JP4462330B2 - Iii族窒化物電子デバイス - Google Patents
Iii族窒化物電子デバイス Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims description 106
- 239000000758 substrate Substances 0.000 claims description 124
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 70
- 229910052799 carbon Inorganic materials 0.000 claims description 70
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 55
- 229910002704 AlGaN Inorganic materials 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000010410 layer Substances 0.000 description 179
- 239000004065 semiconductor Substances 0.000 description 62
- 229910002601 GaN Inorganic materials 0.000 description 58
- 229910052710 silicon Inorganic materials 0.000 description 40
- 239000010703 silicon Substances 0.000 description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 39
- 239000000969 carrier Substances 0.000 description 14
- 230000007423 decrease Effects 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005264 electron capture Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 101100537098 Mus musculus Alyref gene Proteins 0.000 description 2
- 101150095908 apex1 gene Proteins 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 101100269674 Mus musculus Alyref2 gene Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Description
「窒化物半導体を用いた低消費電力型高周波デバイスの開発」プロジェクト 最終成果報告会予稿集 第84頁〜85頁、平面KFM法によるAlGaN/GaN HFETの電流コラプス解析 S. Sabuktagin et al. Appl. Phys. Lett. Vol. 75, 4016 (1999)
(実験例)
実験1:
有機金属気相成長(MOVPE)法を用いて、(0001)面のサファイア基板上に、以下のようにエピタキシャル基板を作製した。水素雰囲気にて摂氏1050度及び炉内圧力100torr(1Torrは、133.322パスカルで換算される)にて、5分間の炉内熱処理を行った。この後に、摂氏520度で低温GaNバッファ層(25nm)を成長した。次いで、摂氏1050度、炉内圧力100torr及びV/III=1000の条件で、2μmのノンドープGaN層を成長した。続いて、摂氏1070度、50torr及びV/III=500の条件でノンドープのAl0.25Ga0.75N層を成長した。これらの工程により、エピタキシャル基板A−1を作製した。TEM評価によるGaN層の転位密度は、2×109cm−2であった。
MOVPE法を用いて、6H−SiC基板上に、以下のようにエピタキシャル基板を作製した。水素雰囲気にて摂氏1050度及び炉内圧力100torrにて、5分間の炉内熱処理を行った。この後に、摂氏1080度でノンドープAl0.5Ga0.5Nバッファ層(100nm)を成長した。次いで、摂氏1050度、炉内圧力100torr及びV/III=1000の条件で、2μmのノンドープGaN層を成長した。続いて、摂氏1070度、50torr及びV/III=500の条件で、ノンドープの25nmのAl0.25Ga0.75N層を成長した。これらの工程により、エピタキシャル基板B−1を作製した。TEM評価によるGaN層の転位密度は、5×108cm−2であった。
MOVPE法を用いて、図3に示されるエピタキシャル基板31を以下のように作製した。高抵抗GaN基板33の表面に、アンモニア雰囲気にて摂氏1000度の温度で、5分間の炉内熱処理を行った。この後に、摂氏1050度、炉内圧力100torr及びV/III=1000の条件で、2μmのノンドープGaN層35を成長した。続いて、摂氏1070度、50torr及びV/III=500の条件で、ノンドープの25nmのAl0.25Ga0.75N層37を成長した。これらの工程により、エピタキシャル基板C−1、D−1を作製した。TEM評価により、エピタキシャル基板C−1のGaN層の転位密度は10×107cm−2であり、エピタキシャル基板D−1のGaN層の転位密度は10×106cm−2であった。
炭素濃度は3×1016cm−3以上であることが好ましい。それ以下の炭素濃度に下げることが難しいからである。炭素濃度は1×1019cm−3以下であることが好ましい。良好なエピタキシャル膜が得られなくなるためである。Si濃度は3×1016cm−3以上であることが好ましい。炭素濃度が3×1016cm−3以下にするのが困難だからである。Si濃度は1×1019cm−3以下であることが好ましい。あまりにSi濃度が高いとリーク電流が増大するからである。
31…エピタキシャル基板、33…高抵抗GaN基板、35…ノンドープGaN層、37…Al0.25Ga0.75N層、E1、E2、E3、E4…III族窒化物半導体エピタキシャル基板、NSi13…シリコン濃度
Claims (8)
- 第1のAlX1InX2Ga1−X1−X2N(0<X1<1、0≦X2<1、0<X1+X2<1)層と、
前記第1のAlX1InX2Ga1−X1−X2N層とヘテロ接合を成す第2のAlY1InY2Ga1−Y1−Y2N(0≦Y1<1、0≦Y2<1、0≦Y1+Y2<1)層と、
前記第1のAlX1InX2Ga1−X1−X2N層上に設けられた第1の電極と、
前記第1のAlX1InX2Ga1−X1−X2N層上に設けられた第2の電極と、
基板と
を備え、
前記第2のAlY1InY2Ga1−Y1−Y2N層は前記基板上に設けられ、
前記基板は、1×108cm−2以下の転位密度を有するGaN基板、1×108cm−2以下の転位密度を有するAlN基板、1×108cm−2以下の転位密度を有するAlGaN基板、1×108cm−2以下の転位密度を有するInGaN基板、及び1×108cm−2以下の転位密度を有するGaNテンプレートのいずれかであり、
前記第1のAlX1InX2Ga1−X1−X2N層のバンドギャップは前記第2のAlY1InY2Ga1−Y1−Y2N層のバンドギャップより大きく、
前記第1のAl X1 In X2 Ga 1−X1−X2 N層はノンドープであり、
前記第2のAl Y1 In Y2 Ga 1−Y1−Y2 N層はノンドープであり、
前記第1のAlX1InX2Ga1−X1−X2N層の炭素濃度は1×1017cm−3未満であり、
前記炭素濃度を有する前記第1のAl X1 In X2 Ga 1−X1−X2 N層が前記第2のAl Y1 In Y2 Ga 1−Y1−Y2 N層上に成長されて、前記第1のAl X1 In X2 Ga 1−X1−X2 N層が前記第2のAl Y1 In Y2 Ga 1−Y1−Y2 N層上にあり、
前記第2のAlY1InY2Ga1−Y1−Y2N層の転位密度が1×108cm−2未満であり、
前記第1の電極は、前記第1のAlX1InX2Ga1−X1−X2N層にショットキ接合を成す、ことを特徴とするIII族窒化物電子デバイス。 - 前記第1の電極と前記第2の電極との間に100ボルトの逆バイアスを印加したときのリーク電流密度は1×10−7A/cm2以下である、ことを特徴とする請求項1に記載されたIII族窒化物電子デバイス。
- 前記第1のAlX1InX2Ga1−X1−X2N層はAlGaNバリア層であり、
当該III族窒化物電子デバイスはヘテロ接合トランジスタであり、
前記第1の電極は前記ヘテロ接合トランジスタのゲート電極であり、
前記第2の電極は前記ヘテロ接合トランジスタのドレイン電極であり、
当該III族窒化物電子デバイスは、前記第1のAlX1InX2Ga1−X1−X2N層上に設けられたソース電極を更に備える、ことを特徴とする請求項1または請求項2に記載されたIII族窒化物電子デバイス。 - 前記第2のAlY1InY2Ga1−Y1−Y2N層はGaNからなる、ことを特徴と
する請求項3に記載されたIII族窒化物電子デバイス。 - 前記第1のAlX1InX2Ga1−X1−X2N層はAlGaN層であり、
当該III族窒化物電子デバイスはショットキバリアダイオードであり、
前記第1の電極は前記ショットキバリアダイオードのアノード電極であり、
前記第2の電極は前記ショットキバリアダイオードのカソード電極である、ことを特徴とする請求項1または請求項2に記載されたIII族窒化物電子デバイス。 - 前記基板は前記GaN基板である、ことを特徴とする請求項1〜請求項5のいずれか一項に記載されたIII族窒化物電子デバイス。
- 前記GaN基板は半絶縁性を有する、ことを特徴とする請求項6に記載されたIII族窒化物電子デバイス。
- 前記基板は前記GaNテンプレートであり、
前記第2のAlY1InY2Ga1−Y1−Y2N層は前記GaNテンプレート上に設けられており、
前記第1のAlX1InX2Ga1−X1−X2N層は前記第2のAlY1InY2Ga1−Y1−Y2N層上に設けられている、ことを特徴とする請求項1〜請求項5のいずれか一項に記載されたIII族窒化物電子デバイス。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2007286534A JP4462330B2 (ja) | 2007-11-02 | 2007-11-02 | Iii族窒化物電子デバイス |
US12/740,770 US8541816B2 (en) | 2007-11-02 | 2008-10-28 | III nitride electronic device and III nitride semiconductor epitaxial substrate |
KR1020107008135A KR20100074187A (ko) | 2007-11-02 | 2008-10-28 | Iii족 질화물 전자 디바이스 및 iii족 질화물 반도체 에피택셜 기판 |
PCT/JP2008/069564 WO2009057601A1 (ja) | 2007-11-02 | 2008-10-28 | Iii族窒化物電子デバイス及びiii族窒化物半導体エピタキシャル基板 |
CN2008801142642A CN101842884B (zh) | 2007-11-02 | 2008-10-28 | Ⅲ族氮化物电子器件及ⅲ族氮化物半导体外延衬底 |
EP08845789A EP2211376A4 (en) | 2007-11-02 | 2008-10-28 | III NITRIDE ELECTRONIC ELEMENT AND III NITRIDE SEMICONDUCTOR PITAXIAL SUBSTRATE |
TW097142286A TW200937634A (en) | 2007-11-02 | 2008-10-31 | Group iii nitride electronic device and group iii nitride semiconductor epitaxial substrate |
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EP (1) | EP2211376A4 (ja) |
JP (1) | JP4462330B2 (ja) |
KR (1) | KR20100074187A (ja) |
CN (1) | CN101842884B (ja) |
TW (1) | TW200937634A (ja) |
WO (1) | WO2009057601A1 (ja) |
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JP2010045416A (ja) * | 2009-11-25 | 2010-02-25 | Sumitomo Electric Ind Ltd | Iii族窒化物電子デバイス |
US8541816B2 (en) | 2007-11-02 | 2013-09-24 | Sumitomo Electric Industries, Ltd. | III nitride electronic device and III nitride semiconductor epitaxial substrate |
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JP2011035066A (ja) * | 2009-07-30 | 2011-02-17 | Sumitomo Electric Ind Ltd | 窒化物半導体素子、及び窒化物半導体素子を作製する方法 |
JP2012033575A (ja) * | 2010-07-28 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置 |
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KR101933230B1 (ko) * | 2012-08-10 | 2018-12-27 | 엔지케이 인슐레이터 엘티디 | 반도체 소자, hemt 소자, 및 반도체 소자의 제조 방법 |
EP2888390A1 (en) * | 2012-08-24 | 2015-07-01 | Sixpoint Materials Inc. | A bismuth-doped semi-insulating group iii nitride wafer and its production method |
JP5787417B2 (ja) | 2013-05-14 | 2015-09-30 | コバレントマテリアル株式会社 | 窒化物半導体基板 |
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JP6305137B2 (ja) * | 2014-03-18 | 2018-04-04 | 住友化学株式会社 | 窒化物半導体積層物および半導体装置 |
JP6249868B2 (ja) * | 2014-04-18 | 2017-12-20 | サンケン電気株式会社 | 半導体基板及び半導体素子 |
US9419125B1 (en) | 2015-06-16 | 2016-08-16 | Raytheon Company | Doped barrier layers in epitaxial group III nitrides |
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JP2001015437A (ja) | 1999-06-29 | 2001-01-19 | Nec Corp | Iii族窒化物結晶成長法 |
US6787814B2 (en) * | 2000-06-22 | 2004-09-07 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device and production method thereof |
JP4554803B2 (ja) * | 2000-12-04 | 2010-09-29 | 独立行政法人理化学研究所 | 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子 |
WO2003063215A1 (fr) | 2002-01-21 | 2003-07-31 | Matsushita Electric Industrial Co., Ltd. | Procede de fabrication d'un dispositif a semi-conducteurs a base de nitrures |
JP2003282929A (ja) | 2002-03-22 | 2003-10-03 | Osaka Gas Co Ltd | 受光素子の作製方法 |
JP4179539B2 (ja) | 2003-01-15 | 2008-11-12 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
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JP2006295126A (ja) * | 2005-03-15 | 2006-10-26 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体素子およびエピタキシャル基板 |
JP2006261474A (ja) | 2005-03-18 | 2006-09-28 | Furukawa Electric Co Ltd:The | 窒化物系半導体デバイス |
JP4895520B2 (ja) | 2005-03-28 | 2012-03-14 | 日本電信電話株式会社 | ショットキーダイオードおよびその製造方法 |
JP4792814B2 (ja) * | 2005-05-26 | 2011-10-12 | 住友電気工業株式会社 | 高電子移動度トランジスタ、電界効果トランジスタ、エピタキシャル基板、エピタキシャル基板を作製する方法およびiii族窒化物系トランジスタを作製する方法 |
WO2007007589A1 (ja) | 2005-07-08 | 2007-01-18 | Nec Corporation | 電界効果トランジスタおよびその製造方法 |
JP2007027276A (ja) * | 2005-07-13 | 2007-02-01 | Oki Electric Ind Co Ltd | 半導体素子の製造方法及び半導体素子 |
US20070018198A1 (en) | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
WO2007013257A1 (ja) | 2005-07-29 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | 窒化物系半導体素子 |
JP4462330B2 (ja) | 2007-11-02 | 2010-05-12 | 住友電気工業株式会社 | Iii族窒化物電子デバイス |
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- 2008-10-28 US US12/740,770 patent/US8541816B2/en active Active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8541816B2 (en) | 2007-11-02 | 2013-09-24 | Sumitomo Electric Industries, Ltd. | III nitride electronic device and III nitride semiconductor epitaxial substrate |
JP2010045416A (ja) * | 2009-11-25 | 2010-02-25 | Sumitomo Electric Ind Ltd | Iii族窒化物電子デバイス |
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JP2009117482A (ja) | 2009-05-28 |
KR20100074187A (ko) | 2010-07-01 |
WO2009057601A1 (ja) | 2009-05-07 |
EP2211376A1 (en) | 2010-07-28 |
US20100230687A1 (en) | 2010-09-16 |
EP2211376A4 (en) | 2012-04-04 |
CN101842884A (zh) | 2010-09-22 |
US8541816B2 (en) | 2013-09-24 |
TW200937634A (en) | 2009-09-01 |
CN101842884B (zh) | 2012-05-16 |
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