JP4646715B2 - ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ - Google Patents
ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ Download PDFInfo
- Publication number
- JP4646715B2 JP4646715B2 JP2005201120A JP2005201120A JP4646715B2 JP 4646715 B2 JP4646715 B2 JP 4646715B2 JP 2005201120 A JP2005201120 A JP 2005201120A JP 2005201120 A JP2005201120 A JP 2005201120A JP 4646715 B2 JP4646715 B2 JP 4646715B2
- Authority
- JP
- Japan
- Prior art keywords
- chuck top
- wafer
- support
- preferable
- pedestal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001816 cooling Methods 0.000 claims description 117
- 238000010438 heat treatment Methods 0.000 claims description 90
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 71
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 35
- 239000002131 composite material Substances 0.000 claims description 25
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 13
- 229910052863 mullite Inorganic materials 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 91
- 229910052751 metal Inorganic materials 0.000 description 63
- 239000002184 metal Substances 0.000 description 63
- 238000000034 method Methods 0.000 description 49
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 40
- 239000000463 material Substances 0.000 description 40
- 239000004020 conductor Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 28
- 239000011888 foil Substances 0.000 description 27
- 239000000523 sample Substances 0.000 description 25
- 239000010935 stainless steel Substances 0.000 description 24
- 229910001220 stainless steel Inorganic materials 0.000 description 24
- 229910052759 nickel Inorganic materials 0.000 description 20
- 239000011347 resin Substances 0.000 description 19
- 229920005989 resin Polymers 0.000 description 19
- 239000010949 copper Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 18
- 238000007747 plating Methods 0.000 description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 238000009413 insulation Methods 0.000 description 17
- 230000003746 surface roughness Effects 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 239000002826 coolant Substances 0.000 description 14
- 239000012212 insulator Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000002585 base Substances 0.000 description 10
- 239000010445 mica Substances 0.000 description 10
- 229910052618 mica group Inorganic materials 0.000 description 10
- 238000007751 thermal spraying Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000005219 brazing Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000010297 mechanical methods and process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000013585 weight reducing agent Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052878 cordierite Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
2 チャックトップ
3 チャックトップ導体層
4 支持体
5 台座
6 空隙
7 加熱体
8 支持棒
9 冷却モジュール
10 昇降手段
11 チャックトップ変形防止用基板
21 環状溝
22 放射状溝
23 柱状部材
41 支持体円筒部
42 貫通孔
71 抵抗発熱体
72 絶縁体
Claims (5)
- 表面にチャックトップ導体層を有するチャックトップと、該チャックトップを支持する支持体と、該支持体を載置する台座とからなり、支持体と台座との間の少なくとも一部に空隙を有し、前記台座が有底円筒形状であり、その材質がムライトもしくはアルミナ、ムライトとアルミナの複合体のいずれかからなることを特徴とするウェハプローバ用ウェハ保持体。
- 前記チャックトップおよび/または支持体に、発熱体を備えることを特徴とする請求項1に記載のウェハプローバ用ウェハ保持体。
- 前記支持体の形状が、有底円筒形状であることを特徴とする請求項1または2に記載のウェハプローバ用ウェハ保持体。
- 前記空隙内に、冷却モジュールを備えることを特徴とする請求項1乃至3のいずれかに記載のウェハプローバ用ウェハ保持体。
- 請求項1乃至4のいずれかに記載したウェハプローバ用ウェハ保持体を備えたことを特徴とするウェハプローバ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005201120A JP4646715B2 (ja) | 2005-07-11 | 2005-07-11 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005201120A JP4646715B2 (ja) | 2005-07-11 | 2005-07-11 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007019359A JP2007019359A (ja) | 2007-01-25 |
JP4646715B2 true JP4646715B2 (ja) | 2011-03-09 |
Family
ID=37756227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005201120A Active JP4646715B2 (ja) | 2005-07-11 | 2005-07-11 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4646715B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010186765A (ja) * | 2009-02-10 | 2010-08-26 | Sumitomo Electric Ind Ltd | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ |
JP5500421B2 (ja) * | 2009-12-14 | 2014-05-21 | 住友電気工業株式会社 | ウェハ保持体およびそれを搭載したウェハプローバ |
JP2012191241A (ja) * | 2012-06-27 | 2012-10-04 | Sumitomo Electric Ind Ltd | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ |
JP5978992B2 (ja) * | 2012-12-28 | 2016-08-24 | 株式会社ソシオネクスト | 電子デバイス用試験装置及び試験方法 |
JP6060889B2 (ja) * | 2013-12-16 | 2017-01-18 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
JP6786439B2 (ja) * | 2016-06-28 | 2020-11-18 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
-
2005
- 2005-07-11 JP JP2005201120A patent/JP4646715B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2007019359A (ja) | 2007-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3945527B2 (ja) | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ | |
JP4049172B2 (ja) | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ | |
JP2007035747A (ja) | ウェハ保持体およびそれを搭載したウェハプローバ | |
JP2007043042A (ja) | ウェハ保持体およびその製造方法、ならびにそれを搭載したウェハプローバ及び半導体加熱装置 | |
JP2007035899A (ja) | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ | |
JP4063291B2 (ja) | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ | |
JP2007042911A (ja) | ウェハ保持体およびそれを搭載したウェハプローバ | |
JP4462140B2 (ja) | ウエハプローバ用チャックトップ、ウエハ保持体、及びそれらを備えたウエハプローバ | |
JP4646715B2 (ja) | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ | |
US7495460B2 (en) | Body for keeping a wafer, heater unit and wafer prober | |
JP5067050B2 (ja) | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ | |
JP2007042960A (ja) | ウェハ保持体およびそれを搭載したウェハプローバ | |
JP4155288B2 (ja) | ウェハ保持体およびそれを搭載したウェハプローバ | |
JP2007042909A (ja) | ウェハ保持体およびそれを搭載したウェハプローバ | |
JP2007035737A (ja) | ウェハ保持体及びウェハ保持体を備えたウェハプローバ | |
JP2007235171A (ja) | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ | |
JP2010186765A (ja) | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ | |
JP5500421B2 (ja) | ウェハ保持体およびそれを搭載したウェハプローバ | |
JP4356661B2 (ja) | ウェハ保持体およびそれを搭載したウェハプローバ | |
JP2007042908A (ja) | ウェハ保持体およびそれを搭載したウェハプローバ | |
JP2007208186A (ja) | ウエハ保持体、それを搭載した半導体製造装置及びウエハプローバ | |
JP4462143B2 (ja) | ウェハ保持体及びウェハ保持体を備えたウェハプローバ | |
JP2007035999A (ja) | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ | |
JP5125272B2 (ja) | ウエハプローバ用ウエハ保持体及びウエハプローバ | |
JP2006303339A (ja) | 被処理物保持体およびそれを搭載したウェハプローバ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080612 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080701 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101008 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101207 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131217 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4646715 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |