JP4147187B2 - 透過性基板上のカラー画像センサの製造方法 - Google Patents

透過性基板上のカラー画像センサの製造方法 Download PDF

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Publication number
JP4147187B2
JP4147187B2 JP2003523013A JP2003523013A JP4147187B2 JP 4147187 B2 JP4147187 B2 JP 4147187B2 JP 2003523013 A JP2003523013 A JP 2003523013A JP 2003523013 A JP2003523013 A JP 2003523013A JP 4147187 B2 JP4147187 B2 JP 4147187B2
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JP
Japan
Prior art keywords
substrate
wafer
layer
color filter
image sensor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003523013A
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English (en)
Japanese (ja)
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JP2005501420A (ja
JP2005501420A5 (ko
Inventor
ルイ ブリソ，
エリック プルキエール，
Original Assignee
イー２ブイ セミコンダクターズ
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Publication of JP2005501420A5 publication Critical patent/JP2005501420A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2003523013A 2001-08-31 2002-08-30 透過性基板上のカラー画像センサの製造方法 Expired - Fee Related JP4147187B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0111335A FR2829290B1 (fr) 2001-08-31 2001-08-31 Capteur d'image couleur sur substrat transparent et procede de fabrication
PCT/FR2002/002977 WO2003019667A1 (fr) 2001-08-31 2002-08-30 Capteur d'image couleur sur substrat transparent et procede de fabrication

Publications (3)

Publication Number Publication Date
JP2005501420A JP2005501420A (ja) 2005-01-13
JP2005501420A5 JP2005501420A5 (ko) 2007-12-06
JP4147187B2 true JP4147187B2 (ja) 2008-09-10

Family

ID=8866878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003523013A Expired - Fee Related JP4147187B2 (ja) 2001-08-31 2002-08-30 透過性基板上のカラー画像センサの製造方法

Country Status (10)

Country Link
US (1) US6933585B2 (ko)
EP (1) EP1421622B1 (ko)
JP (1) JP4147187B2 (ko)
KR (1) KR100919964B1 (ko)
CN (1) CN100487899C (ko)
CA (1) CA2457899C (ko)
DE (1) DE60223263T2 (ko)
FR (1) FR2829290B1 (ko)
IL (2) IL160113A0 (ko)
WO (1) WO2003019667A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2863773B1 (fr) * 2003-12-12 2006-05-19 Atmel Grenoble Sa Procede de fabrication de puces electroniques en silicium aminci
KR100741920B1 (ko) * 2004-12-30 2007-07-24 동부일렉트로닉스 주식회사 씨모스(ｃｍｏｓ) 이미지 센서의 제조 방법
JP4486043B2 (ja) * 2004-12-30 2010-06-23 東部エレクトロニクス株式会社 Ｃｍｏｓイメージセンサー及びその製造方法
US8158510B2 (en) 2009-11-19 2012-04-17 Stats Chippac, Ltd. Semiconductor device and method of forming IPD on molded substrate
US8409970B2 (en) 2005-10-29 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of making integrated passive devices
US8791006B2 (en) * 2005-10-29 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming an inductor on polymer matrix composite substrate
DE102006014247B4 (de) * 2006-03-28 2019-10-24 Robert Bosch Gmbh Bildaufnahmesystem und Verfahren zu dessen Herstellung
US20090174018A1 (en) * 2008-01-09 2009-07-09 Micron Technology, Inc. Construction methods for backside illuminated image sensors
JP5347520B2 (ja) * 2009-01-20 2013-11-20 ソニー株式会社 固体撮像装置の製造方法
US8310021B2 (en) * 2010-07-13 2012-11-13 Honeywell International Inc. Neutron detector with wafer-to-wafer bonding
CN108701589A (zh) * 2016-02-16 2018-10-23 G射线瑞士公司 用于跨越键合界面传输电荷的结构、***和方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758734A (en) * 1984-03-13 1988-07-19 Nec Corporation High resolution image sensor array using amorphous photo-diodes
US4976802A (en) * 1989-10-16 1990-12-11 Xerox Corporation Process for assembling smaller scanning or printing arrays together to form a longer array
JPH05183141A (ja) * 1991-07-12 1993-07-23 Fuji Xerox Co Ltd カラーイメージセンサ
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US6059188A (en) * 1993-10-25 2000-05-09 Symbol Technologies Packaged mirror including mirror travel stops
JPH0945886A (ja) * 1995-08-01 1997-02-14 Sharp Corp 増幅型半導体撮像装置
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Also Published As

Publication number Publication date
WO2003019667A1 (fr) 2003-03-06
CN100487899C (zh) 2009-05-13
FR2829290B1 (fr) 2004-09-17
KR20040047783A (ko) 2004-06-05
US6933585B2 (en) 2005-08-23
EP1421622A1 (fr) 2004-05-26
IL160113A0 (en) 2004-06-20
US20040188792A1 (en) 2004-09-30
DE60223263D1 (de) 2007-12-13
EP1421622B1 (fr) 2007-10-31
DE60223263T2 (de) 2008-08-14
KR100919964B1 (ko) 2009-10-01
IL160113A (en) 2009-07-20
JP2005501420A (ja) 2005-01-13
CA2457899C (fr) 2012-07-03
CN1550041A (zh) 2004-11-24
FR2829290A1 (fr) 2003-03-07
CA2457899A1 (fr) 2003-03-06

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