JP4101670B2 - Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 - Google Patents

Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 Download PDF

Info

Publication number
JP4101670B2
JP4101670B2 JP2003024427A JP2003024427A JP4101670B2 JP 4101670 B2 JP4101670 B2 JP 4101670B2 JP 2003024427 A JP2003024427 A JP 2003024427A JP 2003024427 A JP2003024427 A JP 2003024427A JP 4101670 B2 JP4101670 B2 JP 4101670B2
Authority
JP
Japan
Prior art keywords
molecular weight
photoresist composition
positive photoresist
resist pattern
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003024427A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004233846A (ja
Inventor
康秀 大内
一彦 中山
健治 丸山
宏介 土井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2003024427A priority Critical patent/JP4101670B2/ja
Priority to CNB2004100022100A priority patent/CN1229690C/zh
Priority to KR1020040003544A priority patent/KR100570948B1/ko
Priority to TW093101885A priority patent/TWI304918B/zh
Publication of JP2004233846A publication Critical patent/JP2004233846A/ja
Application granted granted Critical
Publication of JP4101670B2 publication Critical patent/JP4101670B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C08L61/14—Modified phenol-aldehyde condensates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
JP2003024427A 2003-01-31 2003-01-31 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 Expired - Fee Related JP4101670B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003024427A JP4101670B2 (ja) 2003-01-31 2003-01-31 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
CNB2004100022100A CN1229690C (zh) 2003-01-31 2004-01-15 Lcd制造用正型光致抗蚀剂组合物以及抗蚀图形的形成方法
KR1020040003544A KR100570948B1 (ko) 2003-01-31 2004-01-17 Ｌｃｄ 제조용 포지티브형 포토레지스트 조성물 및레지스트 패턴의 형성방법
TW093101885A TWI304918B (en) 2003-01-31 2004-01-28 Positive photoresist composition for manufacturing lcd and method for forming resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003024427A JP4101670B2 (ja) 2003-01-31 2003-01-31 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法

Publications (2)

Publication Number Publication Date
JP2004233846A JP2004233846A (ja) 2004-08-19
JP4101670B2 true JP4101670B2 (ja) 2008-06-18

Family

ID=32952962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003024427A Expired - Fee Related JP4101670B2 (ja) 2003-01-31 2003-01-31 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法

Country Status (4)

Country Link
JP (1) JP4101670B2 (ko)
KR (1) KR100570948B1 (ko)
CN (1) CN1229690C (ko)
TW (1) TWI304918B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4935269B2 (ja) * 2005-09-21 2012-05-23 東レ株式会社 ポジ型感光性樹脂組成物
KR101351311B1 (ko) * 2006-03-08 2014-01-14 주식회사 동진쎄미켐 감광성 수지 조성물
JP2009222733A (ja) * 2008-01-25 2009-10-01 Rohm & Haas Electronic Materials Llc ノボラック樹脂ブレンドを含むフォトレジスト
KR101430962B1 (ko) * 2008-03-04 2014-08-18 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
CN101907827B (zh) * 2009-06-08 2011-11-23 奇美实业股份有限公司 正型感光性树脂组成物及其所形成的液晶定向控制用突起
JP6138067B2 (ja) * 2014-02-03 2017-05-31 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ノボラック樹脂ブレンドを含むフォトレジスト
CN107844028B (zh) * 2017-11-07 2021-04-30 潍坊星泰克微电子材料有限公司 一种光刻胶、制备方法及其光刻工艺
JP6691203B1 (ja) * 2018-12-26 2020-04-28 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物、感光性ドライフィルム、感光性ドライフィルムの製造方法、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001051419A (ja) 1999-08-06 2001-02-23 Jsr Corp 感放射線性樹脂組成物
JP2002278060A (ja) 2001-03-16 2002-09-27 Jsr Corp 感放射線性樹脂組成物
JP4213366B2 (ja) 2001-06-12 2009-01-21 Ａｚエレクトロニックマテリアルズ株式会社 厚膜レジストパターンの形成方法

Also Published As

Publication number Publication date
TWI304918B (en) 2009-01-01
TW200424764A (en) 2004-11-16
CN1519648A (zh) 2004-08-11
JP2004233846A (ja) 2004-08-19
KR100570948B1 (ko) 2006-04-13
CN1229690C (zh) 2005-11-30
KR20040069994A (ko) 2004-08-06

Similar Documents

Publication Publication Date Title
JP4101670B2 (ja) Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP2003195496A (ja) 液晶表示素子製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP2005221515A (ja) システムｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP4364596B2 (ja) ポジ型ホトレジスト組成物およびレジストパターンの形成方法
KR100632171B1 (ko) 시스템 ｌｃｄ 제조용 포지티브형 포토레지스트 조성물 및레지스트 패턴 형성방법
JP4071611B2 (ja) Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP3640638B2 (ja) 液晶表示素子製造用レジストパターンの形成方法
KR100572185B1 (ko) Ｌｃｄ 제조용 포지티브형 포토레지스트 조성물 및레지스트 패턴 형성방법
KR100558125B1 (ko) 시스템 ｌｃｄ 제조용 포지티브형 포토레지스트 조성물,그 포지티브형 포토레지스트 조성물의 제조 방법 및레지스트 패턴 형성 방법
KR100606631B1 (ko) 포지티브형 포토레지스트 조성물 및 레지스트 패턴의 형성방법
JP2005010215A (ja) １つの基板上に集積回路と液晶ディスプレイ部分が形成された基板製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
TWI263863B (en) Positive photo resist composition and method of forming resist pattern
KR100685198B1 (ko) 시스템 ｌｃｄ 제조용 포지티브형 포토레지스트 조성물 및레지스트 패턴 형성방법
JP3789926B2 (ja) ポジ型ホトレジスト組成物
KR100585303B1 (ko) 하나의 기판 위에 집적회로와 액정 디스플레이 부분이형성된 기판제조용 포지티브형 포토레지스트 조성물 및레지스트 패턴의 형성방법
KR100596988B1 (ko) 포지티브형 포토레지스트 조성물 및 레지스트 패턴의형성방법
KR100572544B1 (ko) 포지티브형 레지스트 조성물 및 레지스트 패턴의 형성방법
KR100642960B1 (ko) 시스템 ｌｃｄ 제조용 포지티브형 포토레지스트 조성물 및레지스트 패턴 형성방법
JP2004145207A (ja) Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP2005010753A (ja) システムｌｃｄ製造用ポジ型ホトレジスト組成物及びレジストパターン形成方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050601

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20071214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071221

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080311

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080319

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110328

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110328

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120328

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130328

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140328

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees