JP4172515B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
- Publication number
- JP4172515B2 JP4172515B2 JP2006284051A JP2006284051A JP4172515B2 JP 4172515 B2 JP4172515 B2 JP 4172515B2 JP 2006284051 A JP2006284051 A JP 2006284051A JP 2006284051 A JP2006284051 A JP 2006284051A JP 4172515 B2 JP4172515 B2 JP 4172515B2
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- Prior art keywords
- layer
- electrode
- compound semiconductor
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- semiconductor layer
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- 238000000034 method Methods 0.000 title claims description 116
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 150000001875 compounds Chemical class 0.000 claims description 173
- 239000004065 semiconductor Substances 0.000 claims description 173
- 239000000758 substrate Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 28
- 239000012298 atmosphere Substances 0.000 claims description 22
- 238000010304 firing Methods 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 500
- 239000007789 gas Substances 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 238000007646 gravure printing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
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- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006284051A JP4172515B2 (ja) | 2006-10-18 | 2006-10-18 | 発光素子の製造方法 |
TW096138064A TW200834984A (en) | 2006-10-18 | 2007-10-11 | Light emitting device and method of manufacturing the same |
US11/873,763 US7858418B2 (en) | 2006-10-18 | 2007-10-17 | Light emitting device and method of manufacturing the same |
EP07020315A EP1914812A3 (en) | 2006-10-18 | 2007-10-17 | Light emitting device and method of manufacturing the same |
KR1020070104429A KR20080035472A (ko) | 2006-10-18 | 2007-10-17 | 발광 소자 및 그 제조 방법 |
CN2007103051452A CN101188267B (zh) | 2006-10-18 | 2007-10-18 | 发光装置及其制造方法 |
US12/957,908 US8217407B2 (en) | 2006-10-18 | 2010-12-01 | Light emitting device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006284051A JP4172515B2 (ja) | 2006-10-18 | 2006-10-18 | 発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008103499A JP2008103499A (ja) | 2008-05-01 |
JP4172515B2 true JP4172515B2 (ja) | 2008-10-29 |
Family
ID=38963042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006284051A Expired - Fee Related JP4172515B2 (ja) | 2006-10-18 | 2006-10-18 | 発光素子の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7858418B2 (zh) |
EP (1) | EP1914812A3 (zh) |
JP (1) | JP4172515B2 (zh) |
KR (1) | KR20080035472A (zh) |
CN (1) | CN101188267B (zh) |
TW (1) | TW200834984A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8587015B2 (en) | 2009-01-22 | 2013-11-19 | Sony Corporation | Light-emitting element |
WO2014021651A1 (ko) * | 2012-08-02 | 2014-02-06 | 엘지이노텍주식회사 | 발광 소자 |
US8847268B2 (en) | 2010-03-15 | 2014-09-30 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
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DE102004010377A1 (de) * | 2004-03-03 | 2005-09-22 | Schott Ag | Herstellung von Substratwafern für defektarme Halbleiterbauteile, ihre Verwendung, sowie damit erhaltene Bauteile |
KR20090106299A (ko) * | 2008-04-05 | 2009-10-08 | 송준오 | 오믹접촉 광추출 구조층을 구비한 그룹 3족 질화물계반도체 발광다이오드 소자 및 이의 제조 방법 |
KR100999688B1 (ko) | 2008-10-27 | 2010-12-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101020910B1 (ko) | 2008-12-24 | 2011-03-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
TWI393273B (zh) * | 2009-08-27 | 2013-04-11 | Edison Opto Corp | 發光二極體組件之製造方法 |
DE102009047888A1 (de) * | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
DE102009058796A1 (de) * | 2009-12-18 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
KR101039937B1 (ko) * | 2010-04-28 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템 |
KR101054983B1 (ko) * | 2010-03-29 | 2011-08-05 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 |
JP2011233783A (ja) * | 2010-04-28 | 2011-11-17 | Mitsubishi Heavy Ind Ltd | 半導体発光素子、半導体発光素子の保護膜及びその作製方法 |
US9178107B2 (en) * | 2010-08-03 | 2015-11-03 | Industrial Technology Research Institute | Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same |
DE102010044738A1 (de) * | 2010-09-08 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Dünnschichtverkapselung, optoelektronischer Halbleiterkörper mit einer Dünnschichtverkapselung und Verfahren zur Herstellung einer Dünnschichtverkapselung |
CN102468391A (zh) * | 2010-11-03 | 2012-05-23 | 佛山市奇明光电有限公司 | 发光二极管结构及其制作方法 |
KR101778161B1 (ko) | 2011-01-26 | 2017-09-13 | 엘지이노텍 주식회사 | 발광소자 |
JP5782823B2 (ja) * | 2011-04-27 | 2015-09-24 | 日亜化学工業株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP5644669B2 (ja) | 2011-05-19 | 2014-12-24 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
JP5629669B2 (ja) | 2011-10-11 | 2014-11-26 | 株式会社東芝 | 半導体発光素子の製造方法 |
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JP5834120B2 (ja) * | 2014-08-11 | 2015-12-16 | 株式会社東芝 | 半導体発光素子 |
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TWI634673B (zh) * | 2017-08-09 | 2018-09-01 | 國立交通大學 | 覆晶式發光二極體元件及其製造方法 |
JP7011163B2 (ja) | 2018-02-22 | 2022-02-10 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
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2006
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- 2007-10-17 US US11/873,763 patent/US7858418B2/en not_active Expired - Fee Related
- 2007-10-17 EP EP07020315A patent/EP1914812A3/en not_active Withdrawn
- 2007-10-17 KR KR1020070104429A patent/KR20080035472A/ko not_active Application Discontinuation
- 2007-10-18 CN CN2007103051452A patent/CN101188267B/zh not_active Expired - Fee Related
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Cited By (9)
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US8587015B2 (en) | 2009-01-22 | 2013-11-19 | Sony Corporation | Light-emitting element |
US8847268B2 (en) | 2010-03-15 | 2014-09-30 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
US9076930B2 (en) | 2010-03-15 | 2015-07-07 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
US9287457B2 (en) | 2010-03-15 | 2016-03-15 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
US9577150B2 (en) | 2010-03-15 | 2017-02-21 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
US9837581B2 (en) | 2010-03-15 | 2017-12-05 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
US10084116B2 (en) | 2010-03-15 | 2018-09-25 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
US10510929B2 (en) | 2010-03-15 | 2019-12-17 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
WO2014021651A1 (ko) * | 2012-08-02 | 2014-02-06 | 엘지이노텍주식회사 | 발광 소자 |
Also Published As
Publication number | Publication date |
---|---|
US20110068363A1 (en) | 2011-03-24 |
EP1914812A2 (en) | 2008-04-23 |
US8217407B2 (en) | 2012-07-10 |
CN101188267A (zh) | 2008-05-28 |
TWI362123B (zh) | 2012-04-11 |
US20080128721A1 (en) | 2008-06-05 |
JP2008103499A (ja) | 2008-05-01 |
KR20080035472A (ko) | 2008-04-23 |
US7858418B2 (en) | 2010-12-28 |
TW200834984A (en) | 2008-08-16 |
CN101188267B (zh) | 2010-06-23 |
EP1914812A3 (en) | 2009-10-14 |
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