JP4512976B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP4512976B2 JP4512976B2 JP2003411873A JP2003411873A JP4512976B2 JP 4512976 B2 JP4512976 B2 JP 4512976B2 JP 2003411873 A JP2003411873 A JP 2003411873A JP 2003411873 A JP2003411873 A JP 2003411873A JP 4512976 B2 JP4512976 B2 JP 4512976B2
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- Japan
- Prior art keywords
- wiring
- region
- lead
- liquid crystal
- dummy pattern
- Prior art date
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Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 61
- 239000000758 substrate Substances 0.000 claims description 113
- 239000003566 sealing material Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000605 extraction Methods 0.000 claims description 13
- 239000000470 constituent Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 49
- 239000010408 film Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000002161 passivation Methods 0.000 description 9
- 238000001723 curing Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
また、本発明においては、前記第2の配線は、前記薄膜トランジスタを構成する半導体層と、ドレイン配線を形成する金属層とが積層された積層構造をなすようにしてもよい。
2 TFT基板
3 対向基板
4 液晶材
5 シール材
6 シール材配設領域
7 フレキシブル基板
8 引き出し配線
9 ダミーパターン
10 TFT
11 透明絶縁基板
12 ゲート配線
12a ゲート電極
13 ゲート絶縁膜
14a a−Si層
14b n+a−Si層
15 半導体層
16 ドレイン配線
16a ドレイン電極
17 ソース電極
18 パッシベーション膜
19 画素電極
20 コンタクト部
Claims (6)
- 透明絶縁基板上に、互いに略直交する下層側の第1の配線と上層側の第2の配線とが配設され、前記第1の配線と前記第2の配線とで囲まれる各々の領域に薄膜トランジスタを備えるTFT基板と、該TFT基板に対向する対向基板とが、少なくとも一方の基板の周縁に配設されるシール材で貼り合わされ、前記TFT基板と前記対向基板との間に液晶が挟持される液晶表示装置において、
前記TFT基板の2辺の周縁には、前記第1の配線又は前記第2の配線と外部回路とを接続するための引き出し配線が形成されており、
前記引き出し配線が形成される領域の内の前記シール材が配設される領域は、前記引き出し配線が前記TFT基板の辺に対して斜め方向に形成されている第1の領域と、前記引き出し配線が前記辺に直交する方向に形成されている第2の領域と、前記引き出し配線が形成されていない第3の領域とに分類され、
前記引き出し配線の密集度は、前記第1の領域、前記第2の領域、前記第3の領域の順に小さく、
少なくとも、前記第2の領域及び前記第3の領域には、前記引き出し配線と異なる層に、前記第1の配線又は前記第2の配線と同層に形成されるダミーパターンが、該引き出し配線と重ならないように、かつ、前記第1の領域、前記第2の領域及び前記第3の領域における、前記引き出し配線の密集度の相違量よりも前記ダミーパターンと前記引き出し配線とを合わせた配線の密集度の相違量の方が小さくなるように配設され、
前記ダミーパターンにより、前記引き出し配線の密集度の不均一により生じるギャップムラが抑制されることを特徴とする液晶表示装置。 - 前記第2の領域では、隣接する前記引き出し配線の間に、略平行な複数本の前記ダミーパターン又は点状の前記ダミーパターンが配設されていることを特徴とする請求項1記載の液晶表示装置。
- 前記第1乃至第3の領域に対して、該領域内に設けられている全ての構成部材を足し合わせた断面積を該領域の幅で割って計算される平均段差の最大値と最小値との差が、0.3μm以下となるように前記ダミーパターンが配設されることを特徴とする請求項1又は2に記載の液晶表示装置。
- 前記シール材が前記TFT基板の裏面から照射される光によって硬化する材料で形成されている場合に、前記基板の法線方向から見て、前記シール材が配設される領域における前記引き出し配線又は前記ダミーパターンが形成されていない領域の面積の比率が25%以上に設定されていることを特徴とする請求項1乃至3のいずれか一に記載の液晶表示装置。
- 前記シール材が前記TFT基板の裏面から照射される光によって硬化する材料で形成されている場合に、前記ダミーパターンの幅が、略80μm以下に設定されていることを特徴とする請求項1乃至4のいずれか一に記載の液晶表示装置。
- 前記第2の配線は、前記薄膜トランジスタを構成する半導体層と、ドレイン配線を形成する金属層とが積層された積層構造をなすことを特徴とする請求項1乃至5のいずれか一に記載の液晶表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003411873A JP4512976B2 (ja) | 2003-12-10 | 2003-12-10 | 液晶表示装置 |
TW093137736A TWI269109B (en) | 2003-12-10 | 2004-12-07 | Liquid crystal display device and method of manufacturing the same |
US11/007,157 US7280178B2 (en) | 2003-12-10 | 2004-12-09 | Liquid crystal display device and method of manufacturing the same |
KR1020040104009A KR100704062B1 (ko) | 2003-12-10 | 2004-12-10 | 액정 디스플레이 장치 및 그 제조 방법 |
CNB2004101000946A CN100394288C (zh) | 2003-12-10 | 2004-12-10 | 液晶显示设备以及制造该设备的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003411873A JP4512976B2 (ja) | 2003-12-10 | 2003-12-10 | 液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005173108A JP2005173108A (ja) | 2005-06-30 |
JP4512976B2 true JP4512976B2 (ja) | 2010-07-28 |
Family
ID=34650450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003411873A Expired - Fee Related JP4512976B2 (ja) | 2003-12-10 | 2003-12-10 | 液晶表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7280178B2 (ja) |
JP (1) | JP4512976B2 (ja) |
KR (1) | KR100704062B1 (ja) |
CN (1) | CN100394288C (ja) |
TW (1) | TWI269109B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11489024B2 (en) | 2020-01-22 | 2022-11-01 | Samsung Display Co., Ltd. | Display device |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3938367B2 (ja) * | 2002-09-03 | 2007-06-27 | シャープ株式会社 | 電子モジュールおよびそれに用いる駆動回路基板 |
JP4514514B2 (ja) * | 2004-05-24 | 2010-07-28 | シャープ株式会社 | デバイス基板及び液晶表示装置 |
TWI343492B (en) * | 2005-02-01 | 2011-06-11 | Samsung Electronics Co Ltd | Liquid crystal display and method of fabricating the same |
JP4940642B2 (ja) * | 2005-12-05 | 2012-05-30 | カシオ計算機株式会社 | 液晶表示装置の配線パターン |
JP5309568B2 (ja) * | 2008-01-10 | 2013-10-09 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP5175164B2 (ja) * | 2008-11-25 | 2013-04-03 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置 |
TWI384603B (zh) * | 2009-02-17 | 2013-02-01 | Advanced Semiconductor Eng | 基板結構及應用其之封裝結構 |
CN101963714B (zh) * | 2009-07-22 | 2012-07-04 | 群康科技(深圳)有限公司 | 液晶面板及其制造方法 |
TWI405021B (zh) * | 2009-11-13 | 2013-08-11 | Au Optronics Corp | 顯示面板 |
JP2012123038A (ja) * | 2010-12-06 | 2012-06-28 | Toray Ind Inc | 液晶表示装置用カラーフィルタ基板の製造方法 |
JP5733023B2 (ja) * | 2011-05-24 | 2015-06-10 | 大日本印刷株式会社 | 電子ペーパー用背面電極基材および電子ペーパー |
JP5733157B2 (ja) * | 2011-11-01 | 2015-06-10 | 三菱電機株式会社 | 液晶表示装置 |
WO2014174891A1 (ja) * | 2013-04-25 | 2014-10-30 | シャープ株式会社 | 表示装置 |
US9442366B2 (en) * | 2014-12-31 | 2016-09-13 | Macronix International Co., Ltd. | Layout pattern and photomask including the same |
CN105826313B (zh) * | 2015-01-04 | 2019-01-15 | 旺宏电子股份有限公司 | 布局图案以及包含该布局图案的掩模 |
KR102372210B1 (ko) * | 2015-03-23 | 2022-03-08 | 삼성디스플레이 주식회사 | 표시 장치 |
CN106681068A (zh) * | 2016-12-28 | 2017-05-17 | 深圳市华星光电技术有限公司 | 显示面板及显示装置 |
KR102481468B1 (ko) | 2018-01-04 | 2022-12-26 | 삼성디스플레이 주식회사 | 표시 장치 |
JP7269051B2 (ja) * | 2019-03-22 | 2023-05-08 | 株式会社ジャパンディスプレイ | 表示装置 |
KR20210148547A (ko) * | 2020-05-29 | 2021-12-08 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
WO2022067520A1 (zh) * | 2020-09-29 | 2022-04-07 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
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JPH0682811A (ja) * | 1992-07-15 | 1994-03-25 | Toshiba Corp | 液晶表示装置 |
JPH0876137A (ja) * | 1994-09-08 | 1996-03-22 | Hitachi Ltd | 液晶表示装置 |
JPH09179131A (ja) * | 1995-12-27 | 1997-07-11 | Hitachi Ltd | 液晶表示装置 |
JPH09179130A (ja) * | 1995-12-21 | 1997-07-11 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
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JPH1068963A (ja) * | 1996-08-29 | 1998-03-10 | Sharp Corp | 液晶表示装置 |
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-
2003
- 2003-12-10 JP JP2003411873A patent/JP4512976B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-07 TW TW093137736A patent/TWI269109B/zh not_active IP Right Cessation
- 2004-12-09 US US11/007,157 patent/US7280178B2/en active Active
- 2004-12-10 CN CNB2004101000946A patent/CN100394288C/zh not_active Expired - Fee Related
- 2004-12-10 KR KR1020040104009A patent/KR100704062B1/ko active IP Right Grant
Patent Citations (10)
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JPH0682811A (ja) * | 1992-07-15 | 1994-03-25 | Toshiba Corp | 液晶表示装置 |
JPH0876137A (ja) * | 1994-09-08 | 1996-03-22 | Hitachi Ltd | 液晶表示装置 |
JPH09179130A (ja) * | 1995-12-21 | 1997-07-11 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
JPH09179131A (ja) * | 1995-12-27 | 1997-07-11 | Hitachi Ltd | 液晶表示装置 |
JPH09197415A (ja) * | 1996-01-12 | 1997-07-31 | Casio Comput Co Ltd | 液晶セル |
JPH1068963A (ja) * | 1996-08-29 | 1998-03-10 | Sharp Corp | 液晶表示装置 |
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JP2003302916A (ja) * | 1997-06-17 | 2003-10-24 | Seiko Epson Corp | 電気光学装置用基板、電気光学装置、電子機器及び投写型表示装置 |
JPH11109376A (ja) * | 1997-10-06 | 1999-04-23 | Sharp Corp | 液晶表示素子 |
JP2002244586A (ja) * | 2001-02-06 | 2002-08-30 | Internatl Business Mach Corp <Ibm> | 表示装置用アレイ基板、アレイ基板の製造方法、および該アレイ基板を用いた表示デバイス |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11489024B2 (en) | 2020-01-22 | 2022-11-01 | Samsung Display Co., Ltd. | Display device |
Also Published As
Publication number | Publication date |
---|---|
KR100704062B1 (ko) | 2007-04-05 |
TWI269109B (en) | 2006-12-21 |
US7280178B2 (en) | 2007-10-09 |
CN100394288C (zh) | 2008-06-11 |
US20050128416A1 (en) | 2005-06-16 |
JP2005173108A (ja) | 2005-06-30 |
CN1627170A (zh) | 2005-06-15 |
TW200527090A (en) | 2005-08-16 |
KR20050056896A (ko) | 2005-06-16 |
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