WO2016152152A1 - 高周波伝送線路および光回路 - Google Patents
高周波伝送線路および光回路 Download PDFInfo
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- WO2016152152A1 WO2016152152A1 PCT/JP2016/001661 JP2016001661W WO2016152152A1 WO 2016152152 A1 WO2016152152 A1 WO 2016152152A1 JP 2016001661 W JP2016001661 W JP 2016001661W WO 2016152152 A1 WO2016152152 A1 WO 2016152152A1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Definitions
- the present invention relates to a termination technique for an optical device operating at a high frequency, such as an optical transmitter for optical communication, and more particularly, an electroabsorption modulator (EAM) integrated DFB (Distributed Feedback) laser.
- EAM electroabsorption modulator
- DFB Distributed Feedback
- EML Electroabsorption Modulator integrated with DFB Laser
- XFP 10 Gigabit Small Form Factor Pluggable
- 10 Gbit Ethernet registered trademark
- 10 GbE 10 Gbit Ethernet
- TOSA Transmitter Optical Sub-Assembly
- box-shaped TOSA module as a typical module form
- FIG. 1 is a view showing the appearance of a typical box-type TOSA module 100.
- FIG. 2 is a diagram showing a mounting configuration inside the module of the housing shown in FIG.
- the housing of the module 100 is made of sintered ceramic or metal according to XFP.
- At least one modulation electric signal power supply wiring terminal 102 penetrating from the terrace portion 101 of the cabinet toward the inside of the cabinet is provided.
- the terrace portion 101 is further provided with a DC power supply wiring terminal.
- a ceramic part 103 and a metal part 104 are formed in the module 100.
- the thin plate 201 called a subcarrier is installed apart from the housing.
- a wiring pattern is formed on the subcarrier 201 by metal plating or vapor deposition on a dielectric material.
- elements necessary for the optical semiconductor device are mounted on the subcarrier 201. Examples of necessary elements include a laser diode 202, an optical modulator 203, a resistor 204, and a capacitor 205.
- thermoelectric cooling element TEC: Thermo-Electric Cooler
- a lens 218 or a light extraction window is provided on the side surface of the housing, and the optical semiconductor device is sealed in the package together with the top plate by resistance welding or the like.
- the modulated electric signal power supply wiring 208 and the subcarrier 201 penetrating from the outside to the inside of the housing are electrically connected by the wire-like gold wire 209 and the ribbon-like gold wire 210.
- FIG. 3 shows an example of connection between the TOSA module 100 and the driver IC 301 for driving.
- the signal from the driving driver IC 301 or the power supply (not shown) from the DC power source is performed using the flexible printed circuit board 302.
- the flexible printed circuit board 302 is a printed circuit board that is flexible and can be greatly deformed, and is also referred to as flexible or FPC (Flexible Printed Circuits). Transmission of modulation electrical signals or DC power feeding is performed to the TOSA module 100 via the flexible substrate 302.
- FPC Flexible Printed Circuits
- the electrical signal for modulation is transmitted from the driver IC 301 for driving to the TOSA module 100 via the flexible substrate 302.
- the modulation electrical signal is transmitted to the optical semiconductor element 203 via the modulation electrical signal power supply wiring terminal 102, the transmission line 208, the wires 209 and 210, and the transmission line 211 on the subcarrier.
- the modulation electrical signal is transmitted to the termination resistor 204.
- the driver IC 301 for driving is designed to send a driving waveform with an output impedance of 50 ohms. For this reason, the transmission line 211 and the termination resistor 204 are also normally set to 50 ohms. In this way, it has been the prior art to achieve impedance matching.
- the operating frequency of the XFP-compliant TOSA optical module extends to 10 GHz, and the electric signal behaves as a wave (microwave). That is, at a discontinuous point (reflection point) where impedance matching is not performed, a reflected wave is generated starting from the discontinuous point, and the reflected wave travels toward the drive driver IC 301. Under such circumstances, conventionally, it has been important to eliminate discontinuities (reflection points) between the transmission line 211 and the termination resistor 204.
- FIGS. 4A to 4C are diagrams showing a configuration of a conventional EAM integrated DFB laser, where A is a mounting diagram of the EAM integrated DFB laser, B is a perspective view of the EAM integrated DFB laser, and C is a top view of the EAM integrated DFB laser.
- the figure (DFB laser electrode 422, EAM electrodes 423, 424) is shown. Note that FIG. 4A shows the configuration disclosed in Non-Patent Document 2.
- a high frequency wiring (GSG) 401 designed at 50 ohms is connected to the EML 402 of the EML by a wire 403 and to the termination circuit 404 of 50 ohms via the EAM 402. Has been.
- the DFB laser 413 and the EAM 414 are integrated on the n-InP substrate 420.
- Both the active layer 416 of the DFB laser 413 and the light absorption layer 417 of the EA modulator 414 have an InGaAsP / InGaAsP multi-quantum well (MQW) structure and are connected by a butt joint 418.
- MQW multi-quantum well
- a p-InP layer 419 is provided on the active layer 416 and the light absorption layer 417.
- the p-InP layer 419 is formed in a mesa shape and then buried with semi-insulating (SI: Semi-Insulating) InP 421.
- a separation groove 415 is provided between the electrode 422 of the DFB laser 413 and the electrode 424 of the EAM 414.
- the electrode 423 of the EAM 414 is provided with a pad electrode 424 for forming a bonding wire or for flip chip bonding.
- the length of the DFB laser 413 is 450 ⁇ m, and the length of the EAM 414 is 150 ⁇ m.
- the n-electrode (below the n-InP substrate 420) connected to the ground G of the high-frequency wiring 401 and the electrode 424 connected to the signal S are on different planes of the EML. Shows the case.
- an EML is also known in which electrodes connected to the ground G and the signal S are provided on the same surface.
- 5A and 5B show a connection mode between the high frequency wiring and the EML by flip-chip bonding, and shows a case where the electrodes 231 and 240 connected to the ground G and the signal S are provided on the same surface.
- an n-contact layer 238, an n-InP 237, a light absorption layer 235, a p-InP 234, and a p contact layer 233 are provided on an n-InP substrate 213, and a semi-insulating (SI: Semi-Insulating) InP 236 is formed.
- SI Semi-Insulating
- the p electrode 231 connected to the signal S and the n electrode 240 connected to the ground G are formed on the insulating film (for example, SiO 2 ) 232. That is, both the n electrode 240 and the p electrode 231 are provided on the same surface.
- an Au bump 215 is formed on each of the electrodes 231 and 240, and the EML is connected to the high-frequency wiring board 201 via the Au bump 215, the gold tin solder (bump) 218, and the electrode pad 217.
- FIGS. 6A to 6C show the configuration of a conventional multi-channel optical transmitter 500, where A is the overall configuration of the multi-channel optical transmitter 500, B is the configuration of one channel, and C is the outline of the output of four channels. Show.
- the multi-channel optical transmitter 500 is disclosed in Non-Patent Document 3.
- the multi-channel optical transmitter 500 is provided with four EMLs operating at 25 Gb / s, and operates at 100 Gb / s.
- the EML includes a DFB laser (LD) and an EA modulator (EAM) for modulating the output light from the DFB laser at 25 Gb / s.
- FIG. 6B corresponds to FIG. 4C, in which the DFB laser electrode 422 and the EA modulator electrodes 423 and 424 are shown.
- the wavelengths of output light from the four EMLs are different from each other, and are multiplexed by an MMI (Multi-Mode Interference) type optical coupler.
- MMI Multi-Mode Interference
- a wavelength coupler or a polarization coupler may be used as an optical coupler for multiplexing.
- FIGS. 7A to 7E are diagrams showing a connection form between a 4-channel EML and a high-frequency wiring, in which A is a connection form using a conventional wire, B is an equivalent circuit of FIG. 7A, C is a connection form using a gold bump, D shows the equivalent circuit of FIG. 7B, and E shows the high-frequency characteristics of the two connection forms.
- t1 indicates the high frequency characteristics of the connection form shown in FIG. 7C
- t2 indicates the high frequency characteristics of the connection form shown in FIG. 7A.
- the multi-channel optical transmitter 600 includes a signal line 602, an EADFB laser array 603, a subcarrier 605, an EAM pad 607, and a spacer 606.
- the equivalent circuit of the multi-channel optical transmitter 600 in FIG. 7A is a circuit as shown in FIG. 7B.
- the wiring board 604 is connected to the EAM 6046 via a coil (corresponding to a bonding wire) 6048 and is connected to a 50 ohm terminal 6050 via a coil (corresponding to a bonding wire) 6049.
- an R clad 6041, a C pad 6042, a C active 6043, an R active 6044, an Rn clad 6045, and an active layer (light absorption layer) 6047 are shown.
- the R clad 6041 described above is the resistance of the clad layer 419 shown in FIG. 4B
- the C pad 6042 is the capacitance of the pad 424 shown in FIG. 4B
- the C active 6043 is the capacitance of the light absorption layer 417 shown in FIG. 4B.
- the R active 6044 corresponds to the resistance of the light absorption layer 417 shown in FIG. 4B
- the Rn cladding 6045 corresponds to the resistance of the cladding layer 419 and the substrate 420 shown in FIG. 4B.
- the EAM electrode 607 and the wiring board 604 are bonded to the gold bumps (FIGS. 5A and 5B) by the flip chip bonding shown in FIGS. 5A and 5B without using the bonding wires described above.
- FIG. 5B there is a method of direct connection with Au bumps 215).
- FIG. 7C is a flip chip bonding connection mode similar to FIGS. 5A and 5B, and FIG. 7D is an equivalent circuit of the connection mode.
- the EML EA modulator (EAM) and the wiring board 614 are connected by a gold bump 613.
- the multi-channel optical transmitter 600A includes an upper layer signal line 610, a lower layer signal line 611, an RF via 612, a high frequency circuit board 614, and a subcarrier 615.
- the wiring board 614 is connected to the EAM 6046A and the 50 ohm termination 6050A, respectively.
- FIG. 7D an active layer (light absorption layer) 6047A is shown.
- the above-described flip chip bonding is one method for mounting a chip on a mounting substrate.
- flip chip bonding when the chip surface and the substrate are electrically connected, they are not connected by wires as in wire bonding, but by gold bumps arranged in an array.
- the distance between the lower layer signal line 611 and the EAM electrode 607 is very short as compared with the wire bonding, and the wiring becomes extremely short.
- the high frequency characteristic t1 in the case of flip chip bonding is better than the high frequency characteristic t2 in the case of wire bonding.
- the high-frequency characteristics gradually deteriorate as the frequency increases, whereas in wire bonding, the frequency is peaked in wire bonding, and the frequency is rapidly increased on the high-frequency side. This is because the characteristics tend to deteriorate.
- the above-described wiring board is formed by, for example, a microstrip line as shown in FIG. 8A.
- the upper surface conductor 701a having a length W is a transmission line
- the lower surface conductor 701b is GND.
- a dielectric 702 is formed between the conductors 701a and 701b.
- the wiring board is formed by a coplanar line as shown in FIG. 8C, for example.
- the dielectric substrate usually has a so-called GSG structure in which the conductor surfaces on both sides are GND and the center conductor is a signal.
- 9A and 9B show an outline of a conventional EML termination circuit pattern 800 using flip-chip bonding.
- the high frequency line S (801) for sending a signal to the EML EA modulator (EAM) 804 and the high frequency line 801 immediately before the termination resistor 803 have the same 50 ohm design.
- FIG. 9A shows an example in which both the EAM signal electrode and the GND electrode G (802) are on the same plane.
- the EAM signal electrode is flip-chip bonded to the high-frequency line S of the wiring board, and the EAM GND electrode is flip-chip bonded to the ground line G of the wiring board.
- the 50 ohm termination resistor 803 may be soldered to the wiring board or may be built into the wiring board. When the wiring board is built, the terminating resistor 803 is also set to 50 ohms. The termination resistor 803 is made as short as possible in order to reduce parasitic capacitance. The terminal resistor 803 and the ground line G on the right side thereof are directly connected without providing a gap so as not to include a parasitic component.
- the EAM GND electrode is on the opposite side (back surface) of the signal electrode, only the signal electrode and the high-frequency line 801 of the wiring board are flip-chip bonded as shown in FIG. 9B.
- the electrode on the back surface and the ground are connected by a method such as a bonding wire or a via.
- FIG. 10 and FIG. 11 show the via connection form between the EAM GND electrode and the ground when the EAM GND electrode is on the opposite side (back surface) of the signal electrode. 10 and 11 correspond to the circuit pattern 800 in FIG. 9B.
- the high-frequency wiring board 830 and the EAM 804 on the subcarrier 820 are connected by Au bumps 813. Further, the Au bump 815 connects the high-frequency wiring board 830 and the high-frequency wiring board 831 for routing the wiring.
- the current path I is a path of flip chip bonding 813 ⁇ bottom surface of EAM 804 ⁇ subcarrier 820 ⁇ high frequency wiring board 831.
- flip chip bonding 813 is applied to the single S of EAM804, and EAM804 is mounted on the subcarrier 820 by soldering, for example.
- the thickness of the EAM 804 is about 150 ⁇ m, which is thinner than the high-frequency wiring board 831. Therefore, the subcarrier 820 is provided with a step as shown in FIG.
- the Au electrode 816b and the ground G of the high frequency wiring board 830 are connected by a via 833, and the two high frequency wiring boards 830 and 831 are connected by flip chip bonding 815.
- FIGS. 9A and 9B can achieve impedance matching by setting the transmission line 801 and the terminating resistor 803 to 50 ohms, respectively. Further, the parasitic inductance can be reduced by shortening the termination resistor 803. However, although impedance matching between the transmission line 801 and the termination resistor 803 is considered, impedance matching including the EAM 804 is not considered.
- the EAM modulates by absorbing the light of the DFB laser and increasing the optical loss.
- the applied voltage is, for example, ⁇ 3 V (LOW) to ⁇ 0.5 V (HIGH), and a light receiving current flows about 15 mA. That is, in terms of resistance, for example, it is 200 ohms, and there is a possibility that it will deviate greatly from the 50 ohm line.
- the EAM equivalent circuit, high-frequency wiring, and the like include parasitic components having an imaginary part impedance such as capacitors. For this reason, in general, in order to achieve impedance matching in a wide band up to a high frequency region exceeding 10 GHz, it is difficult to perform matching only with a resistor having only a real part value. Furthermore, since the received light current also varies depending on the light intensity, wavelength, temperature, etc., it is desirable to achieve impedance matching including EAM.
- a high-frequency transmission line for solving the above problems includes a first conductor line having a predetermined characteristic impedance, a termination resistor connected to the first conductor line, and a second conductor line connected to the termination resistor.
- the first conductor line, the termination resistor, and the second conductor line are arranged to be opposed to each other with a predetermined distance and a ground line connected to the second conductor line,
- the conductor line and the ground line are each formed so that the line width becomes narrower toward the termination resistor side.
- the characteristic impedance of the terminal resistor and the second conductor line may be set to be higher than the characteristic impedance of the first conductor line in combination with the ground line.
- the line width may be narrowed by a tapered shape.
- optical circuit for solving the above problem includes the high-frequency transmission line.
- the optical circuit is an EA modulator integrated DFB laser, and the EA modulator has a signal input electrode and a ground electrode, and the signal input electrode is connected to the first conductor line. You can do it.
- the ground electrode may be connected to the ground line.
- connection between the signal input electrode and the first conductor line may be a flip chip connection.
- FIG. 1 is an external view of a typical box-type TOSA module 100.
- FIG. It is a figure which shows the mounting structure inside the module of the housing shown in FIG. It is a figure which shows the connection aspect of a TOSA module and a driver IC for driving.
- It is a mounting diagram of a conventional EAM integrated DFB laser. It is a perspective view of an EAM integrated DFB laser. It is a top view of an EAM integrated DFB laser.
- It is a figure which shows the connection aspect of the high frequency wiring and EML by flip chip bonding It is a figure which shows the whole structure of the conventional multichannel optical transmitter.
- FIG. 6B is a diagram showing a configuration of one channel in the multi-channel optical transmitter shown in FIG. 6A.
- FIG. 6B is a diagram showing an outline of 4-channel output in the multi-channel optical transmitter shown in FIG. 6A.
- the conventional multi-channel optical transmitter it is a figure which shows the wire connection aspect of the electrode and wiring board of EAM. It is a figure which shows the equivalent circuit of FIG. 7A. It is a figure which shows the bump connection aspect of the electrode and wiring board of EAM in the conventional multichannel optical transmitter. It is a figure which shows the equivalent circuit of FIG. 7B.
- the conventional multi-channel optical transmitter it is a figure which shows the high frequency characteristic in each case of wire bonding and flip chip bonding.
- FIG. 1 It is a perspective view which shows the connection form of the GND electrode of EAM, and a ground in case the GND electrode of EAM exists in the back surface of the electrode for signals.
- FIG. 2 It is sectional drawing which shows the connection form of FIG.
- FIG. It is a figure which shows the structural example of the high frequency transmission line of embodiment of this invention.
- FIG. 2 It is a figure which shows an example of the equivalent circuit obtained by simulation.
- FIG. 22 is a diagram illustrating an example of a wiring pattern around a via in the high-frequency transmission line in FIG. 21.
- FIG. 13 is a diagram illustrating an example of a wiring pattern around a via in the high-frequency transmission line in FIG. 12. It is a figure which shows the example of the wiring pattern in the periphery of via
- the high frequency transmission line 1 is configured to transmit a signal to the EML.
- FIG. 12 is a schematic diagram illustrating a configuration example of the high-frequency transmission line terminating device 1.
- FIG. 13 is a perspective view showing the high-frequency transmission line 1.
- the high-frequency transmission line 1 includes a first conductor line 11, a termination resistor 14 of the first conductor line 11, a second conductor line 15 connected to the termination resistor 14, and a first conductor line.
- the termination resistor 14 and the second conductor line 15 are disposed opposite to each other with a predetermined distance, and the ground line 12 connected to the second conductor line 15 is provided.
- One end of the termination resistor 14 is connected to one end of the first conductor line 11, and the other end of the termination resistor 14 is connected to one end of the ground line 12.
- the length of the termination resistor 14 is “l”.
- the value of “l” is set so as to increase the parasitic inductance.
- the conductor lines 11 and 15 are, for example, high-frequency wiring boards.
- the characteristic impedance of the first conductor line 11 is set to 50 ⁇ , for example.
- the EML EAM 16 is connected between the conductor line 11 and the ground line 12.
- the signal electrode and the ground electrode of the EAM 16 are both configured on the same surface of the EAM 16
- the signal electrode of the EAM 16 is the conductor line 11
- the ground electrode of the EAM 16 is the ground line 12.
- Each is flip-chip bonded.
- the connection form of the flip chip bonding is the same as that shown in FIGS. 5A and 5B, for example.
- the first conductor line 11 has bent shapes 13c and 13d that bend inward at the end face on the terminal resistor 14 side.
- the bent shapes 13c and 13d are, for example, tapered shapes in which the line width is narrowed.
- the ground line 12 has bent shapes 13b and 13a that bend outward at positions corresponding to the bent shapes 13c and 13d described above.
- the bent shapes 13a and 13b are, for example, tapered shapes in which the line width is narrowed.
- the characteristic impedance of the bent shape portions 13a to 13d changes toward the terminating resistor 14 so as to be larger than 50 ⁇ .
- This part constitutes the impedance transition part 32 shown in FIG.
- the characteristic resistance of the termination resistor 14 and the portion of the ground line 12 facing it shown in FIG. 12 is larger than 50 ⁇ . This part constitutes the first high impedance part 33 shown in FIG.
- line 15 comprises the 2nd high impedance track
- the second high-impedance line portion 34 functions as a stub, so that the peaking amount of the frequency described later is adjusted.
- a 50 ⁇ line 31 corresponds to a portion of the conductor line 11 having an impedance characteristic of 50 ⁇ .
- FIG. 14 is a perspective view showing an example of the DFB laser 20.
- the DFB laser 20 includes a DFB laser electrode 21, a gold bump 22, an EAM signal electrode 23, a laser chip 24, and a subcarrier 25.
- FIG. 15 is a perspective view showing an example of an optical circuit in which the high-frequency transmission line 1 and the DFB laser 20 are combined.
- the high-frequency transmission line 1 is connected to the signal electrode 23 of the EAM shown in FIG.
- the DFB laser 20 and the high-frequency transmission line 1 intersect at right angles.
- the DFB laser 20 and the high-frequency transmission line 1 may be arranged so as to overlap in the same direction.
- FIG. 16 shows an equivalent circuit 40 of the high-frequency transmission line 1.
- the equivalent circuit 40 includes a 50 ⁇ line 41 and an impedance adjustment unit 42.
- the impedance adjustment unit 42 includes an impedance transition unit 421 connected in series with the 50 ⁇ line 41, a first high impedance line 422, and a second high impedance line 423.
- One end of the EA section 424 is connected between the 50 ⁇ line 41 and the impedance transition section 421, and the other end of the EA section 424 is grounded.
- circuit elements 41 and 421 correspond to the 50 ⁇ line 31 and the impedance transition unit 32 shown in FIG.
- the circuit elements 422 and 423 correspond to the first high impedance line portion 33 and the second high impedance line portion 34 shown in FIG.
- FIG. 17 shows an equivalent circuit including the high-frequency transmission line 1, EAM, and gold bumps obtained by simulation.
- R1 50 ⁇
- L1 0.003 nH
- C1 0.038 pF
- R2 24.8 ⁇
- R3 98 ⁇
- R4 2 ⁇
- C2 0.58 pF.
- R1 corresponds to the resistance of the EAM cladding layer 419
- C1 corresponds to the capacitance of the pad 424
- C2 corresponds to the capacitance of the light absorption layer 417
- R3 corresponds to the resistance of the light absorption layer 417
- R4 corresponds to the resistance of the cladding layer 419 and the substrate 420, respectively.
- FIG. 18 shows the strength obtained by simulation when the length l of the termination resistor 14 is changed.
- Intensity S11 represents what was shown in FIG. 17, and S12 represents what was shown in the conventional FIG. 9A.
- the value of “1” is changed from 25 ⁇ m to 100 ⁇ m, so that the bandwidth indicated by S11 is improved.
- FIG. 19 shows the strength obtained by simulation when the distance between the termination resistor 14 and the ground line 12 is changed.
- the strength S21 represents the one shown in FIG. 17, and S22 represents the conventional one shown in FIG. 9A.
- the intensities S21 and S22 when the distance is changed from 20 ⁇ m to 100 ⁇ m, peaking occurs in the vicinity of 40 GHz, thereby improving the bandwidth indicated by S21.
- FIG. 20 shows the strength obtained by simulation when the length of the second high impedance line portion 34 is changed.
- the strengths S31, S32, and S33 represent the lengths of the second high impedance line portion 34 being 150 ⁇ m, 100 ⁇ m, and 50 ⁇ m, respectively, and S34 is the one shown in FIG. 34 represents 0 ⁇ m).
- the strengths S31 to S34 the length of the second high impedance line portion 34 increases, so that the intensity of peaking generated in the vicinity of 40 GHz increases, thereby improving the bandwidth.
- the band was improved by changing the length of the second high-impedance line portion 34.
- the length of the second high-impedance line portion 34 is ⁇ 5 ⁇ m by photolithography. Since a pattern can be formed with the following accuracy, a desired peaking amount can be obtained.
- the first conductor line 11 and the ground line 12 are each formed so that the line width becomes narrower toward the termination resistor 14 side.
- the characteristic impedance becomes higher than the characteristic impedance of the first conductor line 11 due to the combination with the ground line 12. Thereby, the frequency characteristic is improved.
- FIG. 21 illustrates an example in which the high-frequency transmission line 1A is flip-chip bonded to the EAM signal electrode and the ground electrode by the first conductor line 11 in such a case.
- bent shapes (tapered shapes) 13a to 13d described above may be any shape as long as the characteristic impedance is higher than 50 ⁇ , for example, and can be implemented by various other alternative shapes. For example, such a shape may be changed stepwise or continuously in a curved shape.
- the taper shape may be formed only on the first conductor line 11 and the ground line 12 may not be formed.
- the conventional high-frequency circuit board 614 is connected to the EAM on the subcarrier 615 through the RF via 612.
- the distance between the signal around the RF via 612 and the ground is large, and the RF via 612 is also designed to be close to a 50 ⁇ characteristic impedance line. Since the distance is short, in order to improve frequency response characteristics, it is necessary to design as a lumped constant line instead of a distributed constant line design.
- the distance between the signal around the via (connection region portion) and the ground is made smaller than that of the conventional one, and the characteristic impedance of the via is made lower than 50 ⁇ .
- the response characteristics are improved.
- the via as the connection region portion may be a hole.
- FIG. 22A is a diagram showing a wiring pattern around the via 83 of the high-frequency transmission line 1A. 22A is the same as the configuration of the high-frequency transmission line 1A shown in FIG.
- the wiring pattern P1 in FIG. 22A is formed on the lower surface of the high-frequency transmission line 1A, and the wiring pattern P2 is formed on the upper surface of the high-frequency transmission line 1A.
- the distance h23 between the high-frequency line S (11) and the ground line G (12) of the wiring pattern P2 in the radial direction of the via 83 is, for example, 55 ⁇ m. That is, the distance between the high frequency line S and the ground line G is narrower than the conventional one (having a characteristic impedance of 50 ⁇ ).
- the signal electrode of the EAM 16 is disposed in the ground line G (12) of the wiring pattern P2 in the top view of FIG. 22A.
- the capacitance on the lower surface side of the high-frequency transmission line 1A becomes larger than that of the conventional one, and as a result, the characteristic impedance of the high-frequency transmission line 1A becomes smaller than that of the conventional one, and the frequency characteristics on the high frequency side are improved. .
- the EAM 16 differs from FIG. 22A in that the high-frequency line S (11) of the high-frequency transmission line 1 and the ground It connects between track G (12).
- the wiring pattern P2 of the via 83 has a distance h23 between the high-frequency line S (11) and the ground line G (12), for example, 55 ⁇ m, as shown in FIG. 22A. is there. That is, the distance between the high frequency line S and the ground line G is narrower than the conventional one (having a characteristic impedance of 50 ⁇ ).
- the capacitance on the lower surface side of the high-frequency transmission line 1 becomes larger than that of the conventional one.
- the characteristic impedance of the high-frequency transmission line 1 becomes smaller than that of the conventional one, and the frequency characteristics on the high frequency side are improved. .
- FIGS. 22A and 22B can be applied to EML or DML (Direct Modulated DFB Laser).
- FIG. 23 shows an example of the wiring patterns P1, P2 around the via in the DML.
- the reference numerals and the like used in the description of FIGS. 22A and 22B are used as they are.
- the high-frequency transmission lines of the above-described embodiments and modifications can be configured as an array structure including a laser.
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Abstract
Description
まず、高周波伝送線路1の構成について、図12および図13を参照して説明する。図12は、高周波伝送線路の終端装置1の構成例を示す模式図である。図13は、高周波伝送線路1を示す斜視図である。
次に、本実施形態の高周波伝送線路1について、三次元電磁解析シミュレータを利用して、終端抵抗14の長さl、終端抵抗14とグランド線路12との間隔、および、第2の高インピーダンス線路部34の長さを変えて、光回路の強度を計算した。このときの等価回路を図17に示す。
以上では、EMLのEAM804は、導体線路801とグランド線路802との間に接続される場合について説明した。しかしながら、EAM804の信号用電極とグランド用電極とが異なる面に構成される場合も考えられる。例えば図21では、かかる場合について、高周波伝送線路1Aが、EAMの信号用電極およびグランド電極がともに、第1導体線路11でフリップチップボンディングされる態様を例示している。
また、上述した折り曲げ形状(テーパ形状)13a~13dは、特性インピーダンスが例えば50Ωより高くなるものであればよく、他の様々な代替の形状によっても実施することができる。例えば、かかる形状として、段階的に、または曲面状に連続的に、変化するようにしてもよい。
図12および図21に示したものにおいて、テーパ形状は、第1導体線路11のみに形成し、グランド線路12は形成しないようにしてもよい。
以上では、上述した各高周波伝送線路1,1AとEAM16との接続を実現するためのビア周辺の配線パターンについて言及しなかったが、ビアによって、各高周波伝送線路1,1AとEAM16とを接続するようにしてもよい。
EAM16との接続を実現するためのビア周辺の配線パターンについて、図7C、図9A、後述する図22Aおよび図22Bを参照して説明する。
図22Aおよび図22Bに示した配線パターンP1,P2は、EMLまたはDML(Direct Modulated DFB Laser)に適用することができる。例えば、図23は、DMLにおけるビア周辺の配線パターンP1,P2の例を示してある。図23において、図22Aおよび図22Bの説明で用いた符号等をそのまま用いる。
上記実施形態および変形例の高周波伝送路は、レーザを含むアレイ構造にして構成することもできる。
11 第1導体線路
12 グランド線路
13a~13d 折り曲げ形状(テーパ形状)
14 終端抵抗
15 第2導体線路
Claims (8)
- 所定の特性インピーダンスを有する第1導体線路と、
前記第1導体線路と接続される終端抵抗と、
前記終端抵抗と接続される第2導体線路と、
前記第1導体線路、前記終端抵抗および前記第2導体線路に対して、所定の距離を隔てて対向配置されるとともに、前記第2導体線路と接続されるグランド線路と、
を備え、
前記第1導体線路および前記グランド線路は、それぞれ、前記終端抵抗側に向かって、線路幅が狭くなるように形成される
ことを特徴とする高周波伝送線路。 - 前記終端抵抗および前記第2導体線路の部分の特性インピーダンスは、前記グランド線路との組み合わせによって、前記第1導体線路の前記特性インピーダンスよりも高くなるように設定されていることを特徴とする請求項1に記載の高周波伝送線路。
- 前記第1導体線路および前記グランド線路において、前記線路幅は、テーパ形状により狭く形成されることを特徴とすることを特徴とする請求項1に記載の高周波伝送線路。
- 請求項1項に記載の高周波伝送線路を含むことを特徴とする光回路。
- 前記光回路はEA変調器集積DFBレーザであり、EA変調器は信号入力用電極と、グランド用電極とを有し、前記信号入力用電極が前記第1導体線路に接続されることを特徴とする請求項4に記載の光回路。
- 前記グランド用電極は、前記グランド線路に接続されることを特徴とする請求項5に記載の光回路。
- 前記信号入力用電極と第1導体線路との接続がフリップチップ接続であることを特徴とする請求項5に記載の光回路。
- 変調器と接続するため、前記高周波伝送線路を貫通する接続領域部をさらに含み、
前記接続領域部において、前記高周波伝送線路上面における前記第1導体線路と前記グランド線路との間の距離は、前記接続領域部の特性インピーダンスが50Ωよりも小さくなるように設定されることを特徴とする請求項1に記載の高周波伝送線路。
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US15/557,756 US10866439B2 (en) | 2015-03-23 | 2016-03-23 | High-frequency transmission line and optical circuit |
EP16768058.6A EP3276401B1 (en) | 2015-03-23 | 2016-03-23 | High-frequency transmission line and optical circuit |
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JP2020509427A (ja) * | 2017-03-03 | 2020-03-26 | ネオフォトニクス・コーポレイションNeoPhotonics Corporation | 変調電極に対して横方向に変位した伝導平面を有する高周波光変調器 |
US11573476B2 (en) | 2017-03-03 | 2023-02-07 | Neophotonics Corporation | High frequency optical modulator with laterally displaced conduction plane relative to modulating electrodes |
JP7267202B2 (ja) | 2017-03-03 | 2023-05-01 | ネオフォトニクス・コーポレイション | 変調電極に対して横方向に変位した伝導平面を有する高周波光変調器 |
JP2019033380A (ja) * | 2017-08-08 | 2019-02-28 | 日本電信電話株式会社 | 終端回路および終端回路を構成する配線板 |
JP2019071402A (ja) * | 2017-10-05 | 2019-05-09 | 住友電工デバイス・イノベーション株式会社 | 光モジュール |
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WO2020008594A1 (ja) * | 2018-07-05 | 2020-01-09 | 三菱電機株式会社 | 光送信モジュール |
JPWO2020008594A1 (ja) * | 2018-07-05 | 2020-07-16 | 三菱電機株式会社 | 光送信モジュール |
JP7480653B2 (ja) | 2020-09-16 | 2024-05-10 | 住友電気工業株式会社 | 光半導体装置 |
JP7006844B1 (ja) * | 2020-12-09 | 2022-01-24 | 三菱電機株式会社 | 半導体光変調装置 |
WO2022123693A1 (ja) * | 2020-12-09 | 2022-06-16 | 三菱電機株式会社 | 半導体光変調装置 |
WO2023105639A1 (ja) * | 2021-12-07 | 2023-06-15 | 日本電信電話株式会社 | 光送信器 |
Also Published As
Publication number | Publication date |
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US10866439B2 (en) | 2020-12-15 |
EP3276401B1 (en) | 2019-11-13 |
JPWO2016152152A1 (ja) | 2017-09-14 |
JP6438569B2 (ja) | 2018-12-12 |
CN107430293A (zh) | 2017-12-01 |
CN107430293B (zh) | 2021-02-26 |
US20180067341A1 (en) | 2018-03-08 |
EP3276401A4 (en) | 2018-07-25 |
EP3276401A1 (en) | 2018-01-31 |
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