JP2002289718A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JP2002289718A JP2002289718A JP2001089745A JP2001089745A JP2002289718A JP 2002289718 A JP2002289718 A JP 2002289718A JP 2001089745 A JP2001089745 A JP 2001089745A JP 2001089745 A JP2001089745 A JP 2001089745A JP 2002289718 A JP2002289718 A JP 2002289718A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- resin
- frame
- imaging device
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、フォトダイオード
（ＰＤ），ラインセンサ，イメージセンサ等の固体撮像
素子またはこれらの画像撮像部を有する半導体素子を具
備した固体撮像装置に関する。The present invention relates to a solid-state image pickup device such as a photodiode (PD), a line sensor, an image sensor, or a solid-state image pickup device including a semiconductor element having these image pickup portions.
【０００２】[0002]
【従来の技術】従来の、フォトダイオード，ラインセン
サ，イメージセンサ等の固体撮像素子またはこれらの画
像撮像部を有する半導体素子を具備した固体撮像装置
は、以下のように構成されていた。セラミックス等から
成り、固体撮像素子を上面の中心部に載置する底板とし
ての基体と、セラミックス等から成り、基体上面の外周
部に固体撮像素子を囲繞するように接合された枠体とか
ら構成される容器本体の内部に固体撮像素子を載置して
接着固定する。そして、固体撮像素子の電極と基体上面
の外部接続用の電極パッドとを、ボンディングワイヤや
基体上面に設けられたメタライズ層等で電気的に接続
し、枠体上面の外形と略同形状のガラス等から成る透明
蓋体を枠体上面に載置し、樹脂により接着封止すること
によって作製される。基体としては、よりコストメリッ
トのある樹脂基板を用いる場合もある。2. Description of the Related Art A conventional solid-state imaging device including a solid-state imaging device such as a photodiode, a line sensor, and an image sensor, or a semiconductor device having these image-capturing units has been configured as follows. Consists of a base body made of ceramics and the like, on which the solid-state imaging device is placed at the center of the top surface, and a frame body made of ceramics and joined to the outer periphery of the top surface of the base body so as to surround the solid-state imaging device. The solid-state imaging device is placed inside the container body to be bonded and fixed. Then, the electrodes of the solid-state imaging device and the electrode pads for external connection on the upper surface of the substrate are electrically connected by bonding wires or metallized layers provided on the upper surface of the substrate. It is manufactured by placing a transparent lid made of the above on the upper surface of the frame and bonding and sealing it with a resin. In some cases, a resin substrate having a cost advantage is used as the base.
【０００３】近年、撮像可能な範囲をより広げるため
に、長尺または大型の受光部を有する固体撮像素子を具
備した固体撮像装置が求められている。In recent years, a solid-state imaging device having a solid-state imaging device having a long or large light-receiving portion has been demanded in order to further expand an image-capable range.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、長尺ま
たは大型の固体撮像素子を具備した固体撮像装置の場
合、基体にセラミック基板を用いると、セラミック基板
の焼成プロセスに起因する収縮ばらつきが大きくなり、
寸法精度が劣化するという問題があった。このために、
自動化されたラインで固体撮像素子を基体に載置する
際、基体の寸法ばらつきのために、正確な位置に搭載で
きず、製造歩留まりの低下を引き起こすという問題があ
った。さらに、セラミック基板よりなる基体の大きさが
大きくなると、固体撮像装置を実装する外部のプリント
回路樹脂基板との熱膨張係数の差によって、基体とプリ
ント回路樹脂基板とを接続した半田にクラックが発生し
やすくなり、長期使用すると半田による接続部が断線す
る等の信頼性の問題があった。However, in the case of a solid-state imaging device having a long or large solid-state imaging device, when a ceramic substrate is used as a base, the variation in shrinkage due to the firing process of the ceramic substrate increases.
There is a problem that dimensional accuracy is deteriorated. For this,
When the solid-state imaging device is mounted on the substrate by an automated line, there is a problem that the substrate cannot be mounted at an accurate position due to dimensional variations of the substrate, thereby lowering the production yield. Furthermore, when the size of the base made of a ceramic substrate is increased, cracks occur in the solder connecting the base and the printed circuit resin substrate due to a difference in thermal expansion coefficient between the substrate and the external printed circuit resin substrate on which the solid-state imaging device is mounted. When used for a long time, there is a problem of reliability such as disconnection of a connection portion by solder.
【０００５】このような問題を解決するために、基体と
して樹脂基板を用いることができる。樹脂基板は、セラ
ミック基板と比べて、寸法が大きくなることによる寸法
精度の劣化も小さいため、製造歩留まりの低下等の問題
はない。さらに、樹脂基板とプリント回路樹脂基板とは
同様の材料で作製できるため、熱膨張係数の違いはほと
んどなく、半田による接続部での長期信頼性の問題もな
い。In order to solve such a problem, a resin substrate can be used as a base. Since the resin substrate is less likely to deteriorate in dimensional accuracy due to an increase in size as compared with the ceramic substrate, there is no problem such as a decrease in manufacturing yield. Further, since the resin substrate and the printed circuit resin substrate can be made of the same material, there is almost no difference in the coefficient of thermal expansion, and there is no problem of long-term reliability in the connection part by solder.
【０００６】しかしながら、別の問題として、樹脂基板
に固体撮像素子をエポキシ樹脂等の熱硬化性樹脂を用い
て接合すると、オーブン等で加熱して接合する必要があ
る。このため、常温に戻すと、樹脂基板と固体撮像素子
との熱膨張係数の差によって樹脂基板と固体撮像素子が
反ってしまい、固体撮像素子の受光画像が歪んでしまう
という問題があった。However, as another problem, when a solid-state image sensor is joined to a resin substrate by using a thermosetting resin such as an epoxy resin, it is necessary to heat and join the solid-state image sensor in an oven or the like. For this reason, when the temperature is returned to room temperature, the resin substrate and the solid-state image sensor warp due to the difference in thermal expansion coefficient between the resin substrate and the solid-state image sensor, causing a problem that a received image of the solid-state image sensor is distorted.
【０００７】従って、本発明は上記事情に鑑みて完成さ
れたものであり、その目的は、長尺または大型の受光部
を有する固体撮像素子を受光画像の歪みを抑えて搭載で
き、また寸法精度よく、歩留まりよく製造でき、長期信
頼性が高いものとすることにある。また、低コストで作
製できる固体撮像装置を提供することにある。Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to mount a solid-state imaging device having a long or large light receiving portion while suppressing distortion of a received image, and to achieve dimensional accuracy. An object of the present invention is to provide a semiconductor device that can be manufactured with good yield and has high long-term reliability. Another object is to provide a solid-state imaging device that can be manufactured at low cost.
【０００８】[0008]
【課題を解決するための手段】本発明の固体撮像装置
は、上面の中心部に固体撮像素子を紫外線硬化性樹脂を
介して載置接合した樹脂基板と、該樹脂基板の上面の外
周部に前記固体撮像素子を囲繞するようにして紫外線硬
化性樹脂により接合された側壁を成す枠体と、前記枠体
の上面に紫外線硬化性樹脂により接合された透明蓋体と
を具備した固体撮像装置であって、前記枠体の側壁の縦
断面形状が上辺よりも下辺が短い略四角形であることを
特徴とする。According to the present invention, there is provided a solid-state imaging device comprising: a resin substrate having a solid-state imaging device mounted and bonded to a central portion of an upper surface via an ultraviolet curable resin; A solid-state imaging device comprising: a frame forming a side wall joined by an ultraviolet-curable resin so as to surround the solid-state imaging device; and a transparent lid joined to the upper surface of the frame by an ultraviolet-curable resin. The vertical cross-sectional shape of the side wall of the frame is a substantially rectangular shape whose lower side is shorter than its upper side.
【０００９】本発明は、上記の構成により、樹脂基板と
枠体、枠体と透明蓋体、および樹脂基板と固体撮像素子
とが、常温下で紫外線硬化性樹脂によって接合されるた
め、樹脂基板と固体撮像素子との熱膨張係数の差に起因
する樹脂基板と固体撮像素子の反りが発生せず、その結
果受光画像に歪みが生じない固体撮像装置を提供するこ
とができる。According to the present invention, the resin substrate and the frame, the frame and the transparent lid, and the resin substrate and the solid-state imaging device are joined by the ultraviolet curable resin at room temperature. It is possible to provide a solid-state imaging device in which the resin substrate and the solid-state imaging device do not warp due to a difference in thermal expansion coefficient between the solid-state imaging device and the solid-state imaging device, and as a result, no distortion occurs in a received image.
【００１０】また、固体撮像素子および枠体は紫外線が
ほとんど透過しないが、それらの端面や側面で外側には
み出した紫外線硬化性樹脂に上方から紫外線を照射する
ことにより、紫外線硬化性樹脂を硬化させて接合し得
る。例えば枠体の場合、その側面の下端部で紫外線硬化
性樹脂がはみ出すように塗布し、そのはみ出した部分の
紫外線硬化性樹脂に上方から紫外線を照射すると、枠体
の側壁の縦断面形状が上辺よりも下辺が短い略四角形で
あることから、その下辺直下の紫外線硬化性樹脂に紫外
線が廻り込み易くなる。その結果、樹脂基板と枠体とを
高い接合強度で接合し得る。Although the solid-state imaging device and the frame hardly transmit ultraviolet light, the ultraviolet-curable resin protruding outside at the end faces and side surfaces is irradiated with ultraviolet light from above to cure the ultraviolet-curable resin. Can be joined. For example, in the case of a frame, the UV curable resin is applied so as to protrude at the lower end of the side surface, and the UV curable resin in the protruding portion is irradiated with ultraviolet light from above. Since the lower side has a substantially rectangular shape shorter than the lower side, the ultraviolet light easily flows into the ultraviolet curable resin immediately below the lower side. As a result, the resin substrate and the frame can be joined with high joining strength.
【００１１】また、枠体と透明蓋体との接合も紫外線硬
化性樹脂によって行うため、固体撮像素子を載置してか
ら透明蓋体を取り付け封止するまで、熱硬化性樹脂を用
いた場合の、オーブン等の内部に長時間放置する工程が
不要となる。従って、固体撮像装置の内部にダスト、異
物等の混入がなくなり、製造の歩留まりを飛躍的に向上
させることができる。さらに、透明蓋体の取り付け後、
オーブン等で加熱することにより、固体撮像素子および
枠体の下面直下の未硬化の紫外線硬化性樹脂を短時間で
硬化させることもできる。固体撮像素子の端面や枠体の
側面から外側にはみ出した紫外線硬化性樹脂が先に硬化
されているため、最後の１回の短時間の加熱により反り
等が発生することはほとんどない。Further, since the frame and the transparent lid are also joined by an ultraviolet-curable resin, a thermosetting resin is used from mounting the solid-state imaging device to mounting and sealing the transparent lid. This eliminates the need for a step of leaving the inside of an oven or the like for a long time. Therefore, dust and foreign matter are not mixed into the solid-state imaging device, and the production yield can be improved significantly. Furthermore, after attaching the transparent lid,
By heating in an oven or the like, the uncured ultraviolet-curable resin immediately below the lower surfaces of the solid-state imaging device and the frame can be cured in a short time. Since the ultraviolet-curing resin that has protruded outside from the end face of the solid-state imaging device or the side surface of the frame is hardened first, the last one-time heating for a short time hardly causes warpage or the like.
【００１２】また、樹脂基板は紫外線が透過するため、
固体撮像装置の裏面（下面）側から紫外線を照射するこ
とで、固体撮像素子および枠体の下面直下の未硬化の紫
外線硬化性樹脂を硬化させることもできる。Further, since the resin substrate transmits ultraviolet light,
By irradiating ultraviolet rays from the back (lower surface) side of the solid-state imaging device, the uncured ultraviolet-curable resin just below the lower surfaces of the solid-state imaging device and the frame can be cured.
【００１３】[0013]
【発明の実施の形態】本発明の固体撮像装置について以
下に説明する。図１の（Ａ）〜（Ｄ）は、本発明の固体
撮像装置の断面図、要部拡大断面図、枠体の側壁の拡大
断面図である。同図において、１は樹脂基板、２ａは樹
脂基板１と枠体３とを接合する紫外線硬化性樹脂、２ｂ
は枠体３と透明蓋体４とを接合する紫外線硬化性樹脂、
２ｃは樹脂基板１と固体撮像素子５とを接合する紫外線
硬化性樹脂、３は枠体、４は透明蓋体、５は固体撮像素
子、６はボンディングワイヤである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The solid-state imaging device according to the present invention will be described below. 1A to 1D are a sectional view of a solid-state imaging device according to the present invention, an enlarged sectional view of a main part, and an enlarged sectional view of a side wall of a frame. In the figure, reference numeral 1 denotes a resin substrate, 2a denotes an ultraviolet curable resin for joining the resin substrate 1 and the frame 3, 2b
Is an ultraviolet curable resin for joining the frame 3 and the transparent lid 4,
Reference numeral 2c denotes an ultraviolet curable resin for joining the resin substrate 1 and the solid-state imaging device 5, 3 denotes a frame, 4 denotes a transparent lid, 5 denotes a solid-state imaging device, and 6 denotes a bonding wire.
【００１４】本発明の樹脂基板１は、四ふっ化エチレン
樹脂（ポリテトラフルオロエチレン；ＰＴＦＥ）、四ふ
っ化エチレン・エチレン共重合樹脂（テトラフルオロエ
チレン−エチレン共重合樹脂；ＥＴＦＥ）、四ふっ化エ
チレン・パーフルオロアルコキシエチレン共重合樹脂
（テトラフルオロエチレン−パーフルテロアルキルビニ
ルエーテル共重合樹脂；ＰＦＡ）等のフッ素樹脂、ガラ
スエポキシ樹脂、ビスマレイドトリアジン樹脂、ポリイ
ミド樹脂等からなり、その両面には、固体撮像素子５と
電気的に接続される電極が形成される。樹脂基板１の厚
みは０．３〜３ｍｍ程度が良く、０．３ｍｍｍ未満で
は、樹脂基板１の強度が小さくなり、組み立て中に破損
し易くなる。３ｍｍを超えると、小型軽量化および薄型
化が成されず実用性が低下する。The resin substrate 1 of the present invention comprises an ethylene tetrafluoride resin (polytetrafluoroethylene; PTFE), an ethylene tetrafluoride / ethylene copolymer resin (tetrafluoroethylene-ethylene copolymer resin; ETFE), Fluororesin such as ethylene / perfluoroalkoxyethylene copolymer resin (tetrafluoroethylene-perfluteroalkylvinyl ether copolymer resin; PFA), glass epoxy resin, bismaleide triazine resin, polyimide resin, etc. Electrodes electrically connected to the solid-state imaging device 5 are formed. The thickness of the resin substrate 1 is preferably about 0.3 to 3 mm. If the thickness is less than 0.3 mm, the strength of the resin substrate 1 is reduced and the resin substrate 1 is easily broken during assembly. If it exceeds 3 mm, the size and weight and the thickness are not reduced, and the practicality is reduced.
【００１５】枠体３は、アルミナ（Ａｌ2Ｏ3）セラミッ
クス、ムライト（３Ａｌ2Ｏ3・２ＳｉＯ2）セラミック
ス等のセラミックス材料、ガラスセラミックス材料等の
無機材料、または四ふっ化エチレン樹脂（ポリテトラフ
ルオロエチレン；ＰＴＦＥ）、四ふっ化エチレン・エチ
レン共重合樹脂（テトラフルオロエチレン−エチレン共
重合樹脂；ＥＴＦＥ）、四ふっ化エチレン・パーフルオ
ロアルコキシエチレン共重合樹脂（テトラフルオロエチ
レン−パーフルテロアルキルビニルエーテル共重合樹
脂；ＰＦＡ）等のフッ素樹脂、ガラスエポキシ樹脂、ビ
スマレイドトリアジン樹脂、ポリイミド等の有機樹脂系
材料によって形成される。枠体３は、固体撮像素子５に
横方向から光が入って受光画像のノイズ等の原因となら
ないようにするために、黒色、黒灰色、茶色、褐色、黒
褐色、濃緑色、濃青色、青緑色、濃紫色、暗赤色等の暗
色系に着色されているのがよく、黒色などの極暗色系が
好ましい。The frame 3 is made of a ceramic material such as alumina (Al 2 O 3 ) ceramic, mullite (3Al 2 O 3 .2SiO 2 ) ceramic, an inorganic material such as a glass ceramic material, or an ethylene tetrafluoride resin (polytetrafluoroethylene). Fluoroethylene; PTFE), ethylene tetrafluoride / ethylene copolymer resin (tetrafluoroethylene-ethylene copolymer resin; ETFE), ethylene tetrafluoride / perfluoroalkoxyethylene copolymer resin (tetrafluoroethylene-perfluteroalkyl vinyl ether) It is formed of an organic resin material such as a fluororesin such as a copolymer resin (PFA), a glass epoxy resin, a bismaleide triazine resin, and a polyimide. The frame 3 is black, black-gray, brown, brown, black-brown, dark green, dark blue, and blue in order to prevent light from entering the solid-state imaging device 5 from the lateral direction and causing noise or the like in a received image. It is preferable to be colored in a dark system such as green, dark purple or dark red, and a very dark system such as black is preferable.
【００１６】また、樹脂基板１と枠体３との接合強度を
上げるために、枠体３の側壁の縦断面形状を上辺よりも
下辺が短い略四角形とする。この下辺の長さは０．１〜
５ｍｍが好ましく、０．１ｍｍ未満では、枠体３の側壁
の下面の面積が小さくなるため接合強度が小さくなり、
５ｍｍを超えると、枠体３の側壁の下面直下の紫外線硬
化性樹脂の硬化が不十分となり易い。Further, in order to increase the bonding strength between the resin substrate 1 and the frame 3, the vertical cross-sectional shape of the side wall of the frame 3 is made to be a substantially quadrangle whose lower side is shorter than the upper side. The length of this lower side is 0.1 ~
5 mm is preferable, and if it is less than 0.1 mm, the area of the lower surface of the side wall of the frame 3 becomes small, so that the bonding strength becomes small,
If it exceeds 5 mm, the curing of the ultraviolet curable resin immediately below the lower surface of the side wall of the frame 3 tends to be insufficient.
【００１７】このように、枠体３を、樹脂より強度の高
いセラミックス材料や樹脂基板１と同様の樹脂材料で作
製できるため、枠体３の側壁の下面を上面より小さくし
て樹脂基板１に接合することができる。つまり、枠体３
の側壁の下面の面積が小さくても、枠体３は強度が高い
か樹脂材料から成るため、樹脂基板１に対する接合性が
低下することがない。また、絶縁基板１の反りを抑える
ためには、枠体３が樹脂基板１と同様の樹脂材料から成
るのが好ましい。As described above, since the frame 3 can be made of a ceramic material having a higher strength than a resin or a resin material similar to the resin substrate 1, the lower surface of the side wall of the frame 3 is made smaller than the upper surface and the resin substrate 1 is formed. Can be joined. That is, the frame 3
Even if the area of the lower surface of the side wall is small, the frame 3 has high strength or is made of a resin material, so that the joining property to the resin substrate 1 does not decrease. In order to suppress the warpage of the insulating substrate 1, the frame 3 is preferably made of the same resin material as the resin substrate 1.
【００１８】また、図１（Ｃ），（Ｄ）に示すように、
枠体３の側壁の縦断面形状において、下辺と両側辺との
間の角部に円弧状の面取り部（Ｒ面）、直線状の面取り
部（Ｃ面）が形成されているのが好ましい。これらの形
状とすることで、枠体３の上方から照射される紫外線が
枠体３の側壁下面に回折して、紫外線硬化性樹脂２ａの
硬化する割合が大きくなり、樹脂基板１と枠体３との接
合強度をさらに上げることができる。なお、図１
（Ｃ），（Ｄ）において、（Ｂ）のようにさらに枠体３
の側壁が下面側に向かって先細り状となっいてもよい。Further, as shown in FIGS. 1C and 1D,
In the vertical cross-sectional shape of the side wall of the frame body 3, it is preferable that an arc-shaped chamfer (R surface) and a straight chamfer (C surface) are formed at a corner between the lower side and both sides. By adopting these shapes, the ultraviolet rays irradiated from above the frame 3 are diffracted to the lower surface of the side wall of the frame 3, and the curing ratio of the ultraviolet curable resin 2 a is increased. And the bonding strength with the metal can be further increased. FIG.
In (C) and (D), as shown in FIG.
May be tapered toward the lower surface side.
【００１９】透明蓋体４は、光透過率、製造のし易さ、
化学的安定性、強度等の点で、ソーダガラス等のガラ
ス、プラスチック、サファイア（アルミナの単結晶）、
石英等が好ましい。The transparent lid 4 has a light transmittance, easy manufacturing,
In terms of chemical stability, strength, etc., glass such as soda glass, plastic, sapphire (alumina single crystal),
Quartz is preferred.
【００２０】固体撮像素子５は、フォトダイオード（Ｐ
Ｄ），ラインセンサ，イメージセンサ，ＣＣＤ（Charge
Coupled Device），ＥＰＲＯＭ（Erasable Program
mable ＲＯＭ）等の固体撮像素子、またはこれらの撮
像部を有する半導体素子である。The solid-state imaging device 5 includes a photodiode (P
D), line sensor, image sensor, CCD (Charge
Coupled Device), EPROM (Erasable Program)
mable ROM) or a semiconductor device having these imaging units.
【００２１】ボンディングワイヤ６は、ボンディング装
置によって固体撮像素子５と樹脂基板１とを電気的に接
続する細線で、Ａｕ，Ａｌ等からなる。The bonding wires 6 are thin wires for electrically connecting the solid-state imaging device 5 and the resin substrate 1 by a bonding device, and are made of Au, Al or the like.
【００２２】また、本発明の固体撮像装置は、母基板に
樹脂基板１となる基板領域を多数個を作製しておき、各
基板領域に枠体３および固体撮像素子５を載置固定し、
ボンディングワイヤ６により電気的な接続を行い透明蓋
体４で封止した後、最後にダイシング法等により個々の
固体撮像装置に切断し分割してもよい。その際、透明蓋
体４として大型の母蓋体を用いて、母基板と同時に切断
し分割するようにしてもよい。Further, in the solid-state imaging device of the present invention, a large number of substrate regions serving as the resin substrate 1 are prepared on the mother substrate, and the frame 3 and the solid-state imaging device 5 are mounted and fixed on each substrate region.
After the electrical connection is made by the bonding wire 6 and the transparent lid 4 is sealed, the individual solid-state imaging devices may be finally cut and divided by dicing or the like. At that time, a large mother lid may be used as the transparent lid 4 and cut and divided at the same time as the mother substrate.
【００２３】かくして、本発明は、樹脂基板１と枠体
３、枠体３と透明蓋体４、および樹脂基板１と固体撮像
素子５とが、常温下で紫外線硬化性樹脂２ａ〜２ｃによ
って接合されるため、樹脂基板１と固体撮像素子５との
熱膨張係数の差に起因する反りが発生せず、受光画像に
歪みなどが発生しない。また、枠体３と透明蓋体４との
接合も紫外線硬化性樹脂２ｂによって行われるため、固
体撮像素子５を載置してから、透明蓋体４を取り付けて
封止するまで、オーブン等に長時間放置する必要がなく
なる。その結果、固体撮像装置の内部にダスト、異物等
の混入がなくなり、製造歩留まりを飛躍的に向上させ得
る。さらに、好ましくは、枠体３の側壁の縦断面形状に
おいて、下辺と両側辺との間の角部に円弧状の面取り
部、直線状の面取り部、または段差部が形成されている
と、枠体３の上方から照射される紫外線が枠体３の側壁
下面に回折して、紫外線硬化性樹脂２ａの硬化する割合
が大きくなり、樹脂基板１と枠体３との接合強度をさら
に上げることができる。この場合、枠体３が紫外線の透
過率が小さいセラミックス等から成る場合であっても、
上記の紫外線の回折による効果により、樹脂基板と枠体
とを強固に接合することができる。Thus, according to the present invention, the resin substrate 1 and the frame 3, the frame 3 and the transparent cover 4, and the resin substrate 1 and the solid-state imaging device 5 are joined at room temperature by the ultraviolet curable resins 2a to 2c. Therefore, no warpage occurs due to a difference in thermal expansion coefficient between the resin substrate 1 and the solid-state imaging device 5, and no distortion occurs in the received light image. In addition, since the joining of the frame 3 and the transparent lid 4 is also performed by the ultraviolet-curable resin 2b, after the solid-state imaging device 5 is mounted, the transparent lid 4 is attached and sealed, and then the oven is placed in an oven or the like. There is no need to leave it for a long time. As a result, no dust, foreign matter, or the like is mixed into the solid-state imaging device, and the manufacturing yield can be significantly improved. Further, preferably, in the vertical cross-sectional shape of the side wall of the frame 3, if an arc-shaped chamfer, a straight chamfer, or a step is formed at a corner between the lower side and both sides, Ultraviolet rays irradiated from above the body 3 are diffracted toward the lower surface of the side wall of the frame 3, and the curing rate of the ultraviolet-curable resin 2 a is increased. it can. In this case, even when the frame 3 is made of a ceramic or the like having a low ultraviolet transmittance,
The resin substrate and the frame can be firmly joined by the effect of the above-mentioned diffraction of ultraviolet rays.
【００２４】なお、本発明は上記実施の形態に限定され
るものではなく、本発明の要旨を逸脱しない範囲内にお
いて種々の変更を行なうことは何等差し支えない。It should be noted that the present invention is not limited to the above-described embodiment, and that various changes may be made without departing from the scope of the present invention.
【００２５】[0025]
【発明の効果】本発明は、上面の中心部に固体撮像素子
を紫外線硬化性樹脂を介して載置接合した樹脂基板と、
樹脂基板の上面の外周部に固体撮像素子を囲繞するよう
にして紫外線硬化性樹脂により接合された側壁を成す枠
体と、枠体の上面に紫外線硬化性樹脂により接合された
透明蓋体とを具備し、枠体の側壁の縦断面形状が上辺よ
りも下辺が短い略四角形であることにより、樹脂基板と
枠体、枠体と透明蓋体、および樹脂基板と固体撮像素子
とが、常温下で紫外線硬化性樹脂によって接合されるた
め、樹脂基板と固体撮像素子との熱膨張係数の差に起因
するそれらの反りが発生せず、受光画像に歪みなどが発
生しない固体撮像装置と成る。According to the present invention, there is provided a resin substrate in which a solid-state imaging device is mounted and joined to a central portion of an upper surface via an ultraviolet curable resin,
A frame body forming a side wall joined by an ultraviolet curable resin so as to surround the solid-state imaging device on the outer peripheral portion of the upper surface of the resin substrate, and a transparent lid joined by an ultraviolet curable resin to the upper surface of the frame body. Since the vertical cross-sectional shape of the side wall of the frame body is a substantially rectangular shape in which the lower side is shorter than the upper side, the resin substrate and the frame, the frame and the transparent lid, and the resin substrate and the solid-state imaging device are at room temperature. Therefore, the solid-state imaging device does not warp due to the difference in the coefficient of thermal expansion between the resin substrate and the solid-state imaging device, and does not generate distortion or the like in the received light image.
【００２６】また、固体撮像素子および枠体は紫外線が
ほとんど透過しないが、それらの端面や側面で外側には
み出した紫外線硬化性樹脂に上方から紫外線を照射する
ことにより、紫外線硬化性樹脂を硬化させて接合し得
る。例えば枠体の場合、その側面の下端部で紫外線硬化
性樹脂がはみ出すように塗布し、そのはみ出した部分の
紫外線硬化性樹脂に上方から紫外線を照射すると、枠体
の側壁の下面直下の紫外線硬化性樹脂に紫外線が廻り込
み易くなる。その結果、樹脂基板と枠体とを高い接合強
度で接合し得る。Although the solid-state image sensor and the frame hardly transmit ultraviolet light, the ultraviolet-curable resin protruding outside at the end faces and side surfaces is irradiated with ultraviolet light from above to cure the ultraviolet-curable resin. Can be joined. For example, in the case of a frame, the UV-curable resin is applied so as to protrude at the lower end of the side surface, and the UV-curable resin in the protruding portion is irradiated with ultraviolet light from above. UV light easily enters the conductive resin. As a result, the resin substrate and the frame can be joined with high joining strength.
【００２７】また、枠体と透明蓋体との接合も紫外線硬
化性樹脂によって行うため、固体撮像素子を載置してか
ら透明蓋体を取り付け封止するまで、熱硬化性樹脂を用
いた場合の、オーブン等の内部に長時間放置する工程が
不要となる。即ち、紫外線硬化性樹脂は塗布後直ちに硬
化させることができるため、固体撮像装置の内部にダス
トや異物が混入するのを防ぐことができ、固体撮像装置
の製造歩留まりを飛躍的に上げることができる。Further, since the joining between the frame and the transparent lid is also performed by using an ultraviolet-curing resin, the thermosetting resin is used after the solid-state imaging device is mounted and the transparent lid is attached and sealed. This eliminates the need for a step of leaving the inside of an oven or the like for a long time. That is, since the ultraviolet curable resin can be cured immediately after application, dust and foreign matter can be prevented from being mixed into the solid-state imaging device, and the production yield of the solid-state imaging device can be drastically increased. .
【００２８】また、樹脂基板は紫外線が透過するため、
固体撮像装置の裏面側から紫外線を照射することで、固
体撮像素子および枠体の下面直下の未硬化の紫外線硬化
性樹脂を硬化させることもできる。Since the resin substrate transmits ultraviolet light,
By irradiating ultraviolet rays from the back surface side of the solid-state imaging device, the uncured ultraviolet-curable resin just below the lower surfaces of the solid-state imaging device and the frame can be cured.
【図１】（Ａ）は本発明の固体撮像装置の断面図、
（Ｂ）は本発明の固体撮像装置の要部拡大断面図、
（Ｃ），（Ｄ）は本発明の固体撮像装置における枠体に
ついて実施の形態の各例を示す断面図である。FIG. 1A is a sectional view of a solid-state imaging device according to the present invention,
(B) is an enlarged sectional view of a main part of the solid-state imaging device of the present invention,
(C), (D) is a cross-sectional view showing each example of the embodiment of the frame in the solid-state imaging device of the present invention.
１：樹脂基板 ２ａ〜２ｃ：紫外線硬化性樹脂 ３：枠体 ４：透明蓋体 ５：固体撮像素子 ６：ボンディングワイヤ 1: resin substrate 2a to 2c: ultraviolet curable resin 3: frame 4: transparent lid 5: solid-state image sensor 6: bonding wire
Claims (1)
化性樹脂を介して載置接合した樹脂基板と、該樹脂基板
の上面の外周部に前記固体撮像素子を囲繞するようにし
て紫外線硬化性樹脂により接合された側壁を成す枠体
と、前記枠体の上面に紫外線硬化性樹脂により接合され
た透明蓋体とを具備した固体撮像装置であって、前記枠
体の側壁の縦断面形状が上辺よりも下辺が短い略四角形
であることを特徴とする固体撮像装置。1. A resin substrate in which a solid-state imaging device is mounted and joined to a central portion of an upper surface via an ultraviolet-curing resin, and an ultraviolet-curing device is provided on an outer peripheral portion of the upper surface of the resin substrate so as to surround the solid-state imaging device. A solid-state imaging device comprising: a frame forming a side wall joined by a conductive resin; and a transparent lid joined to an upper surface of the frame by an ultraviolet curable resin, wherein a vertical sectional shape of the side wall of the frame is provided. Is a substantially rectangular shape whose lower side is shorter than its upper side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001089745A JP2002289718A (en) | 2001-03-27 | 2001-03-27 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001089745A JP2002289718A (en) | 2001-03-27 | 2001-03-27 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002289718A true JP2002289718A (en) | 2002-10-04 |
Family
ID=18944628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001089745A Pending JP2002289718A (en) | 2001-03-27 | 2001-03-27 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002289718A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1526579A2 (en) * | 2003-10-23 | 2005-04-27 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
| JP2005212017A (en) * | 2004-01-28 | 2005-08-11 | Kyocera Corp | Electronic component sealing substrate, multiple molding electronic component sealing substrate, and electronic device manufacturing method |
| JP2006504279A (en) * | 2002-10-25 | 2006-02-02 | フリースケール セミコンダクター インコーポレイテッド | Image sensor device |
| EP1463120A3 (en) * | 2003-03-25 | 2006-03-22 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
| JP2007208045A (en) * | 2006-02-02 | 2007-08-16 | Sony Corp | Imaging device, camera module, and method for manufacturing electronic equipment and imaging device |
| US10103188B2 (en) | 2016-09-13 | 2018-10-16 | Renesas Electronics Corporation | Method of manufacturing semiconductor device and semiconductor device |
| WO2022014201A1 (en) * | 2020-07-16 | 2022-01-20 | 日本電気硝子株式会社 | Protective cap, electronic device, and protective cap production method |
-
2001
- 2001-03-27 JP JP2001089745A patent/JP2002289718A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006504279A (en) * | 2002-10-25 | 2006-02-02 | フリースケール セミコンダクター インコーポレイテッド | Image sensor device |
| JP4895506B2 (en) * | 2002-10-25 | 2012-03-14 | インテレクチュアル ベンチャーズ セカンド エルエルシー | Image sensor device |
| EP1463120A3 (en) * | 2003-03-25 | 2006-03-22 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
| US7651881B2 (en) | 2003-03-25 | 2010-01-26 | Fujifilm Corporation | Solid-state imaging device and method for manufacturing the same |
| EP1526579A2 (en) * | 2003-10-23 | 2005-04-27 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
| EP1526579A3 (en) * | 2003-10-23 | 2009-07-15 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| JP2005212017A (en) * | 2004-01-28 | 2005-08-11 | Kyocera Corp | Electronic component sealing substrate, multiple molding electronic component sealing substrate, and electronic device manufacturing method |
| JP2007208045A (en) * | 2006-02-02 | 2007-08-16 | Sony Corp | Imaging device, camera module, and method for manufacturing electronic equipment and imaging device |
| US10103188B2 (en) | 2016-09-13 | 2018-10-16 | Renesas Electronics Corporation | Method of manufacturing semiconductor device and semiconductor device |
| WO2022014201A1 (en) * | 2020-07-16 | 2022-01-20 | 日本電気硝子株式会社 | Protective cap, electronic device, and protective cap production method |
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