JP4428354B2 - 圧電薄膜共振子 - Google Patents
圧電薄膜共振子 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 69
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000003780 insertion Methods 0.000 description 6
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- 229910052710 silicon Inorganic materials 0.000 description 6
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- 230000000694 effects Effects 0.000 description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 5
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 5
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- 238000004544 sputter deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
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- 238000000206 photolithography Methods 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
基板と、
前記基板の上方に形成された共振部であって、第1電極層と、圧電体層と、第2電極層とを有し、前記第1電極層と前記第2電極層とによって前記圧電体層に電界を与えることにより、前記圧電体層の厚み方向に音響振動が生成される共振部と、
を含み、
前記共振部の平面形状において、少なくとも一組の辺は平行をなし、かつ、平行をなす組の辺の間隔において最短の間隔は、少なくとも前記共振部の厚み以下である。
また、ある実施形態では、基板と、前記基板の上方に配置された第1電極層と、前記第1電極層の上に配置された圧電体層と、前記圧電体層の上に配置された第2電極層と、を含み、前記基板の表面に垂直な方向から見て、前記第2電極層は第1の辺及び前記第1の辺に平行に対向する第2の辺を有し、前記第1の辺の少なくとも一部と前記第2の辺の少なくとも一部の間隔は、前記第1電極層の前記基板の側の面と前記第2電極層の上面との間の距離以下である。
また、ある実施形態では、前記基板の表面に垂直な方向から見て、前記第1の辺と前記圧電体層の第1の端部が略一致し、前記第2の辺と前記圧電体層の第2の端部が略一致している。
また、ある実施形態では、前記基板の表面に垂直な方向から見て、前記第1の辺と前記第1電極層の第1の端部が略一致し、前記第2の辺と前記第1電極層の第2の端部が略一致している。
図1は、本実施形態の圧電薄膜共振子100の構造を模式的に示す断面図であり、図2は、図1に示す圧電薄膜共振子100を水平方向に90度回転した状態で模式的に示す断面図である。
図4は、本実施形態の圧電薄膜共振子200の構造を模式的に示す断面図である。図1および図2に示す、第1実施形態の圧電薄膜共振子100と実質的に同じ部材には同一の符号を付し、その詳細な説明を省略する。第2実施形態の圧電薄膜共振子200は、第1実施形態の圧電薄膜共振子100と、自由振動領域を構成する開口部の構造が異なる。
図6は、本実施形態の圧電薄膜共振子300の構造を模式的に示す断面図である。図1および図2に示す、第1実施形態の圧電薄膜共振子100と実質的に同じ部材には同一の符号を付し、その詳細な説明を省略する。第3実施形態の圧電薄膜共振子300は、第1実施形態の圧電薄膜共振子100と自由振動領域を構成する領域の構造が異なり、SMR型素子である。
Claims (10)
- 基板と、
前記基板の上方に形成された共振部であって、第1電極層と、圧電体層と、第2電極層とを有し、前記第1電極層と前記第2電極層とによって前記圧電体層に電界を与えることにより、前記圧電体層の厚み方向に音響振動が生成される共振部と、
を含み、
前記共振部の平面形状において、少なくとも一組の辺は平行をなし、かつ、平行をなす組の辺の間隔において最短の間隔は、少なくとも前記共振部の厚み以下である、圧電薄膜共振子。 - 請求項1において、
前記最短の間隔は、前記圧電体層の厚み以下である、圧電薄膜共振子。 - 請求項1または2において、
前記共振部の平面形状は、一組の短辺と、一組の長辺とを有する四辺形である、圧電薄膜共振子。 - 請求項3において、
前記一組の短辺は互いに平行でない、圧電薄膜共振子。 - 請求項4において、
前記共振部の平面形状は、2回回転軸あるいは鏡映面をもたない、圧電薄膜共振子。 - 請求項1ないし5のいずれかにおいて、
前記共振部は、前記基板に形成された開口部からなる自由振動領域内に平面的に収まるように配置される、圧電薄膜共振子。 - 請求項1ないし5のいずれかにおいて、
さらに、前記基板の上方に形成された音響多層膜を有し、
前記共振部は、前記音響多層膜の上方に形成され、かつ、該音響多層膜の領域内に平面的に収まるように配置される、圧電薄膜共振子。 - 基板と、
前記基板の上方に配置された第1電極層と、
前記第1電極層の上に配置された圧電体層と、
前記圧電体層の上に配置された第2電極層と、
を含み、
前記基板の表面に垂直な方向から見て、前記第2電極層は第1の辺及び前記第1の辺に平行に対向する第2の辺を有し、
前記第1の辺の少なくとも一部と前記第2の辺の少なくとも一部の間隔は、前記第1電極層の前記基板の側の面と前記第2電極層の上面との間の距離以下である、圧電薄膜共振子。 - 請求項8において、
前記基板の表面に垂直な方向から見て、前記第1の辺と前記圧電体層の第1の端部が略一致し、前記第2の辺と前記圧電体層の第2の端部が略一致している、圧電薄膜共振子。 - 請求項9において、
前記基板の表面に垂直な方向から見て、前記第1の辺と前記第1電極層の第1の端部が略一致し、前記第2の辺と前記第1電極層の第2の端部が略一致している、圧電薄膜共振子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006090253A JP4428354B2 (ja) | 2006-03-29 | 2006-03-29 | 圧電薄膜共振子 |
US11/692,294 US20070228880A1 (en) | 2006-03-29 | 2007-03-28 | Piezoelectric thin film resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006090253A JP4428354B2 (ja) | 2006-03-29 | 2006-03-29 | 圧電薄膜共振子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007267108A JP2007267108A (ja) | 2007-10-11 |
JP4428354B2 true JP4428354B2 (ja) | 2010-03-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006090253A Expired - Fee Related JP4428354B2 (ja) | 2006-03-29 | 2006-03-29 | 圧電薄膜共振子 |
Country Status (2)
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US (1) | US20070228880A1 (ja) |
JP (1) | JP4428354B2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2255965A1 (en) * | 2008-03-26 | 2010-12-01 | NGK Insulators, Ltd. | Droplet ejecting device and method for manufacturing droplet ejecting device |
JPWO2010101026A1 (ja) * | 2009-03-06 | 2012-09-06 | 株式会社日立製作所 | 薄膜圧電弾性波共振器及び高周波フィルタ |
WO2016002971A1 (ja) * | 2014-07-04 | 2016-01-07 | セイコーエプソン株式会社 | 超音波センサー |
US10361677B2 (en) * | 2016-02-18 | 2019-07-23 | X-Celeprint Limited | Transverse bulk acoustic wave filter |
US10200013B2 (en) | 2016-02-18 | 2019-02-05 | X-Celeprint Limited | Micro-transfer-printed acoustic wave filter device |
US10594298B2 (en) * | 2017-06-19 | 2020-03-17 | Rfhic Corporation | Bulk acoustic wave filter |
US10804880B2 (en) | 2018-12-03 | 2020-10-13 | X-Celeprint Limited | Device structures with acoustic wave transducers and connection posts |
US10790173B2 (en) | 2018-12-03 | 2020-09-29 | X Display Company Technology Limited | Printed components on substrate posts |
US11528808B2 (en) | 2018-12-03 | 2022-12-13 | X Display Company Technology Limited | Printing components to substrate posts |
US11274035B2 (en) | 2019-04-24 | 2022-03-15 | X-Celeprint Limited | Overhanging device structures and related methods of manufacture |
US11482979B2 (en) | 2018-12-03 | 2022-10-25 | X Display Company Technology Limited | Printing components over substrate post edges |
US20210002128A1 (en) | 2018-12-03 | 2021-01-07 | X-Celeprint Limited | Enclosed cavity structures |
EP4027514A4 (en) * | 2019-09-05 | 2023-10-25 | Changzhou Chemsemi Co., Ltd. | DEVICE FOR ACOUSTIC VOLUME WAVE RESONANCE AND ACOUSTIC VOLUME WAVE FILTER |
CN111262542B (zh) * | 2020-02-27 | 2022-03-25 | 见闻录(浙江)半导体有限公司 | 一种具有散热结构的体声波谐振器及制造工艺 |
CN112697262B (zh) * | 2020-12-08 | 2023-06-27 | 联合微电子中心有限责任公司 | 水听器及其制造方法 |
TWI809455B (zh) * | 2021-07-20 | 2023-07-21 | 大陸商茂丞(鄭州)超聲科技有限公司 | 懸浮式壓電超音波感測器及其製作方法 |
CN114050800A (zh) * | 2021-11-10 | 2022-02-15 | 浙江水利水电学院 | 一种快速形成微声薄膜谐振器空腔结构的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US3789277A (en) * | 1973-01-29 | 1974-01-29 | Sprague Electric Co | Wound capacitor |
US5873154A (en) * | 1996-10-17 | 1999-02-23 | Nokia Mobile Phones Limited | Method for fabricating a resonator having an acoustic mirror |
US6081171A (en) * | 1998-04-08 | 2000-06-27 | Nokia Mobile Phones Limited | Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response |
KR100398363B1 (ko) * | 2000-12-05 | 2003-09-19 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
US6424237B1 (en) * | 2000-12-21 | 2002-07-23 | Agilent Technologies, Inc. | Bulk acoustic resonator perimeter reflection system |
JP2005236337A (ja) * | 2001-05-11 | 2005-09-02 | Ube Ind Ltd | 薄膜音響共振器及びその製造方法 |
-
2006
- 2006-03-29 JP JP2006090253A patent/JP4428354B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-28 US US11/692,294 patent/US20070228880A1/en not_active Abandoned
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US20070228880A1 (en) | 2007-10-04 |
JP2007267108A (ja) | 2007-10-11 |
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