JP4535151B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 93
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 47
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims description 110
- 238000002161 passivation Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 description 7
- 150000003949 imides Chemical class 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
これにより、上述したパッシベーション膜(6)のうち表面電極(4、5)と外部との電気的接続を行うための開口部(6a)の開口端から半導体チップの端面に至る凹凸面(6d)の距離に関して、該パッシベーション膜(6)の下地表面の形状を受け継いだ場合の表面を経路とした距離(L1)と比較して凹凸面(6d)の表面上を経路とする距離(L2)の方が長くなる構造を製造することが可能となる。
本発明の第1実施形態について説明する。本実施形態では、縦型パワー素子としてSBDを備えたSiC半導体装置を例に挙げて説明する。
本発明の第2実施形態について説明する。本実施形態のSiC半導体装置は、第1実施形態に対してパッシベーション膜6の構造を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態のSiC半導体装置も、第1実施形態に対してパッシベーション膜6の構造を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
上記各実施形態では、パッシベーション膜6を2層構造とした場合について説明したが、1層構造としても構わない。ただし、2層構造とした場合、1層目と2層目とを異なる材質で形成すれば、第1層6bをストッパとして第2層6cの表面に凹凸面6dを形成するためのエッチング工程を行うようにすることができるため、第1層6bにてパッシベーション効果を確保しつつ、第2層6cにて開口部6aの開口端から半導体チップの端面までの距離L2を稼ぐという役割分担を行うことも可能となる。
1a 主表面
1b 裏面
2 n-型ドリフト層
3 絶縁膜
3a 開口部
4 ショットキー電極
5 配線電極
6 パッシベーション膜
6a 開口部
7 裏面電極
8 p型リサーフ層
9 導体層
9a 第1層
9b 第2層
10 SBD
20 実装基板
Claims (2)
- 主表面(1a)および裏面(1b)を有し、炭化珪素からなる基板(1)と、
前記基板(1)の前記主表面(1a)上に形成され、前記基板(1)よりも低不純物濃度とされた第1導電型の炭化珪素からなるドリフト層(2)と、
前記ドリフト層(2)の表面に形成され、開口部(3a)が備えられた層間絶縁膜(3)と、
前記ドリフト層(2)におけるセル部に形成された半導体素子(10)と、
前記ドリフト層(2)上において、前記層間絶縁膜(3)の前記開口部を通じて前記半導体素子(10)と電気的に接続された表面電極(4、5)と、
前記表面電極(4、5)の外縁部を覆いつつ、前記セル部の外周部において前記ドリフト層(2)の上部を覆うように配置されたパッシベーション膜(6)と、
前記基板(1)の裏面(1b)において、前記半導体素子(10)と電気的に接続された裏面電極(7)と、を有してなり、チップ単位に分割されて半導体チップとされた炭化珪素半導体装置の製造方法であって、
前記表面電極(4、5)の外縁部を覆いつつ、前記セル部の外周部において前記ドリフト層(2)を覆うように前記パッシベーション膜(6)を形成する工程を有し、
前記パッシベーション膜(6)を形成する工程では、前記パッシベーション膜(6)を2層構造にて構成し、該パッシベーション膜(6)の下地表面の形状を引き継いだ形状とされた第1層(6b)を形成する工程と、前記第1層(6b)上に第2層(6c)を形成する工程と、を有し、前記第2層(6c)をエッチングして凹凸面(6d)を形成することで、該パッシベーション膜(6)の表面に、該パッシベーション膜(6)の下地表面の形状を受け継がない凹凸面(6d)を形成する工程を行うことにより、前記パッシベーション膜(6)のうち前記表面電極(4、5)と外部との電気的接続を行うための開口部(6a)の開口端から前記半導体チップの端面に至る前記凹凸面(6d)の距離に関して、該パッシベーション膜(6)の下地表面の形状を受け継いだ場合の表面を経路とした距離(L1)と比較して、前記凹凸面(6d)の表面上を経路とする距離(L2)の方が長くなるようにすることを特徴とする炭化珪素半導体装置の製造方法。 - 前記パッシベーション膜(6)を形成する工程では、前記第1層(6b)と前記第2層(6c)とを異なる材質のもので構成し、前記第1層(6b)をストッパとして前記第2層(6c)の表面に前記凹凸面(6d)を形成するためのエッチング工程を行うことを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
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