JP4645276B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4645276B2 JP4645276B2 JP2005114055A JP2005114055A JP4645276B2 JP 4645276 B2 JP4645276 B2 JP 4645276B2 JP 2005114055 A JP2005114055 A JP 2005114055A JP 2005114055 A JP2005114055 A JP 2005114055A JP 4645276 B2 JP4645276 B2 JP 4645276B2
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Description
このため、図14のように、良伝導性のリードフレーム61を半導体基板51上面電極に固着させ、導通と放熱の双方の機能を付加する試みがなされている(例えば、特許文献1参照)。この構成は、半導体基板1の表面を冷却できる他、複数のアルミワイヤを接合する工程を単一の部材をチップに接合する工程に集約できる利点がある。
しかし、従来のリードフレーム構造を有する半導体装置では、放熱性を損なうことなく、長期に渡る使用環境温度の変化(熱サイクル)に対するリードフレーム61と半導体基板51の接続信頼性を確保することが難しいという問題があった。それは、半導体基板1とリードフレーム61の熱膨張係数に大きな差があり、そのため、熱サイクルの度に半導体基板51とリードフレーム61の接合層に熱応力が加わり、接合層は破壊されてしまうためである。
また、熱応力を緩和する方法として、半導体基板上に応力緩和層を設けてこの応力緩和層とリードフレームを半田接合するとが開示されている(特許文献3など)。
また、電子部品を導電パターン付き絶縁基板(配線基板)に半田付けする場合に、電子部品に応力緩和機構体を設けて熱応力を吸収する方法が開示されている(特許文献4など)。
この発明の目的は、前記の課題を解決して、放熱効率が高く、熱応力による接続不良や損傷の発生が防止できて高い接続信頼性が確保できる半導体装置を提供することにある。
また、前記非拘束領域は、前記拘束領域の表面より離れているとよい。
また、前記半導体基板と前記接続体との固着は導電性接着剤にて行うとよい。
また、前記複数の拘束領域からなる部分を前記半導体基板と前記接続体との接合領域とし、該接合領域の中心部から該接合領域の外周部に向かって複数の拘束領域が配置されるとともに、前記拘束領域の面積が前記中心部から前記外周部に向かって小さくなる構成とするとよい。
また、前記非拘束領域に前記導電性接着剤と接合しない非接合部材を設けるとよい。
また、前記導電性接着剤は半田であるとよい。
また、前記非接合部材は前記半田が濡れないソルダレジスト領域であるとよい。
また、前記拘束領域の形状を開口部として有する位置決め枠を前記拘束領域に嵌め込むとよい。
また、前記非拘束領域の一部に支持基板の導体パターンを接合するとよい。
図1において、半導体基板1上に良伝導性のアルミニウム、銅などを200μm程度にの圧延した材料を打ち抜き加工し、それに曲げ加工を施した接続体3を半田2で固着する。図1(b)の断面図に示すように、接続体3の断面は波状(矩形波状)となっており、凹部の底部とそれに連続する側面の一部が半田2で固着され拘束領域4となる。凸部の上面とそれに連続する側面であって、半田が固着されない部分が非拘束領域5となる。接続体3の凹部の底面と半導体基板1との間には半田2が介在し、半導体基板上に接続体3が当接することはない。
図2において、接続体3を半導体基板1上に半田2で固着した後、絶縁基板46(支持基板)に形成した導電パターン44に半導体基板1の裏面を固着し、接続体3の非拘束領域の一部をリードフレーム43(外部導出導体)に形成した導電パターン41に固着し、リードフレーム43の他端を絶縁基板46に形成した導電パターン45に固着する。絶縁基板46の裏面に形成した導電パターン47を半田48を介して銅ベース49(冷却体と支持補強基板の働きをする)に固着し、銅ベース49をヒートシンク50に固着する。絶縁基板46と銅ベース49の代わりに、アルミニウム板の上に絶縁膜を被覆しこの絶縁膜の上に導電パターンを形成したアルミ基板を用いても構わない。
良伝導性のアルミニウム、銅などの圧延された非鉄材料を打ち抜き加工し、格子状の導板6を形成する(同図(a))。
次に、格子状の交差箇所を拘束領域4となるように窪むように曲げ加工を施こし(同図(b))、導板の箇所でa、b、c、dを側壁とし、その先のe、f、g、hを直角に曲げて水平にして非拘束領域5として接続体3を形成する(同図(c)、(d))。
半導体基板1上にこのような接続体3の拘束領域4を半田2で固着することで、半田2に固着する拘束領域4が分散され、半田2が付かない上部の非拘束領域5がばね効果の働きをして、半導体基板1と接続体3の間の線膨張係数差で生じた熱応力ではんだ2にせん断ひずみが集中することを低減することができる。その結果、接続信頼性を向上させることができる。
図15は、図4に示した接続体の変形例の部分斜視図である。半導体基板1や半田2の図示は省略している。非拘束領域5の幅に比べ、拘束領域4の幅(面積)が大きい格子状の接続体である。格子状に配置された複数の拘束領域4と、拘束領域4の上方(非接合面方向)へ屈曲した非接合領域5とが連設されている。非拘束領域5が上方へ屈曲していることにより、拘束領域4を導電性接着剤で半導体基板へ固着させたときに導電性接着剤から離れているため、非拘束領域のばね効果を有効に機能させることができる。尚、非拘束領域5を図1の如く拘束領域に対して鉛直に屈曲させて断面を矩形波状に形成してもよいし、図15の如く、斜め上方へ略波状に屈曲させてもよい。
しかし、前記の接続体3において、非拘束領域5に半田2が固着すると、非拘束領域5が拘束されてしまい、接続体3のばね機能が損なわれる。それを解決する方法をつぎの実施例で説明する。
また、図7のように、非拘束領域5下をポリイミド樹脂8などのリフロー耐熱性のあるもので型注入して先に硬化させて、非拘束領域5に半田2が固着しないようにして所望の機能を実現することができる。図7のように、エポキシ樹脂8で非拘束領域5を包囲してしまっても、エポキシ樹脂8自体の剛性は金属である接続体3に比較して十分低いのでばね機能は確保される。
半田2の代わりに樹脂系の導電性接着剤を用いた場合は、この樹脂系の導電接着剤と非接着の材質のものを樹脂塗布部7に相当する箇所に設けるとよい。
接続体3の凹凸の形状が崩れないように同図(c)のように、拘束領域4の形状の開口部10を有する位置決め枠9を形成し、位置決め枠9の開口部10に接続体3の拘束領域4を嵌め込み、この位置決め枠9を嵌め込んだ接続体3を半導体基板1上に半田2で固着する。位置決め枠9を用いることにより、厚さ200μmと薄い素材を複雑な形状に折って形成した接続体3の形状を損なうことなく接合することができる。また、位置決め枠9を半田に濡れない材質(例えば、エポキシなど)で形成しておけば、半田2の非拘束領域5へのはい上がりを抑制することもできる。あるいは、位置決め枠9を熱膨張係数の小さな材質(例えば、セタミックなど)で形成するようにしてよい。
この実施例では、半導体基板1の裏面を接続体13を介して半田12接合するため、半導体基板1との線膨張係数差が大きい熱伝導性の良好な材質の絶縁基板21を用いることができる。尚、接続体13と導電パターン22の固着は常温直接接合(圧着接合)や溶接接合(スポット溶接)などで温度を上昇させないで固着するとよい。
2、12、48 半田
3、13 接続体
4、4a、4b、4c、14 拘束領域
5、15 非拘束領域
7 樹脂塗布部
8、18 エポキシ樹脂
9 位置決め枠
10 開口部
21、31 絶縁基板
22、24、32、41、44、45、47 導電パターン
23 樹脂膜
25 導体
26 リード導体
42、33 樹脂膜
43 リードフレーム
46 絶縁基板
49 銅ベース
50 ヒートシンク
Claims (11)
- 半導体基板と、該半導体基板に接合する接続体と、を有する半導体装置において、前記接続体は、前記半導体基板に固着される複数の拘束領域と、該拘束領域間を連接するとともに固着されない複数の非拘束領域とを有し、前記拘束領域は、格子状もしくは放射状に配置され、さらに、
前記接続体は、断面形状が略波状となる部分を有し、略波状となる部分のうち、前記半導体基板側に凹んだ凹部を前記拘束領域とし、前記半導体基板とは反対側に膨らんだ凸部を前記非拘束領域とすることを特徴とする半導体装置。 - 前記非拘束領域は、前記拘束領域の表面より離れていることを特徴とする請求項1に記載の半導体装置。
- 前記半導体基板と前記接続体との固着は導電性接着剤にて行うことを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記複数の拘束領域からなる部分を前記半導体基板と前記接続体との接合領域とし、該接合領域の中心部から該接合領域の外周部に向かって複数の拘束領域が配置されるとともに、前記拘束領域の面積が前記中心部から前記外周部に向かって小さくなることを特徴とする請求項1〜請求項3のいずれか一項に記載の半導体装置。
- 前記複数の拘束領域からなる部分を前記半導体基板と前記接続体との接合領域とし、前記半導体基板と前記接続体との接合領域の中心部から該接合領域の外周部に向かって複数の拘束領域が配置されるとともに、前記拘束領域と前記半導体基板との距離が前記中心部から前記外周部に向かって大きくなることを特徴とする請求項1〜請求項4のいずれか一項に記載の半導体装置。
- 前記非拘束領域に前記導電性接着剤と接合しない非接合部材を設けたことを特徴とする請求項1〜請求項5のいずれか一項に記載の半導体装置。
- 前記導電性接着剤は半田であることを特徴とする請求項1〜請求項6のいずれか一項に記載の半導体装置。
- 前記非接合部材は前記半田が濡れないソルダレジスト領域であることを特徴とする請求項7に記載の半導体装置。
- 前記拘束領域の形状を開口部として有する位置決め枠を前記拘束領域に嵌め込むことを特徴とする請求項1〜請求項8のいずれか一項に記載の半導体装置。
- 前記非拘束領域の一部に支持基板の導体パターンを接合したことを特徴とする請求項1〜請求項9のいずれか一項に記載の半導体装置。
- 前記非拘束領域の一部に外部導出用の導体を接合したことを特徴とする請求項1〜請求項9のいずれか一項に記載の半導体装置。
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JP5473733B2 (ja) * | 2010-04-02 | 2014-04-16 | 株式会社日立製作所 | パワー半導体モジュール |
JP5830958B2 (ja) * | 2011-06-23 | 2015-12-09 | 日産自動車株式会社 | 半導体モジュール |
JP6133238B2 (ja) * | 2014-06-09 | 2017-05-24 | 三菱電機株式会社 | 半導体装置 |
JP6256309B2 (ja) * | 2014-11-11 | 2018-01-10 | 三菱電機株式会社 | 電力用半導体装置 |
DE102019111964A1 (de) * | 2019-05-08 | 2020-11-12 | Danfoss Silicon Power Gmbh | Halbleitermodul mit einem ersten Substrat, einem zweiten Substrat und einen Abstandhalter, der die Substrate voneinander trennt |
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JPS447543Y1 (ja) * | 1966-04-04 | 1969-03-22 | ||
JPS63100847U (ja) * | 1986-12-19 | 1988-06-30 | ||
JP2000349207A (ja) * | 1999-06-02 | 2000-12-15 | Denso Corp | 半導体装置の実装構造及び実装方法 |
JP2004047800A (ja) * | 2002-07-12 | 2004-02-12 | Toyota Industries Corp | 接続部材及び接続構造 |
JP2004336043A (ja) * | 2003-05-02 | 2004-11-25 | Orthodyne Electronics Corp | リボンボンディング |
JP2006190728A (ja) * | 2005-01-04 | 2006-07-20 | Mitsubishi Electric Corp | 電力用半導体装置 |
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JPS447543Y1 (ja) * | 1966-04-04 | 1969-03-22 | ||
JPS63100847U (ja) * | 1986-12-19 | 1988-06-30 | ||
JP2000349207A (ja) * | 1999-06-02 | 2000-12-15 | Denso Corp | 半導体装置の実装構造及び実装方法 |
JP2004047800A (ja) * | 2002-07-12 | 2004-02-12 | Toyota Industries Corp | 接続部材及び接続構造 |
JP2004336043A (ja) * | 2003-05-02 | 2004-11-25 | Orthodyne Electronics Corp | リボンボンディング |
JP2006190728A (ja) * | 2005-01-04 | 2006-07-20 | Mitsubishi Electric Corp | 電力用半導体装置 |
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