JP3892030B2 - Led光源 - Google Patents
Led光源 Download PDFInfo
- Publication number
- JP3892030B2 JP3892030B2 JP2005516048A JP2005516048A JP3892030B2 JP 3892030 B2 JP3892030 B2 JP 3892030B2 JP 2005516048 A JP2005516048 A JP 2005516048A JP 2005516048 A JP2005516048 A JP 2005516048A JP 3892030 B2 JP3892030 B2 JP 3892030B2
- Authority
- JP
- Japan
- Prior art keywords
- led
- light source
- sealing resin
- resin layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920005989 resin Polymers 0.000 claims abstract description 125
- 239000011347 resin Substances 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000007789 sealing Methods 0.000 claims description 88
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 230000020169 heat generation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 96
- 238000000465 moulding Methods 0.000 description 22
- 230000035939 shock Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 238000005286 illumination Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008602 contraction Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
まず、図7から図10を参照しながら本発明によるLED光源の実施形態を説明する。
10a 基板の主面
12 LED素子
14 反射面
16 反射板
16w 反射板の側面
16h 反射板の上面
18 封止樹脂層
Dw 封止樹脂層のうち、反射板の側面を覆う部分の厚さ
Dh 封止樹脂層のうち、反射板の上面hを覆う部分の厚さ
20 成形型
40 成形型
101 金属ベース
102 コンポジット層
103 LED素子
104 蛍光体樹脂部
105 反射板
106 封止樹脂層
401 LED素子
402 リードフレーム
403 カップ
404 第2樹脂部
405 第1樹脂部
406 ワイヤ
1001 基板
Claims (11)
- 主面を有する基板と、
前記基板の主面に支持された少なくとも1つのLED素子と、
前記LED素子の側面を取り囲む反射面を有する開口部を備え、前記基板の主面に支持された厚さ0.5mm以上2.0mm以下の平板から構成される反射板と、
前記LED素子および前記反射板の上面および側面の全体を覆う封止樹脂層と、
を備え、
前記基板の熱膨張係数n 1 は、0.4×10 -5 /K以上2.5×10 -5 /K以下であり、
前記封止樹脂層の熱膨張係数n 2 は、6.0×10 -5 /K以上8.0×10 -5 /K以下であり、
前記反射板の熱膨張係数n 3 は、2.3×10 -5 /K以上8.6×10 -5 /K以下であり、
前記封止樹脂層のうち、前記反射板の側面を覆う部分の平均厚さをDw、前記反射板の上面における端面近傍を覆う厚さが略一様な部分の厚さをDhとするとき、Dhは100μm以上1500μm以下、Dwは100μm以上1500μm以下、Dh/Dwは1.2以上1.8以下であり、
前記封止樹脂層のうち、前記反射板の側面を覆う部分の厚さは、前記側面上において平均厚さDwの±10%の範囲内にある、LED光源。 - 前記反射板の開口部の内壁面と前記LED素子との間に配置され、前記LED素子を覆う波長変換部を備え、
前記波長変換部は、前記LED素子から放射された光を当該光の波長よりも長い波長の光に変換する請求項1に記載のLED光源。 - 前記波長変換部は、前記LED素子から放射された光を当該光の波長よりも長い波長に変換する蛍光体を含有する樹脂から形成されている請求項2に記載のLED光源。
- 前記封止樹脂層のうち、前記反射板の開口部に位置する部分は、前記反射板の上面を覆う部分よりも突出したレンズ形状を有している請求項1から3のいずれかに記載のLED素子。
- 前記LED素子の動作中における発熱量は、1W/cm2以上である請求項1に記載のLED素子。
- 前記基板の主面に支持される前記LED素子の個数は2以上である請求項1に記載のLED素子。
- Dwは100μm以上900μm以下である請求項1に記載のLED光源。
- 前記反射板に形成された前記開口部の個数は、4以上である請求項1に記載のLED光源。
- 前記封止樹脂層はエポキシ樹脂を主成分として含有する材料から形成されている請求項1に記載のLED光源。
- 前記反射板の上面の輪郭は矩形である請求項1に記載のLED光源。
- 請求項1に記載のLED光源と、
前記LED光源に電力を供給する回路と、
を備えた照明装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004051075 | 2004-02-26 | ||
JP2004051075 | 2004-02-26 | ||
PCT/JP2005/002692 WO2005083805A1 (ja) | 2004-02-26 | 2005-02-21 | Led光源 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP3892030B2 true JP3892030B2 (ja) | 2007-03-14 |
JPWO2005083805A1 JPWO2005083805A1 (ja) | 2010-01-21 |
Family
ID=34908617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005516048A Expired - Fee Related JP3892030B2 (ja) | 2004-02-26 | 2005-02-21 | Led光源 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7227195B2 (ja) |
JP (1) | JP3892030B2 (ja) |
CN (1) | CN100391020C (ja) |
WO (1) | WO2005083805A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3897806B2 (ja) * | 2004-01-07 | 2007-03-28 | 松下電器産業株式会社 | Led照明光源 |
CN1860329A (zh) * | 2004-01-29 | 2006-11-08 | 松下电器产业株式会社 | Led照明光源 |
WO2005104247A1 (ja) | 2004-04-19 | 2005-11-03 | Matsushita Electric Industrial Co., Ltd. | Led照明光源の製造方法およびled照明光源 |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
WO2007122555A1 (en) * | 2006-04-25 | 2007-11-01 | Koninklijke Philips Electronics N.V. | Immersed leds |
US7795632B2 (en) * | 2006-06-26 | 2010-09-14 | Osram Sylvania Inc. | Light emitting diode with direct view optic |
US7763478B2 (en) * | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
DE102006048592A1 (de) * | 2006-10-13 | 2008-04-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Moduls |
US20080278930A1 (en) * | 2007-05-09 | 2008-11-13 | Unity Opto Technology Co., Ltd. | Tool structure with illumination |
US20090032829A1 (en) * | 2007-07-30 | 2009-02-05 | Tong Fatt Chew | LED Light Source with Increased Thermal Conductivity |
AT506530B1 (de) * | 2008-02-22 | 2012-01-15 | Hierzer Andreas | Leuchtelement |
CN101577298A (zh) * | 2008-05-07 | 2009-11-11 | 富准精密工业(深圳)有限公司 | 发光二极管及其封装方法 |
CN102084508B (zh) * | 2008-07-01 | 2016-01-20 | 皇家飞利浦电子股份有限公司 | 用于led的紧密靠近准直器 |
JP2013041952A (ja) * | 2011-08-12 | 2013-02-28 | Sharp Corp | 発光装置 |
US20150138779A1 (en) * | 2012-08-10 | 2015-05-21 | Goldeneye, Inc. | Lightweight low profile solid state panel light source |
US10514136B2 (en) * | 2013-03-25 | 2019-12-24 | Universal Display Corporation | Lighting devices |
CN105393374B (zh) * | 2013-07-19 | 2019-05-28 | 亮锐控股有限公司 | 具有光学元件并且没有衬底载体的pc led |
EP3545561B1 (en) * | 2017-08-25 | 2022-10-26 | Cree Huizhou Solid State Lighting Company Ltd. | Multiple led light source integrated package |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS539255Y2 (ja) * | 1972-02-28 | 1978-03-10 | ||
JPS48102585A (ja) | 1972-04-04 | 1973-12-22 | ||
JPS5773985A (en) * | 1980-10-28 | 1982-05-08 | Toshiba Corp | Semiconductor light emitting device and manufacture thereof |
GB2206444A (en) * | 1987-06-10 | 1989-01-05 | Yue Wen Cheng | Light emitting diode |
US5055892A (en) * | 1989-08-29 | 1991-10-08 | Hewlett-Packard Company | High efficiency lamp or light accepter |
JPH05290818A (ja) | 1992-04-09 | 1993-11-05 | Matsushita Electron Corp | 庫内用電球 |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
JP2998696B2 (ja) | 1997-05-17 | 2000-01-11 | 日亜化学工業株式会社 | 発光ダイオード |
JP3327170B2 (ja) | 1997-05-17 | 2002-09-24 | 日亜化学工業株式会社 | 発光ダイオードの製造方法 |
US5847507A (en) | 1997-07-14 | 1998-12-08 | Hewlett-Packard Company | Fluorescent dye added to epoxy of light emitting diode lens |
US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
CN2310926Y (zh) * | 1997-09-26 | 1999-03-17 | 陈兴 | 发光二极管面光源装置 |
JPH11340378A (ja) * | 1998-05-22 | 1999-12-10 | Sanken Electric Co Ltd | 半導体発光装置の製造方法 |
JP3490894B2 (ja) * | 1998-06-26 | 2004-01-26 | シャープ株式会社 | 発光表示装置およびその製造方法 |
JP3624699B2 (ja) | 1998-07-03 | 2005-03-02 | スタンレー電気株式会社 | 反射型ledランプ |
JP4171107B2 (ja) | 1998-07-09 | 2008-10-22 | スタンレー電気株式会社 | 面状光源 |
JP3349111B2 (ja) * | 1999-03-15 | 2002-11-20 | 株式会社シチズン電子 | 表面実装型発光ダイオード及びその製造方法 |
JP3492945B2 (ja) * | 1999-07-19 | 2004-02-03 | 株式会社シチズン電子 | 発光ダイオード |
JP3393089B2 (ja) * | 1999-06-23 | 2003-04-07 | 株式会社シチズン電子 | 発光ダイオード |
JP2001085748A (ja) * | 1999-09-14 | 2001-03-30 | Matsushita Electric Works Ltd | 発光装置 |
DE10020465A1 (de) | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP2001358370A (ja) | 2000-06-13 | 2001-12-26 | Matsushita Electric Ind Co Ltd | 波長変換ペースト材料と半導体発光装置及びその製造方法 |
US6345903B1 (en) * | 2000-09-01 | 2002-02-12 | Citizen Electronics Co., Ltd. | Surface-mount type emitting diode and method of manufacturing same |
US6611000B2 (en) * | 2001-03-14 | 2003-08-26 | Matsushita Electric Industrial Co., Ltd. | Lighting device |
US6417019B1 (en) | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
JP3955191B2 (ja) * | 2001-06-28 | 2007-08-08 | アルプス電気株式会社 | 反射体および反射型液晶表示装置 |
EP1416219B1 (en) | 2001-08-09 | 2016-06-22 | Everlight Electronics Co., Ltd | Led illuminator and card type led illuminating light source |
JP3928384B2 (ja) | 2001-08-17 | 2007-06-13 | 松下電工株式会社 | Led照明器具 |
JP2002324313A (ja) | 2002-03-25 | 2002-11-08 | Hitachi Ltd | 磁気記録媒体の製造方法 |
JP2003304004A (ja) * | 2002-04-11 | 2003-10-24 | Citizen Electronics Co Ltd | 光伝送チップ及び取付構造 |
TW200414572A (en) | 2002-11-07 | 2004-08-01 | Matsushita Electric Ind Co Ltd | LED lamp |
-
2005
- 2005-02-21 JP JP2005516048A patent/JP3892030B2/ja not_active Expired - Fee Related
- 2005-02-21 CN CNB2005800004552A patent/CN100391020C/zh not_active Expired - Fee Related
- 2005-02-21 WO PCT/JP2005/002692 patent/WO2005083805A1/ja active Application Filing
- 2005-08-23 US US11/209,906 patent/US7227195B2/en active Active
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US7227195B2 (en) | 2007-06-05 |
JPWO2005083805A1 (ja) | 2010-01-21 |
CN1806347A (zh) | 2006-07-19 |
WO2005083805A1 (ja) | 2005-09-09 |
US20050274973A1 (en) | 2005-12-15 |
CN100391020C (zh) | 2008-05-28 |
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