JP4710700B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP4710700B2 JP4710700B2 JP2006114641A JP2006114641A JP4710700B2 JP 4710700 B2 JP4710700 B2 JP 4710700B2 JP 2006114641 A JP2006114641 A JP 2006114641A JP 2006114641 A JP2006114641 A JP 2006114641A JP 4710700 B2 JP4710700 B2 JP 4710700B2
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- semiconductor substrate
- bonding wire
- acceleration sensor
- substrate
- semiconductor
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Sensors (AREA)
- Wire Bonding (AREA)
Description
体装置を適切に製造可能な半導体装置の製造方法を提供することができる。
図1に示されるように、本実施形態の加速度センサS1は、大きくは、半導体基板10に素子部としての可動体20を設けてなる加速度センサ素子100に、外部との電気的な接続を行うための導電性の材料よりなる接続部材としてのボンディングワイヤ200を電気的に接続することにより構成されている。
V0=(CS1−CS2)・Vcc/Cf
このようにして、加速度の検出がなされる。
このような加速度センサ素子100は、たとえば、次のようにして製造することができる。図6は、図1に示される本実施形態の加速度センサS1の製造方法を示す工程図である。
ところで、本実施形態によれば、半導体基板10と、この半導体基板10に設けられた素子部20と、半導体基板10と電気的に接続され外部との電気的な接続を行うための導電性の材料よりなる接続部材200とを備える半導体装置S1において、接続部材200は半導体基板10の表面に直接接触しており、この接触部において接続部材200を構成する導電性の材料と半導体基板10を構成する半導体とが反応した反応生成物300を形成することにより、接続部材200と半導体基板10とが電気的に接続されていることを特徴とする半導体装置S1が提供される。
ここで、本実施形態の種々の変形例について述べておく。図8(a)は、第1の変形例としての加速度センサにおける加速度センサ素子100の概略平面図であり、図8(b)は図8(a)の概略断面図である。なお、以下の各変形例を示す図のうち断面図は、上記図2(b)と同様に、加速度センサ素子100における可動体20を含む断面と接続部材200の近傍の断面とを合成したモデル的な断面を示している。
なお、ボンディングワイヤ200と半導体基板200との接触部において、ボンディングワイヤ200を構成する導電性の材料が半導体基板10の内部へくさび状に入り込んだ形、いわゆるアロイスパイクが発生していてもよい。
200…接続部材としてのボンディングワイヤ、
300…反応生成物としてのAl−Si反応層。
Claims (8)
- Siよりなる半導体基板(10)と、
前記半導体基板(10)に設けられた素子部(20)と、
前記半導体基板(10)と電気的に接続され外部との電気的な接続を行うための導電性の材料よりなる線材であるボンディングワイヤ(200)とを備える半導体装置において、
前記ボンディングワイヤ(200)は前記半導体基板(10)を構成するSiの表面に直接接触しており、該接触部において前記ボンディングワイヤ(200)を構成する導電性の材料と前記半導体基板(10)を構成するSiとが反応した反応生成物(300)を形成することにより、前記ボンディングワイヤ(200)と前記半導体基板(10)とが電気的に接続されていることを特徴とする半導体装置。 - 前記ボンディングワイヤ(200)を構成する導電性の材料はAlであり、前記反応生成物(300)はAl−Siであることを特徴とする請求項1に記載の半導体装置。
- 前記素子部は、力学量の印加に伴い前記半導体基板(10)に対して変位可能な可動体(20)であることを特徴とする請求項1または2に記載の半導体装置。
- Siよりなる半導体基板(10)を用意し、前記半導体基板(10)に素子部(20)を設けるとともに、外部との電気的な接続を行うための導電性の材料よりなる線材であるボンディングワイヤ(200)を前記半導体基板(10)に電気的に接続してなる半導体装置の製造方法において、
前記ボンディングワイヤ(200)を前記半導体基板(10)を構成するSiの表面に直接接触させた状態で、この接触部に熱処理を施すことにより、前記接触部において前記ボンディングワイヤ(200)を構成する導電性の材料と前記半導体基板(10)を構成するSiとを反応させ反応生成物(300)を形成することを特徴とする半導体装置の製造方法。 - 前記熱処理は、前記接触部に対して局所的にレーザを照射することにより行うものであることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記熱処理は、前記半導体基板(10)の表面にワイヤボンディングを行うのと同時に実行することを特徴とする請求項4または5に記載の半導体装置の製造方法。
- 前記熱処理は、前記半導体基板(10)の表面にワイヤボンディング法によって前記ボンディングワイヤ(200)を接触させた後に、このボンディングワイヤ(200)の接触部にレーザを照射することにより実行することを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記ボンディングワイヤ(200)を構成する導電性の材料はAlであり、前記反応生成物(300)はAl−Siであることを特徴とする請求項4ないし7のいずれか1つに記載の半導体装置の製造方法。
Priority Applications (4)
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JP2006114641A JP4710700B2 (ja) | 2005-05-09 | 2006-04-18 | 半導体装置およびその製造方法 |
DE112006001152T DE112006001152B8 (de) | 2005-05-09 | 2006-04-25 | Verfahren zur Fertigung einer Halbleitervorrichtung mit Elementabschnitt |
PCT/JP2006/308605 WO2006120886A1 (ja) | 2005-05-09 | 2006-04-25 | 素子部を有する半導体装置およびその製造方法 |
US11/884,275 US20090194827A1 (en) | 2005-05-09 | 2006-04-25 | Semiconductor Device Having Element Portion and Method of Producing the Same |
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JP2005136094 | 2005-05-09 | ||
JP2005136094 | 2005-05-09 | ||
JP2006114641A JP4710700B2 (ja) | 2005-05-09 | 2006-04-18 | 半導体装置およびその製造方法 |
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JP4710700B2 true JP4710700B2 (ja) | 2011-06-29 |
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US (1) | US20090194827A1 (ja) |
JP (1) | JP4710700B2 (ja) |
DE (1) | DE112006001152B8 (ja) |
WO (1) | WO2006120886A1 (ja) |
Families Citing this family (7)
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JP4737140B2 (ja) * | 2006-10-20 | 2011-07-27 | セイコーエプソン株式会社 | Memsデバイスおよびその製造方法 |
US7737514B1 (en) * | 2008-02-21 | 2010-06-15 | Yee-Chung Fu | MEMS pressure sensor using area-change capacitive technique |
JP2010141112A (ja) * | 2008-12-11 | 2010-06-24 | Sharp Corp | 半導体装置および半導体装置の製造方法 |
US8334159B1 (en) | 2009-03-30 | 2012-12-18 | Advanced Numicro Systems, Inc. | MEMS pressure sensor using capacitive technique |
JP2015010871A (ja) * | 2013-06-27 | 2015-01-19 | 株式会社デンソー | 物理量センサ |
US9613843B2 (en) * | 2014-10-13 | 2017-04-04 | General Electric Company | Power overlay structure having wirebonds and method of manufacturing same |
US10879449B2 (en) * | 2017-05-11 | 2020-12-29 | Nihat Okulan | Semiconductor strain gauge and method of manufacturing same |
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- 2006-04-18 JP JP2006114641A patent/JP4710700B2/ja not_active Expired - Fee Related
- 2006-04-25 US US11/884,275 patent/US20090194827A1/en not_active Abandoned
- 2006-04-25 DE DE112006001152T patent/DE112006001152B8/de not_active Expired - Fee Related
- 2006-04-25 WO PCT/JP2006/308605 patent/WO2006120886A1/ja active Application Filing
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JPS5454571A (en) * | 1977-10-11 | 1979-04-28 | Toshiba Corp | Wire bonding method of semiconductor device |
JPS6153737A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | 電子装置の組立法及び組立装置 |
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DE112006001152T5 (de) | 2008-03-20 |
DE112006001152B4 (de) | 2011-09-15 |
US20090194827A1 (en) | 2009-08-06 |
WO2006120886A1 (ja) | 2006-11-16 |
JP2006344934A (ja) | 2006-12-21 |
DE112006001152B8 (de) | 2011-12-15 |
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