JP4476880B2 - 絶縁膜の形成方法、半導体装置の製造方法、半導体装置 - Google Patents
絶縁膜の形成方法、半導体装置の製造方法、半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 51
- 239000007800 oxidant agent Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910001868 water Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 168
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000002955 isolation Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VLYNEXSJZWRPQG-UHFFFAOYSA-N CCN([Hf])CC Chemical compound CCN([Hf])CC VLYNEXSJZWRPQG-UHFFFAOYSA-N 0.000 description 1
- ISIOTYRJSLJSGV-UHFFFAOYSA-N CCN[Hf] Chemical compound CCN[Hf] ISIOTYRJSLJSGV-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
Claims (5)
- 酸化剤に曝されることによりその表面に酸化膜を形成する材料からなる下地膜を形成する工程と、
金属原料を含むソースガスと第1酸化力を有する第1酸化剤とを交互に供給することにより、前記下地膜上に第1絶縁膜を形成する工程と、
金属原料を含むソースガスと前記第1酸化力より強い第2酸化力を有する第2酸化剤とを交互に供給することにより、前記第1絶縁膜上に第2絶縁膜を形成する工程と、
を具備することを特徴とする絶縁膜の形成方法。 - 前記第1酸化剤が、水または酸素または一酸化窒素であることを特徴とする請求項1に記載の絶縁膜の形成方法。
- 前記第1酸化剤を供給する回数が、1回または2回であることを特徴とする請求項1に記載の絶縁膜の形成方法。
- 半導体基板上に第1絶縁膜を形成する工程と、
前記第1絶縁膜上に、酸化剤に曝されることによりその表面に酸化膜を形成する材料からなる第1導電膜を形成する工程と、
金属原料を含むソースガスと第1酸化力を有する第1酸化剤とを交互に供給することにより、前記第1導電膜上に第2絶縁膜を形成する工程と、
金属原料を含むソースガスと前記第1酸化力より強い第2酸化力を有する第2酸化剤とを交互に供給することにより、前記第2絶縁膜上に第3絶縁膜を形成する工程と、
前記第3絶縁膜上に第2導電膜を形成する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 半導体基板と、
前記半導体基板上に設けられた第1絶縁膜と、
前記第1絶縁膜上に設けられ、酸化剤に曝されることによりその表面に酸化膜を形成する材料からなる第1導電膜と、
前記第1導電膜上に設けられ、前記第1導電膜上に位置する第1部分と前記第1部分上に位置し且つ前記第1部分の平均炭素濃度より低い炭素濃度を有する第2部分とからなる、第2絶縁膜と、
前記第2絶縁膜上に設けられた第2導電膜と、
を具備することを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2005185192A JP4476880B2 (ja) | 2005-06-24 | 2005-06-24 | 絶縁膜の形成方法、半導体装置の製造方法、半導体装置 |
US11/270,536 US7521263B2 (en) | 2005-06-24 | 2005-11-10 | Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device |
KR1020060056768A KR100777964B1 (ko) | 2005-06-24 | 2006-06-23 | 절연막의 형성 방법, 반도체 장치의 제조 방법 및 반도체장치 |
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JP2005185192A JP4476880B2 (ja) | 2005-06-24 | 2005-06-24 | 絶縁膜の形成方法、半導体装置の製造方法、半導体装置 |
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JP2007005633A JP2007005633A (ja) | 2007-01-11 |
JP4476880B2 true JP4476880B2 (ja) | 2010-06-09 |
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Cited By (1)
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US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
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US7354872B2 (en) * | 2005-05-26 | 2008-04-08 | International Business Machines Corporation | Hi-K dielectric layer deposition methods |
JP4331189B2 (ja) * | 2006-09-20 | 2009-09-16 | 株式会社東芝 | 不揮発性半導体メモリ |
JP4836761B2 (ja) * | 2006-11-29 | 2011-12-14 | 株式会社日立国際電気 | 半導体デバイスの製造方法 |
JP2010267925A (ja) * | 2009-05-18 | 2010-11-25 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2013187324A (ja) * | 2012-03-07 | 2013-09-19 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP2015188028A (ja) | 2014-03-27 | 2015-10-29 | 東京エレクトロン株式会社 | 薄膜形成方法、及び、薄膜形成装置 |
JP7123100B2 (ja) * | 2020-09-24 | 2022-08-22 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
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JP2793416B2 (ja) | 1992-03-06 | 1998-09-03 | 沖電気工業株式会社 | 絶縁膜形成方法 |
KR0183792B1 (ko) * | 1995-12-28 | 1999-03-20 | 김광호 | 불휘발성 메모리장치 및 그 제조방법 |
KR100307625B1 (ko) * | 1998-07-21 | 2001-12-17 | 윤종용 | 서로다른질소농도를갖는게이트절연막을갖춘반도체소자및그제조방법 |
DE10049257B4 (de) | 1999-10-06 | 2015-05-13 | Samsung Electronics Co., Ltd. | Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition |
US6576053B1 (en) | 1999-10-06 | 2003-06-10 | Samsung Electronics Co., Ltd. | Method of forming thin film using atomic layer deposition method |
JP3437832B2 (ja) | 2000-03-22 | 2003-08-18 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP4357146B2 (ja) | 2001-10-17 | 2009-11-04 | 富士通マイクロエレクトロニクス株式会社 | 酸化物誘電体膜の成膜方法及び半導体装置の製造方法 |
KR100469158B1 (ko) | 2002-12-30 | 2005-02-02 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
KR100593645B1 (ko) * | 2004-10-28 | 2006-06-28 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
US10242864B2 (en) | 2012-04-12 | 2019-03-26 | Versum Materials Us, Llc | High temperature atomic layer deposition of silicon oxide thin films |
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US7521263B2 (en) | 2009-04-21 |
KR100777964B1 (ko) | 2007-11-21 |
US20070020957A1 (en) | 2007-01-25 |
KR20060135543A (ko) | 2006-12-29 |
JP2007005633A (ja) | 2007-01-11 |
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