JP4751865B2 - 裏面照射型固体撮像素子及びその製造方法 - Google Patents

裏面照射型固体撮像素子及びその製造方法 Download PDF

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Publication number
JP4751865B2
JP4751865B2 JP2007233960A JP2007233960A JP4751865B2 JP 4751865 B2 JP4751865 B2 JP 4751865B2 JP 2007233960 A JP2007233960 A JP 2007233960A JP 2007233960 A JP2007233960 A JP 2007233960A JP 4751865 B2 JP4751865 B2 JP 4751865B2
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shielding member
light shielding
imaging device
state imaging
light
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JP2009065098A (ja
JP2009065098A5 (zh
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周 高橋
雄二 伊藤
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Fujifilm Corp
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Fujifilm Corp
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JP2007233960A 2007-09-10 2007-09-10 裏面照射型固体撮像素子及びその製造方法 Expired - Fee Related JP4751865B2 (ja)

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JP2009065098A JP2009065098A (ja) 2009-03-26
JP2009065098A5 JP2009065098A5 (zh) 2010-08-26
JP4751865B2 true JP4751865B2 (ja) 2011-08-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545325A (zh) * 2012-07-13 2014-01-29 株式会社东芝 固体拍摄装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2906079B1 (fr) * 2006-09-19 2009-02-20 E2V Semiconductors Soc Par Act Capteur d'image en couleur a colorimetrie amelioree
JP5478217B2 (ja) 2009-11-25 2014-04-23 パナソニック株式会社 固体撮像装置
JP5663925B2 (ja) * 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5763474B2 (ja) * 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
JP2012064703A (ja) 2010-09-15 2012-03-29 Sony Corp 撮像素子および撮像装置
WO2012165255A1 (ja) * 2011-06-02 2012-12-06 富士フイルム株式会社 固体撮像装置及びその製造方法
JP6168331B2 (ja) * 2012-05-23 2017-07-26 ソニー株式会社 撮像素子、および撮像装置
JP5519827B2 (ja) * 2013-05-13 2014-06-11 ソニー株式会社 固体撮像装置及び電子機器
JP6060851B2 (ja) 2013-08-09 2017-01-18 ソニー株式会社 固体撮像装置の製造方法
JP6339032B2 (ja) 2015-02-19 2018-06-06 東京エレクトロン株式会社 遮光体を含む光学装置の製造方法、および記憶媒体
JP6176313B2 (ja) * 2015-12-02 2017-08-09 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US9985072B1 (en) * 2016-11-29 2018-05-29 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor with dual damascene grid design having absorption enhancement structure
DE102017117948B4 (de) 2016-11-29 2022-07-21 Taiwan Semiconductor Manufacturing Co. Ltd. Cmos-bildsensor mit dual-damascene-gitterdesign mit einer absorptionsverstärkungsstruktur
JP6663887B2 (ja) * 2017-07-11 2020-03-13 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163462A (ja) * 1996-11-29 1998-06-19 Sony Corp マス型フィルタ構造による固体撮像素子及び製造方法
JP3759435B2 (ja) * 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
JP4123415B2 (ja) * 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
JP4483442B2 (ja) * 2004-07-13 2010-06-16 ソニー株式会社 固体撮像素子と固体撮像装置、固体撮像素子の製造方法
JP4725095B2 (ja) * 2004-12-15 2011-07-13 ソニー株式会社 裏面入射型固体撮像装置及びその製造方法
JP5124934B2 (ja) * 2005-02-04 2013-01-23 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
JP2006261638A (ja) * 2005-02-21 2006-09-28 Sony Corp 固体撮像装置および固体撮像装置の駆動方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545325A (zh) * 2012-07-13 2014-01-29 株式会社东芝 固体拍摄装置

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