JP4746342B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP4746342B2 JP4746342B2 JP2005117956A JP2005117956A JP4746342B2 JP 4746342 B2 JP4746342 B2 JP 4746342B2 JP 2005117956 A JP2005117956 A JP 2005117956A JP 2005117956 A JP2005117956 A JP 2005117956A JP 4746342 B2 JP4746342 B2 JP 4746342B2
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- semiconductor device
- conductor post
- sealing resin
- rewiring
- insulating film
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Description
図1は、本発明の第1実施形態に係る半導体装置100の一部の断面構造図である。半導体装置100は、W−CSPの樹脂封止半導体装置であり、半導体基板1と、保護膜2及び3と、電極パッド4と、導電膜5と、再配線6と、導体ポスト7と、絶縁膜8と、封止樹脂9と、外部電極10とを備えている。
本発明の第1実施形態によれば、導体ポスト7と封止樹脂9との間に生じた間隙部11を絶縁膜8、例えば、シリコーンで埋め込むことにより、半導体装置100の封止効果を向上させることができる。すなわち、間隙部11からの水分の進入を抑制して耐湿性を向上させることができ、導体ポスト7の外力による変位を抑制して機械的強度を向上させることができる。また、シリコーンなどの熱硬化性を有する液状材料を塗布して間隙部11を埋め込むため、工程が非常に簡便であり、製造コストを低減することができる。
図4は、本発明の第2実施形態に係る半導体装置200の一部の断面構造図である。半導体装置200は、第1実施形態に係る半導体装置100(図1)において、導体ポスト7と封止樹脂9との間に生じた間隙部11を覆う絶縁膜8の代わりに、絶縁膜8aが形成されている点が異なる。その他の構造は半導体装置100と同じであるため、図4では、半導体装置100と同一の構造については図1と同一符号を付してその説明を省略する。
本発明の第2実施形態によれば、導体ポスト7と封止樹脂9との間に生じた間隙部11を絶縁膜8a、例えば、シリコーンで埋め込むことにより、半導体装置200の封止効果を向上させることができる。すなわち、間隙部11からの水分の進入を抑制して耐湿性を向上させることができ、導体ポスト7の外力による変位を抑制して機械的強度を向上させることができる。また、シリコーンなどの熱硬化性を有する液状材料を塗布して間隙部11を埋め込むため、工程が非常に簡便であり、製造コストを低減することができる。さらに、封止樹脂9の表面に塗布されたシリコーンなどの液状材料を除去することにより、外部電極10の側面部が完全に露出されるため、半導体装置200と実装基板との接続信頼性を向上させることができる。
2、3・・・保護膜
4・・・電極パッド
5・・・導電膜
6・・・再配線
7・・・導体ポスト
8、8a・・・絶縁膜
9・・・封止樹脂
10・・・外部電極
11・・・間隙部
12・・・砥石
100、200・・・半導体装置
Claims (7)
- 主面に複数の電極パッドを有する半導体基板と、
前記半導体基板の上方に前記電極パッドに接続して形成された再配線と、
前記再配線の上面の一部に接続して形成されたCuからなる導体ポストと、
前記導体ポストの側面に形成された熱硬化性を有するシリコーンからなる絶縁膜と、
前記再配線を含む前記半導体基板上に前記絶縁膜が形成された前記導体ポストの側面を覆うように形成されたエポキシ樹脂からなる封止樹脂と、
前記導体ポストの上面に接続して形成された外部電極と、
を備えることを特徴とする半導体装置。 - 前記封止樹脂の表面に前記絶縁膜をさらに備えることを特徴とする、請求項1に記載の半導体装置。
- 主面に複数の電極パッドを備えた半導体基板を準備する工程と、
前記半導体基板の上方に前記電極パッドに接続する再配線を形成する工程と、
前記再配線の上面の一部に接続する導体ポストを形成する工程と、
前記再配線を含む前記半導体基板上に前記導体ポストを略同一の高さで覆う封止樹脂を形成する工程と、
前記導体ポストの上面に接続する外部電極を形成する工程と、
前記導体ポストの側面と前記封止樹脂との間に生じた間隙の内部に熱硬化性及び絶縁性を有する液状物質を塗布する工程と、
前記液状物質を熱処理により熱硬化させて絶縁膜を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記液状物質を塗布する工程は、前記封止樹脂の表面に前記液状物質を塗布し、脱泡処理により前記間隙の内部に前記液状物質を注入することを特徴とする、請求項3に記載の半導体装置の製造方法。
- 前記液状物質は、シリコーンであることを特徴とする、請求項4に記載の半導体装置の製造方法。
- 前記液状物質を塗布する工程は、前記封止樹脂の表面に前記液状物質を塗布し、脱泡処理により前記間隙の内部に前記液状物質を注入した後に、前記封止樹脂の表面の前記液状物質を除去することを特徴とする、請求項3に記載の半導体装置の製造方法。
- 前記液状物質は、シリコーンであることを特徴とする、請求項6に記載の半導体装置の製造方法。
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