JP4568286B2 - 縦型電界効果トランジスタおよびその製造方法 - Google Patents
縦型電界効果トランジスタおよびその製造方法 Download PDFInfo
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- JP4568286B2 JP4568286B2 JP2006539239A JP2006539239A JP4568286B2 JP 4568286 B2 JP4568286 B2 JP 4568286B2 JP 2006539239 A JP2006539239 A JP 2006539239A JP 2006539239 A JP2006539239 A JP 2006539239A JP 4568286 B2 JP4568286 B2 JP 4568286B2
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- 238000002353 field-effect transistor method Methods 0.000 title 1
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- 230000005669 field effect Effects 0.000 claims description 51
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- 239000000758 substrate Substances 0.000 claims description 45
- 239000004020 conductor Substances 0.000 claims description 44
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000003054 catalyst Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 13
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
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- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000010419 fine particle Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
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- 239000012212 insulator Substances 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
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- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- 229910000078 germane Inorganic materials 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
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- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
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- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H01L29/0669—Nanowires or nanotubes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
Description
図6(a)および(b)を参照しながら、本発明による縦型電界効果トランジスタの第1の実施形態を説明する。図6(a)は、実施形態の縦型電界効果トランジスタの構成を模式的に示す上面図(上部電極7の記載を省略している)であり、図6(b)は、そのB−B'線断面図である。
以下、図8〜図10を参照しながら、本実施形態のTFTを製造する方法の好ましい実施形態を説明する。
以下、図13から図15を参照しながら、本発明による縦型電界効果トランジスタの第2の実施形態を説明する。
次に、図16を参照しながら、本発明による縦型電界効果トランジスタの第3の実施形態を説明する。
次に、図18を参照しながら、本発明による縦型電界効果トランジスタの第4の実施形態を説明する。
2 酸化シリコン膜
3 透明導電膜
4 下部電極
4' 第1導電体膜
5 ゲート電極
6 ゲート絶縁膜
7 上部電極
7' 第2導電体膜
7a 上部電極7のオーバーハング部分
7b 上部電極7のオーバーハング部分
8 活性領域
8' ナノワイヤ
9 誘電体部
9' 絶縁膜
13 n型チャネル領域
14 p型チャネル領域
15 レジストパターン
100 縦型電界効果トランジスタ
110 活性領域
120 下部電極
130 上部電極
140 誘電体部
130a オーバーハング部分
130b オーバーハング部分
150 ゲート電極
160 縦型電界効果トランジスタ
Claims (23)
- 荷電粒子を走行させるチャネル領域として機能する複数の線状構造物の束を有する活性領域と、
前記活性領域の下端に接続され、ソース領域およびドレイン領域の一方として機能する下部電極と、
前記活性領域の上端に接続され、前記ソース領域およびドレイン領域の他方として機能する上部電極と、
前記活性領域に含まれる線状構造物の束の少なくとも一部における導電性を制御するゲート電極と、
前記活性領域と前記ゲート電極との間に配置され、前記ゲート電極を前記線状構造物の束から電気的に絶縁するゲート絶縁膜と、
を備えた縦型電界効果トランジスタであって、
前記上部電極と前記下部電極との間に配置され、前記上部電極の側面に対して内側に外周側面を有した誘電体部を更に備え、
前記上部電極は、前記誘電体部を介して、前記下部電極の上に位置し、しかも、前記誘
電体部の上面から横方向に突出し、前記誘電体部とは離間したオーバーハング部分を有しており、
前記活性領域は前記誘電体部の外周側面の外側で前記上部電極のオーバーハング部分の真下に配置されている、縦型電界効果トランジスタ。 - 前記複数の線状構造物の束は、それぞれ、前記下部電極上に成長した柱状半導体から構成されている、請求項1に記載の縦型電界効果トランジスタ。
- 前記柱状半導体は単結晶構造を有している、請求項2に記載の縦型電界効果トランジスタ。
- 前記活性領域の外周側面の位置は、前記上部電極の側面の位置に整合している、請求項1から3の何れかに記載の縦型電界効果トランジスタ。
- 前記誘電体部は、前記上部電極を支持する電気絶縁材料から形成されており、
前記上部電極の下面は、前記誘電体部または前記活性領域と接触している、請求項1から4の何れかに記載の縦型電界効果トランジスタ。 - 前記柱状半導体は、シリコン、ゲルマニウム、及び炭素からなる群から選択された少なくとも1つの元素を含有している請求項2に記載の縦型電界効果トランジスタ。
- 前記柱状半導体には、導電型を規定するドーパントが含有されている請求項2に記載の縦型電界効果トランジスタ。
- 前記基板は、半導体基板またはSOI基板である請求項1に記載の縦型電解効果トランジスタ。
- 基板と、前記基板上に形成された複数の電界効果トランジスタとを備える電子装置であって、
前記複数の電界効果トランジスタの少なくとも1つは、
荷電粒子を走行させるチャネル領域として機能する複数の線状構造物の束を有する活性領域と、
前記活性領域の下端に接続され、ソース領域およびドレイン領域の一方として機能する下部電極と、
前記活性領域の上端に接続され、前記ソース領域およびドレイン領域の他方として機能する上部電極と、
前記活性領域に含まれる線状構造物の束の少なくとも一部における導電性を制御するゲート電極と、
前記活性領域と前記ゲート電極との間に配置され、前記ゲート電極を前記線状構造物の束から電気的に絶縁するゲート絶縁膜と、
を備えた縦型電界効果トランジスタであって、
前記上部電極と前記下部電極との間に配置され、前記上部電極の側面に対して内側に外周側面を有した誘電体部を更に備え、
前記上部電極は、前記誘電体部を介して、前記下部電極の上に位置し、しかも、前記誘電体部の上面から横方向に突出し、前記誘電体部とは離間したオーバーハング部分を有しており、
前記活性領域は前記誘電体部の外周側面の外側で前記上部電極のオーバーハング部分の真下に配置されている、電子装置。 - 前記複数の電界効果トランジスタはCMOS回路を形成している請求項9に記載の電子装置。
- 大規模集積回路として動作する請求項9に記載の電子装置。
- 前記基板は、ガラス基板またはプラスチック基板である請求項9に記載の電子装置。
- 前記電界効果トランジスタは、前記基板上において画素ごとにマトリクス状に配置されており、
表示装置として動作する請求項9に記載の電子装置。 - 荷電粒子を走行させるチャネル領域として機能する複数の線状構造物の束を有する活性領域と、前記活性領域の下端に接続され、ソース領域およびドレイン領域の一方として機能する下部電極と、前記活性領域の上端に接続され、前記ソース領域およびドレイン領域の他方として機能する上部電極と、前記活性領域に含まれる線状構造物の束の少なくとも一部における導電性を制御するゲート電極と、前記活性領域と前記ゲート電極との間に配置され、前記ゲート電極を前記線状構造物の束から電気的に絶縁するゲート絶縁膜とを備えた縦型電界効果トランジスタの製造方法であって、
前記上部電極と前記下部電極との間に誘電体部が挟まれ、前記上部電極が前記誘電体部の上面から横方向に突出したオーバーハング部分を有している構造を形成する工程(A)と、
前記下部電極の上面において前記誘電体部が存在していない領域から前記上部電極におけるオーバーハング部分の下面に達するように複数の線状構造物の束を成長させる工程(B)と、
を含む、製造方法。 - 前記工程(A)は、
前記上部電極と前記下部電極との間に誘電体部が挟まれた構造を形成する工程(a1)と、
前記誘電体部の側面の少なくとも一部をサイドエッチによってセットバックさせる工程(a2)と、
を含む、請求項14に記載の製造方法。 - 前記工程(a2)は、ウェットエッチングによって前記誘電体部の側面をエッチングする工程を含む、請求項15に記載の製造方法。
- 前記工程(a1)は、
前記下部電極のための第1導電体膜を形成する工程と、
絶縁膜を前記第1導電体膜上に形成する工程と、
前記上部電極のための第2導電体膜を前記絶縁膜上に形成する工程と、
前記上部電極の位置および形状を規定するマスク層を前記第2導電体膜上に形成する工程と、
前記第2導電体膜のうち前記マスク層で覆われてない部分をエッチングすることにより、前記第2導電体膜から前記上部電極を形成する工程と、
前記絶縁膜をエッチングすることにより、前記誘電体部を形成する工程と、
前記第1導電体膜をパターニングすることにより、前記第1導電体膜から前記下部電極を形成する工程と、
を含む、請求項14に記載の製造方法。 - 前記工程(a1)は、
前記下部電極のための第1導電体膜を形成する工程と、
絶縁膜を前記第1導電体膜上に形成する工程と、
前記上部電極のための第2導電体膜を前記絶縁膜上に形成する工程と、
前記上部電極の位置および形状を規定するマスク層を前記第2導電体膜上に形成する工程と、
前記第2導電体膜のうち前記マスク層で覆われていない部分をエッチングすることにより、前記第2導電体膜から前記上部電極を形成する工程と、
前記上部電極をマスクとして前記絶縁膜をエッチングすることにより、前記誘電体部を形成する工程と、
を含む、請求項14に記載の製造方法。 - 前記絶縁膜は酸化シリコンまたは窒化シリコンから形成されている請求項17または18に記載の製造方法。
- 前記上部電極をマスクとする異方性エッチングを行なうことにより、前記複数の線状構造物のうち前記上部電極によって覆われていない部分を選択的に除去する工程(C)を更に含む請求項14から19のいずれかに記載の製造方法。
- 前記工程(B)は、CVD法により、前記線状構造物を成長させる工程を含む請求項14から20の何れかに記載の製造方法。
- 前記工程(A)は、前記第1導電体膜の堆積後に、線状構造物成長の触媒を付着させる工程を含む請求項21に記載の製造方法。
- 前記工程(A)は、前記絶縁膜の堆積後に、線状構造物成長の触媒を付着させる工程を含む請求項21または22に記載の製造方法。
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2005
- 2005-09-28 CN CNB2005800017622A patent/CN100490180C/zh not_active Expired - Fee Related
- 2005-09-28 JP JP2006539239A patent/JP4568286B2/ja not_active Expired - Fee Related
- 2005-09-28 WO PCT/JP2005/017830 patent/WO2006038504A1/ja active Application Filing
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JP2003086796A (ja) * | 2001-09-11 | 2003-03-20 | Fujitsu Ltd | 円筒状多層構造体による半導体装置 |
JP2004165297A (ja) * | 2002-11-11 | 2004-06-10 | Fujitsu Ltd | 半導体装置 |
JP2005159332A (ja) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びその作製方法 |
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US9679965B1 (en) | 2015-12-07 | 2017-06-13 | Samsung Electronics Co., Ltd. | Semiconductor device having a gate all around structure and a method for fabricating the same |
Also Published As
Publication number | Publication date |
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WO2006038504A1 (ja) | 2006-04-13 |
CN100490180C (zh) | 2009-05-20 |
US7586130B2 (en) | 2009-09-08 |
CN1906771A (zh) | 2007-01-31 |
US20060125025A1 (en) | 2006-06-15 |
JPWO2006038504A1 (ja) | 2008-05-15 |
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