FR3051971B1 - Procede de fabrication d'une structure semi-conductrice comprenant un interposeur - Google Patents
Procede de fabrication d'une structure semi-conductrice comprenant un interposeur Download PDFInfo
- Publication number
- FR3051971B1 FR3051971B1 FR1654831A FR1654831A FR3051971B1 FR 3051971 B1 FR3051971 B1 FR 3051971B1 FR 1654831 A FR1654831 A FR 1654831A FR 1654831 A FR1654831 A FR 1654831A FR 3051971 B1 FR3051971 B1 FR 3051971B1
- Authority
- FR
- France
- Prior art keywords
- temporary support
- semiconductor structure
- interposer
- manufacturing
- structure including
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 150000002372 helium compounds Chemical class 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
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Abstract
L'invention concerne un procédé permettant de former une structure semi-conductrice comprenant l'introduction, dans des conditions choisies, de composés d'hydrogène et d'hélium dans un support temporaire (1) afin de former une zone de faiblesse (2) à une profondeur prédéterminée à l'intérieur de celui-ci , et pour définir une couche superficielle (3) et une partie résiduelle (4) du support temporaire (1) ; la formation d'une couche d'interconnexion (5) sur le support temporaire (1) ; la mise en place d'au moins une puce à semi-conducteur (6) sur la couche d'interconnexion (5) et la fourniture d'énergie au support temporaire (1) pour détacher la partie résiduelle (4) et fournir la structure semiconductrice .
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1654831A FR3051971B1 (fr) | 2016-05-30 | 2016-05-30 | Procede de fabrication d'une structure semi-conductrice comprenant un interposeur |
SG10201913072VA SG10201913072VA (en) | 2016-05-30 | 2017-05-24 | Method for fabrication of a semiconductor structure including an interposer free from any through via |
KR1020187034604A KR102397140B1 (ko) | 2016-05-30 | 2017-05-24 | 임의의 관통 비아가 없는 인터포저를 포함하는 반도체 구조의 제조 방법 |
US16/305,695 US11114314B2 (en) | 2016-05-30 | 2017-05-24 | Method for fabrication of a semiconductor structure including an interposer free from any through via |
CN201780032360.1A CN109196627B (zh) | 2016-05-30 | 2017-05-24 | 包含无任何贯通孔的内插层的半导体结构的制造方法 |
DE112017002718.7T DE112017002718T5 (de) | 2016-05-30 | 2017-05-24 | Verfahren zur Herstellung einer Halbleiterstruktur mit einer Zwischenlage, die keine Kontaktdurchführung aufweist |
PCT/EP2017/062556 WO2017207390A1 (fr) | 2016-05-30 | 2017-05-24 | Procédé de fabrication d'une structure semi-conductrice comprenant un interposeur ne comportant aucun trou d'interconnexion |
SG11201810104VA SG11201810104VA (en) | 2016-05-30 | 2017-05-24 | Method for fabrication of a semiconductor structure including an interposer free from any through via |
TW106117418A TWI712106B (zh) | 2016-05-30 | 2017-05-25 | 用於製作包含中介層之半導體結構之方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1654831A FR3051971B1 (fr) | 2016-05-30 | 2016-05-30 | Procede de fabrication d'une structure semi-conductrice comprenant un interposeur |
FR1654831 | 2016-05-30 |
Publications (2)
Publication Number | Publication Date |
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FR3051971A1 FR3051971A1 (fr) | 2017-12-01 |
FR3051971B1 true FR3051971B1 (fr) | 2019-12-13 |
Family
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Application Number | Title | Priority Date | Filing Date |
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FR1654831A Active FR3051971B1 (fr) | 2016-05-30 | 2016-05-30 | Procede de fabrication d'une structure semi-conductrice comprenant un interposeur |
Country Status (8)
Country | Link |
---|---|
US (1) | US11114314B2 (fr) |
KR (1) | KR102397140B1 (fr) |
CN (1) | CN109196627B (fr) |
DE (1) | DE112017002718T5 (fr) |
FR (1) | FR3051971B1 (fr) |
SG (2) | SG11201810104VA (fr) |
TW (1) | TWI712106B (fr) |
WO (1) | WO2017207390A1 (fr) |
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TW202038266A (zh) * | 2018-11-26 | 2020-10-16 | 瑞典商斯莫勒科技公司 | 具有離散的能量儲存構件之半導體組件 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
KR100484962B1 (ko) * | 1996-07-12 | 2005-04-25 | 후지쯔 가부시끼가이샤 | 반도체 장치의 제조 방법 및 반도체 장치 |
JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
JP2001102523A (ja) * | 1999-09-28 | 2001-04-13 | Sony Corp | 薄膜デバイスおよびその製造方法 |
FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
US6794273B2 (en) * | 2002-05-24 | 2004-09-21 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
JP4651924B2 (ja) * | 2003-09-18 | 2011-03-16 | シャープ株式会社 | 薄膜半導体装置および薄膜半導体装置の製造方法 |
FR2898430B1 (fr) * | 2006-03-13 | 2008-06-06 | Soitec Silicon On Insulator | Procede de realisation d'une structure comprenant au moins une couche mince en materiau amorphe obtenue par epitaxie sur un substrat support et structure obtenue suivant ledit procede |
FR2928031B1 (fr) * | 2008-02-25 | 2010-06-11 | Soitec Silicon On Insulator | Procede de transfert d'une couche mince sur un substrat support. |
US20100109169A1 (en) * | 2008-04-29 | 2010-05-06 | United Test And Assembly Center Ltd | Semiconductor package and method of making the same |
FR2936357B1 (fr) * | 2008-09-24 | 2010-12-10 | Commissariat Energie Atomique | Procede de report de puces sur un substrat. |
US8970045B2 (en) | 2011-03-31 | 2015-03-03 | Soitec | Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices |
US8728863B2 (en) * | 2011-08-09 | 2014-05-20 | Soitec | Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods |
DE112011105990T5 (de) | 2011-12-22 | 2014-09-11 | Intel Corporation | Integriertes 3D-Schaltungspaket mit Fensterinterposer |
US8685761B2 (en) * | 2012-02-02 | 2014-04-01 | Harris Corporation | Method for making a redistributed electronic device using a transferrable redistribution layer |
TWI517274B (zh) | 2012-03-21 | 2016-01-11 | 矽品精密工業股份有限公司 | 晶圓級半導體封裝件之製法及其晶圓級封裝基板之製法 |
US8963285B2 (en) * | 2013-03-08 | 2015-02-24 | Infineon Technologies Ag | Semiconductor device and method of manufacturing thereof |
US20140339706A1 (en) * | 2013-05-17 | 2014-11-20 | Nvidia Corporation | Integrated circuit package with an interposer formed from a reusable carrier substrate |
US9209142B1 (en) * | 2014-09-05 | 2015-12-08 | Skorpios Technologies, Inc. | Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal |
-
2016
- 2016-05-30 FR FR1654831A patent/FR3051971B1/fr active Active
-
2017
- 2017-05-24 CN CN201780032360.1A patent/CN109196627B/zh active Active
- 2017-05-24 US US16/305,695 patent/US11114314B2/en active Active
- 2017-05-24 DE DE112017002718.7T patent/DE112017002718T5/de active Pending
- 2017-05-24 SG SG11201810104VA patent/SG11201810104VA/en unknown
- 2017-05-24 WO PCT/EP2017/062556 patent/WO2017207390A1/fr active Application Filing
- 2017-05-24 SG SG10201913072VA patent/SG10201913072VA/en unknown
- 2017-05-24 KR KR1020187034604A patent/KR102397140B1/ko active IP Right Grant
- 2017-05-25 TW TW106117418A patent/TWI712106B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN109196627B (zh) | 2023-08-08 |
SG11201810104VA (en) | 2018-12-28 |
KR102397140B1 (ko) | 2022-05-16 |
KR20190015707A (ko) | 2019-02-14 |
TWI712106B (zh) | 2020-12-01 |
SG10201913072VA (en) | 2020-03-30 |
TW201742189A (zh) | 2017-12-01 |
FR3051971A1 (fr) | 2017-12-01 |
WO2017207390A1 (fr) | 2017-12-07 |
US20200328094A1 (en) | 2020-10-15 |
US11114314B2 (en) | 2021-09-07 |
CN109196627A (zh) | 2019-01-11 |
DE112017002718T5 (de) | 2019-02-28 |
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