JP4020041B2 - 固体撮像装置およびその駆動方法ならびに撮像装置 - Google Patents
固体撮像装置およびその駆動方法ならびに撮像装置 Download PDFInfo
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- JP4020041B2 JP4020041B2 JP2003291942A JP2003291942A JP4020041B2 JP 4020041 B2 JP4020041 B2 JP 4020041B2 JP 2003291942 A JP2003291942 A JP 2003291942A JP 2003291942 A JP2003291942 A JP 2003291942A JP 4020041 B2 JP4020041 B2 JP 4020041B2
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- 238000003384 imaging method Methods 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 17
- 238000010586 diagram Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
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- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (5)
- 水平方向および垂直方向に沿って各々複数の画素センサが配置され、前記垂直方向に沿った画素列では、その画素列を構成する複数の画素センサの1つおきに同じ色のフィルタを備えるセンサ領域と、
前記センサ領域における垂直方向に沿った複数の画素センサで構成される画素列の各々に対応して各画素列の両脇に形成される2本の垂直転送部と、
前記各画素列における垂直方向で隣接する各画素センサで蓄積した電荷を前記2本の垂直転送部の各々異なる方へ同じタイミングで読み出すとともに、各垂直転送部で複数画素センサ分の電荷を加算して転送する制御を行う制御手段と
を備える固体撮像装置。 - 前記センサ領域を構成する全ての画素センサで蓄積した画素を同じタイミングで対応する垂直転送部へ読み出す
ことを特徴とする請求項1記載の固体撮像装置。 - 水平方向および垂直方向に沿って各々複数の画素センサが配置され、前記垂直方向に沿った画素列では、その画素列を構成する複数の画素センサの1つおきに同じ色のフィルタを備えるセンサ領域と、
前記センサ領域における垂直方向に沿った複数の画素センサで構成される画素列の各々に対応して各画素列の両脇に形成される2本の垂直転送部と、
前記センサ領域における各画素センサで蓄積した電荷を所定のタイミングで前記2本の垂直転送部へ読み出す制御を行う制御手段とを備える固体撮像装置の駆動方法において、
前記制御手段は、前記各画素列における垂直方向で隣接する各画素センサで蓄積した電荷を前記2本の垂直転送部の各々異なる方へ同じタイミングで読み出すとともに、各垂直転送部で複数画素センサ分の電荷を加算して転送する制御を行う
ことを特徴とする固体撮像装置の駆動方法。 - 前記制御手段は、前記センサ領域を構成する全ての画素センサで蓄積した画素を同じタイミングで対応する垂直転送部へ読み出す制御を行う
ことを特徴とする請求項3記載の固体撮像装置の駆動方法。 - 水平方向および垂直方向に沿って各々複数の画素センサが配置され、前記垂直方向に沿った画素列では、その画素列を構成する複数の画素センサの1つおきに同じ色のフィルタを備えるセンサ領域と、
前記センサ領域における垂直方向に沿った複数の画素センサで構成される画素列の各々に対応して各画素列の両脇に形成される2本の垂直転送部と、
前記各画素列における垂直方向で隣接する各画素センサで蓄積した電荷を前記2本の垂直転送部の各々異なる方へ同じタイミングで読み出すとともに、各垂直転送部で複数画素センサ分の電荷を加算して転送する制御を行う制御手段とを備える固体撮像装置を用いて画像の取り込みを行う
ことを特徴とする撮像装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003291942A JP4020041B2 (ja) | 2003-08-12 | 2003-08-12 | 固体撮像装置およびその駆動方法ならびに撮像装置 |
US10/911,547 US20050035927A1 (en) | 2003-08-12 | 2004-08-05 | Solid state imaging device, driving method therefor, and imaging apparatus |
KR1020040062161A KR20050019026A (ko) | 2003-08-12 | 2004-08-06 | 고체 촬상 장치 및 그 구동 방법 및 촬상 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003291942A JP4020041B2 (ja) | 2003-08-12 | 2003-08-12 | 固体撮像装置およびその駆動方法ならびに撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005064828A JP2005064828A (ja) | 2005-03-10 |
JP4020041B2 true JP4020041B2 (ja) | 2007-12-12 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003291942A Expired - Fee Related JP4020041B2 (ja) | 2003-08-12 | 2003-08-12 | 固体撮像装置およびその駆動方法ならびに撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050035927A1 (ja) |
JP (1) | JP4020041B2 (ja) |
KR (1) | KR20050019026A (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8786510B2 (en) * | 2006-01-24 | 2014-07-22 | Avery Dennison Corporation | Radio frequency (RF) antenna containing element and methods of making the same |
JP2008131331A (ja) * | 2006-11-21 | 2008-06-05 | Fujifilm Corp | 固体撮像素子の駆動方法及び撮像装置 |
US7602430B1 (en) * | 2007-04-18 | 2009-10-13 | Foveon, Inc. | High-gain multicolor pixel sensor with reset noise cancellation |
JP4747154B2 (ja) * | 2007-11-22 | 2011-08-17 | 富士フイルム株式会社 | 固体撮像素子の駆動方法、固体撮像素子、及び撮像装置 |
JP2010010896A (ja) * | 2008-06-25 | 2010-01-14 | Panasonic Corp | 固体撮像装置 |
JP5304185B2 (ja) | 2008-11-10 | 2013-10-02 | 富士通株式会社 | プリント配線板および電子装置 |
JP5290923B2 (ja) * | 2009-10-06 | 2013-09-18 | キヤノン株式会社 | 固体撮像装置および撮像装置 |
EP2711173B1 (en) | 2010-06-14 | 2022-07-13 | Avery Dennison Retail Information Services LLC | Method of manufacturing conductive structures |
FI125720B (fi) | 2011-05-19 | 2016-01-29 | Tecnomar Oy | Rullalta rullalle -massavalmistukseen soveltuva sähköisten siltojen valmistusmenetelmä |
US9137432B2 (en) | 2011-09-16 | 2015-09-15 | Samsung Electronics Co., Ltd. | Backside illumination image sensor, operating method thereof, image processing system and method of processing image using the same |
JP6305169B2 (ja) * | 2014-04-07 | 2018-04-04 | キヤノン株式会社 | 固体撮像素子、撮像装置及びその制御方法、プログラム、記憶媒体 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3971065A (en) * | 1975-03-05 | 1976-07-20 | Eastman Kodak Company | Color imaging array |
JPS57190471A (en) * | 1981-05-19 | 1982-11-24 | Fuji Photo Film Co Ltd | Two-dimensional solid state image pickup device |
JPS5856458U (ja) * | 1981-10-09 | 1983-04-16 | 株式会社日立製作所 | カラ−固体撮像装置 |
JPH05130525A (ja) * | 1991-11-07 | 1993-05-25 | Fuji Film Micro Device Kk | 固体撮像装置とその駆動方法 |
JPH1098648A (ja) * | 1996-09-25 | 1998-04-14 | Nec Corp | 固体撮像装置 |
US6690421B1 (en) * | 1996-10-30 | 2004-02-10 | Fuji Photo Film Co., Ltd. | Structure of solid state image pickup device |
JP3819511B2 (ja) * | 1997-02-13 | 2006-09-13 | 富士写真フイルム株式会社 | Ccd撮像デバイスにおけるモニタ方法およびディジタルスチルカメラ |
JP4140077B2 (ja) * | 1998-02-18 | 2008-08-27 | ソニー株式会社 | 固体撮像素子の駆動方法及び固体撮像素子、並びにカメラ |
US6933976B1 (en) * | 1999-09-03 | 2005-08-23 | Fuji Photo Film Co., Ltd. | Solid-state image pickup device |
JP4515617B2 (ja) * | 2000-10-23 | 2010-08-04 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
JP2003319408A (ja) * | 2002-04-26 | 2003-11-07 | Seiko Epson Corp | カラーエリアセンサ及び撮像回路 |
-
2003
- 2003-08-12 JP JP2003291942A patent/JP4020041B2/ja not_active Expired - Fee Related
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2004
- 2004-08-05 US US10/911,547 patent/US20050035927A1/en not_active Abandoned
- 2004-08-06 KR KR1020040062161A patent/KR20050019026A/ko not_active Application Discontinuation
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Publication number | Publication date |
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KR20050019026A (ko) | 2005-02-28 |
JP2005064828A (ja) | 2005-03-10 |
US20050035927A1 (en) | 2005-02-17 |
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