JP4256682B2 - 2つのピエゾ電気層を持つ装置 - Google Patents
2つのピエゾ電気層を持つ装置 Download PDFInfo
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- JP4256682B2 JP4256682B2 JP2002584475A JP2002584475A JP4256682B2 JP 4256682 B2 JP4256682 B2 JP 4256682B2 JP 2002584475 A JP2002584475 A JP 2002584475A JP 2002584475 A JP2002584475 A JP 2002584475A JP 4256682 B2 JP4256682 B2 JP 4256682B2
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- Prior art keywords
- electrode
- filter device
- acoustic wave
- bulk acoustic
- wave resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910003334 KNbO3 Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 238000010295 mobile communication Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
Claims (5)
- 受信ブランチ (Rx) および送信ブランチ (Tx) を有するモバイル通信に使用されるフィルタ装置であって、
前記フィルタ装置はモバイル無線信号を受信するためのアンテナに連結され、前記受信ブランチ (Rx) および前記送信ブランチ (Tx) は少なくとも二つのバルク音響波共振器 (10 、 11 、 12 、 13) を各々具え、各バルク音響波共振器は二つのピエゾ電気層 (2 、 5) 、第 1 電極 (6) 、第 2 電極 (3) および中間電極 (4) を含み、前記第 1 ピエゾ電気層 (2) は前記第 2 電極 (3) と前記中間電極 (4) との間に位置し、前記第 2 ピエゾ電気層 (5) は前記第 1 電極 (6) と前記中間電極 (4) との間に位置し、さらに、二つのスイッチング手段 (14 、 15 、 16 、 17) が各ブランチに配置され、
前記受信ブランチ (Rx) および前記送信ブランチ (Tx) の各々に配置された第 1 バルク音響波共振器 (11 、 13) が信号パスと接地電位との間に接続されるように、前記第 2 電極 (3) を前記信号パスに接続させ、前記第 1 バルク音響波共振器 (11 、 13) を、一方が前記接地電位に接続されると共に、他方がスイッチ位置に基づいて前記第 1 電極 (6) 又は前記中間電極 (4) へスイッチ可能な第 1 スイッチ (14 、 16) に連結させ、
前記受信ブランチ (Rx) および前記送信ブランチ (Tx) の各々に配置された第 2 バルク音響波共振器 (10 、 12) が前記信号パスに直列に接続されるように、前記第 2 電極 (3) を前記信号パスに接続させ、前記第 2 バルク音響波共振器 (10 、 12) を、スイッチ位置に基づいて前記第 1 電極 (6) または前記中間電極 (4) を前記フィルタ装置の出力へスイッチングする第 2 スイッチ (15 、 17) に連結させ、
前記フィルタ装置は前記スイッチング手段 (14 、 15 、 16 、 17) の前記スイッチ位置により、ゼロではない異なる周波数で動作することを特徴とするフィルタ装置。 - 前記スイッチング手段 (14 、 15 、 16 、 17) が第 1 スイッチ位置にあるとき、前記バルク音響波共振器 (10 、 11 、 12 、 13) は少なくとも一つの共振周波数を持ち、前記スイッチング手段 (14 、 15 、 16 、 17) が第 2 スイッチ位置にあるとき、前記バルク音響波共振器 (10 、 11 、 12 、 13) は異なる共振周波数を持つことを特徴とする請求項1に記載のフィルタ装置。
- 前記一つのスイッチ位置と前記他のスイッチ位置との間をスイッチングする前記スイッチング手段が、能動電子素子を有することを特徴とする請求項1又は2に記載のフィルタ装置。
- 前記一つのスイッチ位置と前記他のスイッチ位置との間をスイッチングする前記スイッチング手段が、マイクロ機械スイッチを有することを特徴とする請求項1又は2に記載のフィルタ装置。
- 前記2つのピエゾ電気層( 2 、 5 )が、AlN, ZnO, KNbO3, 又はランタンがドープされたジルコン酸塩−チタン酸塩(チタネイト)(PbLayZrxTi1-xO3) (0<x<1; 0<y<0.2)から作られることを特徴とする請求項1に記載のフィルタ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01201647 | 2001-04-25 | ||
PCT/IB2002/001460 WO2002087081A1 (en) | 2001-04-25 | 2002-04-22 | Arrangement with two piezoelectric layers, and method of operating a filter device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004525577A JP2004525577A (ja) | 2004-08-19 |
JP4256682B2 true JP4256682B2 (ja) | 2009-04-22 |
Family
ID=8180255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002584475A Expired - Fee Related JP4256682B2 (ja) | 2001-04-25 | 2002-04-22 | 2つのピエゾ電気層を持つ装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7459990B2 (ja) |
EP (1) | EP1386393B1 (ja) |
JP (1) | JP4256682B2 (ja) |
KR (1) | KR100854242B1 (ja) |
CN (1) | CN1276577C (ja) |
AT (1) | ATE390757T1 (ja) |
DE (1) | DE60225795T2 (ja) |
WO (1) | WO2002087081A1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6927651B2 (en) | 2003-05-12 | 2005-08-09 | Agilent Technologies, Inc. | Acoustic resonator devices having multiple resonant frequencies and methods of making the same |
WO2008016075A1 (fr) * | 2006-08-03 | 2008-02-07 | Panasonic Corporation | Résonateur à films acoustiques variable en fréquence, filtre et appareil de communication utilisant celui-ci |
FR2905207B1 (fr) | 2006-08-28 | 2009-01-30 | St Microelectronics Sa | Filtre commutable a resonateurs. |
US7515018B2 (en) * | 2006-08-31 | 2009-04-07 | Martin Handtmann | Acoustic resonator |
JP5441095B2 (ja) * | 2008-01-31 | 2014-03-12 | 太陽誘電株式会社 | 弾性波デバイス、デュープレクサ、通信モジュール、および通信装置 |
US7889024B2 (en) * | 2008-08-29 | 2011-02-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Single cavity acoustic resonators and electrical filters comprising single cavity acoustic resonators |
US8513863B2 (en) | 2009-06-11 | 2013-08-20 | Qualcomm Mems Technologies, Inc. | Piezoelectric resonator with two layers |
US20110012696A1 (en) * | 2009-07-20 | 2011-01-20 | Sony Ericsson Mobile Communications Ab | Switched acoustic wave resonator for tunable filters |
US9219464B2 (en) | 2009-11-25 | 2015-12-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants |
US9136819B2 (en) * | 2012-10-27 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator having piezoelectric layer with multiple dopants |
WO2012079038A2 (en) * | 2010-12-10 | 2012-06-14 | Peregrine Semiconductor Corporation | Method, system, and apparatus for resonator circuits and modulating resonators |
US9300038B2 (en) | 2010-12-10 | 2016-03-29 | Peregrine Semiconductor Corporation | Method, system, and apparatus for resonator circuits and modulating resonators |
US9490771B2 (en) | 2012-10-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and frame |
US9490418B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
US9401692B2 (en) | 2012-10-29 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having collar structure |
JP2013201346A (ja) * | 2012-03-26 | 2013-10-03 | Ulvac Japan Ltd | 圧電素子及び圧電素子の製造方法 |
FR2996061B1 (fr) * | 2012-09-27 | 2015-12-25 | Commissariat Energie Atomique | Structure acoustique comportant au moins un resonateur et au moins une capacite cointegree dans une meme couche piezoelectrique ou ferroelectrique |
US9225313B2 (en) | 2012-10-27 | 2015-12-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics |
US10340885B2 (en) | 2014-05-08 | 2019-07-02 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes |
US11431316B2 (en) | 2018-09-20 | 2022-08-30 | Qorvo Us, Inc. | Acoustic resonator structure |
US10985731B2 (en) | 2018-09-20 | 2021-04-20 | Qorvo Us, Inc. | Acoustic resonator structure |
US11563421B2 (en) | 2018-09-21 | 2023-01-24 | Qorvo Us, Inc. | Acoustic structure having tunable parallel resonance frequency |
US10958244B2 (en) * | 2018-10-26 | 2021-03-23 | Qorvo Us, Inc. | Acoustic filter apparatus having configurable parallel resonance frequencies |
US11757430B2 (en) | 2020-01-07 | 2023-09-12 | Qorvo Us, Inc. | Acoustic filter circuit for noise suppression outside resonance frequency |
US11575363B2 (en) | 2021-01-19 | 2023-02-07 | Qorvo Us, Inc. | Hybrid bulk acoustic wave filter |
DE102021212216A1 (de) | 2021-10-29 | 2023-05-04 | Robert Bosch Gesellschaft mit beschränkter Haftung | Hochfrequenz-Filtervorrichtung, Hochfrequenzmodul und Hochfrequenz-Filterverfahren |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3109153A (en) * | 1960-11-18 | 1963-10-29 | Gen Dynamics Corp | Adjustable piezoelectric wave filter having two resonance peaks |
US3610969A (en) * | 1970-02-06 | 1971-10-05 | Mallory & Co Inc P R | Monolithic piezoelectric resonator for use as filter or transformer |
US4096756A (en) * | 1977-07-05 | 1978-06-27 | Rca Corporation | Variable acoustic wave energy transfer-characteristic control device |
DE3379107D1 (en) * | 1982-06-03 | 1989-03-09 | Pierrel Spa | Hydroxyimino and alkoxyimino derivatives of 1,4-dihydropyridine, process for the preparation thereof and pharmaceutical composition therefrom |
JP3015481B2 (ja) * | 1990-03-28 | 2000-03-06 | 株式会社東芝 | 超音波プローブ・システム |
US5394123A (en) * | 1991-03-13 | 1995-02-28 | Murata Manufacturing Co., Ltd. | Ladder type filter comprised of stacked tuning fork type resonators |
US5446306A (en) * | 1993-12-13 | 1995-08-29 | Trw Inc. | Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) |
US5825117A (en) * | 1996-03-26 | 1998-10-20 | Hewlett-Packard Company | Second harmonic imaging transducers |
US5910756A (en) * | 1997-05-21 | 1999-06-08 | Nokia Mobile Phones Limited | Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators |
FI108583B (fi) * | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
FI106894B (fi) * | 1998-06-02 | 2001-04-30 | Nokia Mobile Phones Ltd | Resonaattorirakenteita |
-
2002
- 2002-04-22 EP EP02764085A patent/EP1386393B1/en not_active Expired - Lifetime
- 2002-04-22 JP JP2002584475A patent/JP4256682B2/ja not_active Expired - Fee Related
- 2002-04-22 CN CNB028021894A patent/CN1276577C/zh not_active Expired - Fee Related
- 2002-04-22 DE DE60225795T patent/DE60225795T2/de not_active Expired - Lifetime
- 2002-04-22 WO PCT/IB2002/001460 patent/WO2002087081A1/en active IP Right Grant
- 2002-04-22 AT AT02764085T patent/ATE390757T1/de not_active IP Right Cessation
- 2002-04-22 KR KR1020027017605A patent/KR100854242B1/ko not_active IP Right Cessation
- 2002-04-24 US US10/128,815 patent/US7459990B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020175781A1 (en) | 2002-11-28 |
DE60225795T2 (de) | 2009-04-16 |
US7459990B2 (en) | 2008-12-02 |
JP2004525577A (ja) | 2004-08-19 |
KR100854242B1 (ko) | 2008-08-25 |
DE60225795D1 (de) | 2008-05-08 |
CN1276577C (zh) | 2006-09-20 |
EP1386393A1 (en) | 2004-02-04 |
KR20030011364A (ko) | 2003-02-07 |
CN1465134A (zh) | 2003-12-31 |
EP1386393B1 (en) | 2008-03-26 |
ATE390757T1 (de) | 2008-04-15 |
WO2002087081A1 (en) | 2002-10-31 |
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