介して、電子部品の電極を外部に導出することもできる。 The height of the conductive frame-like sealing portion of the surface, if it is same as the height of the formed connection terminals on the connection pad, the surface of the conductive frame-like sealing portion on the surface of the semiconductor substrate When joining, the electrode formed on the surface of the semiconductor substrate can be easily and reliably connected to the connection terminal. Moreover, the electrode of an electronic component can also be derived | led-out outside from this connection terminal via a connection pad and a wiring conductor.

また、本発明の電子部品封止用基板は、例えば、セラミック多層配線基板等の絶縁基板を用いて形成したものとすることにより、配線導体を、接続パッドや枠部材が形成され接合されている一方主面から他方主面や側面にかけて、基板の内部や表面に自由に形成して導出させることができ、この導出された端部に外部接続用の金属バンプを取着させること等により、容易に表面実装することが可能な電子装置として完成させることができる。   Further, the electronic component sealing substrate of the present invention is formed by using an insulating substrate such as a ceramic multilayer wiring substrate, for example, so that the wiring conductor is bonded to the connection pad or the frame member. From one main surface to the other main surface or side surface, it can be freely formed on the inside or surface of the substrate and led out, and by attaching metal bumps for external connection to this derived end, etc. It can be completed as an electronic device that can be surface-mounted.

さらに、導電性枠状封止部と電気的に接続された接地用貫通導体を絶縁基板に設けたことから、安定したグランドネットワークが形成できるので、良好なシールド性を得ることができる。よって、微小電子機械機構を形成した電子部品の外部から侵入する高調波ノイズを有効に除去することができ、電子部品等を正常かつ安定に作動させるとともに、配線導体を伝播する信号に含まれる高調波ノイズが電子部品の外部に対して放出されにくい電子部品封止用基板を提供することができる。 Further, since the grounding through conductor electrically connected to the conductive frame-shaped sealing portion is provided on the insulating substrate, a stable ground network can be formed, and thus good shielding properties can be obtained. Therefore, it is possible to effectively remove harmonic noise that enters from the outside of the electronic component that forms the microelectromechanical mechanism, to operate the electronic component etc. normally and stably, and to include harmonics included in the signal propagating through the wiring conductor. An electronic component sealing substrate in which wave noise is less likely to be emitted to the outside of the electronic component can be provided.

また、本発明の電子部品封止用基板において、接地用貫通導体は、複数形成されているとともに、それらの隣接間隔が電子部品で使用される高周波信号の波長の１／２以下であることから、高周波グランドの不安定性から誘発される伝播モードのミスマッチが軽減される。また、導電性枠状封止部と接地用貫通導体が直接電気的に接続されているため、グランドネットワーク経路が短くなり、インダクタンス成分の増大を防ぐことができるので安定した接地状態を構成することができ、良好な電磁シールド性を保持することができる。よって、微小電子機械機構を形成した電子部品の外部から侵入する高調波ノイズの影響を受けにくいと同時に、配線導体を伝播する信号に含まれる高調波ノイズが電子部品の外部に放出されにくい電子部品封止用基板を得ることができる。 Further, in the electronic component sealing substrate of the present invention , a plurality of grounding through conductors are formed, and their adjacent interval is 1/2 or less of the wavelength of the high-frequency signal used in the electronic component. Propagation mode mismatch induced by high frequency ground instability is reduced. In addition, since the conductive frame-shaped sealing portion and the grounding through conductor are directly electrically connected, the ground network path is shortened, and an increase in inductance component can be prevented, so that a stable grounding state is configured. And good electromagnetic shielding properties can be maintained. Therefore, an electronic component that is not easily affected by harmonic noise that enters from the outside of the electronic component that forms the microelectromechanical mechanism, and at the same time, that the harmonic noise included in the signal propagating through the wiring conductor is not easily emitted to the outside of the electronic component. A sealing substrate can be obtained.

また、本発明の電子部品封止用基板において好ましくは、前記接続端子と前記導電性枠状封止部とが多数個縦横に配列形成した場合には、半導体基板の表面に多数の電子部品領域が縦横に配列形成されていたとしても、これらを一括して外部接続が可能なようにして封止することができる。 Further, in the electronic component sealing substrate of the present invention, preferably, when a large number of the connection terminals and the conductive frame-shaped sealing portions are arranged vertically and horizontally, a large number of electronic component regions are formed on the surface of the semiconductor substrate. Can be sealed so that they can be externally connected together even if they are arranged vertically and horizontally.

本発明の電子装置の製造方法は、上記各工程を具備することから、互いに接合された電子部品および電子部品封止用基板から成る電子装置を、容易かつ確実に多数個製造することができる。また、互いに接合された電子部品および電子部品封止用基板を電子部品封止領域毎に分割することにより、電子部品封止領域に電子部品領域が接合されて成る個々の電子装置を多数個同時に製造することができる。この分割の際、電子部品領域の微小電子機械機構は封止用基板により封止されているので、ダイシング加工等による分割で発生するシリコン等の半導体基板の切削粉が微小電子機械機構に付着するようなことはなく、分割後の電子装置において微小電子機械機構を確実に作動させることができる。 Since the method for manufacturing an electronic device according to the present invention includes the steps described above , a large number of electronic devices each including an electronic component and an electronic component sealing substrate bonded to each other can be manufactured easily and reliably. In addition, by dividing the electronic component and the electronic component sealing substrate bonded to each other into each electronic component sealing region, a large number of individual electronic devices formed by bonding the electronic component region to the electronic component sealing region can be simultaneously performed. Can be manufactured. At the time of this division, the micro electro mechanical mechanism in the electronic component region is sealed by the sealing substrate, so that the cutting powder of the semiconductor substrate such as silicon generated by the division by the dicing process adheres to the micro electro mechanical mechanism. There is no such thing, and the micro electromechanical mechanism can be operated reliably in the electronic device after the division.

また、分割して得られた電子装置は、絶縁基板の他方主面や側面に配線導体が導出されているので、この導出された端部に金属バンプ等の端子を取着するだけで、表面実装等により外部電気回路基板に実装することができるものとなり、実装の工程を非常に短く、かつ容易なものとすることができる電子装置となる。   Moreover, since the wiring conductor is led out to the other main surface or side surface of the insulating substrate, the electronic device obtained by dividing the surface can be obtained by simply attaching a terminal such as a metal bump to the lead end. The electronic device can be mounted on the external electric circuit board by mounting or the like, and the mounting process can be made extremely short and easy.

本発明の電子部品封止用基板およびそれを用いた電子装置の製造方法について以下に詳細に説明する。図１は本発明の電子部品封止用基板の実施の形態の一例を示す断面図である。図１において、１は絶縁基板、２は配線導体、３は接続パッド、４は枠部材、５は接続端子である。これら絶縁基板１，配線導体２，接続パッド３，枠部材４，接続端子５および接地用貫通導体12により電子部品封止用基板６が基本的に構成される。   The electronic component sealing substrate of the present invention and an electronic device manufacturing method using the same will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of an electronic component sealing substrate of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 4 is a frame member, and 5 is a connection terminal. The insulating substrate 1, the wiring conductor 2, the connection pad 3, the frame member 4, the connection terminal 5, and the grounding through conductor 12 basically constitute the electronic component sealing substrate 6.

この電子部品封止用基板６を用いて、半導体基板７の主面（図１の例では下面）に、微小電子機械機構８と電極９とを互いに電気的に接続するようにして形成して成る電子部品10を封止することにより、微小電子機械機構８が外部接続可能な状態で封止されてなる電子装置が形成される。   The electronic component sealing substrate 6 is used to form a microelectromechanical mechanism 8 and an electrode 9 on the main surface (lower surface in the example of FIG. 1) of the semiconductor substrate 7 so as to be electrically connected to each other. By sealing the electronic component 10 formed, an electronic device is formed in which the microelectromechanical mechanism 8 is sealed in a state where it can be externally connected.

本実施の形態における微小電子機械機構８は、例えば電気スイッチ，インダクタ，キャパシタ，共振器，アンテナ，マイクロリレー，光スイッチ，ハードディスク用磁気ヘッド，マイク，バイオセンサー，DNAチップ，マイクロリアクタ，プリントヘッド，加速度センサ，圧力センサなどの各種センサ、ディスプレイデバイスなどの機能を有する電子装置であり、半導体微細加工技術を基本としたいわゆるマイクロマシニング法で作る部品であり、１素子あたり１０μm〜数百μm程度の寸法を有する。 The micro electro mechanical mechanism 8 in the present embodiment includes, for example, an electric switch, an inductor, a capacitor, a resonator, an antenna, a micro relay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, a microreactor, a print head, and an acceleration. It is an electronic device having functions of various sensors such as sensors and pressure sensors, display devices, etc., and is a part made by a so-called micromachining method based on a semiconductor microfabrication technique, and has a size of about 10 μm to several hundred μm per element. Have

絶縁基板１は、微小電子機械機構８を封止するための蓋体として機能するとともに、配線導体２，接続パッド３，枠部材４，接続端子５および接地用貫通導体12を形成するための基体として機能する。   The insulating substrate 1 functions as a lid for sealing the microelectromechanical mechanism 8 and is a base for forming the wiring conductor 2, the connection pad 3, the frame member 4, the connection terminal 5, and the grounding through conductor 12. Function as.

この絶縁基板１は、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体，ムライト質焼結体，炭化珪素質焼結体，窒化珪素質焼結体，ガラスセラミックス焼結体等のセラミックス材料や、ポリイミド，ガラスエポキシ樹脂等の有機樹脂材料、セラミックスやガラス等の無機粉末をエポキシ樹脂等の有機樹脂で結合して成る複合材等により形成される。   The insulating substrate 1 includes ceramic materials such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, and a glass ceramic sintered body. It is formed of an organic resin material such as polyimide or glass epoxy resin, or a composite material formed by bonding inorganic powder such as ceramics or glass with an organic resin such as epoxy resin.

絶縁基板１は、例えば、酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウムとガラス粉末等の原料粉末をシート上に成形して成るグリーンシートを積層し、焼成することにより形成される。なお、絶縁基板１は、酸化アルミニウム質焼結体で形成するものに限らず、用途や気密封止する電子部品10の特性等に応じて適したものを選択することが好ましい。   If the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, the insulating substrate 1 is formed by laminating and baking a green sheet formed by forming aluminum oxide and a raw material powder such as glass powder on the sheet. . Note that the insulating substrate 1 is not limited to being formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the purpose and the characteristics of the electronic component 10 to be hermetically sealed.

例えば、絶縁基板１は、後述するように、枠部材４を介して半導体基板７と機械的に接合されるので、半導体基板７との接合の信頼性、つまり微小電子機械機構８の封止の気密性を高くするためには、ムライト質焼結体または例えばガラス成分の種類や添加量を調整することにより熱膨張係数を半導体基板７に近似させるようにした酸化アルミニウム−ホウ珪酸ガラス系等のガラスセラミックス焼結体等のような、半導体基板７との熱膨張係数の差が小さい材料で形成することが好ましい。   For example, since the insulating substrate 1 is mechanically bonded to the semiconductor substrate 7 via the frame member 4 as will be described later, the reliability of bonding with the semiconductor substrate 7, that is, the sealing of the micro electro mechanical mechanism 8 is achieved. In order to increase the airtightness, a mullite sintered body or an aluminum oxide-borosilicate glass system in which the thermal expansion coefficient is approximated to that of the semiconductor substrate 7 by adjusting the kind and addition amount of the glass component, for example. It is preferable to form a material having a small difference in thermal expansion coefficient from the semiconductor substrate 7 such as a glass ceramic sintered body.

また、絶縁基板１は、配線導体２により伝送される電気信号の遅延を防止するような場合には、ポリイミド，ガラスエポキシ樹脂等の有機樹脂材料、セラミックスやガラス等の無機粉末をエポキシ樹脂等の有機樹脂で結合して成る複合材、または、酸化アルミニウム−ホウ珪酸ガラス系や酸化リチウム系等のガラスセラミックス焼結体等のような比誘電率の小さい材料で形成することが好ましい。   Further, in the case of preventing the delay of the electrical signal transmitted by the wiring conductor 2, the insulating substrate 1 is made of an organic resin material such as polyimide or glass epoxy resin, or an inorganic powder such as ceramic or glass such as epoxy resin. It is preferably formed of a composite material formed by bonding with an organic resin, or a material having a low relative dielectric constant such as a sintered glass ceramic such as aluminum oxide-borosilicate glass or lithium oxide.

また、絶縁基板１は、封止する微小電子機械機構８の発熱量が大きく、この熱の外部への放散性を良好とするような場合には、窒化アルミニウム質焼結体等のような熱伝導率の大きな材料で形成することが好ましい。   Further, the insulating substrate 1 has a large calorific value of the microelectromechanical mechanism 8 to be sealed, and in the case where the heat dissipating property is good, a heat such as an aluminum nitride sintered body is used. It is preferable to form with a material having high conductivity.

また、絶縁基板１の一方主面に、電子部品10の微小電子機械機構８を内側に収めるような凹部１ａを形成しておいてもよい。凹部１ａ内に微小電子機械機構８の一部を収めるようにしておくと、微小電子機械機構８を取り囲むための枠部材４の高さを低く抑えることができ、電子装置の低背化に有利なものとなる。   Further, a concave portion 1a may be formed on one main surface of the insulating substrate 1 so as to accommodate the microelectromechanical mechanism 8 of the electronic component 10 inside. If a part of the micro electro mechanical mechanism 8 is accommodated in the recess 1a, the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low, which is advantageous for reducing the height of the electronic device. It will be something.

絶縁基板１の一方主面（微小電子機械機構８を封止する側）からは、他方主面または側面に配線導体２および接地用貫通導体12が導出されている。また、絶縁基板１の一方主面側の枠部材４の内側の部位には、配線導体２と接続された接続パッド３が形成されている。これらの配線導体２および接続パッド３は、接続パッド３上に形成される接続端子５を介して電子部品10の電極９と電気的に接続され、これを絶縁基板１の他方主面や側面に導出する機能を有する。   A wiring conductor 2 and a grounding through conductor 12 are led out from one main surface of the insulating substrate 1 (side on which the micro electro mechanical mechanism 8 is sealed) to the other main surface or side surface. In addition, a connection pad 3 connected to the wiring conductor 2 is formed in a portion inside the frame member 4 on the one main surface side of the insulating substrate 1. The wiring conductor 2 and the connection pad 3 are electrically connected to the electrode 9 of the electronic component 10 through the connection terminal 5 formed on the connection pad 3, and this is connected to the other main surface or side surface of the insulating substrate 1. It has a function to derive.

これらの配線導体２、接続パッド３および接地用貫通導体12は、銅，銀，金，パラジウム，タングステン，モリブデン，マンガン等の金属材料により形成される。この形成の手段としては、メタライズ層，めっき層，蒸着膜等として形成する手段、すなわち金属を薄膜層として被着させる手段等を用いることができる。例えば、タングステンのメタライズ層から成る場合であれば、タングステンのペーストを絶縁基板１となるグリーンシートに印刷してこれをグリーンシートとともに焼成することにより形成される。   The wiring conductor 2, the connection pad 3, and the grounding through conductor 12 are formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, or manganese. As this formation means, a means for forming as a metallized layer, a plating layer, a vapor deposition film or the like, that is, a means for depositing a metal as a thin film layer, or the like can be used. For example, in the case of a tungsten metallized layer, it is formed by printing a tungsten paste on a green sheet to be the insulating substrate 1 and firing it together with the green sheet.

接続端子５は、錫−銀系，錫−銀−銅系等の半田、金−錫ろう等の低融点ろう材、銀−ゲルマニウム系等の高融点ろう材、導電性有機樹脂、あるいはシーム溶接，電子ビーム溶接等の溶接法による接合を可能とするような金属材料等により形成されている。   The connection terminal 5 is made of solder such as tin-silver, tin-silver-copper, low melting point solder such as gold-tin solder, high melting point solder such as silver-germanium, conductive organic resin, or seam welding. , Formed of a metal material or the like that can be joined by a welding method such as electron beam welding.

この接続端子５を電子部品10の電極９に接合することにより、電子部品10の電極９が、接続端子５，接続パッド３および配線導体２を介して、絶縁基板１の他方主面または側面に導出される。そして、この導出された端部を外部電気回路に錫−鉛半田等を介して接合することにより、電子部品10の電極９が外部電気回路と電気的に接続される。   By joining the connection terminal 5 to the electrode 9 of the electronic component 10, the electrode 9 of the electronic component 10 is connected to the other main surface or side surface of the insulating substrate 1 via the connection terminal 5, the connection pad 3 and the wiring conductor 2. Derived. And the electrode 9 of the electronic component 10 is electrically connected to the external electric circuit by joining the derived end portion to the external electric circuit via tin-lead solder or the like.

また、絶縁基板１の一方主面には、接続パッド３を取り囲むようにして導電体から成る枠部材４が接合されている。枠部材４は、電子部品10の微小電子機械機構８をその内側に気密封止するための側壁として機能する。この枠部材４の主面（図１の例では上面）を電子部品10の主面（図１の例では下面）に接合させることにより、枠部材４の内側に微小電子機械機構８が気密封止される。なお、この場合、半導体基板７が底板となり、絶縁基板１が蓋体となる。   Further, a frame member 4 made of a conductor is joined to one main surface of the insulating substrate 1 so as to surround the connection pad 3. The frame member 4 functions as a side wall for hermetically sealing the microelectromechanical mechanism 8 of the electronic component 10 inside thereof. By joining the main surface (upper surface in the example of FIG. 1) of the frame member 4 to the main surface (lower surface in the example of FIG. 1) of the electronic component 10, the micro electromechanical mechanism 8 is hermetically sealed inside the frame member 4. Stopped. In this case, the semiconductor substrate 7 serves as a bottom plate and the insulating substrate 1 serves as a lid.

枠部材４は、鉄−ニッケル−コバルト合金や鉄−ニッケル合金等の鉄−ニッケル系合金，無酸素銅，アルミニウム，ステンレス鋼，銅−タングステン合金，銅−モリブデン合金等の金属材料から成る。また、枠部材４は、酸化アルミニウム質焼結体，ガラスセラミックス焼結体等の無機系材料、あるいはＰＴＦＥ（ポリテトラフルオロエチレン），ガラスエポキシ樹脂等の有機樹脂系材料等から成り、その表面にＡｕ，Ａｇ，Ｃｕ，Ａｌ，Ｐｔ，Ｐｄ等の金属層をめっき法等で形成した導電性被膜を形成したものであってもよい。   The frame member 4 is made of a metal material such as an iron-nickel alloy such as an iron-nickel-cobalt alloy or an iron-nickel alloy, oxygen-free copper, aluminum, stainless steel, a copper-tungsten alloy, or a copper-molybdenum alloy. The frame member 4 is made of an inorganic material such as an aluminum oxide sintered body or a glass ceramic sintered body, or an organic resin material such as PTFE (polytetrafluoroethylene) or glass epoxy resin. A conductive film in which a metal layer such as Au, Ag, Cu, Al, Pt, or Pd is formed by a plating method or the like may be formed.

また、枠部材４の主面を電子部品10の半導体基板７の主面に接合する方法としては、錫−銀系等の半田，金−錫ろう等の低融点ろう材，銀−ゲルマニウム系等の高融点ろう材，導電性有機樹脂等の接合材を介して接合する方法、あるいはシーム溶接，電子ビーム溶接等の溶接法を用いることができる。   Further, as a method for joining the main surface of the frame member 4 to the main surface of the semiconductor substrate 7 of the electronic component 10, solder such as tin-silver type, low melting point brazing material such as gold-tin brazing, silver-germanium type, etc. It is possible to use a bonding method such as a high melting point brazing material, a conductive organic resin, or a welding method such as seam welding or electron beam welding.

そして、半導体基板７の主面に微小電子機械機構８およびこれに電気的に接続された電極９が形成されて成る電子部品10について、電極９を接続端子５に接合し、半導体基板７の主面を枠部材４の主面に接合させることによって、枠部材４の内側に電子部品10の微小電子機械機構８が気密封止された電子装置が形成される。   Then, with respect to the electronic component 10 in which the microelectromechanical mechanism 8 and the electrode 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7, the electrode 9 is joined to the connection terminal 5. By joining the surface to the main surface of the frame member 4, an electronic device in which the microelectromechanical mechanism 8 of the electronic component 10 is hermetically sealed inside the frame member 4 is formed.

また、枠部材４が接合される絶縁基板１の一方主面に、接続パッド３と同様の材料により導体層３ａを形成し、この導体層３ａから絶縁基板１の他方主面にかけて枠部材４と電気的に接続された接地用貫通導体12が導出されている。この構成により、安定したグランドネットワークが形成できるため、良好な電磁シールド性を得ることができ、微小電子機械機構８を形成した電子部品10に外部から侵入する高調波ノイズを有効に除去することが可能となり、電子部品10等を正常かつ安定に作動させるとともに、配線導体２を伝播する信号に含まれる高調波ノイズが電子部品10の外部に対して放出されにくい電子部品封止用基板６を提供することができる。   In addition, a conductor layer 3a is formed on one main surface of the insulating substrate 1 to which the frame member 4 is bonded by the same material as the connection pad 3, and the frame member 4 extends from the conductor layer 3a to the other main surface of the insulating substrate 1. An electrically connected grounding through conductor 12 is led out. With this configuration, since a stable ground network can be formed, good electromagnetic shielding properties can be obtained, and harmonic noise that enters the electronic component 10 in which the microelectromechanical mechanism 8 is formed can be effectively removed. Provided is an electronic component sealing substrate 6 that enables electronic components 10 and the like to operate normally and stably, and that harmonic noise included in a signal propagating through the wiring conductor 2 is less likely to be emitted to the outside of the electronic component 10. can do.

さらに、好ましくは、枠部材４と電気的に接続された複数の接地用貫通導体12の隣接間隔が電子部品10で使用される高周波信号（数百ＭＨｚ〜１００ＧＨｚ程度で特にはＧＨｚ帯域の高周波信号）の波長の１／２以下であることから、高周波グランドの不安定性から誘発される伝播モードのミスマッチが軽減される。また、導電体から成る枠部材と接地用貫通導体が直接、電気的に接続されているため、グランドネットワーク経路が短くなり、インダクタンス成分の増大を防ぐことができるので安定した接地状態とすることができ、良好な電磁シールド性を保持することができる。よって、微小電子機械機構８を形成した電子部品10が外部から侵入する高調波ノイズの影響を受けにくくなる同時に、配線導体２を伝播する信号に含まれる高調波ノイズが電子部品10の外部に放出されにくい電子部品封止用基板６を得ることができる。   Further, preferably, a plurality of grounding through conductors 12 electrically connected to the frame member 4 are adjacent to each other with a high frequency signal used in the electronic component 10 (high frequency signal of about several hundred MHz to 100 GHz, particularly in the GHz band). ), The propagation mode mismatch induced by the instability of the high-frequency ground is reduced. In addition, since the frame member made of a conductor and the grounding through conductor are directly electrically connected, the ground network path is shortened and an increase in inductance component can be prevented, so that a stable grounding state can be obtained. And good electromagnetic shielding properties can be maintained. Therefore, the electronic component 10 in which the microelectromechanical mechanism 8 is formed is not easily affected by the harmonic noise entering from the outside, and at the same time, the harmonic noise included in the signal propagating through the wiring conductor 2 is emitted to the outside of the electronic component 10. The electronic component sealing substrate 6 that is difficult to be formed can be obtained.

従って、電子部品10には常に正確な信号が配線導体２を介して伝播されることとなり、高速駆動される電子部品10を正常かつ安定に作動させることが可能となるとともに、本実施の形態による電子部品封止用基板６が使用された電子部品10は外部に対して電磁波ノイズを放出することもない。 Thus, always the correct signal is propagated through the wiring conductor 2 in the electronic component 10, it becomes possible to operate the electronic components 10 to be fast driven normally and stably, in accordance with the embodiment The electronic component 10 using the electronic component sealing substrate 6 does not emit electromagnetic noise to the outside.

本発明において、複数の接地用貫通導体12は、絶縁基板１に微小電子機械機構８を取り囲むように形成されていることが好ましい。これにより、微小電子機械機構８に対してより良好な電気的な電磁シールド壁を形成することができる。また、複数の接地用貫通導体12は、少なくとも微小電子機械機構８が接続される電極９の周辺を囲むように形成されているのがよい。この場合、高周波信号が微小電子機械機構８に入出力される電極９の周辺を、複数の接地用貫通導体12で重点的に囲むことで、外部から侵入する高調波ノイズの影響を有効に抑制することができる。   In the present invention, the plurality of grounding through conductors 12 are preferably formed on the insulating substrate 1 so as to surround the microelectromechanical mechanism 8. Thereby, a better electrical electromagnetic shield wall can be formed for the micro electro mechanical mechanism 8. The plurality of grounding through conductors 12 are preferably formed so as to surround at least the periphery of the electrode 9 to which the micro electromechanical mechanism 8 is connected. In this case, the influence of harmonic noise entering from the outside is effectively suppressed by enclosing the periphery of the electrode 9 through which a high-frequency signal is input / output to / from the microelectromechanical mechanism 8 with a plurality of grounding through conductors 12. can do.

上記の構成の電子部品10を有する本実施の形態の電子装置は、配線導体２および接地用貫通導体12の導出部分を、半田ボール等の外部端子11を介して外部電気回路に接続することにより、微小電子機械機構８が外部電気回路と電気的に接続される。
この場合、接続端子５と電極９との接合、および枠部材４の主面と半導体基板７の主面との接合を一つの工程で確実かつ容易に行なうことを可能とするために、接続端子５の高さと枠部材４の高さとは同じ高さとしておく必要がある。 In the electronic device of the present embodiment having the electronic component 10 having the above-described configuration, the lead portions of the wiring conductor 2 and the grounding through conductor 12 are connected to an external electric circuit via an external terminal 11 such as a solder ball. The microelectromechanical mechanism 8 is electrically connected to an external electric circuit.
In this case, in order to enable the bonding of the connection terminal 5 and the electrode 9 and the bonding of the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 to be performed reliably and easily in one step, the connection terminal The height of 5 and the height of the frame member 4 need to be the same height.

また、本実施の形態の電子部品封止用基板６は、
図２に実施の形態の他の例を断面図で示すように、接続パッド３および枠部材４を広面積の母基板の一方主面に縦横に配列形成した、いわゆる多数個取りの形態としておくことが好ましい。
なお、図２において、図１と同じ部位には同じ符号を付してある。 The electronic component sealing substrate 6 of the present embodiment is
As shown in a cross-sectional view in FIG. 2 as another example of the embodiment, the connection pads 3 and the frame members 4 are arranged so as to be vertically and horizontally arranged on one main surface of a large-area mother board. It is preferable.
In FIG. 2, the same parts as those in FIG.

このような多数個取りの形態としておくと、半導体基板７の主面に微小電子機械機構８およびこれに電気的に接続された電極９が多数個配列形成された、多数個取りの形態で製作される電子部品10を、多数個同時に気密封止することができ、生産性に優れたものとすることができる。また、半導体基板７の主面に微小電子機械機構８およびこれに電気的に接続された電極９が多数個配列形成された、多数個取りの形態で製作される電子部品10を一括して封止しておくと、半導体基板７（および電子部品封止用基板６）にダイシング加工等の切断加工を施して、個々の電子部品10（電子装置）に分割する際に、切断に伴って発生する切削粉等が微小電子機械機構８に付着してその作動を妨害するという不具合の発生を効果的に防止することができる。   In such a multi-cavity configuration, a multi-electromechanical mechanism 8 and a plurality of electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7 and manufactured in a multi-cavity configuration. A large number of electronic components 10 can be hermetically sealed at the same time, and the productivity can be improved. In addition, electronic components 10 manufactured in a multi-cavity form in which a large number of microelectromechanical mechanisms 8 and a plurality of electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7 are collectively sealed. If stopped, the semiconductor substrate 7 (and the electronic component sealing substrate 6) is subjected to a cutting process such as a dicing process and divided into individual electronic components 10 (electronic devices). Generation | occurrence | production of the malfunction that the cutting powder etc. to adhere to the microelectromechanical mechanism 8 and obstruct | operate the action | operation can be prevented effectively.

次に、電子部品封止用基板６を用いた電子装置の製造方法について、図３（ａ）〜（ｅ）に基づいて説明する。図３は本発明の電子装置の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図であり、図３において図１および図２と同じ部位には同じ符号を付してある。   Next, a method for manufacturing an electronic device using the electronic component sealing substrate 6 will be described with reference to FIGS. FIG. 3 is a sectional view showing an example of an embodiment of an electronic device manufacturing method according to the present invention in the order of steps. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals.

まず、図３（ａ）に示すように、半導体基板７の主面に、微小電子機械機構８およびこれに電気的に接続された電極９が形成されて成る電子部品領域10ａを多数個縦横に配列形成した多数個取りの電子部品10ｂを準備する。   First, as shown in FIG. 3A, a large number of electronic component regions 10a each having a microelectromechanical mechanism 8 and electrodes 9 electrically connected to the main surface of a semiconductor substrate 7 are formed vertically and horizontally. A multi-piece electronic component 10b having an array formed is prepared.

また、半導体基板７は例えば単結晶や多結晶等のシリコン基板から成る。このシリコン基板の表面に酸化シリコン層を形成するとともに、フォトリソグラフィ等の微細配線加工技術を応用して、微小な振動体等の微小電子機械機構８および円形状パターン等の導体から成る電極９が形成された電子部品領域10ａを多数個配列形成することにより、多数個取りの電子部品10ｂが形成される。なお、この例においては、微小電子機械機構８と電極９とは、それぞれ半導体基板７の主面に形成された微細配線（図示せず）を介して電気的に接続されている。   The semiconductor substrate 7 is made of, for example, a silicon substrate such as a single crystal or polycrystal. A silicon oxide layer is formed on the surface of the silicon substrate, and by applying a fine wiring processing technique such as photolithography, a micro electromechanical mechanism 8 such as a minute vibrating body and an electrode 9 made of a conductor such as a circular pattern are provided. By arranging a large number of formed electronic component regions 10a, a multi-piece electronic component 10b is formed. In this example, the microelectromechanical mechanism 8 and the electrode 9 are electrically connected via fine wiring (not shown) formed on the main surface of the semiconductor substrate 7, respectively.

次に、図３（ｂ）に示すように、一方主面から他方主面または側面に導出された配線導体２が形成された絶縁基板１と、この絶縁基板１の一方主面に形成された、配線導体２と電気的に接続された接続パッド３と、絶縁基板１の一方主面に接続パッド３を取り囲むようにして接合された枠部材４と、接続パッド３上に形成された、枠部材４と同じ高さの接続端子５とから成る電子部品封止領域６ａを多数個電子部品の電子部品領域10ａに対応させて配列形成した多数個取りの電子部品封止用基板６ｂを準備する。   Next, as shown in FIG. 3B, the insulating substrate 1 on which the wiring conductor 2 led out from one main surface to the other main surface or the side surface is formed, and the one main surface of the insulating substrate 1 is formed. A connection pad 3 electrically connected to the wiring conductor 2, a frame member 4 joined so as to surround the connection pad 3 on one main surface of the insulating substrate 1, and a frame formed on the connection pad 3. A multi-piece electronic component sealing substrate 6b is prepared in which electronic component sealing regions 6a composed of connection terminals 5 having the same height as the member 4 are arranged corresponding to the electronic component regions 10a of the electronic components. .

一方主面から他方主面または側面に導出された配線導体２および接地用貫通導体12が形成された絶縁基板１は、例えば、絶縁基板１が酸化アルミニウム質焼結体から成り、配線導体２および接地用貫通導体12がタングステンのメタライズ層から成る場合、酸化アルミニウム，酸化珪素，酸化カルシウム等の原料粉末を有機樹脂，バインダとともに混練してスラリーを得て、このスラリーをドクターブレード法やリップコータ法等によりシート状に成形して複数のグリーンシートを形成し、このグリーンシートの表面および必要に応じてグリーンシートに予め形成しておいた貫通孔内に、タングステンのメタライズペーストを印刷塗布、充填し、その後、これらのグリーンシートを積層して焼成することにより形成することができる。   For example, the insulating substrate 1 on which the wiring conductor 2 and the grounding through conductor 12 led out from one main surface to the other main surface or side surface are formed, is formed of an aluminum oxide sintered body. When the grounding through conductor 12 is made of a tungsten metallized layer, a raw material powder of aluminum oxide, silicon oxide, calcium oxide or the like is kneaded with an organic resin and a binder to obtain a slurry, and this slurry is doctor blade method, lip coater method, etc. Forming a plurality of green sheets by forming into a sheet form by printing, filling and filling tungsten metallized paste into the surface of the green sheet and through holes previously formed in the green sheet as necessary, Then, it can form by laminating | stacking and baking these green sheets.

なお、これらのグリーンシートのうち、一部のものに打ち抜き加工を施して四角形状等の開口部を形成しておき、これを一方主面側の最表層に配置し、または最表層から内部に向かって数層積層することにより、焼成後の絶縁基板１の一方主面に、電子部品領域10ａの配列に対応する凹部１ａが配列形成されるようにしておいてもよい。このように凹部１ａを形成しておくと、凹部１ａの内側に微小電子機械機構８を収めることができるので、微小電子機械機構８を取り囲むための枠部材4の高さを低く抑えることができ、電子装置の低背化に有利なものとなる。   In addition, a part of these green sheets is punched to form a rectangular opening or the like, and this is disposed on the outermost layer on one main surface side, or from the outermost layer to the inside. By laminating several layers toward the front, the recesses 1a corresponding to the arrangement of the electronic component regions 10a may be arranged on one main surface of the fired insulating substrate 1. If the concave portion 1a is formed in this way, the micro electro mechanical mechanism 8 can be accommodated inside the concave portion 1a, so that the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low. This is advantageous for reducing the height of the electronic device.

また、接続パッド３は、配線導体２および接地用貫通導体12と同様の材料からなり、例えば、タングステンのペーストを絶縁基板１となるグリーンシートのうち最表面に、配線導体２となる印刷されたペーストと接続されるようにして、かつ多数個が縦横に配列形成されるようにして、スクリーン印刷法等により印刷しておくことにより形成される。   The connection pad 3 is made of the same material as that of the wiring conductor 2 and the grounding through conductor 12. For example, tungsten paste is printed on the outermost surface of the green sheet to be the insulating substrate 1 to be the wiring conductor 2. It is formed by printing by a screen printing method or the like so that it is connected to the paste and a large number are arranged in rows and columns.

また、枠部材４は、例えば鉄−ニッケル−コバルト合金から成る場合であれば、鉄−ニッケル−コバルト合金の金属板に圧延加工や金型による打ち抜き加工またはエッチング加工を行ない、枠状に成形することにより製作される。   Further, if the frame member 4 is made of, for example, an iron-nickel-cobalt alloy, the metal plate of the iron-nickel-cobalt alloy is subjected to a rolling process, a punching process using a mold, or an etching process to form a frame shape. It is manufactured by.

枠部材４と絶縁基板１との接合は、錫−銀系等の半田，金−錫ろう等の低融点ろう材や銀−ゲルマニウム系等の高融点ろう材，導電性有機樹脂等の接合材を介して接合する方法、あるいはシーム溶接，電子ビーム溶接等の溶接法により行なうことができる。   The frame member 4 and the insulating substrate 1 are joined by a solder such as a tin-silver solder, a low-melting solder such as gold-tin solder, a high-melting solder such as a silver-germanium, or a conductive organic resin. It can be carried out by a method of joining via a welding method or a welding method such as seam welding or electron beam welding.

この枠部材４と同じ高さとなるようにして、接続端子５が接続パッド３上に形成される。接続端子５は、例えば錫−銀系等の半田から成る場合であれば、この半田のボールを接続パッド３上に位置決めして加熱、溶融、接合させることにより形成される。   Connection terminals 5 are formed on the connection pads 3 so as to have the same height as the frame member 4. If the connection terminal 5 is made of, for example, tin-silver solder, the connection ball 5 is formed by positioning the solder ball on the connection pad 3 and heating, melting, and bonding.

接続端子５の高さを枠部材４の高さと同じとする方法としては、例えば接続端子５となる錫−銀半田を溶融させて接続パッド３上に取着形成する際に、その上面を枠部材４と同じ高さとなるようにしてセラミックス製の治具等で押さえておく等の方法を用いることができる。   As a method of making the height of the connection terminal 5 the same as the height of the frame member 4, for example, when the tin-silver solder used as the connection terminal 5 is melted and formed on the connection pad 3, its upper surface is framed. It is possible to use a method such as holding it with a ceramic jig or the like so as to be the same height as the member 4.

次に、図３（ｃ）に示すように、電子部品10ｂを電子部品封止用基板６ｂに対し各電子部品領域10ａと各電子部品封止領域６ａとを対応させて重ね合わせ、電極９を接続端子５に接合するとともに、微小電子機械機構８の周囲の半導体基板７の主面を枠部材４の主面に接合して、微小電子機械機構８を枠部材４の内側に気密封止する。   Next, as shown in FIG. 3C, the electronic component 10b is superimposed on the electronic component sealing substrate 6b so that each electronic component region 10a and each electronic component sealing region 6a correspond to each other. In addition to bonding to the connection terminal 5, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 is bonded to the main surface of the frame member 4, and the micro electro mechanical mechanism 8 is hermetically sealed inside the frame member 4. .

ここで、電極９と接続端子５との接合は、例えば接続端子５が錫−銀系半田から成る場合であれば、電極９上に接続端子５を位置合わせして載せ、これらを約250〜300℃程度の温度のリフロー炉中で熱処理すること等により行なわれる。   Here, when the electrode 9 and the connection terminal 5 are joined, for example, when the connection terminal 5 is made of tin-silver solder, the connection terminal 5 is aligned and placed on the electrode 9, and these are placed on the order of about 250- The heat treatment is performed in a reflow furnace at a temperature of about 300 ° C.

また、微小電子機械機構８の周囲の半導体基板７の主面と枠部材４の主面との接合は、例えばこの接合面に接続端子５と同様の錫−銀系の半田を挟んでおき、上述の電極９と接続端子５との接合と同時にリフロー炉中で熱処理することにより行なうことができる。この場合、接続端子５の高さを枠部材４の高さと同じとしていることから、電極９と接続端子５との接合と、枠部材４の主面と半導体基板７の主面との接合を容易かつ確実に、同時に行なうことができる。   The main surface of the semiconductor substrate 7 around the microelectromechanical mechanism 8 and the main surface of the frame member 4 are joined, for example, by sandwiching a tin-silver solder similar to the connection terminal 5 between the joint surfaces, Simultaneously with the joining of the electrode 9 and the connection terminal 5 described above, heat treatment can be performed in a reflow furnace. In this case, since the height of the connection terminal 5 is the same as the height of the frame member 4, the bonding between the electrode 9 and the connection terminal 5 and the bonding between the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 are performed. It can be done easily and reliably at the same time.

このように、本実施の形態の電子装置の製造方法によれば、電子部品領域10ａの電極９の外部導出のための接合と、微小電子機械機構８の気密封止のための接合とを同時に行なうことができるため、数時間程度を要する半田（ろう）付け等の接合の工程を、従来の製造方法に比べて、確実に少なくとも１工程減らすことができるので、電子装置の生産性を非常に高めることができる。 As described above, according to the method of manufacturing the electronic device of the present embodiment, the bonding for leading out the electrode 9 in the electronic component region 10a and the bonding for hermetic sealing of the microelectromechanical mechanism 8 are performed simultaneously. Since it can be performed, it is possible to reliably reduce at least one step of joining such as soldering (brazing), which takes about several hours, as compared with the conventional manufacturing method. Can be increased.

そして、図３（ｄ）に示すように、互いに接合された多数個取りの形態の電子部品10ｂおよび電子部品封止用基板６ｂを電子部品封止領域６ａ毎に分割して、電子部品封止領域６ａが分割された電子部品封止用基板６に電子部品領域10ａが分割された電子部品10が接合されて成る個々の電子装置を得る。   Then, as shown in FIG. 3D, the electronic component 10b and the electronic component sealing substrate 6b joined together are divided into the electronic component sealing regions 6a, and the electronic component sealing is performed. Individual electronic devices are obtained in which the electronic component 10 divided in the electronic component region 10a is bonded to the electronic component sealing substrate 6 divided in the region 6a.

互いに接合されるとともにそれぞれ多数個取りの形態とされた、電子部品10ｂおよび電子部品封止用基板６ｂの接合体の切断は、この接合体に対してダイシング加工等の切断加工を施すことにより行なうことができる。   Cutting the joined body of the electronic component 10b and the electronic component sealing substrate 6b, which are joined together and in a multi-cavity form, is performed by subjecting the joined body to a cutting process such as dicing. be able to.

本実施の形態の電子装置の製造方法においては、このダイシング加工等の切断加工の際に、各微小電子機械機構８は枠部材４の内側でこの枠部材４と半導体基板７と絶縁基板１とにより気密封止されているので、半導体基板７や絶縁基板１等の切断に伴って発生するシリコンやセラミックス等の切削粉等が微小電子機械機構８に付着することはなく、完成した電子装置において微小電子機械機構８を確実に正常に作動させることができる。 In the manufacturing method of the electronic device according to the present embodiment , each microelectromechanical mechanism 8 is disposed inside the frame member 4 at the time of cutting such as dicing. In the completed electronic device, cutting powder such as silicon or ceramics generated by cutting the semiconductor substrate 7 or the insulating substrate 1 does not adhere to the microelectromechanical mechanism 8. The microelectromechanical mechanism 8 can be reliably operated normally.

このように、本実施の形態の電子装置の製造方法によれば、従来のように、半導体基板７の主面に多数個を縦横に配列形成した電子部品領域10ａを切断する際に、その微小電子機械機構８をガラス板等で覆って保護するような工程を別途追加する必要はなく、従来の保護のためだけの工程を確実に削除することができるので、電子装置の生産性を非常に高いものとすることができる。 As described above, according to the manufacturing method of the electronic device of the present embodiment, when the electronic component region 10a in which a large number are vertically and horizontally arranged on the main surface of the semiconductor substrate 7 is cut, It is not necessary to separately add a process for protecting the electronic mechanical mechanism 8 with a glass plate or the like, and it is possible to reliably delete the conventional process only for protection, so that the productivity of the electronic device is greatly increased. Can be expensive.

また、上記のようにして製造された電子装置は、すでに気密封止されているとともに、その電極が配線導体２を介して外部に導出された状態であるので、これを別途パッケージ内に実装するような工程を追加する必要はなく、配線導体２および接地用貫通導体12の導出された部分を外部電気回路に半田ボール等の外部端子11を介して接続するだけで、外部電気回路基板に実装して使用することができる。   In addition, the electronic device manufactured as described above is already hermetically sealed, and the electrode is led out to the outside via the wiring conductor 2, so that this is separately mounted in a package. There is no need to add such a process, and the wiring conductor 2 and the lead-out portion 12 of the grounding through conductor 12 are mounted on the external electric circuit board simply by connecting the external electric circuit to the external electric circuit via the external terminals 11 such as solder balls. Can be used.

また、この場合、配線導体２は、絶縁基体１の他方主面または側面に導出されているので、外部電気回路に表面実装の形態で接続することができ、高密度に実装したり外部電気回路基板を効果的に小型化することができる。   Further, in this case, since the wiring conductor 2 is led out to the other main surface or side surface of the insulating base 1, it can be connected to the external electric circuit in the form of surface mounting, and can be mounted with high density or external electric circuit. The substrate can be effectively downsized.

なお、本発明は上述の実施の形態の例に限定されるものではなく、本発明の要旨の範囲内で種々の変形は可能である。例えば、上述の実施の形態の例では一つの電子装置内に一つの微小電子機械機構を気密封止したが、一つの電子装置内に複数の微小電子機械機構を気密封止してもよい。また、図１に示した例では、配線導体２および接地用貫通導体12は絶縁基板１の他方主面側に導出されているが、これを側面に導出したり側面および他方主面の両方に導出したりしてもよい。また、この導出された部分の外部電気回路への電気的な接続は、外部端子として半田ボールを介して行なうものに限らず、リード端子や導電性接着剤等を介して行なってもよい。   Note that the present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present invention. For example, in the example of the above-described embodiment, one microelectromechanical mechanism is hermetically sealed in one electronic device, but a plurality of microelectromechanical mechanisms may be hermetically sealed in one electronic device. Further, in the example shown in FIG. 1, the wiring conductor 2 and the grounding through conductor 12 are led out to the other main surface side of the insulating substrate 1, but this is led out to the side surface or both the side surface and the other main surface. Or may be derived. Further, the electrical connection of the derived portion to an external electric circuit is not limited to being performed via a solder ball as an external terminal, and may be performed via a lead terminal, a conductive adhesive, or the like.

本発明の電子部品封止用基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the board | substrate for electronic component sealing of this invention. 本発明の電子部品封止用基板の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the board | substrate for electronic component sealing of this invention. （ａ）〜（ｄ）は、本発明の電子装置の製造方法の実施の形態の一例をそれぞれ工程順に示した断面図である。(A)-(d) is sectional drawing which showed an example of embodiment of the manufacturing method of the electronic device of this invention in order of the process, respectively. 従来の電子部品封止用基板およびそれを用いて成る電子装置の一例を示す断面図である。It is sectional drawing which shows an example of the conventional board | substrate for electronic component sealing, and an electronic apparatus using the same.

符号の説明Explanation of symbols

１：絶縁基板
２：配線導体
３：接続パッド
４：枠部材
５：接続端子
６：電子部品封止用基板
６ａ：電子部品封止領域
６ｂ：電子部品封止用基板
７：半導体基板
８：微小電子機械機構
９：電極
10：電子部品
10ａ：電子部品領域
10ｂ：電子部品
12：接地用貫通導体 1: insulating substrate 2: wiring conductor 3: connection pad 4: frame member 5: connection terminal 6: electronic component sealing substrate 6a: electronic component sealing region 6b: electronic component sealing substrate 7: semiconductor substrate 8: minute Electromechanical mechanism 9: Electrode
10: Electronic components
10a: Electronic component area
10b: Electronic component
12: Through conductor for grounding

Claims (14)

半導体基板と該半導体基板の表面に設けられた微小電子機械機構と前記表面に設けられるとともに前記微小電子機械機構に電気的に接続される電極とを有する電子部品の前記微小電子機械機構を封止するための電子部品封止用基板であって、一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続される接続端子と、前記絶縁基板の前記一方主面に形成された、前記微小電子機械機構を取り囲んで気密封止するための導電性枠状封止部と、該導電性枠状封止部に電気的に接続されて前記絶縁基板に形成された接地用貫通導体とを有し、前記接地用貫通導体は、複数形成されているとともに、それらの隣接間隔が前記電子部品で使用される高周波信号の波長の１／２以下である電子部品封止用基板。 Sealing the microelectromechanical mechanism of an electronic component having a semiconductor substrate, a microelectromechanical mechanism provided on the surface of the semiconductor substrate, and an electrode provided on the surface and electrically connected to the microelectromechanical mechanism An electronic component sealing substrate for forming an insulating substrate on which a wiring conductor led out from one main surface to the other main surface or side surface is formed, and formed on the one main surface of the insulating substrate, a wiring conductor electrically connected to Ru connection terminal, said formed on said one main surface of the insulating substrate, the micro electronic mechanical system to the surrounding air conductive frame-like sealing portion for sealing, the A grounding through conductor electrically connected to the conductive frame-shaped sealing portion and formed on the insulating substrate, and a plurality of the grounding through conductors are formed, and their adjacent intervals are High frequency used in electronic components Electronic component sealing substrate is less than 1/2 of the wavelength of the items. 前記接地用貫通導体は、平面視して、前記微小電子機械機構を取り囲むように形成されている請求項１に記載の電子部品封止用基板。The electronic component sealing substrate according to claim 1, wherein the grounding through conductor is formed so as to surround the micro-electromechanical mechanism in a plan view. 前記接地用貫通導体は、平面視して、前記電極の周辺を囲むように形成されている請求項１または請求項２に記載の電子部品封止用基板。The electronic component sealing substrate according to claim 1, wherein the grounding through conductor is formed so as to surround a periphery of the electrode in a plan view. 前記接続端子は、前記導電性枠状封止部の内側に形成されている請求項１から請求項３のいずれかに記載の電子部品封止用基板。4. The electronic component sealing substrate according to claim 1, wherein the connection terminal is formed inside the conductive frame-shaped sealing portion. 5. 前記接地用貫通導体は、前記絶縁基板の主面に垂直な直線部分を有する請求項１から請求項４のいずれかに記載の電子部品封止用基板。5. The electronic component sealing substrate according to claim 1, wherein the grounding through conductor has a linear portion perpendicular to a main surface of the insulating substrate. 前記接続端子と前記配線導体との間に接続パッドが設けられ、前記導電性枠状封止部と前記接地用貫通導体との間に導体層が設けられている請求項１から請求項５のいずれかに記載の電子部品封止用基板。6. A connection pad is provided between the connection terminal and the wiring conductor, and a conductor layer is provided between the conductive frame-shaped sealing portion and the grounding through conductor. The electronic component sealing substrate according to any one of the above. 前記接続パッドと前記導体層は同一の材料からなる請求項６に記載の電子部品封止用基板。The electronic component sealing substrate according to claim 6, wherein the connection pad and the conductor layer are made of the same material. 前記接続端子と前記導電性枠状封止部とが多数個縦横に配列形成されていることを特徴とする請求項１から請求項７のいずれかに記載の電子部品封止用基板。 8. The electronic component sealing substrate according to claim 1 , wherein a plurality of the connection terminals and the conductive frame-shaped sealing portions are arranged vertically and horizontally. 半導体基板と該半導体基板の表面に設けられた微小電子機械機構と前記表面に設けられるとともに前記微小電子機械機構に電気的に接続される電極とを有する電子部品と、
一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、
前記電極と前記配線導体とを電気的に接続する接続端子と、
前記半導体基板と前記絶縁基板との間で前記微小電子機械機構を取り囲んで気密封止する導電性枠状封止部と、
前記絶縁基板に形成された、前記導電性枠状封止部に電気的に接続される接地用貫通導体と
を有し、
前記接地用貫通導体は、複数形成されているとともに、それらの隣接間隔が前記電子部品で使用される高周波信号の波長の１／２以下である電子装置。 An electronic component having an electrode electrically connected to the micro electronic mechanical system with semiconductors substrate and the semiconductor substrate microelectromechanical mechanism provided on the surface of the provided on the surface,
An insulating substrate on which a wiring conductor led out from one main surface to the other main surface or side surface is formed;
A connection terminal for electrically connecting the electrode and the wiring conductor;
A conductive frame-shaped sealing portion that hermetically seals the micro-electromechanical mechanism between the semiconductor substrate and the insulating substrate;
A grounding through conductor formed on the insulating substrate and electrically connected to the conductive frame-shaped sealing portion;
Have
An electronic device in which a plurality of the grounding through conductors are formed and an interval between them is equal to or less than ½ of a wavelength of a high-frequency signal used in the electronic component. 前記接地用貫通導体は、平面視して、前記微小電子機械機構を取り囲むように形成されている請求項９に記載の電子装置。The electronic device according to claim 9, wherein the grounding through conductor is formed so as to surround the microelectromechanical mechanism in a plan view. 前記接地用貫通導体は、平面視して、前記電極の周辺を囲むように形成されている請求項９または請求項１０に記載の電子装置。The electronic device according to claim 9, wherein the grounding through conductor is formed so as to surround a periphery of the electrode in a plan view. 前記接続端子は、前記導電性枠状封止部の内側に形成されている請求項９から請求項１１のいずれかに記載の電子装置。The electronic device according to claim 9, wherein the connection terminal is formed inside the conductive frame-shaped sealing portion. 前記接地用貫通導体は、前記絶縁基板の主面に垂直な直線部分を有する請求項９から請求項１２のいずれかに記載の電子装置。The electronic device according to claim 9, wherein the grounding through conductor has a linear portion perpendicular to a main surface of the insulating substrate. 半導体基板の表面に、微小電子機械機構およびこれに電気的に接続された電極を有する電子部品領域を多数個縦横に配列形成した電子部品を準備する工程と、一方主面から他方主面または側面に導出された配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続される接続端子と、前記絶縁基板の前記一方主面に形成された、前記微小電子機械機構を取り囲んで気密封止するための導電性枠状封止部と、該導電性枠状封止部に電気的に接続されて前記絶縁基板に形成された接地用貫通導体とを有し、前記接地用貫通導体は、複数形成されているとともに、それらの隣接間隔が前記電子部品で使用される高周波信号の波長の１／２以下である電子部品封止領域を多数個前記電子部品の前記電子部品領域に対応させて配列形成した電子部品封止用基板を準備する工程と、前記電子部品を、前記電極を前記接続端子に接合するとともに、前記微小電子機械機構の周囲の前記半導体基板の前記表面を前記導電性枠状封止部に接合して、前記微小電子機械機構を前記導電性枠状封止部の内側に気密封止する工程と、互いに接合された前記電子部品および前記電子部品封止用基板を前記電子部品封止領域毎に分割して、前記電子部品封止領域に前記電子部品領域が接合された個々の電子装置を得る工程とを具備する電子装置の製造方法。 A step of preparing an electronic component in which a plurality of electronic component regions having micro-electromechanical mechanisms and electrodes electrically connected to the micro-electromechanical mechanism are arranged vertically and horizontally on the surface of the semiconductor substrate, and from one main surface to the other main surface or side surface an insulating substrate derived wiring conductor is formed in, formed on the one main surface of the insulating substrate, wherein the wiring conductor electrically connected to Ru connection terminal, to the one main surface of the insulating substrate A formed conductive frame-shaped sealing portion that surrounds the micro-electromechanical mechanism and hermetically seals, and a ground that is electrically connected to the conductive frame-shaped sealing portion and formed on the insulating substrate An electronic component sealing region in which a plurality of the grounding through conductors are formed and their adjacent interval is 1/2 or less of the wavelength of a high-frequency signal used in the electronic component A large number of the electronic parts of the electronic A step of preparing an electronic component sealing substrate which is arranged and formed in correspondence to the goods area, the electronic component, as well as joining the electrode to the connection terminals, wherein the semiconductor substrate around the micro electronic mechanical system Bonding the surface to the conductive frame-shaped sealing portion and hermetically sealing the microelectromechanical mechanism inside the conductive frame-shaped sealing portion ; and the electronic component and the electronic component bonded to each other A method of manufacturing an electronic device, comprising: dividing a sealing substrate into each electronic component sealing region to obtain individual electronic devices in which the electronic component region is bonded to the electronic component sealing region.
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