JP4855958B2 - 不揮発性半導体記憶装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 55
- 238000002955 isolation Methods 0.000 claims description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000005121 nitriding Methods 0.000 claims description 12
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 230000000694 effects Effects 0.000 description 20
- 150000004767 nitrides Chemical class 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 229910052801 chlorine Inorganic materials 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 239000000460 chlorine Substances 0.000 description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- MFHHXXRRFHXQJZ-UHFFFAOYSA-N NONON Chemical compound NONON MFHHXXRRFHXQJZ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
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- Non-Volatile Memory (AREA)
Description
本発明の第1の実施形態に係る不揮発性半導体記憶装置の製造工程を、図1乃至図7に示す断面図を用いて説明する。
本発明の第2の実施形態に係る不揮発性半導体記憶装置の製造工程を説明する。
本発明の第3の実施形態に係る不揮発性半導体記憶装置の製造工程を説明する。
4…シリコン窒化膜、5…シリコン酸化膜、6、12…フォトレジスト、
7…素子分離用の絶縁膜、8…電極間絶縁膜(第2の絶縁層)、
9…第2の導電層(制御ゲート電極層)、10…マスク材、11…シリコン酸化膜、
20…ソース及びドレイン領域、81、83…シリコン酸化膜、
82…シリコン酸窒化膜。
Claims (4)
- 半導体基板の主表面に第1の絶縁層を形成する工程と、
前記第1の絶縁層の上に第1の導電層を形成する工程と、
前記第1の導電層及び前記第1の絶縁層のゲート幅方向の両側面をエッチングする工程と、
前記第1の絶縁層のゲート幅方向の両側面及び、前記第1の導電層のゲート幅方向の両
側面の少なくとも一部を絶縁膜で埋め込んで、上面が前記第1の導電層の上面と底面との
間の高さに位置するように素子分離用の絶縁層を形成する工程と、
前記第1の導電層及び前記素子分離用の絶縁層の上に、
シリコン酸化膜である下層絶縁膜を形成する工程と、
前記下層絶縁膜の上に、プラズマ窒化法により炉内圧力50mTorr〜2Torrでシリコン酸化窒化膜である中間絶縁膜を形成する工程と、
前記中間絶縁膜の上に、シリコン酸化膜である上層絶縁膜を形成する工程と
からなる3層絶縁膜の形成を含んだ第2の絶縁層を形成する工程と、
前記第2の絶縁層の上に第2の導電層を形成する工程と
を含むことを特徴とする不揮発性半導体記憶装置の製造方法。 - 半導体基板の主表面に形成された第1の絶縁層と、
前記第1の絶縁層の上に形成された第1の導電層と、
前記第1の絶縁層のゲート幅方向の両側面及び、前記第1の導電層のゲート幅方向の両側面の少なくとも一部を埋め込んで、上面が前記第1の導電層の上面と底面との間の高さに位置するように形成された素子分離用の絶縁層と、
前記第1の導電層及び前記素子分離用の絶縁層の上に形成された第2の絶縁層であって、シリコン酸化膜である下層絶縁膜とシリコン酸窒化膜である中間絶縁膜とシリコン酸化膜である上層絶縁膜とからなる3層絶縁膜を含んだ第2の絶縁層と、
前記第2の絶縁層の上に形成された第2の導電層と
を具備した不揮発性半導体記憶装置であって、
前記第1の導電層の上に形成された前記中間絶縁膜における窒素原子濃度が、前記第1の導電層のゲート幅方向の前記両側面の上に形成された前記中間絶縁膜における窒素原子濃度よりも高い
ことを特徴とする不揮発性半導体記憶装置。 - 半導体基板の主表面に形成された第1の絶縁層と、
前記第1の絶縁層の上に形成された第1の導電層と、
前記第1の絶縁層のゲート幅方向の両側面及び、前記第1の導電層のゲート幅方向の両側面の少なくとも一部を埋め込んで、上面が前記第1の導電層の上面と底面との間の高さに位置するように形成された素子分離用の絶縁層と、
前記第1の導電層及び前記素子分離用の絶縁層の上に形成された第2の絶縁層であって、シリコン酸化膜である下層絶縁膜とシリコン酸窒化膜である中間絶縁膜とシリコン酸化膜である上層絶縁膜とからなる3層絶縁膜を含んだ第2の絶縁層と、
前記第2の絶縁層の上に形成された第2の導電層と
を具備した不揮発性半導体記憶装置であって、
前記第1の導電層の上に形成された前記中間絶縁膜における窒素原子濃度が、前記素子分離用の絶縁層の上に形成された前記中間絶縁膜における窒素原子濃度よりも高い
ことを特徴とする不揮発性半導体記憶装置。 - 半導体基板の主表面に形成された第1の絶縁層と、
前記第1の絶縁層の上に形成された第1の導電層と、
前記第1の絶縁層のゲート幅方向の両側面及び、前記第1の導電層のゲート幅方向の両側面の少なくとも一部を埋め込んで、上面が前記第1の導電層の上面と底面との間の高さに位置するように形成された素子分離用の絶縁層と、
前記第1の導電層及び前記素子分離用の絶縁層の上に形成された第2の絶縁層であって、シリコン酸化膜である下層絶縁膜とシリコン酸窒化膜である中間絶縁膜とシリコン酸化膜である上層絶縁膜とからなる3層絶縁膜を含んだ第2の絶縁層と、
前記第2の絶縁層の上に形成された第2の導電層と
を具備した不揮発性半導体記憶装置であって、
前記素子分離用の絶縁層の上に形成された前記中間絶縁膜における酸素原子濃度が、前記第1の導電層の上に形成された前記中間絶縁膜における酸素原子濃度よりも高い
ことを特徴とする不揮発性半導体記憶装置。
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JP2007015175A JP4855958B2 (ja) | 2007-01-25 | 2007-01-25 | 不揮発性半導体記憶装置及びその製造方法 |
KR1020080007636A KR100928372B1 (ko) | 2007-01-25 | 2008-01-24 | 불휘발성 반도체 기억 장치 및 그 제조 방법 |
US12/020,236 US20080179655A1 (en) | 2007-01-25 | 2008-01-25 | Nonvolatile semiconductor memory device having multi-layered oxide/(oxy) nitride film as inter-electrode insulating film and manufacturing method thereof |
US13/274,030 US20120034772A1 (en) | 2007-01-25 | 2011-10-14 | Nonvolatile Semiconductor Memory Device Having Multi-Layered Oxide/(OXY) Nitride Film as Inter-Electrode Insulating Film and Manufacturing Method Thereof |
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KR100945935B1 (ko) * | 2008-04-07 | 2010-03-05 | 주식회사 하이닉스반도체 | 불휘발성 메모리소자의 제조방법 |
JP5459999B2 (ja) | 2008-08-08 | 2014-04-02 | 株式会社東芝 | 不揮発性半導体記憶素子、不揮発性半導体装置及び不揮発性半導体素子の動作方法 |
JP5361328B2 (ja) | 2008-10-27 | 2013-12-04 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
US8664713B2 (en) | 2008-12-31 | 2014-03-04 | Stmicroelectronics S.R.L. | Integrated power device on a semiconductor substrate having an improved trench gate structure |
US8198671B2 (en) * | 2009-04-22 | 2012-06-12 | Applied Materials, Inc. | Modification of charge trap silicon nitride with oxygen plasma |
JP5566845B2 (ja) * | 2010-10-14 | 2014-08-06 | 株式会社東芝 | 半導体装置の製造方法 |
US8994089B2 (en) * | 2011-11-11 | 2015-03-31 | Applied Materials, Inc. | Interlayer polysilicon dielectric cap and method of forming thereof |
JP5620426B2 (ja) | 2012-03-19 | 2014-11-05 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
KR20140072434A (ko) * | 2012-12-04 | 2014-06-13 | 에스케이하이닉스 주식회사 | 반도체 메모리 소자 및 이의 제조방법 |
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US5780891A (en) * | 1994-12-05 | 1998-07-14 | Micron Technology, Inc. | Nonvolatile floating gate memory with improved interploy dielectric |
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JP5068402B2 (ja) * | 2000-12-28 | 2012-11-07 | 公益財団法人国際科学振興財団 | 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法 |
US20050212035A1 (en) * | 2002-08-30 | 2005-09-29 | Fujitsu Amd Semiconductor Limited | Semiconductor storage device and manufacturing method thereof |
US6893920B2 (en) * | 2002-09-12 | 2005-05-17 | Promos Technologies, Inc. | Method for forming a protective buffer layer for high temperature oxide processing |
JP5046464B2 (ja) * | 2002-12-18 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体記憶素子の作製方法 |
KR20040079172A (ko) * | 2003-03-06 | 2004-09-14 | 주식회사 하이닉스반도체 | 반도체 소자의 유전체막 형성 방법 |
JP3923926B2 (ja) * | 2003-07-04 | 2007-06-06 | 株式会社東芝 | 半導体記憶装置 |
JP4237561B2 (ja) * | 2003-07-04 | 2009-03-11 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
JP4734019B2 (ja) * | 2005-04-26 | 2011-07-27 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
JP4746468B2 (ja) * | 2006-04-14 | 2011-08-10 | 株式会社東芝 | 半導体装置 |
US7799637B2 (en) * | 2006-06-26 | 2010-09-21 | Sandisk Corporation | Scaled dielectric enabled by stack sidewall process |
-
2007
- 2007-01-25 JP JP2007015175A patent/JP4855958B2/ja not_active Expired - Fee Related
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2008
- 2008-01-24 KR KR1020080007636A patent/KR100928372B1/ko not_active IP Right Cessation
- 2008-01-25 US US12/020,236 patent/US20080179655A1/en not_active Abandoned
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2011
- 2011-10-14 US US13/274,030 patent/US20120034772A1/en not_active Abandoned
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JP2008182104A (ja) | 2008-08-07 |
US20080179655A1 (en) | 2008-07-31 |
KR100928372B1 (ko) | 2009-11-23 |
KR20080070561A (ko) | 2008-07-30 |
US20120034772A1 (en) | 2012-02-09 |
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