JP4275583B2 - 電子モジュール - Google Patents
電子モジュール Download PDFInfo
- Publication number
- JP4275583B2 JP4275583B2 JP2004187112A JP2004187112A JP4275583B2 JP 4275583 B2 JP4275583 B2 JP 4275583B2 JP 2004187112 A JP2004187112 A JP 2004187112A JP 2004187112 A JP2004187112 A JP 2004187112A JP 4275583 B2 JP4275583 B2 JP 4275583B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- electronic module
- transmission line
- circuit
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 75
- 230000005540 biological transmission Effects 0.000 claims description 63
- 230000003287 optical effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 11
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
12 EAMドライバ 13、14 電源端子
15 信号端子 16 背面パッド
22a LD 22b EAM変調器
40 昇圧回路 42 電流源回路
44 直流電源 60 伝送線路
61 信号導体 62 基準導体
63、64 導体 66 接地電位層
70 プリント基板 70a、70b、70c 誘電体層
72、73 ビア配線 80 プリント基板
81 信号導体 82、83 基準導体
85 直接変調LDドライバ 86 直接変調LD
87 LNドライバ 88 CW−LD駆動回路
89 CW−LD 90 光ファイバ
91 LN変調器 92 光ファイバ
Claims (13)
- 正又は負のどちらか一方の電位である第1電位に基づいて駆動信号を生成する前段回路と、
前記第1電位と同じ電位である第2電位に対して前記駆動信号との間で逆バイアス方向に駆動される第1素子、及び第2電位に向けて順バイアス方向に接続される第2素子を有する後段回路と、
前記前段回路の駆動信号を前記第1素子に伝送する信号導体及び基準電位に維持される基準導体を備える伝送線路と、
を備え、前記前段回路の第1電位と前記伝送線路の基準導体との間及び前記後段回路の第2電位と前記伝送線路の基準導体との間が同電位で接続されてなることを特徴とする電子モジュール。 - 前記前段回路及び前記後段回路は、第1電位と同じ極性の電源によって駆動されることを特徴とする請求項1記載の電子モジュール。
- 前記第2電位は前記後段回路の電源電圧であり、前記後段回路は、電源電圧を昇圧する昇圧回路を更に備え、前記第2素子は前記第2電位に対して前記昇圧回路の出力との間で順方向にバイアスされることを特徴とする請求項1記載の電子モジュール。
- 前記伝送線路は、マイクロストリップ線路、コプレーナ線路または同軸線路の何れかであることを特徴とする請求項1記載の電子モジュール。
- 前記伝送線路は接地電位層を有するプリント基板に設けられたマイクロストリップ線路であり、前記マイクロストリップ線路の信号導体と基準導体、及び前記プリント基板の接地電位層がこの順で積層されてなることを特徴とする請求項4記載の電子モジュール。
- 前記伝送線路はプリント基板に設けられたコプレーナ線路であり、前記コプレーナ線路の信号導体はその両側に基準導体が配置されてなることを特徴とする請求項4記載の電子モジュール。
- 前記第1素子は光変調器であり、前記第2素子は発光素子または光アンプであることを特徴とする請求項1記載の電子モジュール。
- 前記第1素子と第2素子とが、同じ導電型の半導体基板上に集積されてなることを特徴とする請求項7記載の電子モジュール。
- 前記光変調器は電界吸収型光変調器であることを特徴とする請求項7または8記載の電子モジュール。
- 前記光変調器はLN変調器であることを特徴とする請求項7記載の電子モジュール。
- 正又は負のどちらか一方の電位である第1電位に基づいて駆動信号を生成する前段回路と、
前記第1電位と同じ電位である第2電位に対して前記駆動信号との間で順バイアス方向に駆動される第1素子を有する後段回路と、
前記前段回路の駆動信号を前記第1素子に伝送する信号導体及び基準電位に維持される基準導体を備える伝送線路と、
を備え、前記前段回路の第1電位と前記伝送線路の基準導体との間及び前記後段回路の第2電位と前記伝送線路の基準導体との間が同電位で接続されてなることを特徴とする電子モジュール。 - 前記第1素子は発光素子または光アンプであることを特徴とする請求項11記載の電子モジュール。
- 前記第1電位は、正の電位であることを特徴とする請求項1または11記載の電子モジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004187112A JP4275583B2 (ja) | 2004-06-24 | 2004-06-24 | 電子モジュール |
US11/159,122 US20060028704A1 (en) | 2004-06-24 | 2005-06-23 | Electronic module |
CNB2005100791259A CN100373718C (zh) | 2004-06-24 | 2005-06-24 | 电子组件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004187112A JP4275583B2 (ja) | 2004-06-24 | 2004-06-24 | 電子モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006013083A JP2006013083A (ja) | 2006-01-12 |
JP4275583B2 true JP4275583B2 (ja) | 2009-06-10 |
Family
ID=35718963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004187112A Expired - Lifetime JP4275583B2 (ja) | 2004-06-24 | 2004-06-24 | 電子モジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060028704A1 (ja) |
JP (1) | JP4275583B2 (ja) |
CN (1) | CN100373718C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8027606B2 (en) | 2006-07-19 | 2011-09-27 | Brother Kogyo Kabushiki Kaisha | Image forming apparatus with condition setting for manual duplex mode |
Families Citing this family (8)
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US7900066B2 (en) * | 2005-04-13 | 2011-03-01 | Renesas Electronics Corporation | Electronic device |
JP2007264313A (ja) * | 2006-03-28 | 2007-10-11 | Nec Corp | 電界吸収型光変調器、半導体レーザ、トランシーバ、駆動方法、プログラム、記録媒体 |
JP4784542B2 (ja) * | 2007-03-30 | 2011-10-05 | 日本電気株式会社 | プリエンファシス自動調整システム及びその調整方法並びにエンファシス設定信号発生回路 |
JP5313730B2 (ja) * | 2009-03-16 | 2013-10-09 | 日本オクラロ株式会社 | 光送信機及び光送信モジュール |
JP5682322B2 (ja) * | 2011-01-18 | 2015-03-11 | 住友電気工業株式会社 | 光送信回路 |
WO2015116187A1 (en) * | 2014-01-31 | 2015-08-06 | Hewlett-Packard Development Company, L.P. | Return path capacitor for connected devices |
CN105717590B (zh) * | 2016-04-28 | 2018-01-23 | 四川华拓光通信股份有限公司 | 提高sfp光模块光调制幅度的装置及应用方法 |
JP7255977B2 (ja) * | 2017-10-05 | 2023-04-11 | 住友電工デバイス・イノベーション株式会社 | 光モジュール |
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-
2004
- 2004-06-24 JP JP2004187112A patent/JP4275583B2/ja not_active Expired - Lifetime
-
2005
- 2005-06-23 US US11/159,122 patent/US20060028704A1/en not_active Abandoned
- 2005-06-24 CN CNB2005100791259A patent/CN100373718C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8027606B2 (en) | 2006-07-19 | 2011-09-27 | Brother Kogyo Kabushiki Kaisha | Image forming apparatus with condition setting for manual duplex mode |
US8301046B2 (en) | 2006-07-19 | 2012-10-30 | Brother Kogyo Kabushiki Kaisha | Image forming apparatus with condition setting for manual duplex mode |
Also Published As
Publication number | Publication date |
---|---|
CN100373718C (zh) | 2008-03-05 |
JP2006013083A (ja) | 2006-01-12 |
US20060028704A1 (en) | 2006-02-09 |
CN1713469A (zh) | 2005-12-28 |
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