JP4610323B2 - リセスチャネル領域を備えた半導体素子の製造方法 - Google Patents
リセスチャネル領域を備えた半導体素子の製造方法 Download PDFInfo
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- JP4610323B2 JP4610323B2 JP2004368145A JP2004368145A JP4610323B2 JP 4610323 B2 JP4610323 B2 JP 4610323B2 JP 2004368145 A JP2004368145 A JP 2004368145A JP 2004368145 A JP2004368145 A JP 2004368145A JP 4610323 B2 JP4610323 B2 JP 4610323B2
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 29
- 238000002955 isolation Methods 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 19
- 238000001039 wet etching Methods 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- E—FIXED CONSTRUCTIONS
- E03—WATER SUPPLY; SEWERAGE
- E03C—DOMESTIC PLUMBING INSTALLATIONS FOR FRESH WATER OR WASTE WATER; SINKS
- E03C1/00—Domestic plumbing installations for fresh water or waste water; Sinks
- E03C1/12—Plumbing installations for waste water; Basins or fountains connected thereto; Sinks
- E03C1/22—Outlet devices mounted in basins, baths, or sinks
- E03C1/23—Outlet devices mounted in basins, baths, or sinks with mechanical closure mechanisms
- E03C1/2302—Outlet devices mounted in basins, baths, or sinks with mechanical closure mechanisms the actuation force being transmitted to the plug via rigid elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
- H01L21/823425—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Public Health (AREA)
- Water Supply & Treatment (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
Description
12、22 素子分離膜
23 ハードマスク窒化膜
13、24 ハードマスク酸化膜
14、25 ハードマスクポリシリコン膜
15、26 マスク
16、27 トレンチ
17、28 ゲート酸化膜
18、29 ゲート電極
18A 残膜
19、30 ソース/ドレイン領域
Claims (5)
- 半導体基板に酸化物からなる素子分離膜を形成する工程と、
前記半導体基板の上にリセスチャネル予定領域を露出させながら、前記半導体基板の上に接するように形成されたハードマスク窒化膜、ハードマスク酸化膜、及びハードマスクポリシリコン膜の順に積層された3重構造のハードマスクパターン、及び、前記ハードマスクパターン上に形成された感光膜からなるマスクを形成する工程と、
前記ハードマスクパターンをエッチングバリアとして、前記半導体基板のリセスチャネル予定領域をエッチングすることにより、トレンチを形成すると同時に、前記感光膜からなるマスク及び前記ハードマスクポリシリコン膜を全て除去する工程と、
前記ハードマスク窒化膜をエッチング停止膜として、前記ハードマスク酸化膜を選択的に除去する工程と、
前記ハードマスク窒化膜を前記素子分離膜に対して選択的に除去する工程と、
前記トレンチに一部が埋め込まれているゲート電極を形成する工程と、を含むことを特徴とするリセスチャネル領域を備えた半導体素子の製造方法。 - 前記ハードマスク酸化膜を、ウェットエッチングにより除去することを特徴とする請求項1に記載のリセスチャネル領域を備えた半導体素子の製造方法。
- 前記ハードマスク窒化膜を、ウェットエッチングまたはドライエッチングにより除去することを特徴とする請求項1に記載のリセスチャネル領域を備えた半導体素子の製造方法。
- 前記ハードマスク窒化膜を、約50Å〜200Åの厚さに形成することを特徴とする請求項1に記載のリセスチャネル領域を備えた半導体素子の製造方法。
- 前記ハードマスク酸化膜を、約50Å〜200Åの厚さに形成することを特徴とする請求項1に記載のリセスチャネル領域を備えた半導体素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040031938A KR100615593B1 (ko) | 2004-05-06 | 2004-05-06 | 리세스채널을 구비한 반도체소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005322880A JP2005322880A (ja) | 2005-11-17 |
JP4610323B2 true JP4610323B2 (ja) | 2011-01-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004368145A Expired - Fee Related JP4610323B2 (ja) | 2004-05-06 | 2004-12-20 | リセスチャネル領域を備えた半導体素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7232727B2 (ja) |
JP (1) | JP4610323B2 (ja) |
KR (1) | KR100615593B1 (ja) |
CN (1) | CN1316588C (ja) |
TW (1) | TWI261877B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100518606B1 (ko) * | 2003-12-19 | 2005-10-04 | 삼성전자주식회사 | 실리콘 기판과 식각 선택비가 큰 마스크층을 이용한리세스 채널 어레이 트랜지스터의 제조 방법 |
KR100641365B1 (ko) * | 2005-09-12 | 2006-11-01 | 삼성전자주식회사 | 최적화된 채널 면 방위를 갖는 모스 트랜지스터들, 이를구비하는 반도체 소자들 및 그 제조방법들 |
KR100536042B1 (ko) * | 2004-06-11 | 2005-12-12 | 삼성전자주식회사 | 반도체 장치에서 리세스 게이트 전극 형성 방법 |
KR100702302B1 (ko) | 2006-03-24 | 2007-03-30 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
JP4600834B2 (ja) * | 2006-07-13 | 2010-12-22 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
KR100799133B1 (ko) * | 2006-08-21 | 2008-01-29 | 주식회사 하이닉스반도체 | 반도체소자의 리세스게이트 제조 방법 |
KR100811373B1 (ko) * | 2006-09-08 | 2008-03-07 | 주식회사 하이닉스반도체 | 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법 |
KR100824995B1 (ko) * | 2006-12-27 | 2008-04-24 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
KR100843855B1 (ko) * | 2007-01-18 | 2008-07-03 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조 방법 |
KR100873018B1 (ko) * | 2007-08-31 | 2008-12-10 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조방법 |
KR101004482B1 (ko) * | 2008-05-27 | 2010-12-31 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
JP2010141107A (ja) | 2008-12-11 | 2010-06-24 | Elpida Memory Inc | 半導体装置及びその製造方法 |
CN102054743B (zh) * | 2009-10-30 | 2013-05-01 | 中芯国际集成电路制造(上海)有限公司 | 制作半导体器件中的接触孔的方法 |
KR101858622B1 (ko) * | 2011-07-01 | 2018-06-28 | 삼성전자주식회사 | 반도체 소자 |
CN117438372B (zh) * | 2023-12-21 | 2024-04-19 | 粤芯半导体技术股份有限公司 | 一种耐压深沟槽隔离方法、装置、电子设备及存储介质 |
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JPH0294477A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体装置及びその製造方法 |
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2004
- 2004-05-06 KR KR1020040031938A patent/KR100615593B1/ko not_active IP Right Cessation
- 2004-12-20 JP JP2004368145A patent/JP4610323B2/ja not_active Expired - Fee Related
- 2004-12-20 TW TW093139636A patent/TWI261877B/zh not_active IP Right Cessation
- 2004-12-22 US US11/030,438 patent/US7232727B2/en not_active Expired - Fee Related
- 2004-12-30 CN CNB2004101041664A patent/CN1316588C/zh not_active Expired - Fee Related
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JPH0294477A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH07106557A (ja) * | 1993-10-04 | 1995-04-21 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPH07245291A (ja) * | 1994-03-03 | 1995-09-19 | Sony Corp | シリコン系基板のエッチング方法及びエッチング装置 |
JPH09321285A (ja) * | 1996-05-28 | 1997-12-12 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
KR20050106878A (ko) | 2005-11-11 |
CN1316588C (zh) | 2007-05-16 |
KR100615593B1 (ko) | 2006-08-25 |
JP2005322880A (ja) | 2005-11-17 |
TWI261877B (en) | 2006-09-11 |
TW200537609A (en) | 2005-11-16 |
CN1694237A (zh) | 2005-11-09 |
US7232727B2 (en) | 2007-06-19 |
US20050250284A1 (en) | 2005-11-10 |
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