JP4555950B2 - 微小電気機械装置を製造するための方法及びこの方法により得られる微小電気機械装置 - Google Patents
微小電気機械装置を製造するための方法及びこの方法により得られる微小電気機械装置 Download PDFInfo
- Publication number
- JP4555950B2 JP4555950B2 JP2004546267A JP2004546267A JP4555950B2 JP 4555950 B2 JP4555950 B2 JP 4555950B2 JP 2004546267 A JP2004546267 A JP 2004546267A JP 2004546267 A JP2004546267 A JP 2004546267A JP 4555950 B2 JP4555950 B2 JP 4555950B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- aluminum
- conductive layer
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00595—Control etch selectivity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/0142—Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (10)
- 微小電気機械装置を製造するための方法であって、第一の電極が内部に形成される第一の導電層と、第一の材料の第一の電気絶縁層と、前記第一の材料とは異なる第二の材料の第二の電気絶縁層と、第二の電極が内部において前記第一の電極と対向して横たわるように形成され、前記第一の電極と前記第一の絶縁層と共に前記装置を形成する第二の導電層とが基板上に連続して堆積され、前記第二の導電層が堆積された後に前記第二の導電層の材料に対して選択的なエッチング剤により前記第二の絶縁層が除去され、
前記第一の材料及び前記第二の材料のために、互いに対してのみ選択的にエッチングされるような材料が選ばれ、そして、前記第一の絶縁層の上面に前記第二の絶縁層を堆積するために、前記第一の材料に対して選択的にエッチングされるアルミニウム層が前記第一の電気絶縁層上に堆積される方法であって、
前記第二の絶縁層は最初に部分的に除去され、そして、前記アルミニウム層まで前記アルミニウム層に対して選択的に除去され、そして、前記第一の絶縁層に対して前記アルミニウム層が選択的に除去され、その後に、前記第二の絶縁層が全体的に除去されることを特徴とする方法。 - 前記第二の電気絶縁層の前記第二の材料は、前記アルミニウム層に対して選択的にエッチングされるように選ばれることを特徴とする請求項1に記載の方法。
- 前記第一及び第二の導電層の材料にアルミニウムが選ばれ、そして、前記アルミニウム層を除去するために、前記アルミニウム層のエッチング剤のためのマスク層により前記第二の導電層が覆われることを特徴とする請求項1又は2に記載の方法。
- 前記第一の材料のために窒化シリコンが選ばれ、そして、前記第二の材料のために酸化シリコンが選ばれることを特徴とする請求項1乃至3いずれかに記載の方法。
- 前記第二の絶縁層を除去するためのエッチング剤として、フッ化アンモニウム(NH 4 F)及びフッ化水素(HF)の水溶液が選ばれることを特徴とする請求項4に記載の方法。
- 前記第一及び第二の導電層はアルミニウムより作られることを特徴とする請求項1乃至2いずれかに記載の方法。
- 前記アルミニウム層のためのエッチング剤として燐酸、酢酸、そして、硫酸の混合物が選ばれることを特徴とする請求項6に記載の方法。
- 前記第一の導電層及び前記第二の導電層の両者は二組の複数分断部分から形成され、前記第二の導電層の前記複数分断部分は前記第一の導電層の前記複数分断部分の上部に形成されることを特徴とする請求項1乃至7いずれかに記載の方法。
- すべての層がCVD又はスパッタリングにより堆積されることを特徴とする請求項1乃至8いずれかに記載の方法。
- 請求項1乃至9いずれかに記載の方法を採用した電子装置を製造するための方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02079467 | 2002-10-24 | ||
PCT/IB2003/004586 WO2004037713A1 (en) | 2002-10-24 | 2003-10-17 | Method for manufacturing a micro-electromechanical device and micro-electromechanical device obtained therewith |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006503717A JP2006503717A (ja) | 2006-02-02 |
JP4555950B2 true JP4555950B2 (ja) | 2010-10-06 |
Family
ID=32116295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004546267A Expired - Fee Related JP4555950B2 (ja) | 2002-10-24 | 2003-10-17 | 微小電気機械装置を製造するための方法及びこの方法により得られる微小電気機械装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7303934B2 (ja) |
EP (1) | EP1556307A1 (ja) |
JP (1) | JP4555950B2 (ja) |
CN (1) | CN100415635C (ja) |
AU (1) | AU2003269351A1 (ja) |
WO (1) | WO2004037713A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE536623T1 (de) | 2004-10-27 | 2011-12-15 | Epcos Ag | Federstruktur für mems-vorrichtung |
TWI395258B (zh) * | 2005-11-11 | 2013-05-01 | Semiconductor Energy Lab | 微結構以及微機電系統的製造方法 |
JP4907297B2 (ja) * | 2005-11-11 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 微小構造体及び微小電気機械式装置の作製方法 |
US7982558B2 (en) * | 2006-06-29 | 2011-07-19 | Nxp B.V. | Integrated single-crystal MEMS device |
CN102209683B (zh) * | 2008-11-10 | 2015-08-05 | Nxp股份有限公司 | 具有侧壁泄露保护的mems器件封装 |
EP3774213B1 (en) | 2018-03-30 | 2022-03-30 | The Gillette Company LLC | Shaving razor cartridge and method of manufacture |
BR112020020139A2 (pt) | 2018-03-30 | 2021-01-05 | The Gillette Company Llc | Cartucho para aparelho de barbear ou depilar e método de fabricação |
US11826924B2 (en) | 2018-03-30 | 2023-11-28 | The Gillette Company Llc | Shaving razor cartridge and method of manufacture |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06343272A (ja) * | 1993-05-28 | 1994-12-13 | Sony Corp | マイクロマシンの製造方法 |
JP3361916B2 (ja) * | 1995-06-28 | 2003-01-07 | シャープ株式会社 | 微小構造の形成方法 |
US5638946A (en) * | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
US5945898A (en) * | 1996-05-31 | 1999-08-31 | The Regents Of The University Of California | Magnetic microactuator |
JP3441358B2 (ja) * | 1998-02-26 | 2003-09-02 | 日本電信電話株式会社 | 微小構造体の製造方法 |
KR100577410B1 (ko) * | 1999-11-30 | 2006-05-08 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
US7307775B2 (en) * | 2000-12-07 | 2007-12-11 | Texas Instruments Incorporated | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
JP2003168690A (ja) * | 2001-11-30 | 2003-06-13 | Seiko Epson Corp | トランジスタ及びトランジスタの製造方法 |
US6888658B2 (en) * | 2002-05-31 | 2005-05-03 | Lucent Technologies Inc. | Method and geometry for reducing drift in electrostatically actuated devices |
-
2003
- 2003-10-17 EP EP03751132A patent/EP1556307A1/en not_active Ceased
- 2003-10-17 US US10/531,934 patent/US7303934B2/en not_active Expired - Lifetime
- 2003-10-17 WO PCT/IB2003/004586 patent/WO2004037713A1/en active Application Filing
- 2003-10-17 AU AU2003269351A patent/AU2003269351A1/en not_active Abandoned
- 2003-10-17 CN CNB2003801020534A patent/CN100415635C/zh not_active Expired - Fee Related
- 2003-10-17 JP JP2004546267A patent/JP4555950B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006503717A (ja) | 2006-02-02 |
CN100415635C (zh) | 2008-09-03 |
AU2003269351A1 (en) | 2004-05-13 |
WO2004037713A1 (en) | 2004-05-06 |
US20060040505A1 (en) | 2006-02-23 |
US7303934B2 (en) | 2007-12-04 |
EP1556307A1 (en) | 2005-07-27 |
CN1708450A (zh) | 2005-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4744449B2 (ja) | 電子デバイスの製造方法及び電子デバイス | |
CN102602876A (zh) | Mems器件及其制造方法 | |
JP2005105416A (ja) | チタンベース材料の選択的等方性エッチングプロセス | |
JP4555950B2 (ja) | 微小電気機械装置を製造するための方法及びこの方法により得られる微小電気機械装置 | |
JP2006518911A (ja) | バンプ型memsスイッチ | |
JP6021914B2 (ja) | Memsキャビティ底からのシリコン残留物の消去 | |
KR100482029B1 (ko) | 엠아이엠 캐패시터 형성방법 | |
US6645819B2 (en) | Self-aligned fabrication method for a semiconductor device | |
US6975010B2 (en) | MEMS structure having a blocked-sacrificial layer support/anchor and a fabrication method of the same | |
US20020123008A1 (en) | Isotropic etch to form MIM capacitor top plates | |
US8143158B2 (en) | Method and device of preventing delamination of semiconductor layers | |
CN108751123B (zh) | 一种接触窗的形成方法 | |
KR100964116B1 (ko) | 반도체소자의 제조방법 | |
KR20100059276A (ko) | Pip 커패시터 제조 방법 | |
KR100457226B1 (ko) | 반도체 소자의 캐패시터 형성방법 | |
US6743731B1 (en) | Method for making a radio frequency component and component produced thereby | |
KR19990086156A (ko) | 반도체소자의 제조방법 | |
US6436839B1 (en) | Increasing programming silicide process window by forming native oxide film on amourphous Si after metal etching | |
US5480831A (en) | Method of forming a self-aligned capacitor | |
KR100591170B1 (ko) | 산화막/질화막/산화막 구조 및 고전압 소자를 갖는 반도체소자의 제조 방법 | |
KR100418856B1 (ko) | 반도체 소자의 캐패시터 제조 방법 | |
KR100529624B1 (ko) | 반도체 소자의 금속-절연체-금속 커패시터 제조 방법 | |
KR100191709B1 (ko) | 미세 콘택홀의 형성방법 | |
KR101190848B1 (ko) | 반도체 소자의 mim 캐패시터 제조방법 | |
KR20050046349A (ko) | 반도체 소자의 엠아이엠 캐패시터 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061016 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20080619 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090731 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091102 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091127 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100329 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100405 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100423 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100524 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100527 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100622 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100622 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100622 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4555950 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130730 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |