JP4117020B2 - 半導体装置の製造方法および半導体装置の製造装置 - Google Patents
半導体装置の製造方法および半導体装置の製造装置 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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Description
Claims (9)
- 第1のレーザ光と、該第1のレーザ光とは異なる波長を有する第2のレーザ光とを半導体基板の同じ面に同時に照射し、前記第1のレーザ光と前記第2のレーザ光とのそれぞれの照射時間を制御することにより、前記半導体基板の深さ方向の温度分布を制御し、前記半導体基板中に注入された不純物の活性化を行う工程を具備する半導体装置の製造方法において、
前記第1のレーザ光および前記第2のレーザ光は連続発振レーザ光であり、
前記第1のレーザ光および前記第2のレーザ光の前記半導体基板上の移動速度は同一であり、前記第1のレーザ光および前記第2のレーザ光の移動方向のビームスポットサイズを制御することにより前記照射時間を制御することを特徴とする半導体装置の製造方法。 - 前記半導体基板はシリコンであり、前記第1のレーザ光の波長は370nm以上、前記第2のレーザ光の波長は前記第1のレーザ光の波長より長く900nm以下であることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第1のレーザ光の波長は450nm以上、前記第2のレーザ光の波長は前記第1のレーザ光の波長より長く850nm以下であることを特徴とする請求項2記載の半導体装置の製造方法。
- 前記第1のレーザ光はYAGレーザの高調波のレーザ光であり、前記第2のレーザ光は半導体レーザのレーザ光であることを特徴とする請求項1から3のいずれか一項記載の半導体装置の製造方法。
- 前記半導体基板の表面に動作層を形成する工程を具備し、
前記熱処理を行う工程は、前記基板の裏面より前記第1のレーザ光および前記第2のレーザ光を照射し、前記半導体基板の裏面より注入された不純物を活性化することを特徴とする請求項1から4のいずれか一項記載の半導体装置の製造方法。 - 第1のレーザ光を照射する第1のレーザと、該第1のレーザ光とは異なる波長を有する第2のレーザ光を照射する第2のレーザと、を具備し、前記第1のレーザ光と前記第2のレーザ光とを半導体基板の同じ面に同時に照射し、前記第1のレーザ光と前記第2のレーザ光とのそれぞれの照射時間を制御することにより、前記半導体基板の深さ方向の温度分布を制御し、前記半導体基板に導入された不純物を活性化する半導体装置の製造装置において、
前記第1のレーザ光および前記第2のレーザ光は連続発振レーザ光であり、
前記第1のレーザ光および前記第2のレーザ光の前記半導体基板上の移動速度は同一であり、前記第1のレーザ光および前記第2のレーザ光の移動方向のビームスポットサイズを制御することにより前記照射時間を制御することを特徴とする半導体装置の製造装置。 - 前記半導体基板はシリコンであり、前記第1のレーザ光の波長は370nm以上、前記第2のレーザ光の波長は前記第1のレーザ光の波長より長く900nm以下であることを特徴とする請求項6記載の半導体装置の製造装置。
- 前記第1のレーザ光の波長は450nm以上、前記第2のレーザ光の波長は前記第1のレーザ光の波長より長く850nm以下であることを特徴とする請求項7記載の半導体装置の製造方法。
- 前記第1のレーザ光はYAGレーザの高調波のレーザ光であり、前記第2のレーザ光は半導体レーザのレーザ光であることを特徴とする請求項6から8のいずれか一項記載の半導体装置の製造装置。
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JP2005226036 | 2005-08-03 | ||
JP2005226036 | 2005-08-03 | ||
PCT/JP2006/314594 WO2007015388A1 (ja) | 2005-08-03 | 2006-07-24 | 半導体装置の製造方法および半導体装置の製造装置 |
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US (1) | US7943534B2 (ja) |
JP (1) | JP4117020B2 (ja) |
KR (1) | KR100968687B1 (ja) |
DE (1) | DE112006002027B4 (ja) |
WO (1) | WO2007015388A1 (ja) |
Cited By (2)
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JPH0677155A (ja) | 1992-08-24 | 1994-03-18 | Sony Corp | 半導体基板の熱処理方法 |
JP3195157B2 (ja) * | 1994-03-28 | 2001-08-06 | シャープ株式会社 | 半導体装置の製造方法およびその製造装置 |
US5811325A (en) * | 1996-12-31 | 1998-09-22 | Industrial Technology Research Institute | Method of making a polysilicon carbon source/drain heterojunction thin-film transistor |
JP2000012484A (ja) | 1998-06-25 | 2000-01-14 | Mitsubishi Electric Corp | レーザアニール装置 |
JP4967205B2 (ja) | 2001-08-09 | 2012-07-04 | 富士電機株式会社 | 半導体装置の製造方法 |
JP2004031557A (ja) | 2002-06-25 | 2004-01-29 | Ushio Inc | 光加熱装置 |
JP2004128421A (ja) | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
US20040070046A1 (en) * | 2002-10-15 | 2004-04-15 | Hiroaki Niimi | Reliable dual gate dielectrics for MOS transistors |
US7056810B2 (en) | 2002-12-18 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance |
EP1468774B1 (en) | 2003-02-28 | 2009-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device |
JP4364674B2 (ja) | 2003-02-28 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4860116B2 (ja) | 2003-03-17 | 2012-01-25 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
US7304005B2 (en) | 2003-03-17 | 2007-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device |
JP2004342954A (ja) | 2003-05-19 | 2004-12-02 | Ishikawajima Harima Heavy Ind Co Ltd | レーザアニール方法及び装置 |
JP4727135B2 (ja) | 2003-05-26 | 2011-07-20 | 富士フイルム株式会社 | レーザアニール装置 |
JP2004363355A (ja) * | 2003-06-05 | 2004-12-24 | Hitachi Ltd | 半導体装置及びその製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014036111A (ja) * | 2012-08-08 | 2014-02-24 | Sumitomo Heavy Ind Ltd | 半導体装置の製造方法 |
US9653299B2 (en) | 2012-08-08 | 2017-05-16 | Sumitomo Heavy Industries, Ltd. | Semiconductor device producing method |
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KR100968687B1 (ko) | 2010-07-06 |
DE112006002027T5 (de) | 2008-06-26 |
KR20080015149A (ko) | 2008-02-18 |
DE112006002027B4 (de) | 2018-08-02 |
JPWO2007015388A1 (ja) | 2009-02-19 |
US20090227121A1 (en) | 2009-09-10 |
WO2007015388A1 (ja) | 2007-02-08 |
US7943534B2 (en) | 2011-05-17 |
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