JP4311419B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP4311419B2 JP4311419B2 JP2006211244A JP2006211244A JP4311419B2 JP 4311419 B2 JP4311419 B2 JP 4311419B2 JP 2006211244 A JP2006211244 A JP 2006211244A JP 2006211244 A JP2006211244 A JP 2006211244A JP 4311419 B2 JP4311419 B2 JP 4311419B2
- Authority
- JP
- Japan
- Prior art keywords
- pixel
- dark current
- floating diffusion
- aperture
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 50
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
ィフュージョン部の表面積を異ならすことで、両画素の暗電流の和を一致さ
せることができる。
本実施の形態の固体撮像装置31の信号読み出しは、前述の従来例で説明したと同様であるので、重複説明を省略する。
よって、本実施の形態では、F1をF2よりも小さくすることで、F1+P1=F2+P2が達成されることになる。
よって、第2実施の形態によれば、図3のレイアウトのように暗電流量がF1+P1=F2+P2となるように、開口画素36及び、OB画素38のフローティング・ディフュージョン部44,54の周辺長及び表面積を適当に調節することにより、暗電流量を調整することができる。
このとき、P1=0であるから、暗電流量は、F1=F2+P2となるように調整され
る。
Claims (2)
- 光電変換部とフローティング・ディフュージョン部を有して構成される有効画素及び黒基準画素が、それぞれ複数配列された撮像領域を有し、
前記有効画素の暗電流量と、前記黒基準画素の暗電流量とが一致するように、前記有効画素の光電変換部及び前記黒基準画素の光電変換部を同一形状で構成し、前記有効画素のフローティング・ディフュージョン部と、前記黒基準画素のフローティング・ディフュージョン部の表面積がそれぞれ異なるように構成されたことを特徴とする固体撮像装置。 - 請求項1において、前記黒基準画素は、光電変換部の電荷をフローティング・ディフュージョン部へ転送しないように構成されることを特徴とする固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006211244A JP4311419B2 (ja) | 2006-08-02 | 2006-08-02 | 固体撮像装置 |
US11/825,579 US8519502B2 (en) | 2006-08-02 | 2007-07-06 | Solid-state imaging device |
KR1020070075383A KR101415130B1 (ko) | 2006-08-02 | 2007-07-27 | 고체 촬상 디바이스 |
US13/956,054 US10840277B2 (en) | 2006-08-02 | 2013-07-31 | Solid state imaging device having variation in optical black pixel structures relative to image generating pixel structures to provide substantially equivalent dark current |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006211244A JP4311419B2 (ja) | 2006-08-02 | 2006-08-02 | 固体撮像装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009070633A Division JP5088341B2 (ja) | 2009-03-23 | 2009-03-23 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008041776A JP2008041776A (ja) | 2008-02-21 |
JP4311419B2 true JP4311419B2 (ja) | 2009-08-12 |
Family
ID=39028322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006211244A Expired - Fee Related JP4311419B2 (ja) | 2006-08-02 | 2006-08-02 | 固体撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8519502B2 (ja) |
JP (1) | JP4311419B2 (ja) |
KR (1) | KR101415130B1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100881200B1 (ko) * | 2007-07-30 | 2009-02-05 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP2012191005A (ja) * | 2011-03-10 | 2012-10-04 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法および撮像装置 |
JP5959834B2 (ja) | 2011-12-02 | 2016-08-02 | キヤノン株式会社 | 撮像装置 |
JP6116878B2 (ja) * | 2012-12-03 | 2017-04-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6190392B2 (ja) * | 2013-01-16 | 2017-08-30 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および電子機器 |
KR102367384B1 (ko) | 2015-01-13 | 2022-02-25 | 삼성전자주식회사 | 이미지 센서 및 그 형성 방법 |
EP3398182A1 (en) * | 2015-12-31 | 2018-11-07 | Robert Bosch GmbH | Intelligent distributed vision traffic marker and method thereof |
JP2019126013A (ja) * | 2018-01-19 | 2019-07-25 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
CN109273473A (zh) * | 2018-09-25 | 2019-01-25 | 德淮半导体有限公司 | 图像传感器及其制造方法以及电子装置 |
EP3919932A4 (en) * | 2019-01-30 | 2022-03-23 | Sony Semiconductor Solutions Corporation | LIGHT RECEIVING DEVICE AND TELEMETRY SYSTEM |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065721B2 (ja) | 1985-11-19 | 1994-01-19 | 三洋電機株式会社 | 固体撮像素子 |
KR100205314B1 (ko) | 1996-09-17 | 1999-07-01 | 구본준 | 고체 촬상 소자 |
JP4284752B2 (ja) * | 1999-05-31 | 2009-06-24 | ソニー株式会社 | 固体撮像素子 |
JP3870137B2 (ja) | 2001-08-02 | 2007-01-17 | キヤノン株式会社 | 固体撮像装置及び固体撮像システム |
JP4517638B2 (ja) | 2003-12-12 | 2010-08-04 | ソニー株式会社 | 固体撮像装置、画像入力装置、および、固体撮像装置のノイズ除去方法 |
JP3977342B2 (ja) | 2004-02-05 | 2007-09-19 | キヤノン株式会社 | 固体撮像装置の設計方法及び撮像システム |
KR100539253B1 (ko) * | 2004-03-10 | 2005-12-27 | 삼성전자주식회사 | 폴리실리콘 콘택 스터드를 갖는 cmos 이미지 디바이스 |
JP4449565B2 (ja) * | 2004-05-12 | 2010-04-14 | ソニー株式会社 | 物理量分布検知の半導体装置 |
JP2006147816A (ja) | 2004-11-19 | 2006-06-08 | Sony Corp | 物理量分布検知装置および物理情報取得装置 |
-
2006
- 2006-08-02 JP JP2006211244A patent/JP4311419B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-06 US US11/825,579 patent/US8519502B2/en active Active
- 2007-07-27 KR KR1020070075383A patent/KR101415130B1/ko active IP Right Grant
-
2013
- 2013-07-31 US US13/956,054 patent/US10840277B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8519502B2 (en) | 2013-08-27 |
US20130313673A1 (en) | 2013-11-28 |
KR101415130B1 (ko) | 2014-07-04 |
KR20080012166A (ko) | 2008-02-11 |
US10840277B2 (en) | 2020-11-17 |
US20080029837A1 (en) | 2008-02-07 |
JP2008041776A (ja) | 2008-02-21 |
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