JP4486015B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP4486015B2 JP4486015B2 JP2005265387A JP2005265387A JP4486015B2 JP 4486015 B2 JP4486015 B2 JP 4486015B2 JP 2005265387 A JP2005265387 A JP 2005265387A JP 2005265387 A JP2005265387 A JP 2005265387A JP 4486015 B2 JP4486015 B2 JP 4486015B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- wiring
- transfer gate
- pixel
- floating diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 17
- 238000012546 transfer Methods 0.000 claims description 44
- 238000009792 diffusion process Methods 0.000 claims description 22
- 230000003321 amplification Effects 0.000 claims description 16
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 17
- 238000002955 isolation Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
図1(a)は、本発明の実施形態に係る固体撮像装置(CMOSセンサ)の画素セル内の平面レイアウト図であって、図10(b)に示す回路を実現するレイアウトを示している。また、図1(b)は、図1(a)のA−A線断面図である。そして、図2は、画素領域において、画素ペア1が行列方向(xy方向)に配置されている様子を示している。
2a,2b 画素
3a,3b フォトダイオード
4a,4b 転送ゲート電極
5 フローティングディフュージョン
6 リセットトランジスタ
7 リセットトランジスタのソース領域
8 リセットゲート電極
9 リセットトランジスタのドレイン領域または増幅トランジスタのソース領域
10 増幅ゲート電極
11 増幅トランジスタのドレイン領域
12 増幅トランジスタ
13 選択トランジスタ
14a−1,14b−1,14a−2,14b−2 配線
15 垂直信号線
16 配線
17 配線
18 配線
19 素子分離部
20a,20b 受光領域
21 シリコン基板
22a,22b 開口
C1〜C5 コンタクト
Claims (1)
- フォトダイオードと当該フォトダイオードに蓄積された電荷を浮遊拡散部に転送するための転送ゲート電極とをそれぞれ個別に備えて、かつ、列方向に隣接する2つがペアを組んで前記浮遊拡散部と当該浮遊拡散部にゲート電極が接続されたMOS型の増幅トランジスタとを共用する構成になった画素が、半導体基板表面の画素領域に行列方向に配置された固体撮像装置であって、
各画素における前記フォトダイオードの受光領域および前記転送ゲート電極並びに前記浮遊拡散部は、いずれも行および列方向に延びて直交する2直線のみの組み合わせで描写できる平面形状をして行方向に順に並んでおり、かつ、ペアを組む2画素間で線対称に配置され、
各画素における前記転送ゲート電極の配線は、ペアを組む2画素の前記受光領域間を行方向に延びて前記転送ゲート電極の一端に接続された第1の配線と、前記転送ゲート電極の他端に接続されて、前記浮遊拡散部の一部を周回し、行方向に隣接した画素の前記第1の配線に接続された第2の配線とで構成され、
前記転送ゲート電極と前記第1の配線と前記第2の配線とは一体に形成され、
前記受光領域および前記転送ゲート電極並びに前記浮遊拡散部は、いずれも列方向に延びる直線が長辺をなす長方形状であり、
前記ペアを組む画素は、前記浮遊拡散部を基準電位に接続するためのMOS型のリセットトランジスタをさらに備え、
前記増幅トランジスタおよび前記リセットトランジスタのソース・ドレイン領域、および、前記浮遊拡散部は、列方向に延びる同一直線上に配置され、
前記リセットトランジスタのゲート電極およびその配線は、列方向で隣接して別のペアに属する画素の前記受光領域間を行方向に延びる直線上に配置され、
前記リセットトランジスタのゲート電極およびその配線は、一体に形成されていることを特徴とする、固体撮像装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005265387A JP4486015B2 (ja) | 2005-09-13 | 2005-09-13 | 固体撮像装置 |
TW095126171A TW200713573A (en) | 2005-09-13 | 2006-07-18 | Solid-state image pickup device |
US11/494,727 US7595829B2 (en) | 2005-09-13 | 2006-07-28 | Solid-state image pickup device |
EP06119209A EP1763222A2 (en) | 2005-09-13 | 2006-08-21 | Solid-state image pickup device |
CNA2006101213458A CN1933170A (zh) | 2005-09-13 | 2006-08-22 | 固态图像拾取器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005265387A JP4486015B2 (ja) | 2005-09-13 | 2005-09-13 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007081033A JP2007081033A (ja) | 2007-03-29 |
JP4486015B2 true JP4486015B2 (ja) | 2010-06-23 |
Family
ID=37517069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005265387A Expired - Fee Related JP4486015B2 (ja) | 2005-09-13 | 2005-09-13 | 固体撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7595829B2 (ja) |
EP (1) | EP1763222A2 (ja) |
JP (1) | JP4486015B2 (ja) |
CN (1) | CN1933170A (ja) |
TW (1) | TW200713573A (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4350768B2 (ja) | 2007-04-16 | 2009-10-21 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
US7924333B2 (en) | 2007-08-17 | 2011-04-12 | Aptina Imaging Corporation | Method and apparatus providing shared pixel straight gate architecture |
US7964929B2 (en) * | 2007-08-23 | 2011-06-21 | Aptina Imaging Corporation | Method and apparatus providing imager pixels with shared pixel components |
JP2009059811A (ja) * | 2007-08-30 | 2009-03-19 | Sharp Corp | 固体撮像装置および電子情報機器 |
US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
JP4952601B2 (ja) * | 2008-02-04 | 2012-06-13 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置 |
KR101503682B1 (ko) * | 2008-04-18 | 2015-03-20 | 삼성전자 주식회사 | 공유 픽셀형 이미지 센서 및 그 제조 방법 |
JP5243100B2 (ja) * | 2008-05-12 | 2013-07-24 | ブレインビジョン株式会社 | 固体撮像素子の画素構造 |
TWI425629B (zh) * | 2009-03-30 | 2014-02-01 | Sony Corp | 固態影像拾取裝置及其製造方法,影像拾取裝置及電子裝置 |
JP5489570B2 (ja) * | 2009-07-27 | 2014-05-14 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP5564874B2 (ja) * | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
JP5422455B2 (ja) * | 2010-03-23 | 2014-02-19 | パナソニック株式会社 | 固体撮像装置 |
JP2013038174A (ja) | 2011-08-05 | 2013-02-21 | Canon Inc | 軟x線検出装置、及び軟x線検出システム |
KR102656723B1 (ko) | 2015-04-07 | 2024-04-12 | 소니그룹주식회사 | 고체 촬상 소자 및 전자 장치 |
US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
US10313622B2 (en) * | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6021172A (en) * | 1994-01-28 | 2000-02-01 | California Institute Of Technology | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter |
US5631704A (en) * | 1994-10-14 | 1997-05-20 | Lucent Technologies, Inc. | Active pixel sensor and imaging system having differential mode |
JP3031606B2 (ja) * | 1995-08-02 | 2000-04-10 | キヤノン株式会社 | 固体撮像装置と画像撮像装置 |
JP3774499B2 (ja) * | 1996-01-24 | 2006-05-17 | キヤノン株式会社 | 光電変換装置 |
US6033478A (en) | 1996-11-05 | 2000-03-07 | Applied Materials, Inc. | Wafer support with improved temperature control |
US6160281A (en) * | 1997-02-28 | 2000-12-12 | Eastman Kodak Company | Active pixel sensor with inter-pixel function sharing |
US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
US6714239B2 (en) * | 1997-10-29 | 2004-03-30 | Eastman Kodak Company | Active pixel sensor with programmable color balance |
US6977684B1 (en) * | 1998-04-30 | 2005-12-20 | Canon Kabushiki Kaisha | Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus |
KR19990084630A (ko) * | 1998-05-08 | 1999-12-06 | 김영환 | 씨모스 이미지 센서 및 그 구동 방법 |
US6466266B1 (en) * | 1998-07-28 | 2002-10-15 | Eastman Kodak Company | Active pixel sensor with shared row timing signals |
FR2781929B1 (fr) * | 1998-07-28 | 2002-08-30 | St Microelectronics Sa | Capteur d'image a reseau de photodiodes |
US6624850B1 (en) * | 1998-12-30 | 2003-09-23 | Eastman Kodak Company | Photogate active pixel sensor with high fill factor and correlated double sampling |
US6657665B1 (en) * | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
US6486913B1 (en) * | 1999-09-30 | 2002-11-26 | Intel Corporation | Pixel array with shared reset circuitry |
US20050224842A1 (en) * | 2002-06-12 | 2005-10-13 | Takayuki Toyama | Solid-state imaging device, method for driving dolid-state imaging device, imaging method, and imager |
CN1225897C (zh) * | 2002-08-21 | 2005-11-02 | 佳能株式会社 | 摄像装置 |
JP4298276B2 (ja) * | 2002-12-03 | 2009-07-15 | キヤノン株式会社 | 光電変換装置 |
US7436010B2 (en) | 2003-02-13 | 2008-10-14 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging apparatus, method for driving the same and camera using the same |
JP3916612B2 (ja) * | 2003-02-13 | 2007-05-16 | 松下電器産業株式会社 | 固体撮像装置、その駆動方法及びそれを用いたカメラ |
JP3794637B2 (ja) * | 2003-03-07 | 2006-07-05 | 松下電器産業株式会社 | 固体撮像装置 |
JP2004335582A (ja) * | 2003-05-01 | 2004-11-25 | Canon Inc | 光電変換装置 |
JP4389720B2 (ja) * | 2004-08-09 | 2009-12-24 | セイコーエプソン株式会社 | 固体撮像装置および固体撮像装置の駆動方法 |
JP4224036B2 (ja) * | 2005-03-17 | 2009-02-12 | 富士通マイクロエレクトロニクス株式会社 | フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法 |
US7446357B2 (en) * | 2005-05-11 | 2008-11-04 | Micron Technology, Inc. | Split trunk pixel layout |
-
2005
- 2005-09-13 JP JP2005265387A patent/JP4486015B2/ja not_active Expired - Fee Related
-
2006
- 2006-07-18 TW TW095126171A patent/TW200713573A/zh unknown
- 2006-07-28 US US11/494,727 patent/US7595829B2/en not_active Expired - Fee Related
- 2006-08-21 EP EP06119209A patent/EP1763222A2/en not_active Withdrawn
- 2006-08-22 CN CNA2006101213458A patent/CN1933170A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2007081033A (ja) | 2007-03-29 |
EP1763222A2 (en) | 2007-03-14 |
CN1933170A (zh) | 2007-03-21 |
TW200713573A (en) | 2007-04-01 |
US20070058062A1 (en) | 2007-03-15 |
US7595829B2 (en) | 2009-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4486015B2 (ja) | 固体撮像装置 | |
KR100736192B1 (ko) | 고체 촬상 장치 | |
US8088639B2 (en) | Solid-state image pickup device | |
US9318523B2 (en) | Solid-state imaging device | |
US9799690B2 (en) | Solid-state image pickup device | |
JP6406585B2 (ja) | 撮像装置 | |
US20060208289A1 (en) | MOS image sensor | |
EP1804297A1 (en) | Semiconductor imaging device | |
JP5487798B2 (ja) | 固体撮像装置、電子機器および固体撮像装置の製造方法 | |
JP2007095917A (ja) | 固体撮像装置 | |
JP2006261411A (ja) | フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法 | |
US9136407B2 (en) | Solid-state image sensor, method of manufacturing the same, and camera | |
JP2009071310A (ja) | イメージセンサー及びその製造方法 | |
US7372491B2 (en) | CMOS image sensor | |
US8980540B2 (en) | Method of manufacturing solid-state image sensor | |
JP6727897B2 (ja) | 固体撮像装置、固体撮像装置の製造方法、および撮像システム | |
US20070145443A1 (en) | CMOS Image Sensor and Method of Manufacturing the Same | |
US9029182B2 (en) | Method of manufacturing solid-state image sensor | |
KR20070030659A (ko) | 고체 촬상 장치 | |
KR20070073633A (ko) | 고체 촬상 장치 | |
KR20090111292A (ko) | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080423 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090618 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090807 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091013 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091214 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100303 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100325 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130402 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130402 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140402 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |