JP4286777B2 - ナノ粉末量産用高周波誘導プラズマ反応炉 - Google Patents
ナノ粉末量産用高周波誘導プラズマ反応炉 Download PDFInfo
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- JP4286777B2 JP4286777B2 JP2004505259A JP2004505259A JP4286777B2 JP 4286777 B2 JP4286777 B2 JP 4286777B2 JP 2004505259 A JP2004505259 A JP 2004505259A JP 2004505259 A JP2004505259 A JP 2004505259A JP 4286777 B2 JP4286777 B2 JP 4286777B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
Claims (4)
- 内側に垂直の反応炉(111)を有する第1冷却管(11)と、この第1冷却管(11)の外側を包む高周波コイル(12),及び前記反応炉(111)の内側壁の内側に具備され、外部からアルゴンガスが供給されて内部に投入され得るように、多数のガス通過ホール(132)が穿孔され、前記第1冷却管(11)との間にガス移動通路(131)の具備されたセラミック内壁(13)とを含む胴体(1)と;
前記反応炉(111)の上部に密閉装着され、反応炉(111)と貫通する粉末注入管(21)を含む上部カバー(2)と、
前記胴体(1)の下部には、前記反応炉(111)と連通され、反応炉(111)の直径より相対的に大きい直径の反応炉(311)の具備された第1冷却管(31)と、この第1冷却管(31)の外側を包み、前記高周波コイル(12)より相対的に容量の大きい高周波コイル(32),及び前記反応炉(311)の内側壁の内側に具備され、外部からアルゴンガスが供給されて内部に投入され得るように、多数のガス通過ホール(332)が穿孔され、前記第1冷却管(31)との間にガス移動通路(331)の具備されたセラミック内壁(33)とを含む下部胴体(3)とから成るのだが、
前記高周波コイル(12、32)の外側の周りには、プラズマが反応炉(111)の側壁に吸着されないように、反応炉(111、311)内のプラズマを圧縮する、内側端の極性が同一な多数の永久磁石(141、341)が固定手段を介して一定間隔に組み合わされた永久磁石体(14、34)が具備され、
前記胴体(1)と下部胴体(3)の外側の周りには、高周波コイル(12、32)と第1冷却管(11、31)とを保護することができるように、多数の絶縁棒(5)が装着され、
前記上部カバー(2)に具備された粉末注入管(21)の噴出口の周りには、外部からアルゴンガスが流入されるガス流入口(211)が具備されており、上部カバー(2)の下面のすぐ内側には、外部から冷却水が流入され、下面を冷却する第2冷却管(212)が具備されることを特徴とするナノ粉末量産用プラズマ反応炉。 - 前記第1冷却管(11、31)は、外部から水が満たされて循環され、セラミック内側壁(112,312)及びセラミック外側壁(113、313)を含むことを特徴とする特許請求の範囲第1項に記載のナノ粉末量産用プラズマ反応炉。
- 前記セラミック内壁(13、33)に形成されたガス通過ホール(132、332)は、投入されるガスが反応炉の内部で螺旋形の渦流を起こせるように、入口に対して噴出口が下方及び一側方に傾斜づいて貫通形成されることを特徴とする特許請求の範囲第1項に記載のナノ粉末量産用プラズマ反応炉。
- 前記胴体(1)と下部胴体(3)との連結部の間には、各胴体の熱が伝導されるのを遮断する絶縁体(4)が追加で具備されることを特徴とする特許請求の範囲第1項に記載のナノ粉末量産用プラズマ反応炉。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0027253A KR100483886B1 (ko) | 2002-05-17 | 2002-05-17 | 나노분말 양산용 고주파 유도 플라즈마 반응로 |
PCT/KR2003/000375 WO2003097521A1 (en) | 2002-05-17 | 2003-02-25 | Inductively coupled plasma reactor for producing nano-powder |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005529727A JP2005529727A (ja) | 2005-10-06 |
JP4286777B2 true JP4286777B2 (ja) | 2009-07-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004505259A Expired - Fee Related JP4286777B2 (ja) | 2002-05-17 | 2003-02-25 | ナノ粉末量産用高周波誘導プラズマ反応炉 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7323655B2 (ja) |
JP (1) | JP4286777B2 (ja) |
KR (1) | KR100483886B1 (ja) |
CN (1) | CN100439237C (ja) |
AU (1) | AU2003208629A1 (ja) |
WO (1) | WO2003097521A1 (ja) |
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- 2002-05-17 KR KR10-2002-0027253A patent/KR100483886B1/ko not_active IP Right Cessation
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- 2003-02-25 JP JP2004505259A patent/JP4286777B2/ja not_active Expired - Fee Related
- 2003-02-25 AU AU2003208629A patent/AU2003208629A1/en not_active Abandoned
- 2003-02-25 US US10/514,692 patent/US7323655B2/en not_active Expired - Fee Related
- 2003-02-25 CN CNB038112906A patent/CN100439237C/zh not_active Expired - Fee Related
- 2003-02-25 WO PCT/KR2003/000375 patent/WO2003097521A1/en active Application Filing
Also Published As
Publication number | Publication date |
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WO2003097521A1 (en) | 2003-11-27 |
CN1652996A (zh) | 2005-08-10 |
KR20030089170A (ko) | 2003-11-21 |
US7323655B2 (en) | 2008-01-29 |
KR100483886B1 (ko) | 2005-04-20 |
CN100439237C (zh) | 2008-12-03 |
US20050258766A1 (en) | 2005-11-24 |
AU2003208629A1 (en) | 2003-12-02 |
JP2005529727A (ja) | 2005-10-06 |
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