JP4687876B2

JP4687876B2 - Jet plating equipment

Info

Publication number: JP4687876B2
Application number: JP2005089568A
Authority: JP
Inventors: 真史後藤; 一桑島; 尚相庭; 知訓郡司
Original assignee: TDK Corp
Current assignee: TDK Corp
Priority date: 2005-03-25
Filing date: 2005-03-25
Publication date: 2011-05-25
Anticipated expiration: 2025-03-25
Also published as: JP2006265709A

Description

本発明は、プリント回路配線基板等の被めっき物に電解めっきを施すめっき装置に係り、特に、めっきを施す際に、被めっき物のフェースダウンの片面（下面）を電解めっきするのに適した噴流めっき装置に関するものである。 The present invention relates to a plating apparatus for performing electroplating on an object to be plated such as a printed circuit wiring board, and particularly suitable for electroplating one side (lower surface) of the face down of the object to be plated when performing plating. The present invention relates to a jet plating apparatus.

プリント回路配線基板あるいは半導体ウェハ等における回路配線用の導体部にめっきを施す場合、前記導体部を下向きにして電解めっきするフェースダウン方式による噴流めっき装置が知られている。 2. Description of the Related Art A face-down type jet plating apparatus that performs electroplating with a conductor portion facing downward when plating on a conductor portion for circuit wiring on a printed circuit wiring board or a semiconductor wafer is known.

この噴流めっき装置は、上方に開口し内部にめっき液を保持するめっき槽と、被めっき基板を着脱自在に下向きに保持して該被めっき基板を前記めっき槽の上部開口部を塞ぐ位置に配置する基板保持部とを有している。前記めっき槽の内部にはめっき液中に浸漬されてアノード（陽極）電極体となる平板状のアノード板が配置され、前記基板の導体部がカソード（陰極）電極体側となるようになっている。前記アノード板は、多孔質材料又は網目を有する材料で構成されている。 This jet plating apparatus has a plating tank that opens upward and holds a plating solution inside, and a substrate to be plated that is detachably held downward and is placed at a position that closes the upper opening of the plating tank. And a substrate holding part. A flat anode plate that is immersed in a plating solution to become an anode (anode) electrode body is disposed inside the plating tank, and the conductor portion of the substrate is on the cathode (cathode) electrode body side. . The anode plate is made of a porous material or a material having a mesh.

前記めっき槽の底部中央には、上方に向けためっき液の噴流を形成するめっき液噴射管が接続され、めっき槽の外側には、めっき液受けが配置されている。 A plating solution injection pipe that forms a jet of a plating solution directed upward is connected to the center of the bottom of the plating vessel, and a plating solution receiver is disposed outside the plating vessel.

そして、前記めっき槽の上部に被めっき基板を前記基板保持部で下向きに保持して配置し、アノード板と被めっき基板（カソード電極体側）の間に所定の電圧を印加しつつ、被めっき基板の下面（被めっき面）に垂直にめっき液の噴流を当てることで、アノード板と基板の間にめっき電流を流して、基板の下面にめっき膜を形成するようにしている。この時、めっき槽からオーバーフローしためっき液は、めっき液受けで回収される。 Then, the substrate to be plated is disposed on the upper part of the plating tank while being held downward by the substrate holder, and a predetermined voltage is applied between the anode plate and the substrate to be plated (cathode electrode body side). By applying a jet of the plating solution perpendicularly to the lower surface (surface to be plated), a plating current is passed between the anode plate and the substrate to form a plating film on the lower surface of the substrate. At this time, the plating solution overflowed from the plating tank is collected by the plating solution receiver.

上述のフェースダウン方式の噴流めっき装置においては、回路配線用の導体部を有する被めっき基板の品種切換によりカソード接続電極体パターン（基板下面への接触面パターン）が変わる場合、カソード接続電極体及びこれを保持する保持構造部全体を交換する必要が生じてしまう。このため、被めっき物の品種切換毎に、これに対応したカソード接続電極体及び保持構造部を準備する必要がある。さらにアノード板もめっき液にイオンを供給すると、アノード板の材料が侵食され、これも定期的に交換する必要があり、然も、保持構造部全体を交換する煩雑な作業を余儀なくされるという費用面、製造リードタイム面での欠陥が生じる。さらに、カソード接続電極体へめっき膜が形成されたり、めっき液の気泡により被めっき面のめっきが不均一（あるいはめっき無し不良）になったりする等の問題が存在している。 In the above-described face-down type jet plating apparatus, when the cathode connection electrode pattern (contact surface pattern to the lower surface of the substrate) is changed by changing the type of the substrate to be plated having the conductor portion for circuit wiring, It will be necessary to exchange the whole holding | maintenance structure part holding this. For this reason, it is necessary to prepare a cathode connection electrode body and a holding structure corresponding to each product type change of the object to be plated. In addition, if the anode plate also supplies ions to the plating solution, the material of the anode plate is eroded, and this also needs to be replaced periodically. However, the cost of complicating the complicated work of replacing the entire holding structure is required. Surface and production lead time defects occur. Furthermore, there are problems such as formation of a plating film on the cathode connection electrode body and uneven plating (or defective plating) due to air bubbles in the plating solution.

この種の噴流めっき装置の公知文献としては、下記特許文献１乃至６がある。 Known documents of this type of jet plating apparatus include the following Patent Documents 1 to 6.

特開２００１−１３１７９７号公報JP 2001-131797 A 特開２００１−４９４９５号公報JP 2001-49495 A 特開２００１−２００９６号公報Japanese Patent Laid-Open No. 2001-20096 特開平７−１２６８９５号公報JP-A-7-126895 特開平８−３１８３４号公報JP-A-8-31834 特開２０００−３１９７９７号公報JP 2000-319797 A

特許文献１は上方を開放した処理槽の上部に半導体ウェハをその被処理面を下にして保持し、カソード側の半導体ウェハの被処理面に処理液を噴流させながらアノードとの間に電流を流して半導体ウェハにめっき、化成等の処理を施す半導体製造装置において、半導体ウェハへ向かって処理液を下方から上方へ流す主流路とは別に、処理液流通方向上流側において前記主流路から分流し、その分流した流路の下流端が半導体ウェハの存在しない外部空間に開放した副流路を設け、当該副流路内にアノードを配置してなる噴流めっき装置を備えた半導体製造装置に係る。 In Patent Document 1, a semiconductor wafer is held on the upper surface of a processing tank whose upper side is opened, and the current is passed between the anode and the anode while the processing liquid is jetted onto the processing surface of the semiconductor wafer on the cathode side. In a semiconductor manufacturing apparatus that performs processing such as plating and chemical conversion on a semiconductor wafer by flowing it, the processing liquid is separated from the main flow path upstream in the flow direction of the processing liquid separately from the main flow path that flows the processing liquid from the bottom toward the semiconductor wafer. The present invention relates to a semiconductor manufacturing apparatus provided with a jet plating apparatus in which a sub-flow path is provided in an external space where the downstream end of the flow-divided flow path is not present in a semiconductor wafer and an anode is disposed in the sub-flow path.

特許文献２はめっき液を保持する円筒状のめっき槽と、該めっき槽の外部から供給されるめっき液により上方に向けためっき液の噴流を形成するめっき液噴射部と、基板を着脱自在に保持して該基板下面のめっき面がめっき液の噴流と接触するように水平に配置する基板保持部と、該基板保持部を回転及び昇降させる回転機構及び昇降機構を備えた駆動部とを具備し、該昇降機構により基板保持部を下降させた位置において該基板下面のめっき面にめっきを施すことを可能とし、該昇降機構により基板保持部を上昇させた位置において該基板保持部へ基板を取付けまたは該基板保持部から基板を取出すことを可能とした噴流めっき装置に係る。 Patent Document 2 discloses a cylindrical plating tank for holding a plating solution, a plating solution injection unit for forming a plating solution jet directed upward by a plating solution supplied from the outside of the plating vessel, and a detachable substrate. A substrate holding portion that is held and horizontally disposed so that the plating surface of the lower surface of the substrate is in contact with the jet of the plating solution, a rotation mechanism that rotates and lifts the substrate holding portion, and a drive portion that includes a lifting mechanism. Then, it is possible to plate the plating surface on the lower surface of the substrate at a position where the substrate holding portion is lowered by the lifting mechanism, and the substrate is moved to the substrate holding portion at a position where the substrate holding portion is raised by the lifting mechanism. The present invention relates to a jet plating apparatus capable of mounting or removing a substrate from the substrate holding portion.

特許文献３は被めっき基板のめっきを施すめっき面外周に当接するリング状のシール部材を具備し、該被めっき基板のめっき面を露出させ、且つ該めっき面を下に向けて保持する基板保持具を具備し、めっき液の充満しためっき槽内で基板保持具に保持された被めっき基板の下方から該被めっき基板のめっき面に達するめっき液噴流を生成しながらめっきを行うめっき装置において、基板保持具の下端部に被めっき基板のめっき面に残留する気泡を該基板保持具の外側に逃がす通気孔を設けた噴流めっき装置に係る。 Patent Document 3 includes a ring-shaped sealing member that abuts on the outer periphery of a plating surface on which a substrate to be plated is plated, and exposes the plating surface of the substrate to be plated and holds the plating surface downward. A plating apparatus for performing plating while generating a plating solution jet reaching the plating surface of the substrate to be plated from below the substrate to be plated held in the substrate holder in the plating tank filled with the plating solution. The present invention relates to a jet plating apparatus in which an air hole for allowing bubbles remaining on a plating surface of a substrate to be plated to escape to the outside of the substrate holder is provided at a lower end portion of the substrate holder.

特許文献４は噴流式の電気めっきにおいて、被めっき基板よりも大きい横断面の筒状体の一方の端面を被めっき基板保持部材で閉塞し、他方の端面をめっき液流入口とした電気めっきセルを用いるが、基板保持部材の代わりに参照用基板を用いて噴流式の電気めっきを行ってめっき膜厚がピークとなる環状領域の内側の膜厚均一領域を見いだしておき、以後その膜厚均一領域に対応させて前記被めっき基板を配置するめっき方法に係る。これにより、めっき膜厚の均一性を向上させると述べている。 Patent Document 4 discloses an electroplating cell in jet type electroplating in which one end face of a cylindrical body having a cross section larger than that of a substrate to be plated is closed with a substrate holding member to be plated and the other end face is used as a plating solution inlet. However, jet-type electroplating is performed using a reference substrate instead of the substrate holding member to find a uniform film thickness region inside the annular region where the plating film thickness reaches a peak, and thereafter the uniform film thickness is obtained. The present invention relates to a plating method in which the substrate to be plated is arranged corresponding to a region. This states that the uniformity of the plating film thickness is improved.

特許文献５は多孔ノズルを用いた噴流めっき装置であり、多数の噴流口を有する多孔ノズルは内部にアノードとなる銅電極が配置されており、めっき液流量、被めっき面の電流密度に配慮することで、めっき液に添加剤を用いることなく、均一なめっき形成を可能にすると述べている。 Patent Document 5 is a jet plating apparatus using a multi-hole nozzle, and a multi-hole nozzle having a large number of jet openings has a copper electrode serving as an anode inside, and considers the plating solution flow rate and the current density of the surface to be plated. Therefore, it is stated that uniform plating can be formed without using an additive in the plating solution.

特許文献６はめっき槽で被めっき基板のめっき面にめっき液を接触させて金属めっきを施すめっき装置において、被めっき基板を回転させながら保持できる回転式基板保持機構、これに対向してめっき液の噴流を発生する多孔ノズル、多孔ノズル背後の扁平陽極槽（めっき液導入室）及び前記多孔ノズルにおけるノズル穴形状によってめっき液の圧力の上昇及び下降を可能とする方法が記載されている。 Patent Document 6 discloses a rotating substrate holding mechanism that can hold a substrate to be plated while rotating in a plating apparatus that performs metal plating by bringing a plating solution into contact with a plating surface of a substrate to be plated in a plating tank, and a plating solution facing this. And a method of enabling the pressure of the plating solution to be raised and lowered by the shape of the nozzle hole in the porous nozzle and the flat anode tank (plating solution introduction chamber) behind the porous nozzle and the porous nozzle.

ところで、特許文献１乃至６において共通する問題は、被めっき物の品種切換によりアノード電極体が変わる場合、アノード電極体を交換する必要があるが、交換作業性を良好にするための対策は開示されていない。 By the way, a problem common to Patent Documents 1 to 6 is that when the anode electrode body changes due to the change of the type of the object to be plated, it is necessary to replace the anode electrode body, but measures for improving the replacement workability are disclosed. It has not been.

更に、特許文献２及び特許文献３においては、めっき作業の過程で発生する気泡を通気
孔を通してめっき槽の外側に逃がすという手段が設けられているが、積極的な消泡手段が
設けられていない。このため、被めっき基板面に残留する気泡の影響により、被めっき面
全体でめっきが不均一になるという品質面での欠陥が生じる問題がある。 Furthermore, in Patent Document 2 and Patent Document 3, there is provided means for allowing bubbles generated during the plating process to escape to the outside of the plating tank through the vent hole, but no positive defoaming means is provided. . For this reason, there is a problem in that a defect in quality occurs in that plating is not uniform over the entire surface to be plated due to the influence of bubbles remaining on the surface of the substrate to be plated.

また、特許文献４においては、めっきの膜厚分布を均一化するために、被めっき基板を膜厚均一領域に設定するという方法が開示されているが、めっきの膜厚がピークとなる環状領域を避けて被めっき基板を配置するため、装置が大型化するという問題がある。 Further, Patent Document 4 discloses a method of setting a substrate to be plated in a uniform film thickness region in order to make the plating film thickness distribution uniform, but an annular region in which the plating film thickness reaches a peak. Therefore, there is a problem that the apparatus is increased in size because the substrate to be plated is arranged avoiding the above.

また、特許文献１乃至６において共通する問題は、被めっき物は基板のビアホールで、その目的がビアホール充填の場合、小径かつ多数のビアホールに如何に高速に安定して均質な柱状導体を形成するかという点については開示されていない。 Further, the common problem in Patent Documents 1 to 6 is that when the object to be plated is a via hole of a substrate, and the purpose is to fill the via hole, a uniform columnar conductor can be stably formed at a high speed in a small number of via holes. This is not disclosed.

本発明の第１の目的は、多層基板等のビアホールをめっきで充填する場合、高速に安定して均質な充填を行うことができる噴流めっき装置を提供することにある。 A first object of the present invention is to provide a jet plating apparatus capable of performing uniform filling stably at high speed when filling a via hole such as a multilayer substrate by plating.

本発明の第２の目的は、アノード電極体及びその周辺部機構を改善することにより、交換頻度の多いアノード電極体の交換作業の簡素化を図り、製造リードタイム面で優れた噴流めっき装置を提供することにある。 The second object of the present invention is to improve the anode electrode body and its peripheral mechanism, thereby simplifying the replacement work of the anode electrode body that is frequently replaced, and providing a jet plating apparatus that is excellent in terms of manufacturing lead time. It is to provide.

本発明の第３の目的は、めっき液中に残留する気泡を効果的、効率的に消泡し、被めっき面全体のめっき膜厚の均一化を図り、品質面及び製造原価面で優れた噴流めっき装置を提供することにある。 The third object of the present invention is to effectively and efficiently eliminate bubbles remaining in the plating solution, to achieve uniform plating film thickness on the entire surface to be plated, and is excellent in terms of quality and manufacturing cost. It is to provide a jet plating apparatus.

本発明のその他の目的や新規な特徴は後述の実施の形態において明らかにする。 Other objects and novel features of the present invention will be clarified in embodiments described later.

上記目的を達成するために、第１の発明は、めっき液の噴流を発生させる噴流めっき槽の開口側に、被めっき基板の導体部を下向きとして配置し、前記導体部にめっき液を噴流させながら前記導体部をカソード電極体として、前記カソード電極体とアノード電極体に電流を付与してめっきする噴流めっき装置であって、
前記アノード電極体は、前記被めっき基板に対向する側がノズル穴を設けた平面であって、めっき液を噴出する噴流ノズルを兼ね、
前記被めっき基板は１００ｍｍ×１００ｍｍ乃至２５０ｍｍ×２５０ｍｍのサイズであって、
前記噴流ノズルと前記被めっき基板とで１５ｍｍ〜２５ｍｍの距離で挟まれためっき液室と、めっき液を前記めっき液室から槽外へ排出する排出流路とを有し、前記排出流路の入口側の断面積が出口側の断面積より広く、
前記めっき液室内の液圧を上昇させるために、前記排出流路の出口側の最も狭い所の断面積の総和と、前記噴流ノズルのノズル穴の開口面積の総和とを比較したとき、前記出口側の最も狭い所の断面積の総和の方が小さく、前記ノズル穴の開口面積の総和に対する、前記出口側の最も狭い所の断面積の総和の比が０．３〜０．９であることを特徴としている。 In order to achieve the above object, according to a first aspect of the present invention, a conductor portion of a substrate to be plated is disposed on the opening side of a jet plating tank that generates a jet of plating solution, and the plating solution is jetted into the conductor portion. While the conductor portion is a cathode electrode body, a jet plating apparatus for plating by applying a current to the cathode electrode body and the anode electrode body,
The anode electrode body is a plane provided with nozzle holes on the side facing the substrate to be plated, and also serves as a jet nozzle that ejects a plating solution,
The substrate to be plated has a size of 100 mm × 100 mm to 250 mm × 250 mm,
A plating solution chamber sandwiched between the jet nozzle and the substrate to be plated at a distance of 15 mm to 25 mm; and a discharge channel for discharging the plating solution from the plating solution chamber to the outside of the tank . The cross-sectional area on the inlet side is wider than the cross-sectional area on the outlet side,
To increase the fluid pressure of the plating liquid chamber, when compared with the sum of the cross-sectional areas of the narrowest at the outlet side of the discharge passage, and a sum of the opening area of the nozzle hole of the jet nozzle, said outlet The sum of the cross-sectional areas of the narrowest part on the side is smaller, and the ratio of the sum of the cross-sectional areas of the narrowest part on the outlet side to the sum of the opening areas of the nozzle holes is 0.3 to 0.9 It is characterized by.

第２の発明は、前記第１の発明において、前記アノード電極体の前記被めっき基板側への対向露出面積と、前記被めっき基板のめっき液に接する対向面積の比が１：０．９〜１：１．１の範囲であることを特徴としている。 The second invention is the first invention, and the opposite exposed area to the object to be plated substrate side of the anode electrode, the ratio of the opposing area in contact with the plating solution of the object to be plated substrate 1: 0.9 It is characterized by being in a range of 1: 1.1.

第３の発明は、前記第１の発明において、前記排出流路を構成する前記被めっき基板側の流路面を前記排出流路の天井としたとき、前記排出流路の入口側の天井の入り口から出口に向かう断面形状は円弧形状であって、前記入口側の天井は出口側に向かって低くなり、前記排出流路の入口部分は円弧の接線が当該排出流路の出口側を構成する天井と略平行であることを特徴としている。 The third invention is the in the first aspect, when the passage surface of the object to be plated substrate side constituting the discharge channel and the ceiling of the discharge channel, the inlet of the ceiling inlet side of the exhaust passage The cross-sectional shape from the outlet to the outlet is an arc shape, the ceiling on the inlet side becomes lower toward the outlet side, and the inlet portion of the discharge channel is a ceiling whose tangent line of the arc forms the outlet side of the discharge channel It is characterized by being substantially parallel to.

第４の発明は、前記第１乃至第３の発明において、前記噴流めっき槽は、前記固定カソード接続電極部と前記アノード電極体とを取り付けたスパージャ部と、該スパージャ部よりも下側の槽本体部とに分割されていて、前記アノード電極体が交換自在であることを特徴としている。 According to a fourth aspect of the present invention, in the first to third aspects, the jet plating tank includes a sparger portion to which the fixed cathode connection electrode portion and the anode electrode body are attached, and a bath below the sparger portion. It is divided into a main body and the anode electrode body is replaceable.

本発明に係る噴流めっき装置によれば、被めっき基板に１５ｍｍ乃至２５ｍｍの比較的近距離に対向配置された噴流ノズルによるめっき液の高流速の噴射により、多層基板等のビアホール内にめっきを生成する際に、ビアホールの底部まで確実にめっき液を供給することができ、膜厚分布も５％以内に収めることができる（後述の表１参照）。 According to the jet plating apparatus according to the present invention, plating is generated in a via hole of a multilayer substrate or the like by spraying a plating solution at a high flow rate with a jet nozzle disposed opposite to the substrate to be plated at a relatively short distance of 15 mm to 25 mm. In this case, the plating solution can be reliably supplied to the bottom of the via hole, and the film thickness distribution can be kept within 5% (see Table 1 described later).

更に、前記噴流ノズルをアノード電極材料で製作し、アノード電極体として作用させれば、めっき液中のイオンを損失無く効率的にビアホール底部まで届かせることが可能となる。さらにアノード電極材料を含リン銅とすることにより、電流密度を上げることができ、柱状電極の成長を早めることが可能となる（後述の表５参照）。 Furthermore, if the jet nozzle is made of an anode electrode material and acts as an anode electrode body, ions in the plating solution can be efficiently delivered to the bottom of the via hole without loss. Furthermore, by using phosphorous copper as the anode electrode material, the current density can be increased and the growth of the columnar electrode can be accelerated (see Table 5 described later).

更に、前記アノード電極体の前記被めっき基板側への対向露出面積と、前記被めっき基板のめっき液に接する対向面積（めっき範囲の面積）との比を、１：０．９〜１：１．１の範囲とすれば膜厚分布の良い均質なめっきを形成できる（後述の表２参照）。 Furthermore, the ratio of the opposed exposed area of the anode electrode body to the substrate to be plated and the opposed area in contact with the plating solution of the substrate to be plated (area of the plating range) is 1: 0.9 to 1: 1. When the thickness is in the range of 1, uniform plating with a good film thickness distribution can be formed (see Table 2 described later).

また、めっき液を噴出する噴流ノズルと被めっき基板とで挟まれためっき液室からめっき液を排出する排出流路の狭隘部（排出流路の出口側の最も狭い所の）断面積の総和と、前記噴流ノズルのノズル穴の開口面積の総和との比の値が０．３〜０．９である場合、さらに膜厚分布の良化（３％以内に収める）に効果がある。これは、基板と噴流ノズルの間の槽内の液圧が上昇し、斑の無いめっきを可能とするためである（後述の表３参照）。 Also, the sum of the cross-sectional area of the narrow part of the discharge channel (at the narrowest part on the outlet side of the discharge channel) that discharges the plating solution from the plating solution chamber sandwiched between the jet nozzle that ejects the plating solution and the substrate to be plated And the ratio of the total opening area of the nozzle holes of the jet nozzle is 0.3 to 0.9, the film thickness distribution is further improved (within 3%). This is because the liquid pressure in the tank between the substrate and the jet nozzle is increased to enable plating without spots (see Table 3 described later).

更に、本発明に係る噴流めっき装置によれば、アノード電極体を被めっき物の直下に噴流ノズルと一体化して、カソード電極体（固定電極部）及びその支持部分と共に交換自在にしており、アノード電極体の侵食による交換作業の簡素化を図ることができ、コスト削減及び製造リードタイムの短縮に寄与可能である。 Furthermore, according to the jet plating apparatus according to the present invention, the anode electrode body is integrated with the jet nozzle directly under the object to be plated, and can be exchanged together with the cathode electrode body (fixed electrode portion) and its supporting portion. The replacement work due to the erosion of the electrode body can be simplified, which can contribute to cost reduction and shortening of manufacturing lead time.

更に、めっき液の排出流路においてめっき液中に含まれる気泡を除去する機構を設けるようにすれば、めっき液中の気泡を効果的、効率的に消去でき、気泡付着に起因するめっき不良を除去し、被めっき面全体のめっき均一化を図ることができ、品質向上を図ることが可能である（後述の表４参照）。 Furthermore, if a mechanism for removing bubbles contained in the plating solution is provided in the plating solution discharge flow path, the bubbles in the plating solution can be effectively and efficiently erased, and defective plating due to bubble adhesion can be eliminated. It is possible to remove it and make uniform plating over the entire surface to be plated, and it is possible to improve the quality (see Table 4 described later).

以下、本発明を実施するための最良の形態として、噴流めっき装置の実施の形態を図面に従って説明する。 Hereinafter, as a best mode for carrying out the present invention, an embodiment of a jet plating apparatus will be described with reference to the drawings.

図１〜図５を用いて本発明に係る噴流めっき装置の実施の形態を説明する。噴流めっき装置は、被めっき物としての被めっき基板１の導体部を下向きとして、カソード接続電極体３０を分割した固定側の固定カソード接続電極部３１にて支持するフェースダウン方式であり、カソード接続電極体３０を分割した可動側の給電電極部４０は押さえ板２０に設けられている。そして、被めっき基板１の導体部にめっき液Ｒ１を噴流させながら噴流ノズルと一体となった（噴流ノズルを兼ねた）アノード電極体５、被めっき基板１の導体部（カソード電極体として機能する）、これに電気的に接続する固定カソード接続電極部３１、押さえ板２０の下降時に前記固定カソード接続電極部３１に電気的に接続する給電電極部４０の経路にてめっき電流を流すことにより被めっき基板１の導体部に電解めっきを施す構成である（なお、図１は押さえ板２０が上昇した状態を図示している）。 An embodiment of a jet plating apparatus according to the present invention will be described with reference to FIGS. The jet plating apparatus is a face-down method in which the conductor part of the substrate 1 to be plated as the object to be plated is faced down and is supported by the fixed cathode connection electrode part 31 on the fixed side where the cathode connection electrode body 30 is divided. The movable-side feeding electrode portion 40 obtained by dividing the electrode body 30 is provided on the pressing plate 20. Then, the anode electrode body 5 integrated with the jet nozzle (also serving as the jet nozzle) while jetting the plating solution R1 onto the conductor portion of the substrate 1 to be plated, and the conductor portion (cathode electrode body) of the substrate 1 to be plated. ), And by supplying a plating current through the path of the fixed cathode connection electrode portion 31 electrically connected to the fixed cathode connection electrode portion 31 and the feed electrode portion 40 electrically connected to the fixed cathode connection electrode portion 31 when the holding plate 20 is lowered. It is the structure which electroplats to the conductor part of the plating board | substrate 1 (In addition, FIG. 1 has illustrated the state which the pressing plate 20 raised).

めっき液の噴流を発生するための噴流めっき槽１０は、固定カソード接続電極部３１と噴流ノズルを兼ねたアノード電極体（以下、ノズル兼用アノード電極体という）５とを取り付けたスパージャ部１０Ａと、該スパージャ部１０Ａよりも下側の槽本体部１０Ｂとに分割されていて、槽本体部１０Ｂに対してスパージャ部１０Ａは着脱自在（交換自在）に嵌合、装着される。図示しないが、スパージャ部１０Ａと槽本体部１０Ｂの嵌合部分は水密構造である。 A spout plating tank 10 for generating a jet of plating solution includes a sparger portion 10A to which a fixed cathode connection electrode portion 31 and an anode electrode body (hereinafter referred to as a nozzle / anode electrode body) 5 also serving as a jet nozzle are attached. The sparger portion 10A is divided into a tank body portion 10B below the sparger portion 10A, and the sparger portion 10A is detachably fitted (replaceable) to the tank body portion 10B. Although not shown, the fitting portion between the sparger portion 10A and the tank body portion 10B has a watertight structure.

前記噴流めっき槽１０の最上部（つまりスパージャ部１０Ａの最上部）は固定カソード接続電極部３１を保持するカソード固定支持部１５となっている。固定カソード接続電極部３１は固定導電ブロック３２と、固定導電ブロック３２に対して螺子３３により交換自在に取り付けられていて、被めっき基板１の導体部に接触するカソード交換電極３４（例えば断面略Ｌ字形状である）とを有している。固定導電ブロック３２は常にカソード固定支持部１５に固定されている。ここで、被めっき基板１の導体部パターンが変わるときに交換する必要があるのは、被めっき基板１の導体部パターンに対応した形状のカソード交換電極３４に限られる。 The uppermost portion of the jet plating tank 10 (that is, the uppermost portion of the sparger portion 10A) is a cathode fixing support portion 15 that holds the fixed cathode connection electrode portion 31. The fixed cathode connection electrode portion 31 is attached to the fixed conductive block 32 and the fixed conductive block 32 by screws 33 so as to be exchangeable, and a cathode exchange electrode 34 (for example, substantially L in cross section) that contacts the conductor portion of the substrate 1 to be plated. It is a character shape). The fixed conductive block 32 is always fixed to the cathode fixing support portion 15. Here, what needs to be replaced when the conductor pattern of the substrate to be plated 1 changes is limited to the cathode exchange electrode 34 having a shape corresponding to the conductor pattern of the substrate 1 to be plated.

噴流されるめっき液Ｒ１により、固定カソード接続電極部３１へめっき膜が形成されたり、被めっき基板１の側面や裏面が金属汚染されたりすることのないように、カソード交換電極３４の内周側にはゴム等の弾性体シール３５が、下側には、補強用絶縁板３６を介してゴム等の弾性体シール３７がそれぞれ配設される。 An inner peripheral side of the cathode exchange electrode 34 so that a plating film is not formed on the fixed cathode connection electrode portion 31 and the side surface and back surface of the substrate 1 to be plated are not contaminated with metal by the jetting plating solution R1. An elastic seal 35 made of rubber or the like is disposed on the lower side, and an elastic seal 37 made of rubber or the like is disposed on the lower side via a reinforcing insulating plate 36.

前記押さえ板２０は、図示しないエアーシリンダ等で昇降自在であり、めっきの作業中に被めっき基板１が、浮き上がったり、反ったり、撓んだりすることのないように、固定カソード接続電極部３１で支持された被めっき基板１の上面に下降して圧接する。 The pressing plate 20 can be moved up and down by an air cylinder (not shown), and the fixed cathode connecting electrode portion 31 prevents the substrate 1 to be plated from being lifted, warped or bent during the plating operation. Is lowered and pressed against the upper surface of the substrate 1 to be plated.

また、前記押さえ板２０には、図３のように、圧縮ばね（コイルばね）２１及び給電電極部４０を有する昇降給電部４５が、例えば４箇所に設けられている。 Further, as shown in FIG. 3, the holding plate 20 is provided with elevating and lowering power supply portions 45 having compression springs (coil springs) 21 and power supply electrode portions 40 at, for example, four locations.

めっき動作のために前記押さえ板２０が下降して被めっき基板１を押さえた状態となると、各昇降給電部４５の給電電極部４０は押さえ板２０に対して下方に突出する向きに独立懸架式に圧縮ばね（コイルばね）２１で付勢されているため、給電電極部４０が固定導電ブロック３２に押圧接触し、電気的接続が行われる。この結果、給電電極部４０を介して固定カソード接続電極部３１に直流電圧が給電される。なお、固定導電ブロック３２と給電電極部４０の接触部は被めっき基板１の種類にかかわらず共通構造とする。 When the pressing plate 20 is lowered to press the substrate to be plated 1 for the plating operation, the feeding electrode portion 40 of each lifting power feeding portion 45 is independently suspended so as to protrude downward with respect to the pressing plate 20. Since the compression spring (coil spring) 21 is urged, the power supply electrode portion 40 comes into pressure contact with the fixed conductive block 32 and electrical connection is made. As a result, a DC voltage is supplied to the fixed cathode connection electrode part 31 via the power supply electrode part 40. The contact portion between the fixed conductive block 32 and the feeding electrode portion 40 has a common structure regardless of the type of the substrate 1 to be plated.

また、前記噴流めっき槽１０には、めっき液Ｒ１の噴出孔（貫通孔）１１ａを備えた分散板１１、めっき液Ｒ１の噴出孔（貫通孔）１２ａを備えた分散板１２、めっき液Ｒ１のノズル穴（貫通孔）５ａを備えるノズル兼用アノード電極体５がそれぞれ噴流めっき槽１０の下部方向から順に水平に配置、固定されている。各分散板１１，１２は被めっき基板１の被めっき面に対応した広範囲の噴流を作成するために設けられる。噴流めっき槽１０の底部に設けられためっき液供給管１３から噴出しためっき液Ｒ１は、噴出孔１１ａ、噴出孔１２ａ、ノズル兼用アノード電極体５と被めっき基板１とで挟まれためっき液室に開口するノズル穴５ａを通過し、被めっき基板１の導体部に噴流となって当たる（接触する）。そして、めっき作用に使われた後のめっき液Ｒ２は、固定カソード接続電極部３１を保持する噴流めっき槽１０のカソード固定支持部１５とノズル兼用アノード電極体５の間に形成された排出流路１４から排出され、噴流めっき槽１０の周囲を囲む受け槽（上槽）５０にて貯留される。 The jet plating tank 10 includes a dispersion plate 11 provided with a spray hole (through hole) 11a for the plating solution R1, a dispersion plate 12 provided with a spray hole (through hole) 12a for the plating solution R1, and a plating solution R1. Nozzle and anode electrode bodies 5 each having a nozzle hole (through hole) 5a are horizontally arranged and fixed in order from the lower direction of the jet plating tank 10 respectively. Each of the dispersion plates 11 and 12 is provided to create a wide range of jets corresponding to the surface to be plated of the substrate 1 to be plated. The plating solution R1 ejected from the plating solution supply pipe 13 provided at the bottom of the jet plating tank 10 is a plating solution chamber sandwiched between the ejection hole 11a, the ejection hole 12a, the nozzle-use anode electrode body 5 and the substrate 1 to be plated. It passes through the nozzle hole 5a that opens to the surface of the substrate 1 and hits (contacts) the conductor portion of the substrate 1 to be plated. The plating solution R2 after being used for the plating action is a discharge channel formed between the cathode fixing support portion 15 of the jet plating tank 10 that holds the fixed cathode connection electrode portion 31 and the nozzle / anode electrode body 5. 14 and stored in a receiving tank (upper tank) 50 surrounding the jet plating tank 10.

この時、下記表１に示すように、めっき膜厚の均一化の観点から、ノズル兼用アノード電極体５と基板１との距離は、１５ｍｍ〜２５ｍｍであることが望ましい。 At this time, as shown in Table 1 below, the distance between the nozzle / anode electrode body 5 and the substrate 1 is desirably 15 mm to 25 mm from the viewpoint of uniform plating film thickness.

表１によれば、１５ｍｍ〜２５ｍｍの範囲でめっき膜厚のバラツキが５％以下となっている。

According to Table 1, the variation of the plating film thickness is 5% or less in the range of 15 mm to 25 mm.

また、同じくめっき膜厚の均一化の観点から下記表２に示すように、ノズル兼用アノード電極体５の基板１側への対向露出面積（基板１側に対向しかつ露出した面積）と、基板１のめっき範囲の面積（アノード電極体側へ対向しかつめっき液が接する面積）との比は１：０．９〜１：１．１であることが望ましい。 Similarly, from the viewpoint of uniform plating film thickness, as shown in Table 2 below, the opposite exposed area of the nozzle / anode electrode body 5 facing the substrate 1 (the area facing and exposed to the substrate 1), and the substrate It is desirable that the ratio with the area of the plating range of 1 (the area facing the anode electrode body side and in contact with the plating solution) is 1: 0.9 to 1: 1.1.

表２によれば、前記比が１：０．９〜１：１．１の範囲内であれば、バラツキは小さいが、その範囲外となると膜厚バラツキが増大してしまうことがわかる。

According to Table 2, when the ratio is within the range of 1: 0.9 to 1: 1.1, the variation is small, but when the ratio is out of the range, the variation in the film thickness increases.

更に、下記表３に示すように、ノズル兼用アノード電極体５と基板１とで挟まれためっき液室からめっき液を排出する排出流路１４の狭隘部（図４の説明で後述する出口側の最も狭い所）の断面積の総和と、前記めっき液室にめっき液を噴出するノズル穴５ａの開口面積の総和との比の値は０．３〜０．９が望ましい。 Further, as shown in Table 3 below, a narrow portion of the discharge flow path 14 for discharging the plating solution from the plating solution chamber sandwiched between the nozzle / anode electrode body 5 and the substrate 1 (the outlet side described later in the description of FIG. 4). The ratio of the sum of the cross-sectional areas of the narrowest part) and the sum of the opening areas of the nozzle holes 5a for ejecting the plating solution into the plating solution chamber is preferably 0.3 to 0.9.

表３によれば、前記比の値が０．３〜０．９の範囲内であれば、めっき膜厚のバラツキが３％以下となっている。

According to Table 3, if the value of the ratio is in the range of 0.3 to 0.9, the variation in the plating film thickness is 3% or less.

なお、表１の場合、ノズル兼用アノード電極体５の基板１側への対向露出面積と、基板１のめっき範囲の面積との比は１：１とし、かつ排出流路１４の狭隘部の断面積の総和と、ノズル穴５ａの開口面積の総和との比の値は１として測定した。 In the case of Table 1, the ratio of the exposed area of the nozzle / anode electrode body 5 facing the substrate 1 to the area of the plating range of the substrate 1 is 1: 1, and the narrow portion of the discharge channel 14 is cut off. The value of the ratio between the total area and the total opening area of the nozzle holes 5a was measured as 1.

表２の場合、ノズル兼用アノード電極体５と基板１との距離は２０ｍｍとし、かつ排出流路１４の狭隘部の断面積の総和と、ノズル穴５ａの開口面積の総和との比の値は１として測定した。 In the case of Table 2, the distance between the nozzle combined anode electrode body 5 and the substrate 1 is 20 mm, and the value of the ratio between the sum of the cross-sectional areas of the narrow portions of the discharge flow path 14 and the sum of the opening areas of the nozzle holes 5a is Measured as 1.

表３の場合、ノズル兼用アノード電極体５と基板１との距離は２０ｍｍとし、ノズル兼用アノード電極体５の基板１側への対向露出面積と、基板１のめっき範囲の面積との比は１：１として測定した。 In the case of Table 3, the distance between the nozzle / anode electrode body 5 and the substrate 1 is 20 mm, and the ratio of the area exposed to the substrate 1 side of the nozzle / anode electrode body 5 to the area of the plating range of the substrate 1 is 1. : 1.

なお、本実施の形態の被めっき基板１のサイズはおよそ１４０ｍｍ×１４０ｍｍであるが、前記条件は１００ｍｍ×１００ｍｍ乃至２５０ｍｍ×２５０ｍｍ、好ましくは２００ｍｍ×２００ｍｍまでの基板であっても均一化の効果はある。 In addition, although the size of the to-be-plated board | substrate 1 of this Embodiment is about 140 mm x 140 mm, the said conditions are 100 mm x 100 mm thru | or 250 mm x 250 mm, Preferably even if it is a board | substrate to 200 mm x 200 mm, the effect of equalization is is there.

図４の側断面図及び図５の底面図に示されるように、噴流めっき槽１０の最上部（つまりスパージャ部１０Ａの最上部）の方形枠状のカソード固定支持部１５の底面に排出流路１４が多数形成されている。すなわち、ノズル兼用アノード電極体５と基板１とで挟まれためっき液室の側面となる方形枠状のカソード固定支持部１５の４つの内側側面に多数の排出流路１４が四方に同数開口する配置であり、排出流路１４の出口側は方形枠状のカソード固定支持部１５の底面を塞ぐ閉鎖板１６で狭隘部となるように絞られている。なお、方形枠状のカソード固定支持部１５の内側はアノード電極体５を被めっき基板１に対面させるための抜き穴となっている。 As shown in the side sectional view of FIG. 4 and the bottom view of FIG. 5, the discharge channel is formed on the bottom of the rectangular frame-like cathode fixing support 15 at the top of the jet plating tank 10 (that is, the top of the sparger 10A). Many 14 are formed. That is, the same number of discharge channels 14 are opened in four directions on the four inner side surfaces of the rectangular frame-shaped cathode fixing support portion 15 which is the side surface of the plating solution chamber sandwiched between the nozzle / anode electrode body 5 and the substrate 1. The outlet side of the discharge channel 14 is narrowed by a closing plate 16 that closes the bottom surface of the rectangular frame-shaped cathode fixing support portion 15 to be a narrow portion. In addition, the inside of the rectangular frame-shaped cathode fixing support portion 15 is a hole for allowing the anode electrode body 5 to face the substrate 1 to be plated.

図４の側断面図の通り、各排出流路１４の天井Ｔには部分的な円弧加工が施されている。すなわち、排出流路１４を構成する基板１側の流路面（天井Ｔ）において入口側の断面形状は円弧形状であって、排出流路１４の入口部分は円弧の接線が当該排出流路１４と略平行である。また、排出流路１４の入口側の断面積が出口側の断面積より広くなっている。これは気泡溜まりを防ぐために有効な加工形状で、基板１まで上昇した気泡がめっき液Ｒ１の流れに乗って排出流路１４の入口に溜まるのを、この排出流路１４の天井Ｔの円弧加工でスムースに排出流路１４の出口へ導出し、基板１の下面周囲に気泡が溜まるのを防止する。この効果で斑の無いめっきが可能となっている。なお、前記天井Ｔは排出流路１４の出口側で低い一定高さとなっており、ここが排出流路１４の狭隘部（出口側の最も狭い所）である。 As shown in the side sectional view of FIG. 4, the ceiling T of each discharge channel 14 is partially arc-processed. That is, the cross-sectional shape on the inlet side of the flow path surface (ceiling T) on the substrate 1 side constituting the discharge flow path 14 is an arc shape, and the inlet portion of the discharge flow path 14 has an arc tangent to the discharge flow path 14 It is almost parallel. Further, the sectional area on the inlet side of the discharge channel 14 is wider than the sectional area on the outlet side. This is an effective machining shape for preventing the accumulation of bubbles, and the bubbles rising up to the substrate 1 ride on the flow of the plating solution R1 and accumulate at the inlet of the discharge channel 14, and arc processing of the ceiling T of the discharge channel 14 As a result, the air is smoothly led to the outlet of the discharge channel 14 to prevent bubbles from being accumulated around the lower surface of the substrate 1. This effect enables plating without spots. The ceiling T has a low and constant height on the outlet side of the discharge passage 14, and this is the narrow portion (the narrowest portion on the outlet side) of the discharge passage 14.

前述したように、排出流路１４から排出されためっき液は図２のように受け槽（上槽）５０にて貯留され、この受け槽５０で貯留されためっき液Ｒ２の上澄み液は、受け槽５０の底部を貫通して受け槽底面よりも高く突出しためっき液戻り管５１を経由して下方位置の静液槽（下槽）６０に戻される（重力で流れ落ちる）。静液槽６０の側面にはめっき液供給管１３の一端が接続され、他端が受け槽５０を貫通して噴流めっき槽１０の底部に接続される。また、静液槽６０内に、仕切り板６２がめっき液供給管１３の接続口近傍で、めっき液戻り管５１と前記接続口間に位置するように略垂直に設けられている。この仕切り板６２は、気泡を含んだめっき液が直接めっき液供給管１３に入り込まないようにする。めっき液供給管１３の途中にはポンプ７０とフィルタ７５が挿入されており、静液槽６０に貯留されためっき液Ｒ２はポンプ７０で汲み上げられ、フィルタ７５で浮遊物が除去されてめっき液Ｒ１として噴流めっき槽１０に送出されることになる。 As described above, the plating solution discharged from the discharge channel 14 is stored in the receiving tank (upper tank) 50 as shown in FIG. 2, and the supernatant of the plating solution R2 stored in the receiving tank 50 is received. It returns to the still liquid tank (lower tank) 60 in the lower position via the plating solution return pipe 51 that penetrates the bottom of the tank 50 and protrudes higher than the bottom surface of the receiving tank (flows down by gravity). One end of the plating solution supply pipe 13 is connected to the side surface of the hydrostatic bath 60, and the other end passes through the receiving bath 50 and is connected to the bottom of the jet plating bath 10. In addition, a partition plate 62 is provided in the still liquid tank 60 in the vicinity of the connection port of the plating solution supply pipe 13 so as to be positioned between the plating solution return pipe 51 and the connection port. The partition plate 62 prevents the plating solution containing bubbles from directly entering the plating solution supply pipe 13. A pump 70 and a filter 75 are inserted in the middle of the plating solution supply pipe 13, and the plating solution R2 stored in the still liquid bath 60 is pumped up by the pump 70, and the suspended matter is removed by the filter 75 to remove the plating solution R1. Will be sent to the jet plating tank 10.

なお、図６にアノード電極体５への給電構造の１例を、カソード電極体（被めっき基板１の導体部）への給電構造と共に説明する。アノード電極体５を取り付けかつ電気的な接続を行うための固定アノード接続電極部６がスパージャ部１０Ａに設けられている。そして、この固定アノード接続電極部６に対して接離自在に昇降アノード給電電極部７が押さえ板２０に設けられている。めっき動作のために押さえ板２０が下降して被めっき基板１を押さえた状態となると、固定アノード接続電極部６と昇降アノード給電電極部７とが互いに接触して、昇降アノード給電電極部７、固定アノード接続電極部６を介してアノード電極体５に給電されることになる。同時に、カソード電極体としての被めっき基板１の導体部には、給電電極部４０、固定カソード接続電極部３１を介して給電される。 FIG. 6 illustrates an example of a power feeding structure to the anode electrode body 5 together with a power feeding structure to the cathode electrode body (conductor portion of the substrate 1 to be plated). A fixed anode connecting electrode portion 6 for attaching and electrically connecting the anode electrode body 5 is provided in the sparger portion 10A. A lifting anode feeding electrode portion 7 is provided on the holding plate 20 so as to be able to contact with and separate from the fixed anode connection electrode portion 6. When the pressing plate 20 is lowered for the plating operation to hold the substrate 1 to be plated, the fixed anode connecting electrode portion 6 and the lifting anode feeding electrode portion 7 come into contact with each other, and the lifting anode feeding electrode portion 7, Power is supplied to the anode electrode body 5 through the fixed anode connection electrode portion 6. At the same time, power is supplied to the conductor portion of the substrate 1 to be plated as the cathode electrode body through the power supply electrode portion 40 and the fixed cathode connection electrode portion 31.

この実施の形態に示した噴流めっき装置の全体的な動作説明を行う。 The overall operation of the jet plating apparatus shown in this embodiment will be described.

まず、噴流めっき槽１０の上部開口を塞ぐように被めっき基板１を配置し、固定カソード接続電極部３１にて被めっき基板１を下方から支持する。このとき固定カソード接続電極部３１の一部を構成するカソード交換電極３４が被めっき基板１の導体部に電気的に接続した状態となる。次いで、押さえ板２０が下降して被めっき基板１を上から押さえる。このとき、給電電極部４０が固定カソード接続電極部３１の固定導電ブロック３２に接触して、直流電流が給電される。また、図６に示したような構成によって、ノズル兼用アノード電極体５は固定アノード接続電極部６、昇降アノード給電電極部７を経由して直流電源の正側に接続されており、被めっき基板１下面の導体部は、カソード交換電極３４、固定導電ブロック３２、給電電極部４０の経路で直流電源の負側に接続される。 First, the substrate 1 to be plated is disposed so as to close the upper opening of the jet plating tank 10, and the substrate 1 to be plated 1 is supported from below by the fixed cathode connection electrode portion 31. At this time, the cathode exchange electrode 34 constituting a part of the fixed cathode connection electrode portion 31 is electrically connected to the conductor portion of the substrate 1 to be plated. Next, the pressing plate 20 is lowered to press the substrate 1 to be plated from above. At this time, the feeding electrode unit 40 comes into contact with the fixed conductive block 32 of the fixed cathode connection electrode unit 31 and a direct current is fed. In addition, with the configuration as shown in FIG. 6, the nozzle / anode electrode body 5 is connected to the positive side of the DC power source via the fixed anode connecting electrode portion 6 and the raising / lowering anode feeding electrode portion 7, and the substrate to be plated The conductor portion on the lower surface of 1 is connected to the negative side of the DC power source through a path of the cathode exchange electrode 34, the fixed conductive block 32, and the feeding electrode portion 40.

この状態でポンプ７０を作動させることにより、めっき液Ｒ１は噴流めっき槽１０の内部に入り分散板１１の噴出孔１１ａ、分散板１２の噴出孔１２ａ、ノズル兼用アノード電極体５のノズル穴５ａを通過して噴流となって被めっき基板１の下面に当たり、ノズル兼用アノード電極体５側からカソード電極体となる被めっき基板１の導体部に電流を流すことで所定の電解めっきが行われる。 By operating the pump 70 in this state, the plating solution R1 enters the jet plating tank 10 and passes through the ejection holes 11a of the dispersion plate 11, the ejection holes 12a of the dispersion plate 12, and the nozzle holes 5a of the nozzle electrode 5 serving as a nozzle. A predetermined electroplating is performed by passing the current from the nozzle / anode electrode body 5 side to the conductor portion of the substrate 1 to be plated, which is a cathode electrode body.

めっき作用に使われためっき液Ｒ２は、噴流めっき槽１０の排出流路１４から溢れて受け槽５０に一時的に溜まる。めっき液Ｒ２の上澄み液は、めっき液戻り管５１を落下して静液槽６０に溜められる。 The plating solution R2 used for the plating action overflows from the discharge channel 14 of the jet plating tank 10 and temporarily accumulates in the receiving tank 50. The supernatant solution of the plating solution R2 falls in the plating solution return pipe 51 and is stored in the still solution tank 60.

この実施の形態によれば、次の通りの効果を得ることができる。 According to this embodiment, the following effects can be obtained.

(1) 被めっき物としての被めっき基板１に１５ｍｍ乃至２５ｍｍの比較的近距離に対向配置されたノズルのノズル穴５ａによるめっき液の高流速の噴射により、多層基板等のビアホール内にめっきを生成する際に、ビアホールの底部まで確実にめっき液を供給することができ、膜厚分布も５％以内に収めることができる（表１参照）。 (1) Plating is performed in a via hole of a multilayer substrate or the like by spraying a plating solution at a high flow rate through a nozzle hole 5a of a nozzle that is opposed to the substrate 1 as a substrate to be plated at a relatively short distance of 15 to 25 mm. When producing, the plating solution can be reliably supplied to the bottom of the via hole, and the film thickness distribution can be kept within 5% (see Table 1).

(2) 前記ノズルをアノード電極材料で製作し、ノズル兼用アノード電極体５として作用させることにより、めっき液中のイオンを損失無く効率的にビアホール底部まで届かせることが可能となる。さらに下記表５のようにアノード電極材料を含リン銅とすることにより、電流密度を上げることができ、柱状電極の成長を早めることが可能となる。 (2) By manufacturing the nozzle with an anode electrode material and acting as the anode electrode body 5 serving also as a nozzle, it becomes possible to efficiently reach ions in the plating solution to the bottom of the via hole without loss. Further, by using phosphorous copper as the anode electrode material as shown in Table 5 below, the current density can be increased and the growth of the columnar electrode can be accelerated.

表５はアノード電極材料を含リン銅とすることで、不溶性アノードに比べて焼け発生の無い高品質の柱状導体形成が可能であることを示す。

Table 5 shows that by using phosphorous copper as the anode electrode material, it is possible to form a high-quality columnar conductor that is less likely to burn than an insoluble anode.

(3) アノード電極体５の基板１側への対向露出面積と、基板１のめっき範囲の面積（アノード電極体側へ対向しかつめっき液が接する対向面積）との比を、１：０．９〜１：１．１の範囲とすれば、膜厚分布の良い均質なめっきを形成できる。（表２参照） (3) The ratio of the exposed area of the anode electrode body 5 facing the substrate 1 to the area of the plating range of the substrate 1 (facing area facing the anode electrode body and contacting the plating solution) is 1: 0.9. If it is in the range of ˜1: 1.1, uniform plating with a good film thickness distribution can be formed. (See Table 2)

(4) めっき液を噴出するノズル兼用アノード電極体５と基板１とで挟まれためっき液室からめっき液を槽外に排出する排出流路１４の狭隘部（出口）断面積の総和と、噴流ノズルのノズル穴５ａの開口面積の総和との比の値を、０．３〜０．９の範囲とすれば、さらに膜厚分布の良化（３％以内に収める）に効果がある（表３参照）。 (4) the sum of the cross-sectional areas of the narrow portion (exit) of the discharge channel 14 for discharging the plating solution out of the tank from the plating solution chamber sandwiched between the nozzle and anode electrode body 5 for ejecting the plating solution and the substrate 1; If the value of the ratio of the total opening area of the nozzle holes 5a of the jet nozzle is in the range of 0.3 to 0.9, the film thickness distribution is further improved (within 3%) ( (See Table 3).

(5) 噴流めっき槽１０が、固定カソード接続電極部３１とアノード電極体５とを取り付けたスパージャ部１０Ａと、スパージャ部１０Ａよりも下側の槽本体部１０Ｂとに分割されていて、スパージャ部１０Ａが交換自在（ひいてはアノード電極体も交換自在）であり、アノード電極体５の侵食による交換作業の簡素化を図ることができ、コスト削減及び製造リードタイムの短縮に寄与可能である。 (5) The jet plating tank 10 is divided into a sparger part 10A to which the fixed cathode connection electrode part 31 and the anode electrode body 5 are attached, and a tank main body part 10B below the sparger part 10A. 10A can be exchanged (and the anode electrode body can be exchanged as well), and the exchange work by erosion of the anode electrode body 5 can be simplified, which can contribute to cost reduction and manufacturing lead time reduction.

(6) めっき液の排出経路においてめっき液中に含まれる気泡を除去する機構（例えば、図４ように排出流路１４の天井Ｔに部分的な円弧加工を施していること等）を設けるようにすれば、めっき液中の気泡を効果的、効率的に消去でき、下記表４のように、気泡付着に起因するめっき不良を除去し、被めっき面全体のめっき均一化を図ることができ、品質向上を図ることが可能である。 (6) Provide a mechanism for removing bubbles contained in the plating solution in the discharge route of the plating solution (for example, a partial arc processing is applied to the ceiling T of the discharge channel 14 as shown in FIG. 4). If this is the case, the bubbles in the plating solution can be effectively and efficiently eliminated, and as shown in Table 4 below, plating defects resulting from the adhesion of bubbles can be removed, and the plating surface can be uniformly plated. It is possible to improve the quality.

表４は気泡除去機構を設けた本実施の形態の場合に、不良発生を皆無とすることができたことを示す。

Table 4 shows that in the case of the present embodiment provided with the bubble removing mechanism, it was possible to eliminate the occurrence of defects.

以上本発明の実施の形態について説明してきたが、本発明はこれに限定されることなく請求項の記載の範囲内において各種の変形、変更が可能なことは当業者には自明であろう。 Although the embodiments of the present invention have been described above, it will be obvious to those skilled in the art that the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the claims.

本発明に係る噴流めっき装置の実施の形態であって、噴流めっき槽及びその周辺構成を示す正断面図である。It is embodiment of the jet plating apparatus which concerns on this invention, Comprising: It is a front sectional view which shows a jet plating tank and its periphery structure. 実施の形態の全体構成を示す説明図である。It is explanatory drawing which shows the whole structure of embodiment. 実施の形態における押さえ板部分の平面図である。It is a top view of the pressing board part in embodiment. 実施の形態において、方形枠状のカソード固定支持部の底面に形成された排出流路の形状を説明するための側断面図である。In embodiment, it is a sectional side view for demonstrating the shape of the discharge flow path formed in the bottom face of a square frame-shaped cathode fixed support part. 実施の形態において、底面に排出流路を多数形成した方形枠状のカソード固定支持部の底面図である。In embodiment, it is a bottom view of the square frame-shaped cathode fixed support part which formed many discharge flow paths in the bottom face. アノード電極体への給電構造の１例を示す部分断面図である。It is a fragmentary sectional view which shows an example of the electric power feeding structure to an anode electrode body.

符号の説明Explanation of symbols

１被めっき基板
５ノズル兼用アノード電極体
１０噴流めっき槽
１０Ａスパージャ部
１０Ｂ槽本体部
１１，１２分散板
１３めっき液供給管
１４排出流路
１５カソード固定支持部
２０押さえ板
２１圧縮ばね
３０カソード接続電極体
３１固定カソード接続電極部
３２固定導電ブロック
３３螺子
３４カソード交換電極
３５，３７弾性体シール
３６絶縁板
４０給電電極部
４５昇降給電部
５０受け槽
５１めっき液戻り管
６０静液槽
６２消泡用仕切り板
７０ポンプ
７５フィルタ
Ｒ１，Ｒ２めっき液
Ｔ天井 DESCRIPTION OF SYMBOLS 1 Substrate to be plated 5 Nozzle combined anode electrode body 10 Jet plating bath 10A Sparger portion 10B Tank body portions 11 and 12 Dispersion plate 13 Plating solution supply pipe 14 Discharge flow passage 15 Cathode fixing support portion 20 Press plate 21 Compression spring 30 Cathode connection electrode Body 31 Fixed cathode connection electrode portion 32 Fixed conductive block 33 Screw 34 Cathode replacement electrode 35, 37 Elastic seal 36 Insulating plate 40 Feed electrode portion 45 Lifting feed portion 50 Receiving tank 51 Plating solution return pipe 60 Still liquid bath 62 For defoaming Partition plate 70 Pump 75 Filter R1, R2 Plating solution T Ceiling

Claims

めっき液の噴流を発生させる噴流めっき槽の開口側に、被めっき基板の導体部を下向きとして配置し、前記導体部にめっき液を噴流させながら前記導体部をカソード電極体として、前記カソード電極体とアノード電極体に電流を付与してめっきする噴流めっき装置であって、
前記アノード電極体は、前記被めっき基板に対向する側がノズル穴を設けた平面であって、めっき液を噴出する噴流ノズルを兼ね、
前記被めっき基板は１００ｍｍ×１００ｍｍ乃至２５０ｍｍ×２５０ｍｍのサイズであって、
前記噴流ノズルと前記被めっき基板とで１５ｍｍ〜２５ｍｍの距離で挟まれためっき液室と、めっき液を前記めっき液室から槽外へ排出する排出流路とを有し、前記排出流路の入口側の断面積が出口側の断面積より広く、
前記めっき液室内の液圧を上昇させるために、前記排出流路の出口側の最も狭い所の断面積の総和と、前記噴流ノズルのノズル穴の開口面積の総和とを比較したとき、前記出口側の最も狭い所の断面積の総和の方が小さく、前記ノズル穴の開口面積の総和に対する、前記出口側の最も狭い所の断面積の総和の比が０．３〜０．９であることを特徴とする噴流めっき装置。 The cathode electrode body is disposed on the opening side of a jet plating tank for generating a jet of plating solution with the conductor portion of the substrate to be plated facing downward, and the conductor portion is used as a cathode electrode body while jetting the plating solution to the conductor portion. A jet plating apparatus for plating by applying current to the anode electrode body,
The anode electrode body is a plane provided with nozzle holes on the side facing the substrate to be plated, and also serves as a jet nozzle that ejects a plating solution,
The substrate to be plated has a size of 100 mm × 100 mm to 250 mm × 250 mm,
A plating solution chamber sandwiched between the jet nozzle and the substrate to be plated at a distance of 15 mm to 25 mm; and a discharge channel for discharging the plating solution from the plating solution chamber to the outside of the tank . The cross-sectional area on the inlet side is wider than the cross-sectional area on the outlet side,
To increase the fluid pressure of the plating liquid chamber, when compared with the sum of the cross-sectional areas of the narrowest at the outlet side of the discharge passage, and a sum of the opening area of the nozzle hole of the jet nozzle, said outlet The sum of the cross-sectional areas of the narrowest part on the side is smaller, and the ratio of the sum of the cross-sectional areas of the narrowest part on the outlet side to the sum of the opening areas of the nozzle holes is 0.3 to 0.9 A jet plating apparatus characterized by.

前記アノード電極体の前記被めっき基板側への対向露出面積と、前記被めっき基板のめっき液に接する対向面積の比が１：０．９〜１：１．１の範囲であることを特徴とする請求項１記載の噴流めっき装置。 Facing the exposed area to the object to be plated substrate side of the anode electrode, the ratio of the opposing area in contact with the plating solution of the plating substrate is 1: 0.9 to 1: and wherein in the range of 1.1 The jet plating apparatus according to claim 1.

前記排出流路を構成する前記被めっき基板側の流路面を前記排出流路の天井としたとき、前記排出流路の入口側の天井の入り口から出口に向かう断面形状は円弧形状であって、前記入口側の天井は出口側に向かって低くなり、前記排出流路の入口部分は円弧の接線が当該排出流路の出口側を構成する天井と略平行であることを特徴とする請求項１記載の噴流めっき装置。 When the surface of the substrate to be plated constituting the discharge flow path is the ceiling of the discharge flow path, the cross-sectional shape from the entrance of the ceiling on the inlet side of the discharge flow path to the outlet is an arc shape, The ceiling on the inlet side becomes lower toward the outlet side, and the inlet portion of the discharge channel has an arc tangent substantially parallel to the ceiling that forms the outlet side of the discharge channel. The jet plating apparatus described.

前記噴流めっき槽は、前記固定カソード接続電極部と前記アノード電極体とを取り付けたスパージャ部と、該スパージャ部よりも下側の槽本体部とに分割されていて、前記アノード電極体が交換自在であることを特徴とする請求項１乃至３のいずれか記載の噴流めっき装置。 The jet plating tank is divided into a sparger part to which the fixed cathode connection electrode part and the anode electrode body are attached, and a tank main body part below the sparger part, and the anode electrode body can be exchanged. The jet plating apparatus according to any one of claims 1 to 3, wherein: